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1. 发明授权

US09034154B2 Sputtering target and process for producing same 有权
标题翻译：溅射目标和生产方法
公开(公告)号：US09034154B2
公开(公告)日：2015-05-19
申请号：US13119867
申请日：2010-02-24
申请人： Yuichiro Nakamura , Akira Hisano , Junnosuke Sekiguchi
发明人： Yuichiro Nakamura , Akira Hisano , Junnosuke Sekiguchi
IPC分类号： C23C14/34
CPC分类号： C23C14/3414
摘要： A sputtering target with low generation of particles in which oxides, carbides, nitrides, borides, intermetallic compounds, carbonitrides, and other substances without ductility exist in a matrix phase made of a highly ductile substance at a volume ratio of 1 to 50%, wherein a highly ductile and conductive metal coating layer is formed on an outermost surface of the target. Provided are a sputtering target capable of improving the target surface in which numerous substances without ductility exist and preventing or inhibiting the generation of nodules and particles during sputtering, and a method of producing such a sputtering target.
摘要翻译：在体积比为1〜50％的高延展性物质的基体相中，存在低产生粒子的溅射靶，其中氧化物，碳化物，氮化物，硼化物，金属间化合物，碳氮化物和其他物质不具有延性，其中在目标的最外表面上形成高度延展且导电的金属涂层。提供能够改善目前表面的溅射靶，其中存在许多无延展性的物质，并且防止或抑制溅射过程中的结核和颗粒的产生，以及制造溅射靶的方法。

2. 发明授权

US08736057B2 Substrate and manufacturing method therefor 有权
标题翻译：基板及其制造方法
公开(公告)号：US08736057B2
公开(公告)日：2014-05-27
申请号：US12734560
申请日：2008-11-26
申请人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
发明人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/288 , C23C14/0036 , C23C14/165 , C23C18/1601 , C23C18/1637 , C23C18/165 , C23C18/1653 , C23C18/40 , C23C18/54 , H01L21/2855 , H01L21/76843 , H01L21/76874 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
摘要翻译：在基材上具有防止含有选自钨，钼，铌中的一种以上的金属元素的铜扩散用阻挡膜的基板，具有铂，金，银，钯等无电镀的催化功能的金属元素，以及选自钨，钼和铌的上述一种或多种金属元素的氮化物形式的氮。通过使用含有选自钨，钼和铌中的一种或多种金属元素的靶和在化学镀中具有催化功能的上述金属元素在氮气气氛中溅射来制造防止铜扩散的阻挡膜。

3. 发明申请

US20130139648A1 Recovery Method for High Purity Platinum 审中-公开
标题翻译：高纯铂的回收方法
公开(公告)号：US20130139648A1
公开(公告)日：2013-06-06
申请号：US13813354
申请日：2011-06-21
申请人： Junnosuke Sekiguchi
发明人： Junnosuke Sekiguchi
IPC分类号： C22B3/00
CPC分类号： C22B11/042 , C22B5/02 , C22B11/025 , Y02P10/214 , Y02P10/234
摘要： A high purity platinum recovery method including the steps of dissolving a platinum alloy containing ruthenium in aqua regia and eliminating residue, thereafter causing acid with platinum dissolved therein and an ammonium chloride solution to react so as to deposit chloroplatinic ammonium salt, and reducing the chloroplatinic ammonium salt to obtain a platinum sponge. The method is characterized in that acid with platinum dissolved therein and the ammonium chloride solution are caused to react at a temperature of 40° C. or higher. Provided is a method which enables recovery, at a high yield, of high purity platinum which can be reused in a platinum and a platinum-containing target as a result of efficiently eliminating ruthenium, cobalt, chromium, copper, iron, nickel, silicon and the like which become included in a spent platinum alloy sputtering target, particularly a magnetic material target, and in scraps such as mill ends, sawdust, and surface grinding scraps generated during the production process of such a target.
摘要翻译：一种高纯度铂回收方法，包括以下步骤：将含有钌的铂合金溶解在王水中并除去残留物，然后将铂溶解于其中的酸和氯化铵溶液反应以沉积氯铂铵盐，并还原氯铂铵盐以获得铂金海绵。该方法的特征在于使铂溶解的酸和氯化铵溶液在40℃以上的温度下反应。本发明提供能够高效率地除去钌，钴，铬，铜，铁，镍，硅等的能够以高收率回收可以重新用于铂和含铂靶的高纯度铂的方法。其被包括在废铂合金溅射靶，特别是磁性材料靶中，以及在这种靶的生产过程中产生的诸如磨头，锯屑和表面研磨废料的废料中。

