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1. 发明申请

US20060174473A1 Magnetic random access memory device and method of forming the same 有权
标题翻译：磁性随机存取存储器件及其形成方法
公开(公告)号：US20060174473A1
公开(公告)日：2006-08-10
申请号：US11347280
申请日：2006-02-06
申请人： Se-Chung Oh , Jang-Eun Lee , Jun-Soo Bae , Hyun-Jo Kim , Kyung-Tae Nam , Young-Ki Ha
发明人： Se-Chung Oh , Jang-Eun Lee , Jun-Soo Bae , Hyun-Jo Kim , Kyung-Tae Nam , Young-Ki Ha
IPC分类号： G11B5/33 , G11B5/127 , H04R31/00
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , G11B5/3909 , H01L27/228 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044
摘要： Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a substrate, an intermediate insulating layer covering the digit line, a magnetic tunnel junction (MTJ) pattern disposed on the intermediate insulating layer and over the digit line, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., and a bit line connected to the capping pattern and disposed to intersect the digit line. A method of forming a semiconductor memory device may include forming a digit line on a substrate, forming an intermediate insulating layer covering the digit line, forming a magnetic tunnel junction (MTJ) pattern on the intermediate insulating layer, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., performing an annealing operation at a temperature of about 350° C. or higher, and forming a bit line connected to the capping pattern and disposed to intersect the digit line.
摘要翻译：本发明的示例性实施例公开了半导体存储器件和形成存储器件的方法。半导体存储器件可以包括设置在衬底上的数字线，覆盖数字线的中间绝缘层，设置在中间绝缘层上方和数字线上的磁性隧道结（MTJ）图案，MTJ图案包括顺序堆叠下磁性图案，上磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上磁性图案反应，而位线连接到封盖图案并且设置成与数字线相交。形成半导体存储器件的方法可以包括在衬底上形成数字线，形成覆盖数字线的中间绝缘层，在中间绝缘层上形成磁隧道结（MTJ）图案，MTJ图案包括顺序层叠的较低的磁性图案，上部磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上部磁性图案反应，在约350℃或更高的温度下进行退火操作，并且形成连接到所述封盖图案并且设置成与所述数字线相交的位线。

2. 发明授权

US07582890B2 Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof 有权
标题翻译：在其两端具有弯曲尖端的磁性隧道结结构，使用其的磁性随机存取存储器以及用于其形成的光掩模
公开(公告)号：US07582890B2
公开(公告)日：2009-09-01
申请号：US11103078
申请日：2005-04-11
申请人： Young-Ki Ha , Jang-Eun Lee , Se-Chung Oh , Jun-Soo Bae , Hyun-Jo Kim , Kyung-Tae Nam
发明人： Young-Ki Ha , Jang-Eun Lee , Se-Chung Oh , Jun-Soo Bae , Hyun-Jo Kim , Kyung-Tae Nam
IPC分类号： H01L27/20
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228 , H01L43/08
摘要： Provided are magnetic tunnel junction structures having bended tips at both ends thereof, magnetic RAM cells employing the same and photo masks used in formation thereof. The magnetic tunnel junction structures have a pinned layer pattern, a tunneling insulation layer pattern and a free layer pattern, which are stacked on an integrated circuit substrate. At least the free layer pattern has a main body as well as first and second bended tips each protruded from both ends of the main body when viewed from a plan view.
摘要翻译：提供了在其两端具有弯曲尖端的磁性隧道结结构，使用其的磁性RAM单元和其形成中使用的光掩模。磁性隧道结结构具有钉扎层图案，隧道绝缘层图案和自由层图案，其堆叠在集成电路基板上。至少自由层图案具有主体以及当从俯视图观察时各自从主体的两端突出的第一和第二弯曲末端。

3. 发明申请

US20100213558A1 Magnetic Memory Device 有权
标题翻译：磁存储器件
公开(公告)号：US20100213558A1
公开(公告)日：2010-08-26
申请号：US12773451
申请日：2010-05-04
申请人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , Se-Chung Oh , Kyung-Tae Nam
发明人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , Se-Chung Oh , Kyung-Tae Nam
IPC分类号： H01L29/82
CPC分类号： G11C11/15 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F41/302 , H01L43/08
摘要： A magnetic memory device is provided. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.
摘要翻译：提供磁存储器件。磁存储器件在衬底上包括不变的钉扎图案和可变的钉扎图案。在不变的钉扎图案和可变钉扎图案之间插入隧道势垒图案，并且钉扎图案介于不变钉扎图案和隧道屏障图案之间。在隧道势垒图案和可变钉扎图案之间插入无存储图案，并且在存储空闲图案和可变钉扎图案之间插入无引导图案。在存储和无引导模式之间插入一个自由的反转模式。自由反转图案反转无存储图案的磁化方向和反向自由图案的磁化方向。

