专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06172858B2 Thin film head 有权
标题翻译：薄膜头
公开(公告)号：US06172858B2
公开(公告)日：2001-01-09
申请号：US09479651
申请日：2000-01-07
申请人： Hiroaki Yoda , Yuichi Ohsawa , Kohichi Tateyama , Reiko Kondoh , Toshihiko Ohta , Junichi Akiyama , Hitoshi Iwasaki
发明人： Hiroaki Yoda , Yuichi Ohsawa , Kohichi Tateyama , Reiko Kondoh , Toshihiko Ohta , Junichi Akiyama , Hitoshi Iwasaki
IPC分类号： G11B5127
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/3163 , G11B5/3903 , G11B5/3912 , G11B5/3919 , G11B5/3932 , G11B5/3967 , G11B5/399 , G11B2005/0016 , G11B2005/0018 , G11B2005/3996 , Y10T29/49025
摘要： The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magnetic films, which essentially responds to a signal magnetic field, is not more than a distance between leads. The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films and a nonmagnetic film sandwiched between the magnetic films, which makes use of a change in magnetic resistance caused by spin-dependent scattering, wherein at least a portion of one magnetic films, which essentially respond to a signal magnetic field extends in a direction same as that of the signal magnetic field.
摘要翻译：本发明提供了一种具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜，夹在磁性膜之间的非磁性膜和连接到磁阻效应元件的引线，其中一个磁性膜的宽度基本上响应信号磁场，不超过引线之间的距离。本发明提供了具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜和夹在磁性膜之间的非磁性膜，其利用由自旋依赖性散射引起的磁阻的变化，其中至少一个基本上响应于信号磁场的一个磁性膜的部分在与信号磁场的方向相同的方向上延伸。

2. 发明授权

US5461527A Magneto-resistive head 失效
标题翻译：磁阻头
公开(公告)号：US5461527A
公开(公告)日：1995-10-24
申请号：US340448
申请日：1994-11-14
申请人： Junichi Akiyama , Yuichi Ohsawa , Hitoshi Iwasaki , Reiko Kondoh , Kohichi Tateyama , Toshihiko Ohta , Hiroaki Yoda
发明人： Junichi Akiyama , Yuichi Ohsawa , Hitoshi Iwasaki , Reiko Kondoh , Kohichi Tateyama , Toshihiko Ohta , Hiroaki Yoda
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , G11B5/399
摘要： A member having a first and a second magnetic layer are magnetostatically coupled and laminated and the first magnetic layer formed on a magneto-resistive element, for creating the exchange coupling on the magneto-resistive element and the first magnetic layer. The member is formed by sequentially laminating a first ferromagnetic layer magnetized in a sense along the direction of the longitudinal bias of the magneto-resistive element, non-magnetic layer and second ferromagnetic layer magnetized in a direction opposite to the magnetized direction of the first ferromagnetic layer, for example.
摘要翻译：具有第一和第二磁性层的构件被静磁耦合和层叠，并且第一磁性层形成在磁阻元件上，用于在磁阻元件和第一磁性层上产生交换耦合。该构件通过沿着磁阻元件的方向磁化的第一铁磁层顺序地层叠，非磁性层和第二铁磁层沿与第一铁磁体的磁化方向相反的方向被磁化的方向层，例如。

3. 发明授权

US6046891A Thin film head 失效
标题翻译：薄膜头
公开(公告)号：US6046891A
公开(公告)日：2000-04-04
申请号：US22120
申请日：1998-02-11
申请人： Hiroaki Yoda , Yuichi Ohsawa , Kohichi Tateyama , Reiko Kondoh , Toshihiko Ohta , Junichi Akiyama , Hitoshi Iwasaki
发明人： Hiroaki Yoda , Yuichi Ohsawa , Kohichi Tateyama , Reiko Kondoh , Toshihiko Ohta , Junichi Akiyama , Hitoshi Iwasaki
IPC分类号： G11B5/00 , G11B5/127 , G11B5/31 , G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/3903 , G11B5/3912 , G11B5/3919 , G11B5/399 , G11B2005/0016 , G11B2005/0018 , G11B2005/3996 , G11B5/3163 , G11B5/3932 , G11B5/3967 , Y10T29/49025
摘要： The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magnetic films, which essentially responds to a signal magnetic field, is not more than a distance between leads. The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films and a nonmagnetic film sandwiched between the magnetic films, which makes use of a change in magnetic resistance caused by spin-dependent scattering, wherein at least a portion of one magnetic films, which essentially respond to a signal magnetic field, extends in a direction same as that of the signal magnetic field.
摘要翻译：本发明提供了一种具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜，夹在磁性膜之间的非磁性膜和连接到磁阻效应元件的引线，其中一个磁性膜的宽度基本上响应信号磁场，不超过引线之间的距离。本发明提供了具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜和夹在磁性膜之间的非磁性膜，其利用由自旋依赖性散射引起的磁阻的变化，其中至少一个基本上响应于信号磁场的一个磁性膜的部分在与信号磁场相同的方向上延伸。