4. 发明授权

US08390123B2 ULSI micro-interconnect member having ruthenium electroplating layer on barrier layer 有权
标题翻译： ULSI微互连构件在阻挡层上具有钌电镀层
公开(公告)号：US08390123B2
公开(公告)日：2013-03-05
申请号：US12735187
申请日：2009-01-08
申请人： Junnosuke Sekiguchi , Toru Imori , Takashi Kinase
发明人： Junnosuke Sekiguchi , Toru Imori , Takashi Kinase
IPC分类号： H01L23/48
CPC分类号： H01L23/53238 , C23C28/021 , C23C28/023 , C25D3/38 , C25D3/50 , C25D5/10 , H01L21/2885 , H01L21/76846 , H01L21/76873 , H01L2924/0002 , H01L2924/00
摘要： A ULSI micro-interconnect member having a substrate and a ULSI micro-interconnect formed on the substrate, wherein the ULSI micro-interconnect includes a barrier layer formed on the substrate and a ruthenium electroplating layer formed on the barrier layer; the ULSI micro-interconnect member further including a copper electroplating layer formed using the ruthenium electroplating layer as a seed layer; and a process for fabricating the ULSI micro-interconnect members.
摘要翻译： ULSI微互连构件，其具有形成在基板上的基板和ULSI微互连，其中ULSI微互连包括形成在基板上的阻挡层和形成在阻挡层上的钌电镀层; 所述ULSI微互连构件还包括使用所述钌电镀层作为种子层形成的铜电镀层; 以及制造ULSI微互连部件的工艺。

5. 发明授权

US08247301B2 Substrate and manufacturing method therefor 有权
标题翻译：基板及其制造方法
公开(公告)号：US08247301B2
公开(公告)日：2012-08-21
申请号：US12734590
申请日：2008-11-26
申请人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
发明人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/2855 , C23C18/1637 , C23C18/165 , C23C18/1653 , C23C18/40 , H01L21/288 , H01L21/76843 , H01L21/76874 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium, and iridium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
摘要翻译：在基材上具有防止含有选自钨，钼和铌中的一种或多种金属元素的铜扩散用阻挡膜的基板，在无电解电镀如钌，铑和铱中具有催化功能的金属元素，以及氮以上述一种或多种选自钨，钼和铌的金属元素的氮化物的形式存在。通过使用含有选自钨，钼和铌中的一种或多种金属元素的靶和在化学镀中具有催化功能的上述金属元素在氮气气氛中溅射来制造防止铜扩散的阻挡膜。

6. 发明申请

US20100244258A1 SUBSTRATE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：基板及其制造方法
公开(公告)号：US20100244258A1
公开(公告)日：2010-09-30
申请号：US12734560
申请日：2008-11-26
申请人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
发明人： Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
IPC分类号： H01L23/48 , H05K1/09 , C23C14/34
CPC分类号： H01L21/288 , C23C14/0036 , C23C14/165 , C23C18/1601 , C23C18/1637 , C23C18/165 , C23C18/1653 , C23C18/40 , C23C18/54 , H01L21/2855 , H01L21/76843 , H01L21/76874 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a substrate having a barrier film for preventing copper diffusion having both a barrier function and a catalytic function, wherein the barrier properties during high-temperature heating is excellent.A substrate having, on a base material, a barrier film for preventing copper diffusion comprising one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The said barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
摘要翻译：本发明的一个目的是提供一种具有防止具有阻隔功能和催化功能的铜扩散的阻挡膜的基板，其中高温加热时的阻挡性能优异。在基材上具有用于防止铜扩散的阻挡膜的基板，其包含选自钨，钼和铌的一种或多种金属元素，在无电镀如铂，金，银和钯中具有催化功能的金属元素，以及选自钨，钼和铌的上述一种或多种金属元素的氮化物形式的氮。所述用于防止铜扩散的阻挡膜通过使用包含一种或多种选自钨，钼和铌的金属元素的靶和在化学镀中具有催化功能的上述金属元素在氮气气氛中溅射来制造。

