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    • 6. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07741659B2
    • 2010-06-22
    • US11924079
    • 2007-10-25
    • Ching-Ho YangJung-Ching ChenShyan-Yhu WangShang-Chi Wu
    • Ching-Ho YangJung-Ching ChenShyan-Yhu WangShang-Chi Wu
    • H01L27/10
    • H01L29/78H01L21/28123H01L29/1087
    • A semiconductor device is provided. An isolation structure is formed in a substrate to define a first and a second active region, and a channel active region therebetween. A field implant region is formed below a portion of the isolation structure around the first, second, and channel active regions. A channel active region includes two first sides defining a channel width. The distance from each first side to a second side of a neighboring field implant region is d1. The shortest distance from a third side of each first or second active region to an extension line of each second side of the field implant region is d2. R=d1/d2, where 0.15≦R≦0.85. A gate structure covers the channel active region and extends over a portion of the isolation structure. Source/drain doped regions are formed in the first and the second active regions.
    • 提供半导体器件。 在衬底中形成隔离结构以限定第一和第二有源区以及它们之间的沟道有源区。 场隔离区域形成在隔离结构的围绕第一,第二和沟道活性区域的部分下方。 通道有效区包括限定通道宽度的两个第一侧。 从相邻的场注入区域的每个第一侧到第二侧的距离为d1。 每个第一或第二有源区域的第三侧到场注入区域的每个第二侧的延伸线的最短距离为d2。 R = d1 / d2,其中0.15≦̸ R< E; 0.85。 栅极结构覆盖沟道有源区并且在隔离结构的一部分上延伸。 源极/漏极掺杂区域形成在第一和第二有源区域中。
    • 8. 发明申请
    • SEMICONDUCTOR DEVICE HAVING CAPACITOR AND FABRICATING METHOD THEREOF
    • 具有电容器的半导体器件及其制造方法
    • US20070141776A1
    • 2007-06-21
    • US11306162
    • 2005-12-19
    • Jung-Ching ChenChin-Hung LiuChien-Ming LinMing-Tsung Tung
    • Jung-Ching ChenChin-Hung LiuChien-Ming LinMing-Tsung Tung
    • H01L21/8244
    • H01L28/40H01L27/1085
    • A semiconductor device having a capacitor is provided. The semiconductor device includes a substrate, a capacitor and a metal-oxide-semiconductor (MOS) transistor. The MOS transistor is located in a MOS transistor region of the substrate, and the MOS transistor region has a first bottom diffusion region. The capacitor is located in a capacitor region of the substrate and consisted of a second bottom diffusion region located in the substrate, a first dielectric layer located over the second bottom diffusion region, a bottom conductive layer located over the first dielectric layer, a second dielectric layer located over the bottom conductive layer, and a top conductive layer located over the second dielectric layer. The first bottom diffusion region and the second bottom diffusion region are different conductive type.
    • 提供具有电容器的半导体器件。 半导体器件包括衬底,电容器和金属氧化物半导体(MOS)晶体管。 MOS晶体管位于衬底的MOS晶体管区域中,并且MOS晶体管区域具有第一底部扩散区域。 电容器位于衬底的电容器区域中,由位于衬底中的第二底部扩散区域,位于第二底部扩散区域上方的第一电介质层,位于第一电介质层上方的底部导电层,第二电介质层 位于所述底部导电层上方的层,以及位于所述第二介电层上方的顶部导电层。 第一底部扩散区域和第二底部扩散区域是不同的导电类型。