4. 发明授权

US5905611A Thin film magnetic head responsive to spin-dependent scattering 失效
标题翻译：薄膜磁头响应于自旋依赖散射
公开(公告)号：US5905611A
公开(公告)日：1999-05-18
申请号：US848733
申请日：1997-05-22
申请人： Hiroaki Yoda , Yuichi Ohsawa , Kohichi Tateyama , Reiko Kondoh , Toshihiko Ohta , Junichi Akiyama , Hitoshi Iwasaki
发明人： Hiroaki Yoda , Yuichi Ohsawa , Kohichi Tateyama , Reiko Kondoh , Toshihiko Ohta , Junichi Akiyama , Hitoshi Iwasaki
IPC分类号： G11B5/00 , G11B5/127 , G11B5/31 , G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/1278 , G11B5/3903 , G11B5/3912 , G11B5/3919 , G11B5/399 , G11B2005/0016 , G11B2005/0018 , G11B2005/3996 , G11B5/3163 , G11B5/3932 , G11B5/3967 , Y10T29/49025
摘要： The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magnetic films, which essentially responds to a signal magnetic field, is not more than a distance between leads. The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films and a nonmagnetic film sandwiched between the magnetic films, which makes use of a change in magnetic resistance caused by spin-dependent scattering, wherein at least a portion of one magnetic films, which essentially respond to a signal magnetic field extends in a direction same as that of the signal magnetic field.
摘要翻译：本发明提供了一种具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜，夹在磁性膜之间的非磁性膜和连接到磁阻效应元件的引线，其中一个磁性膜的宽度基本上响应信号磁场，不超过引线之间的距离。本发明提供了具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜和夹在磁性膜之间的非磁性膜，其利用由自旋依赖性散射引起的磁阻的变化，其中至少一个基本上响应于信号磁场的一个磁性膜的部分在与信号磁场的方向相同的方向上延伸。

5. 发明授权

US5329413A Magnetoresistance sensor magnetically coupled with high-coercive force film at two end regions 失效
标题翻译：磁阻传感器与两个端部区域的高矫顽力膜磁耦合
公开(公告)号：US5329413A
公开(公告)日：1994-07-12
申请号：US712
申请日：1993-01-05
申请人： Reiko Kondoh , Hitoshi Iwasaki , Junichi Akiyama , Yuichi Ohsawa , Toshihiko Ohta
发明人： Reiko Kondoh , Hitoshi Iwasaki , Junichi Akiyama , Yuichi Ohsawa , Toshihiko Ohta
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/398 , G11B5/399 , G11B2005/3996
摘要： A magnetoresistance sensor of this invention is designed to detect a magnetic field on the basis of a change in electric resistance of a magnetoresistance layer, and includes a substrate, the magnetoresistance layer, a magnetization stabilizing layer for stabilizing magnetization of the magnetoresistance layer, and an electrical conductive layer formed on the magnetoresistance layer or the magnetization stabilizing layer. The sensor is characterized in that the magnetoresistance layer and the magnetization stabilizing layer are stacked on each other such that the layers are magnetically coupled to each other at their two end regions with an exchange coupling force higher than that at the remaining region. With this arrangement, there is provided a magnetoresistance sensor having high sensitivity, which can apply a desired bias magnetic field to the MR layer while preventing the bias magnetic field from being disturbed by a magnetic field from a magnetic recording medium or the like.
摘要翻译：本发明的磁阻传感器被设计成基于磁阻层的电阻的变化来检测磁场，并且包括基板，磁阻层，用于稳定磁阻层的磁化的磁化稳定层和形成在磁阻层或磁化稳定层上的导电层。该传感器的特征在于，磁阻层和磁化稳定层彼此层叠，使得这些层在它们的两个端部区域彼此磁耦合，其交换耦合力高于剩余区域的交换耦合力。利用这种布置，提供了具有高灵敏度的磁阻传感器，其可以在防止偏磁磁场被来自磁记录介质等的磁场的干扰的同时向MR层施加期望的偏置磁场。

