专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08283051B2 Plated product having copper thin film formed thereon by electroless plating 有权
标题翻译：通过化学镀在其上形成有铜薄膜的镀覆产品
公开(公告)号：US08283051B2
公开(公告)日：2012-10-09
申请号：US12737399
申请日：2009-07-13
申请人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori , Yasuhiro Yamakoshi , Shinichiro Senda
发明人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori , Yasuhiro Yamakoshi , Shinichiro Senda
IPC分类号： B32B15/08
CPC分类号： C23C18/54 , C23C18/1637 , C23C18/165 , C25D3/38 , H01L21/288 , H01L21/76843 , H01L21/76873 , H01L21/76874 , Y10T428/12431 , Y10T428/12438 , Y10T428/12493 , Y10T428/12569 , Y10T428/12826 , Y10T428/1284 , Y10T428/12854 , Y10T428/12903
摘要： A plated product made of a substrate having formed thereon an alloy barrier thin film for preventing copper diffusion contains metal B, which has barrier properties in relation to copper and enables displacement plating with the copper ions contained in an electroless copper plating solution, and metal A, which tends to have less ionization than metal B in an electroless copper plating solution at a pH of 10 or higher; the alloy barrier thin film for preventing copper diffusion has a composition wherein metal A constitutes between 15 and 35 at % of the atoms; and a copper thin film is formed on the alloy barrier thin film by electroless plating using an electroless copper plating solution at a pH of 10 or higher.
摘要翻译：由其上形成有用于防止铜扩散的合金阻挡薄膜的基板制成的电镀产品包含金属B，该金属B具有与铜相关的阻挡性能，并且能够与无电镀铜溶液中包含的铜离子进行置换镀覆，并且金属A 在pH为10以上的化学镀铜溶液中倾向于具有比金属B更少的离子化; 用于防止铜扩散的合金阻挡薄膜具有其中金属A构成原子的15至35原子％的组成; 并且通过使用pH为10以上的化学镀铜溶液进行化学镀，在合金阻挡薄膜上形成铜薄膜。

2. 发明申请

US20110129688A1 PLATED PRODUCT HAVING COPPER THIN FILM FORMED THEREON BY ELECTROLESS PLATING 有权
标题翻译：具有通过电镀镀膜形成的铜薄膜的镀层产品
公开(公告)号：US20110129688A1
公开(公告)日：2011-06-02
申请号：US12737399
申请日：2009-07-13
申请人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori , Yasuhiro Yamakoshi , Shinichiro Senda
发明人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori , Yasuhiro Yamakoshi , Shinichiro Senda
IPC分类号： B32B15/20
CPC分类号： C23C18/54 , C23C18/1637 , C23C18/165 , C25D3/38 , H01L21/288 , H01L21/76843 , H01L21/76873 , H01L21/76874 , Y10T428/12431 , Y10T428/12438 , Y10T428/12493 , Y10T428/12569 , Y10T428/12826 , Y10T428/1284 , Y10T428/12854 , Y10T428/12903
摘要： An object of the present invention is to provide a plated object having a thin seed layer of uniform thickness that enables the fabrication of ultrafine wiring thereon in which, when the seed layer is formed by electroless copper plating, the uniformity and adherence thereof are improved over the aforementioned case in which electroless copper plating is performed on an elemental metal such as tungsten, molybdenum, etc., and the aforementioned complexity of forming two layers of a barrier layer and a catalyst metal layer before forming the copper seed layer is eliminated.A plated product comprising a substrate having formed thereon an alloy barrier thin film for preventing copper diffusion comprising metal B, which has barrier properties in relation to copper and enables displacement plating with the copper ions contained in an electroless copper plating solution, and metal A, which tends to have less ionization than metal B in an electroless copper plating solution at pH 10 or higher; the alloy barrier thin film for preventing copper diffusion has a composition wherein metal A constitutes between 15 and 35 at % of the atoms; and a copper thin film is formed on the alloy barrier thin film by electroless plating using an electroless copper plating solution at pH 10 or higher.
摘要翻译：本发明的目的是提供一种具有均匀厚度的薄种子层的电镀物体，其能够在其上制造超细线，其中当通过无电镀铜形成种子层时，其均匀性和粘附性得到改善，在形成铜籽晶层之前，对诸如钨，钼等的元素金属进行化学镀铜的上述情况以及形成两层阻挡层和催化剂金属层的上述复杂性被消除。一种电镀产品，其包括在其上形成有用于防止铜扩散的合金阻挡薄膜的基板，其包含相对于铜具有阻挡性的金属B，并且能够与包含在无电镀铜溶液中的铜离子进行置换镀覆，以及金属A，在pH为10以上的化学镀铜溶液中，其比金属B的离子化倾向更小; 用于防止铜扩散的合金阻挡薄膜具有其中金属A构成原子的15至35原子％的组成; 并且通过使用pH10或更高的化学镀铜溶液进行化学镀来在合金阻挡薄膜上形成铜薄膜。