7. 发明授权

US07138040B2 Electrolytic copper plating method, phosphorous copper anode for electrolytic plating method, and semiconductor wafer having low particle adhesion plated with said method and anode 有权
标题翻译：电解铜电镀法，电解电镀法用的磷铜阳极，以及利用所述方法和阳极电镀的具有低颗粒粘附性的半导体晶片
公开(公告)号：US07138040B2
公开(公告)日：2006-11-21
申请号：US10362152
申请日：2002-07-11
申请人： Takeo Okabe , Akihiro Aiba , Junnosuke Sekiguchi , Hirohito Miyashita , Ichiroh Sawamura
发明人： Takeo Okabe , Akihiro Aiba , Junnosuke Sekiguchi , Hirohito Miyashita , Ichiroh Sawamura
IPC分类号： C25B11/04 , C25D3/38
CPC分类号： C25D7/12 , C25D17/10
摘要： An electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of the phosphorous copper anode 10 to 1500 μm when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of the phosphorous copper anode 5 to 1500 μm when the anode current density during electrolysis is less than 3 A/dm2. The electrolytic copper plating method and phosphorous copper anode used in such electrolytic copper plating method is capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and is capable of preventing the adhesion of particles to a semiconductor wafer. A semiconductor wafer plated with the foregoing method and anode having low particle adhesion are provided.
摘要翻译：一种电解铜电镀方法，其特征在于在进行电解铜电镀时使用磷铜作为阳极，并且当电解时的阳极电流密度为3A / cm 3时，使磷铜阳极的晶粒尺寸为10〜1500μm，进行电解镀铜， dm 2以上，并且当电解中的阳极电流密度小于3A / dm 2时，使磷铜阳极的晶粒尺寸为5〜1500μm。在这种电解镀铜方法中使用的电解铜电镀方法和磷铜阳极能够抑制电镀槽内阳极侧产生的污泥等颗粒的产生，能够防止颗粒附着在半导体晶片上。提供了镀上述方法的半导体晶片和具有低颗粒附着力的阳极。

8. 发明申请

US20060233963A1 Method for electroless plating and metal-plated article 有权
标题翻译：化学镀方法和镀金制品
公开(公告)号：US20060233963A1
公开(公告)日：2006-10-19
申请号：US10558172
申请日：2004-03-31
申请人： Toru Imori , Junnosuke Sekiguchi , Atsushi Yabe , Yoshihisa Fujihira
发明人： Toru Imori , Junnosuke Sekiguchi , Atsushi Yabe , Yoshihisa Fujihira
IPC分类号： B05D3/00 , B05D1/18
CPC分类号： C23C18/18 , C23C18/1865 , C23C18/1879 , C23C18/1882 , C23C18/1893 , C23C18/2033 , C23C18/2066 , C23C18/2086 , C23C18/30
摘要： It is an object to provide a method for metal plating with good adhesion to materials that are difficult to plate. The present invention is a metal plating method wherein a material to be plated is surface treated with a silane coupling agent having in a molecule thereof a functional group with a metal-capturing capability, is heat treated at a high temperature of at least 150° C., a surface treatment is performed with a solution containing a noble metal compound, and electroless plating is performed. Alternatively, the present invention is a metal plating method wherein a material to be plated is surface treated with a liquid in which a noble metal compound and a silane coupling agent having in a molecule thereof a functional group with a metal-capturing capability have already been mixed or reacted, is heat treated at a high temperature of at least 150° C., and electroless plating is performed.
摘要翻译：本发明的目的是提供一种金属镀层的方法，该方法对难以镀覆的材料具有良好的粘合性。本发明是一种金属镀覆方法，其中用具有金属捕集能力的分子中的具有金属捕获能力的官能团的硅烷偶联剂对待镀覆的材料进行表面处理，在至少150℃的高温下进行热处理用含有贵金属化合物的溶液进行表面处理，进行无电镀。或者，本发明是一种金属镀覆方法，其中将待镀材料用贵金属化合物和其分子中具有金属捕集能力的官能团的硅烷偶联剂的液体进行表面处理混合或反应，在至少150℃的高温下进行热处理，进行无电镀。