6. 发明授权

US5828525A Differential detection magnetoresistance head 失效
标题翻译：差分检测磁阻头
公开(公告)号：US5828525A
公开(公告)日：1998-10-27
申请号：US401489
申请日：1995-03-10
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
IPC分类号： G11B5/00 , G11B5/127 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3954 , G11B2005/0029 , G11B2005/3996 , G11B5/1278
摘要： A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.
摘要翻译： GMR元件部分由层叠结构形成，该叠层结构包括至少一对铁磁层和介于一对铁磁层之间的非磁性中间层。信号磁场检测铁磁层将可选地布置在一对铁磁层的外侧。 GMR元件部分由层叠结构构成，该叠层结构具有一对跨越非磁性中间层彼此相对的GMR铁磁体层或层叠结构，该层叠结构具有跨越非磁性中间体彼此相对的一对GMR铁磁层层和至少一个通过非磁性中间层的介质设置在其间的低磁导率铁磁层。 GMR元件部分用作读取头，用于感测当相互相反方向的信号磁场施加到一对GMR铁磁层并且显示差分检测型输出响应时变化的电阻。将使用粒状铁磁中间层作为GMR元件部分。

7. 发明授权

US06483673B1 Differential detection magnetoresistance head with laminated structure 失效
标题翻译：差分检测磁阻头与层叠结构
公开(公告)号：US06483673B1
公开(公告)日：2002-11-19
申请号：US09085101
申请日：1998-05-28
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Yuzo Kamiguchi , Susumu Hashimoto , Tomomi Funayama , Hiromi Fuke , Junichi Akiyama , Kazuhiro Saito
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/3903 , G11B5/3954 , G11B2005/0029 , G11B2005/3996
摘要： A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one each outside the pair of ferromagnetic layers. The GMR element part consists of a laminated structure which is provided with one pair of GMR ferromagnetic layers opposed to each other across a nonmagnetic intermediate layer or a laminated structure which is provided with one pair of GMR ferromagnetic layer opposed to each other across a nonmagnetic intermediate layer and at least one low-permeability ferromagnetic layer disposed there between through the medium of a nonmagnetic intermediate layer. The GMR element part functions as a read head for sensing the resistance which is varied when signal magnetic fields of mutual opposite directions are applied to the pair of GMR ferromagnetic layers and displaying a differential detection type output response. A granular type ferromagnetic intermediate layer will be used as the GMR element part.
摘要翻译： GMR元件部分由层叠结构形成，该叠层结构包括至少一对铁磁层和介于一对铁磁层之间的非磁性中间层。信号磁场检测铁磁层将可选地布置在一对铁磁层的外侧。 GMR元件部分由层叠结构构成，该叠层结构具有一对跨越非磁性中间层彼此相对的GMR铁磁体层或层叠结构，该层叠结构具有跨越非磁性中间体彼此相对的一对GMR铁磁层层和至少一个通过非磁性中间层的介质设置在其间的低磁导率铁磁层。 GMR元件部分用作读取头，用于感测当相互相反方向的信号磁场施加到一对GMR铁磁层并且显示差分检测型输出响应时变化的电阻。将使用粒状铁磁中间层作为GMR元件部分。

8. 发明授权

US5304975A Magnetoresistance effect element and magnetoresistance effect sensor 失效
标题翻译：磁阻效应元件和磁阻效应传感器
公开(公告)号：US5304975A
公开(公告)日：1994-04-19
申请号：US965073
申请日：1992-10-22
申请人： Yoshiaki Saito , Susumu Hashimoto , Koichiro Inomata , Hitoshi Iwasaki , Reiko Kondoh , Junichi Akiyama , Yuichi Ohsawa , Toshihiko Ohto
发明人： Yoshiaki Saito , Susumu Hashimoto , Koichiro Inomata , Hitoshi Iwasaki , Reiko Kondoh , Junichi Akiyama , Yuichi Ohsawa , Toshihiko Ohto
IPC分类号： G01R33/09 , G11B5/39 , H01L43/10 , H01L43/08 , G01R33/02
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01L43/10 , G11B2005/3996
摘要： A magnetoresistance effect element includes a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect, and an reversal assist layer formed on the multilayer to assist reversal of a magnetic moment of the magnetic layer.
摘要翻译：磁阻效应元件包括通过堆叠磁性和非磁性层以显示磁阻效应而获得的多层，以及形成在多层上的反向辅助层，以辅助磁性层的磁矩的反转。