4. 发明授权

US07372090B2 Magnetic random access memory device and method of forming the same 有权
标题翻译：磁性随机存取存储器件及其形成方法
公开(公告)号：US07372090B2
公开(公告)日：2008-05-13
申请号：US11347280
申请日：2006-02-06
申请人： Se-Chung Oh , Jang-Eun Lee , Jun-Soo Bae , Hyun-Jo Kim , Kyung-Tae Nam , Young-Ki Ha
发明人： Se-Chung Oh , Jang-Eun Lee , Jun-Soo Bae , Hyun-Jo Kim , Kyung-Tae Nam , Young-Ki Ha
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , G11B5/3909 , H01L27/228 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044
摘要： Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a substrate, an intermediate insulating layer covering the digit line, a magnetic tunnel junction (MTJ) pattern disposed on the intermediate insulating layer and over the digit line, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., and a bit line connected to the capping pattern and disposed to intersect the digit line. A method of forming a semiconductor memory device may include forming a digit line on a substrate, forming an intermediate insulating layer covering the digit line, forming a magnetic tunnel junction (MTJ) pattern on the intermediate insulating layer, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., performing an annealing operation at a temperature of about 350° C. or higher, and forming a bit line connected to the capping pattern and disposed to intersect the digit line.
摘要翻译：本发明的示例性实施例公开了半导体存储器件和形成存储器件的方法。半导体存储器件可以包括设置在衬底上的数字线，覆盖数字线的中间绝缘层，设置在中间绝缘层上方和数字线上的磁性隧道结（MTJ）图案，MTJ图案包括顺序堆叠下磁性图案，上磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上磁性图案反应，而位线连接到封盖图案并且设置成与数字线相交。形成半导体存储器件的方法可以包括在衬底上形成数字线，形成覆盖数字线的中间绝缘层，在中间绝缘层上形成磁隧道结（MTJ）图案，MTJ图案包括顺序层叠的较低的磁性图案，上部磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上部磁性图案反应，在约350℃或更高的温度下进行退火操作，并且形成连接到所述封盖图案并且设置成与所述数字线相交的位线。

5. 发明申请

US20060027846A1 Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methods 审中-公开
标题翻译：磁性随机存取存储器件包括磁性隧道结结构和衬底之间的接触插塞以及相关方法
公开(公告)号：US20060027846A1
公开(公告)日：2006-02-09
申请号：US11145478
申请日：2005-06-03
申请人： Jang-Eun Lee , Se-Chung Oh , Jun-Soo Bae , Hyun-Jo Kim , Young-Ki Ha , Kyung-Tae Nam
发明人： Jang-Eun Lee , Se-Chung Oh , Jun-Soo Bae , Hyun-Jo Kim , Young-Ki Ha , Kyung-Tae Nam
IPC分类号： H01L29/94
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161
摘要： A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line. More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetic tunnel junction structure. In addition, the contact plug may provide electrical connection between the magnetic tunnel junction structure and the semiconductor substrate, and the contact plug may be between the magnetic tunnel junction structure and the semiconductor substrate. Related methods are also discussed.
摘要翻译：磁性随机存取存储器件可以包括半导体衬底，磁性隧道结（MTJ）结构，接触插塞和数字线。更具体地，MTJ结构可以在半导体衬底上，并且数字线可以与磁性隧道结结构相邻。此外，接触插头可以在磁性隧道结结构和半导体衬底之间提供电连接，并且接触插塞可以在磁性隧道结结构和半导体衬底之间。还讨论了相关方法。