3. 发明授权

US09051645B2 Barrier film for semiconductor wiring, sintered compact sputtering target and method of producing the sputtering target 有权
标题翻译：用于半导体布线的阻挡膜，烧结微型溅射靶和溅射靶的制造方法
公开(公告)号：US09051645B2
公开(公告)日：2015-06-09
申请号：US13059582
申请日：2010-04-05
申请人： Shinichiro Senda , Yasuhiro Yamakoshi , Junichi Ito
发明人： Shinichiro Senda , Yasuhiro Yamakoshi , Junichi Ito
IPC分类号： C23C14/34 , C22C1/04 , C23C14/16 , H01J37/34 , H01L21/285 , H01L21/768
CPC分类号： C23C14/3414 , C22C1/045 , C23C14/165 , H01J37/3414 , H01J37/3426 , H01L21/2855 , H01L21/76843
摘要： Provided are a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70≦x≦90, 10≦y≦30 unit: atomic percent), and a sintered compact sputtering target for forming a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70≦x≦90, 10≦y≦30, unit: atomic percent), and comprising a target structure configured from a W matrix and Ni particles existing therein and in which W is diffused in the Ni particles. The present invention aims to provide a sputtering target that is particularly effective for use in forming a barrier film in which the target itself has the same composition as the barrier film without depending on the nitriding reaction in the sputtering process, which is capable of effectively preventing the reaction of a semiconductor device, which is free from the generation of particles in the sputtering process, and which yields superior characteristics upon forming the barrier film, as well as a method of producing such a target.
摘要翻译：本发明提供一种用于半导体配线的阻挡膜，其含有余量为W和不可避免的杂质，其组成为WxNiy（70＆lt; NlE; x＆nlE; 90,10＆nlE; y＆nlE; 30单位：原子百分比）形成用于包含Ni的半导体布线的阻挡膜，其余部分为W和不可避免的杂质，并且具有WxNiy（70＆lt; N; E＆gt;; 90,10＆lt; n＆gt;; y＆nlE; 30，单位：原子百分比）的组成，并且包括由 W基体和存在于其中的Ni颗粒，其中W在Ni颗粒中扩散。本发明的目的在于提供一种溅射靶，其特别有效地用于形成阻挡膜，其中靶本身具有与阻挡膜相同的组成，而不依赖于溅射工艺中的氮化反应，其能够有效地防止在溅射工艺中不产生颗粒的半导体器件的反应，并且在形成阻挡膜时产生优异的特性，以及制造这种靶的方法。