9. 发明授权

US08734579B2 Aqueous solution containing divalent iron ions 有权
标题翻译：含有二价铁离子的水溶液
公开(公告)号：US08734579B2
公开(公告)日：2014-05-27
申请号：US13382195
申请日：2010-10-25
申请人： Masaomi Murakami , Junnosuke Sekiguchi
发明人： Masaomi Murakami , Junnosuke Sekiguchi
IPC分类号： C23C18/50 , C23C18/52
CPC分类号： C25D3/562 , C23C18/50 , C25D3/20 , C25D21/18
摘要： An aqueous solution containing divalent iron ions having improved storage stability such that the oxidation over time of divalent iron ions in the aqueous solution containing divalent iron ions to trivalent iron ions is suppressed and the occurrence of the precipitation of iron (III) hydroxide is prevented for long periods. The aqueous solution contains divalent iron ions having improved storage stability characterized in that it contains divalent iron ions and a hydroxylamine salt as a reducing agent and has a pH of 3.0 or lower. The pH is preferably 2.2 or lower and more preferably 1.2 or lower.
摘要翻译：含有二价铁离子的水溶液具有改进的储存稳定性，从而抑制含有二价铁离子至三价铁离子的水溶液中的二价铁离子随时间的氧化，并且防止了氢氧化铁（III）的沉淀的发生。长时间该水溶液含有具有改进的储存稳定性的二价铁离子，其特征在于其包含二价铁离子和羟胺盐作为还原剂，并具有3.0或更低的pH。 pH优选为2.2以下，更优选为1.2以下。

10. 发明授权

US08395264B2 Substrate comprising alloy film of metal element having barrier function and metal element having catalytic power 有权
标题翻译：基片包括具有阻隔功能的金属元素的合金膜和具有催化力的金属元素
公开(公告)号：US08395264B2
公开(公告)日：2013-03-12
申请号：US12998802
申请日：2010-01-28
申请人： Junichi Ito , Junnosuke Sekiguchi , Toru Imori
发明人： Junichi Ito , Junnosuke Sekiguchi , Toru Imori
IPC分类号： H01L23/48
CPC分类号： H01L21/28556 , C23C16/06 , C23C18/165 , C23C18/1872 , C23C18/30 , C23C18/40 , C23C18/54 , H01L21/288 , H01L21/76841 , H01L21/76873 , H01L21/76874 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A layer having a barrier function and catalytic power and excelling in formation uniformity and coverage of an ultrathin film, a pretreatment technique making it possible to form an ultrafine wiring and form a thin seed layer of uniform film thickness and a substrate including a thin seed layer formed with a uniform film thickness by electroless plating by using the aforementioned technique. A substrate in which an alloy film of one or more metal elements, having a barrier function and a metal element or metal elements, having catalytic power with respect to electroless plating is formed by chemical vapor deposition (CVD) on a base to a film thickness of 0.5 nm to 5 nm with a content ratio of the one or more metal element having a barrier function from 5 to 90 at. %.
摘要翻译：具有阻隔功能和催化力的层，超薄膜的形成均匀性和覆盖性优异的预处理技术，使得可以形成超细布线并形成均匀膜厚度的薄种子层和包含薄种子层的基板通过使用上述技术通过无电镀形成均匀的膜厚度。通过化学气相沉积（CVD）在基底上形成具有屏障功能的一种或多种金属元素的合金膜和具有相对于化学镀的催化能的金属元素或金属元素的基底，为0.5nm至5nm，其中一种或多种金属元素的阻挡功能的含量比为5至90at。％。

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