6. 发明授权

US07732222B2 Magnetic memory device and method of fabricating the same 有权
标题翻译：磁记忆装置及其制造方法
公开(公告)号：US07732222B2
公开(公告)日：2010-06-08
申请号：US11465075
申请日：2006-08-16
申请人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , Se-Chung Oh , Kyung-Tae Nam
发明人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , Se-Chung Oh , Kyung-Tae Nam
IPC分类号： H01L21/00
CPC分类号： G11C11/15 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F41/302 , H01L43/08
摘要： There is provided a magnetic memory device and a method of forming the same. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.
摘要翻译：提供了一种磁存储器件及其形成方法。磁存储器件在衬底上包括不变的钉扎图案和可变的钉扎图案。在不变的钉扎图案和可变钉扎图案之间插入隧道势垒图案，并且钉扎图案介于不变钉扎图案和隧道屏障图案之间。在隧道势垒图案和可变钉扎图案之间插入无存储图案，并且在存储空闲图案和可变钉扎图案之间插入无引导图案。在存储和无引导模式之间插入一个自由的反转模式。自由反转图案反转无存储图案的磁化方向和反向自由图案的磁化方向。

7. 发明申请

US20060039190A1 Method of writing to MRAM devices 有权
标题翻译：写入MRAM设备的方法
公开(公告)号：US20060039190A1
公开(公告)日：2006-02-23
申请号：US11097495
申请日：2005-04-01
申请人： Hyun-Jo Kim , Jang-Eun Lee , Se-Chung Oh , Jun-Soo Bae , Young-Ki Ha , Kyung-Tae Nam
发明人： Hyun-Jo Kim , Jang-Eun Lee , Se-Chung Oh , Jun-Soo Bae , Young-Ki Ha , Kyung-Tae Nam
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method of writing to magnetic random access memory (MRAM) devices is provided. The method includes preparing a digit line disposed on a semiconductor substrate, a bit line crossing over the digit line, and a magnetic tunnel junction (MTJ) interposed between the digit line and the bit line. The MTJ has a pinned layer, a tunneling insulating layer, and a synthetic anti-ferromagnetic (SAF) free layer which are sequentially stacked. In addition, the SAF free layer has a bottom free layer and a top free layer which are separated by an exchange spacer layer. An initial magnetization state of the MTJ is read and compared with a desired magnetization state. When the initial magnetization state is different from the desired magnetization state, a first write line pulse is applied to one of the digit line and the bit line, and a second write line pulse is applied to the other of the digit line and the bit line, thereby changing the magnetization state of the MTJ. The MTJ may be disposed at an angle equal to or greater than 0° and less than 90° to a line to which the second write line pulse is applied.
摘要翻译：提供了一种写入磁性随机存取存储器（MRAM）器件的方法。该方法包括准备设置在半导体衬底上的数字线，与数字线交叉的位线以及置于数字线和位线之间的磁性隧道结（MTJ）。 MTJ具有钉扎层，隧道绝缘层和顺序层叠的合成反铁磁（SAF）层。此外，SAF自由层具有由交换间隔层隔开的无底层和顶部自由层。读取MTJ的初始磁化状态并与期望的磁化状态进行比较。当初始磁化状态不同于期望的磁化状态时，第一写入线脉冲被施加到数字线和位线之一，并且第二写入线脉冲被施加到数字线和位线中的另一个，从而改变MTJ的磁化状态。 MTJ可以以与第二写入线脉冲施加的线等于或大于0°且小于90°的角度布置。

8. 发明授权

US08035145B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US08035145B2
公开(公告)日：2011-10-11
申请号：US12773451
申请日：2010-05-04
申请人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , Se-Chung Oh , Kyung-Tae Nam
发明人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , Se-Chung Oh , Kyung-Tae Nam
IPC分类号： H01L21/02
CPC分类号： G11C11/15 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F41/302 , H01L43/08
摘要： A magnetic memory device is provided. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.
摘要翻译：提供磁存储器件。磁存储器件在衬底上包括不变的钉扎图案和可变的钉扎图案。在不变的钉扎图案和可变钉扎图案之间插入隧道势垒图案，并且钉扎图案介于不变钉扎图案和隧道屏障图案之间。在隧道势垒图案和可变钉扎图案之间插入无存储图案，并且在存储空闲图案和可变钉扎图案之间插入无引导图案。在存储和无引导模式之间插入一个自由的反转模式。自由反转图案反转无存储图案的磁化方向和反向自由图案的磁化方向。