4. 发明申请

US20110155570A1 Barrier Film for Semiconductor Wiring, Sintered Compact Sputtering Target and Method of Producing the Sputtering Target 有权
标题翻译：用于半导体接线的阻挡膜，烧结紧凑型溅射靶和制造溅射靶的方法
公开(公告)号：US20110155570A1
公开(公告)日：2011-06-30
申请号：US13059582
申请日：2010-04-05
申请人： Shinichiro Senda , Yasuhiro Yamakoshi , Junichi Ito
发明人： Shinichiro Senda , Yasuhiro Yamakoshi , Junichi Ito
IPC分类号： C23C14/34 , B22F3/12
CPC分类号： C23C14/3414 , C22C1/045 , C23C14/165 , H01J37/3414 , H01J37/3426 , H01L21/2855 , H01L21/76843
摘要： Provided are a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70≦x≦90, 10≦y≦30 unit: atomic percent), and a sintered compact sputtering target for forming a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of WxNiy (70≦x≦90, 10≦y≦30, unit: atomic percent), and comprising a target structure configured from a W matrix and Ni particles existing therein and in which W is diffused in the Ni particles. The present invention aims to provide a sputtering target that is particularly effective for use in forming a barrier film in which the target itself has the same composition as the barrier film without depending on the nitriding reaction in the sputtering process, which is capable of effectively preventing the reaction of a semiconductor device, which is free from the generation of particles in the sputtering process, and which yields superior characteristics upon forming the barrier film, as well as a method of producing such a target.
摘要翻译：本发明提供一种用于半导体配线的阻挡膜，其含有余量为W和不可避免的杂质，其组成为WxNiy（70＆lt; NlE; x＆nlE; 90,10＆nlE; y＆nlE; 30单位：原子百分比）形成用于包含Ni的半导体布线的阻挡膜，其余部分为W和不可避免的杂质，并且具有WxNiy（70＆lt; N; E＆gt;; 90,10＆lt; n＆gt;; y＆nlE; 30，单位：原子百分比）的组成，并且包括由 W基体和存在于其中的Ni颗粒，其中W在Ni颗粒中扩散。本发明的目的在于提供一种溅射靶，其特别有效地用于形成阻挡膜，其中靶本身具有与阻挡膜相同的组成，而不依赖于溅射工艺中的氮化反应，其能够有效地防止在溅射工艺中不产生颗粒的半导体器件的反应，并且在形成阻挡膜时产生优异的特性，以及制造这种靶的方法。

5. 发明授权

US09653270B2 Method for connecting magnetic substance target to backing plate, and magnetic substance target 有权
公开(公告)号：US09653270B2
公开(公告)日：2017-05-16
申请号：US12023588
申请日：2008-01-31
申请人： Yasuhiro Yamakoshi , Kenichi Mogaki
发明人： Yasuhiro Yamakoshi , Kenichi Mogaki
IPC分类号： C23C14/35 , H01J37/34 , H01J37/32 , C23C14/34
CPC分类号： H01J37/3435 , C23C14/3407 , H01J37/3255 , H01J37/32559 , H01J37/3414 , H01J37/3426 , Y10T428/12465
摘要： A method for connecting a magnetic substance target to a backing plate with less variation in plate thickness, characterized in having the steps of connecting the magnetic substance target to an aluminum plate beforehand while maintaining the flatness, connecting the magnetic substance target connected to the aluminum plate to the backing plate while maintaining the flatness, and grinding out the aluminum plate, whereby the flatness of the magnetic substance target can be maintained until the magnetic substance target is connected to the backing plate by a relatively simple operation.

6. 发明授权

US09249497B2 Ni alloy sputtering target, Ni alloy thin film and Ni silicide film 有权
标题翻译： Ni合金溅射靶，Ni合金薄膜和Ni硅化物膜
公开(公告)号：US09249497B2
公开(公告)日：2016-02-02
申请号：US13635775
申请日：2011-03-18
申请人： Yasuhiro Yamakoshi , Kazumasa Ohashi
发明人： Yasuhiro Yamakoshi , Kazumasa Ohashi
IPC分类号： C23C14/16 , C22C19/05 , C22C19/03 , C23C14/34 , C22C5/04
CPC分类号： C23C14/3414 , C22C5/04 , C22C19/03
摘要： Provided is a Ni alloy sputtering target containing Pt in an amount of 5 to 30 at %, and one or more components selected from V, Al, Cr, Ti, Mo, and Si in a total amount of 1 to 5 at %, wherein the remainder is Ni and unavoidable impurities. The present invention is able to increase the low pass-through flux (PTF), which is a drawback of a Ni—Pt alloy having high magnetic permeability, increase the erosion area of the target which tends to be small as a result of the magnetic field lines being locally concentrated on the surface of the target during sputtering, and inhibit the difference between the portion where erosion is selectively advanced and the portion where erosion does not advance as much as the erosion progresses.
摘要翻译：本发明提供含有5〜30原子％的Pt，V，Al，Cr，Ti，Mo，Si中的1种以上的成分的合金量为1〜5原子％的Ni合金溅射靶，其中，余量为Ni和不可避免的杂质。本发明能够增加低通过通量（PTF），这是具有高磁导率的Ni-Pt合金的缺点，由于磁性而使目标的侵蚀面积趋于变小在溅射期间，场线局部集中在靶的表面上，并且抑制了侵蚀选择性提前的部分与侵蚀进行的部分之间的差异不会随侵蚀进行而增加。

