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    • 3. 发明授权
    • Vertical structure non-volatile memory device and method of manufacturing the same
    • 垂直结构非易失性存储器件及其制造方法
    • US08748249B2
    • 2014-06-10
    • US13456415
    • 2012-04-26
    • Jun-kyu YangKi-hyun HwangPhil-ouk NamJae-young AhnHan-mei ChoiDong-chul Yoo
    • Jun-kyu YangKi-hyun HwangPhil-ouk NamJae-young AhnHan-mei ChoiDong-chul Yoo
    • H01L21/8238
    • H01L29/7926H01L27/11556H01L27/11582H01L29/7889
    • A vertical structure non-volatile memory device in which a gate dielectric layer is prevented from protruding toward a substrate; a resistance of a ground selection line (GSL) electrode is reduced so that the non-volatile memory device is highly integrated and has improved reliability, and a method of manufacturing the same are provided. The method includes: sequentially forming a polysilicon layer and an insulating layer on a silicon substrate; forming a gate dielectric layer and a channel layer through the polysilicon layer and the insulating layer, the gate dielectric layer and the channel layer extending in a direction perpendicular to the silicon substrate; forming an opening for exposing the silicon substrate, through the insulating layer and the polysilicon layer; removing the polysilicon layer exposed through the opening, by using a halogen-containing reaction gas at a predetermined temperature; and filling a metallic layer in the space formed by removing the polysilicon layer.
    • 一种垂直结构的非易失性存储器件,其中防止栅介质层向衬底突出; 降低了接地选择线(GSL)电极的电阻,使得非易失性存储器件高度集成并且具有改进的可靠性,并且提供了其制造方法。 该方法包括:在硅衬底上依次形成多晶硅层和绝缘层; 通过所述多晶硅层和所述绝缘层形成栅介质层和沟道层,所述栅介质层和所述沟道层在垂直于所述硅衬底的方向上延伸; 形成用于使所述硅衬底暴露于所述绝缘层和所述多晶硅层的开口; 通过在预定温度下使用含卤素反应气体去除通过开口暴露的多晶硅层; 并在通过去除多晶硅层形成的空间中填充金属层。