9. 发明授权

US5576915A Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof 失效
标题翻译：具有反铁磁性子层的磁阻头插入在第一和第二自旋阀单元之间以交换其内部磁性膜
公开(公告)号：US5576915A
公开(公告)日：1996-11-19
申请号：US472487
申请日：1995-06-07
申请人： Junichi Akiyama , Hiroaki Yoda , Yuichi Ohsawa , Hitoshi Iwasaki
发明人： Junichi Akiyama , Hiroaki Yoda , Yuichi Ohsawa , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , B82Y10/00 , B82Y25/00 , G11B5/3954 , G11B5/399 , G11B2005/3996
摘要： A magnetoresistive head includes an antiferromagnetic portion interposed between first and second spin-valve units. Sense current supply directions through the first and second spin-valve units are perpendicular to a head facing surface of a magnetic recording medium. The first spin-valve unit is formed of a first inner magnetic film, a first outer magnetic film and a nonmagnetic film interposed between and in direct physical contact with the first inner magnetic film and the first outer magnetic film. The second spin-valve unit is formed of a second inner magnetic film, a second outer magnetic film and a nonmagnetic film interposed between and in direct physical contact with the second inner magnetic film and the second outer magnetic film. The antiferromagnetic portion is formed of a first antiferromagnetic sublayer and a second antiferromagnetic sublayer laminated on the first antiferromagnetic sublayer. The first antiferromagnetic sublayer is in contact with the first inner magnetic film to apply a first exchange bias magnetic field to the first inner magnetic film in a direction perpendicular to the head facing surface of the magnetic recording medium. The second antiferromagnetic sublayer is in contact with the second inner magnetic film to apply a second exchange bias magnetic field to the second inner magnetic film in a direction perpendicular to the surface of the magnetic recording medium. The second exchange bias magnetic field has a polarity opposite to that of the first exchange bias magnetic field.
摘要翻译：磁阻头包括介于第一和第二自旋阀单元之间的反铁磁部分。通过第一和第二自旋阀单元的感测电流供给方向垂直于磁记录介质的朝向头部的表面。第一自旋阀单元由第一内部磁性膜，第一外部磁性膜和介于第一内部磁性膜和第一外部磁性膜直接物理接触之间的非磁性膜形成。第二自旋阀单元由第二内部磁性膜，第二外部磁性膜和介于第二内部磁性膜和第二外部磁性膜直接物理接触之间的非磁性膜形成。反铁磁部分由层叠在第一反铁磁性子层上的第一反铁磁性子层和第二反铁磁性层构成。第一反铁磁性子层与第一内部磁性膜接触，以在垂直于磁记录介质的朝向磁头的表面的方向上向第一内部磁性膜施加第一交换偏置磁场。第二反铁磁子层与第二内磁性膜接触，以在垂直于磁记录介质的表面的方向上向第二内磁膜施加第二交换偏置磁场。第二交换偏置磁场的极性与第一交换偏置磁场的极性相反。

10. 发明授权

US5768066A Magnetoresistive head having an antiferromagnetic layer interposed between first and second magnetoresistive elements 失效
标题翻译：具有介于第一和第二磁阻元件之间的反铁磁层的磁阻头
公开(公告)号：US5768066A
公开(公告)日：1998-06-16
申请号：US568437
申请日：1995-12-06
申请人： Junichi Akiyama , Hiroaki Yoda , Yuichi Ohsawa , Hitoshi Iwasaki
发明人： Junichi Akiyama , Hiroaki Yoda , Yuichi Ohsawa , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , B82Y10/00 , B82Y25/00 , G11B5/3954 , G11B5/399 , G11B2005/3996
摘要： A magnetoresistive head including a first magnetoresistive element, a second magnetoresistive element, and an antiferromagnetic layer interposed between the first and second magnetoresistive elements. The antiferromagnetic layer may be replaced by two antiferromagnetic sub layers which are formed on the outer sides of the first and second magnetoresistive elements, respectively.
摘要翻译：包括第一磁阻元件，第二磁阻元件和介于第一和第二磁阻元件之间的反铁磁层的磁阻头。反铁磁层可以由分别形成在第一和第二磁阻元件的外侧上的两个反铁磁性子层代替。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式