7. 发明申请

US20130032477A1 Ni ALLOY SPUTTERING TARGET, Ni ALLOY THIN FILM AND Ni SILICIDE FILM 有权
标题翻译：镍合金溅射靶，镍合金薄膜和镍硅膜
公开(公告)号：US20130032477A1
公开(公告)日：2013-02-07
申请号：US13635775
申请日：2011-03-18
申请人： Yasuhiro Yamakoshi , Kazumasa Ohashi
发明人： Yasuhiro Yamakoshi , Kazumasa Ohashi
IPC分类号： C23C14/16
CPC分类号： C23C14/3414 , C22C5/04 , C22C19/03
摘要： Provided is a Ni alloy sputtering target containing Pt in an amount of 5 to 30 at %, and one or more components selected from V, Al, Cr, Ti, Mo, and Si in a total amount of 1 to 5 at %, wherein the remainder is Ni and unavoidable impurities. The present invention is able to increase the low pass-through flux (PTF), which is a drawback of a Ni—Pt alloy having high magnetic permeability, increase the erosion area of the target which tends to be small as a result of the magnetic field lines being locally concentrated on the surface of the target during sputtering, and inhibit the difference between the portion where erosion is selectively advanced and the portion where erosion does not advance as much as the erosion progresses.
摘要翻译：本发明提供含有5〜30原子％的Pt，V，Al，Cr，Ti，Mo，Si中的1种以上的成分的合金量为1〜5原子％的Ni合金溅射靶，其中，余量为Ni和不可避免的杂质。本发明能够增加低通过通量（PTF），这是具有高导磁率的Ni-Pt合金的缺点，由于磁性而使目标的侵蚀面积趋于变小在溅射期间，场线局部集中在靶的表面上，并且抑制了侵蚀选择性提前的部分与侵蚀进行的部分之间的差异不会随侵蚀进行而增加。

8. 发明授权

US08318314B2 Barrier film for flexible copper substrate and sputtering target for forming barrier film 有权
标题翻译：用于柔性铜基板的阻挡膜和用于形成阻挡膜的溅射靶
公开(公告)号：US08318314B2
公开(公告)日：2012-11-27
申请号：US12640075
申请日：2009-12-17
申请人： Shuichi Irumata , Yasuhiro Yamakoshi
发明人： Shuichi Irumata , Yasuhiro Yamakoshi
IPC分类号： B32B15/08 , B32B27/00 , B32B27/06 , B32B15/01 , B32B15/00 , B32B5/10 , B32B15/20
CPC分类号： H05K3/388 , C22C19/07 , C23C14/205 , C23C14/3414 , H05K1/0346 , H05K1/0393 , Y10T428/12569 , Y10T428/12715 , Y10T428/12847 , Y10T428/1291 , Y10T428/31681 , Y10T428/31721
摘要： A barrier film for a flexible copper substrate comprising a Co—Cr alloy film containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is provided. The barrier film has a thickness of 3 to 150 nm and a film thickness uniformity of 10% or less at 1σ. A sputtering target for forming a barrier film comprising a Co—Cr alloy containing 5 to 30 wt % of Cr and a balance of unavoidable impurities and Co is also provided. The relative magnetic permeability in the in-plane direction of the sputtered face of the target is 100 or less. The barrier film for a flexible copper substrate and the sputtering target for forming such barrier film have a film thickness that is thin enough to prevent film peeling and inhibiting the diffusion of copper to a resin film such as polyimide, is capable of obtaining a sufficient barrier effect even in a minute wiring pitch and has barrier characteristics that will not change even when the temperature rises due to heat treatment or the like.
摘要翻译：提供了一种用于柔性铜基材的阻挡膜，其包含含有5至30重量％的Cr的Co-Cr合金膜和余量的不可避免的杂质和Co。阻挡膜的厚度为3〜150nm，膜厚均匀度为1％以下。还提供了用于形成阻挡膜的溅射靶，该阻挡膜包含含有5〜30重量％的Cr的Co-Cr合金和余量的不可避免的杂质和Co。靶的溅射面的面内方向的相对磁导率为100以下。用于柔性铜基板的阻挡膜和用于形成这种阻挡膜的溅射靶具有足够薄以防止膜剥离并且抑制铜扩散到诸如聚酰亚胺等树脂膜的扩散的膜厚，能够获得足够的屏障即使在微小的布线间距中也起作用，并且具有即使当由于热处理等导致的温度上升时也不会改变的阻挡特性。