9. 发明授权

US07645619B2 Magnetic random access memory device and method of forming the same 有权
标题翻译：磁性随机存取存储器件及其形成方法
公开(公告)号：US07645619B2
公开(公告)日：2010-01-12
申请号：US12073098
申请日：2008-02-29
申请人： Se-Chung Oh , Jang-Eun Lee , Jun-Soo Bae , Hyun-Jo Kim , Kyung-Tae Nam , Young-Ki Ha
发明人： Se-Chung Oh , Jang-Eun Lee , Jun-Soo Bae , Hyun-Jo Kim , Kyung-Tae Nam , Young-Ki Ha
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , G11B5/3909 , H01L27/228 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044
摘要： Example embodiments of the present invention disclose a semiconductor memory device and a method of forming a memory device. A semiconductor memory device may include a digit line disposed on a substrate, an intermediate insulating layer covering the digit line, a magnetic tunnel junction (MTJ) pattern disposed on the intermediate insulating layer and over the digit line, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., and a bit line connected to the capping pattern and disposed to intersect the digit line. A method of forming a semiconductor memory device may include forming a digit line on a substrate, forming an intermediate insulating layer covering the digit line, forming a magnetic tunnel junction (MTJ) pattern on the intermediate insulating layer, the MTJ pattern including a sequentially stacked lower magnetic pattern, upper magnetic pattern, and capping pattern, wherein the capping pattern does not react with the upper magnetic pattern at a temperature above about 280° C., performing an annealing operation at a temperature of about 350° C. or higher, and forming a bit line connected to the capping pattern and disposed to intersect the digit line.
摘要翻译：本发明的示例性实施例公开了半导体存储器件和形成存储器件的方法。半导体存储器件可以包括设置在衬底上的数字线，覆盖数字线的中间绝缘层，设置在中间绝缘层上方和数字线上的磁性隧道结（MTJ）图案，MTJ图案包括顺序堆叠下磁性图案，上磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上磁性图案反应，而位线连接到封盖图案并且设置成与数字线相交。形成半导体存储器件的方法可以包括在衬底上形成数字线，形成覆盖数字线的中间绝缘层，在中间绝缘层上形成磁隧道结（MTJ）图案，MTJ图案包括顺序层叠的较低的磁性图案，上部磁性图案和封盖图案，其中封盖图案在高于约280℃的温度下不与上部磁性图案反应，在约350℃或更高的温度下进行退火操作，并且形成连接到所述封盖图案并且设置成与所述数字线相交的位线。

10. 发明授权

US07218556B2 Method of writing to MRAM devices 有权
标题翻译：写入MRAM设备的方法
公开(公告)号：US07218556B2
公开(公告)日：2007-05-15
申请号：US11097495
申请日：2005-04-01
申请人： Hyun-Jo Kim , Jang-Eun Lee , Se-Chung Oh , Jun-Soo Bae , Young-Ki Ha , Kyung-Tae Nam
发明人： Hyun-Jo Kim , Jang-Eun Lee , Se-Chung Oh , Jun-Soo Bae , Young-Ki Ha , Kyung-Tae Nam
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method of writing to magnetic random access memory (MRAM) devices is provided. The method includes preparing a digit line disposed on a semiconductor substrate, a bit line crossing over the digit line, and a magnetic tunnel junction (MTJ) interposed between the digit line and the bit line. The MTJ has a pinned layer, a tunneling insulating layer, and a synthetic anti-ferromagnetic (SAF) free layer which are sequentially stacked. In addition, the SAF free layer has a bottom free layer and a top free layer which are separated by an exchange spacer layer. An initial magnetization state of the MTJ is read and compared with a desired magnetization state. When the initial magnetization state is different from the desired magnetization state, a first write line pulse is applied to one of the digit line and the bit line, and a second write line pulse is applied to the other of the digit line and the bit line, thereby changing the magnetization state of the MTJ. The MTJ may be disposed at an angle equal to or greater than 0° and less than 90° to a line to which the second write line pulse is applied.
摘要翻译：提供了一种写入磁性随机存取存储器（MRAM）器件的方法。该方法包括准备设置在半导体衬底上的数字线，与数字线交叉的位线以及置于数字线和位线之间的磁性隧道结（MTJ）。 MTJ具有钉扎层，隧道绝缘层和顺序层叠的合成反铁磁（SAF）层。此外，SAF自由层具有由交换间隔层隔开的无底层和顶部自由层。读取MTJ的初始磁化状态并与期望的磁化状态进行比较。当初始磁化状态不同于期望的磁化状态时，第一写入线脉冲被施加到数字线和位线之一，并且第二写入线脉冲被施加到数字线和位线中的另一个，从而改变MTJ的磁化状态。 MTJ可以以与第二写入线脉冲施加的线等于或大于0°且小于90°的角度布置。

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