9. 发明申请

US20110017590A1 Sintered Compact Target and Method of Producing Sintered Compact 审中-公开
标题翻译：烧结紧凑型靶材及其制造方法
公开(公告)号：US20110017590A1
公开(公告)日：2011-01-27
申请号：US12922485
申请日：2008-12-09
申请人： Hideaki Fukuyo , Masataka Yahagi , Yasuhiro Yamakoshi , Hideyuki Takahashi
发明人： Hideaki Fukuyo , Masataka Yahagi , Yasuhiro Yamakoshi , Hideyuki Takahashi
IPC分类号： C23C14/34 , B22F3/11
CPC分类号： B22F3/1103 , B22F3/14 , B22F3/15 , B22F2998/10 , C22C1/04 , C22C12/00 , C22C28/00 , C22C30/00 , C23C14/0623 , C23C14/3414 , G11B7/2433 , G11B2007/24308 , G11B2007/2431 , G11B2007/24312 , G11B2007/24314 , G11B2007/24316 , G11B2007/24322
摘要： Disclosed is a sintered compact target containing an element (A) and an element (B) below, wherein the sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μm2 of the target surface is 100 micropores or less:(A): one or more chalcogenide elements selected from S, Se, and Te; and (B): one or more Vb group elements selected from Bi, Sb, As, P, and N.The provided technology is able to eliminate the source of grain dropping or generation of nodules in the target during sputtering, and additionally inhibit the generation of particles.
摘要翻译：公开了含有下述元素（A）和元素（B）的烧结体靶，其中，烧结体靶没有平均直径为1μm以上的孔，平均直径少的微孔数目标表面40000μm2中存在的1μm以下为1μm以下：（A）：选自S，Se，Te中的一种以上的硫族化物元素; 和（B）：选自Bi，Sb，As，P和N中的一种或多种Vb族元素。所提供的技术能够在溅射期间消除靶中的颗粒滴下或产生结节的来源，并且另外抑制生成颗粒。

10. 发明授权

US07618505B2 Target of high-purity nickel or nickel alloy and its producing method 有权
标题翻译：高纯镍或镍合金靶材及其制备方法
公开(公告)号：US07618505B2
公开(公告)日：2009-11-17
申请号：US11332045
申请日：2006-01-13
申请人： Yasuhiro Yamakoshi , Hirohito Miyashita
发明人： Yasuhiro Yamakoshi , Hirohito Miyashita
IPC分类号： C22F1/10
CPC分类号： C22C19/03 , C22F1/10 , C23C14/3414 , G11B5/851 , H01F41/183
摘要： Provided is high purity nickel or nickel alloy target for Magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputtering capable of achieving a favorable film uniformity (evenness of film thickness) and superior plasma ignition (firing) even during the manufacturing process employing a 300 mm wafer. The present invention also provides the manufacturing method of such high purity nickel or nickel alloy target.
摘要翻译：提供了具有优异的溅射膜均匀性并且靶的导磁率为100以上的用于磁控管溅射的高纯度镍或镍合金靶，并且该高纯度镍或用于获得有利膜的磁控溅射的镍合金靶即使在使用300mm晶片的制造过程中，均匀性（膜厚均匀性）和优异的等离子体点火（烧制）。本发明还提供了这种高纯镍或镍合金靶的制造方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式