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1. 发明授权

US07569430B2 Phase changeable structure and method of forming the same 有权
标题翻译：相变结构及其形成方法
公开(公告)号：US07569430B2
公开(公告)日：2009-08-04
申请号：US11674580
申请日：2007-02-13
申请人： Jun-Soo Bae , Hideki Horii , Ji-Hye Yi , Young-Soo Lim
发明人： Jun-Soo Bae , Hideki Horii , Ji-Hye Yi , Young-Soo Lim
IPC分类号： H01L21/82
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： The present invention relates to a phase changeable structure having decreased amounts of defects and a method of forming the phase changeable structure. A stacked composite is first formed by (i) forming a phase changeable layer including a chalcogenide is formed on a lower electrode, (ii) forming an etch stop layer having a first etch rate with respect to a first etching material including chlorine on the phase changeable layer, and (iii) forming a conductive layer having a second etch rate with respect to the first etching material on the etch stop layer. The conductive layer of the stacked composite is then etched using the first etching material to form an upper electrode. The etch stop layer and the phase changeable layer are then etched using a second etching material that is substantially flee of chlorine to form an etch stop pattern and a phase changeable pattern, respectively.
摘要翻译：本发明涉及具有减少的缺陷量的相变结构和形成相变结构的方法。首先通过（i）在下电极上形成包括硫族化物的相变层来形成堆叠复合体，（ii）形成相对于在相上包括氯的第一蚀刻材料具有第一蚀刻速率的蚀刻停止层可变层，和（iii）形成相对于蚀刻停止层上的第一蚀刻材料具有第二蚀刻速率的导电层。然后使用第一蚀刻材料蚀刻层叠复合体的导电层以形成上电极。然后使用基本上不含氯的第二蚀刻材料来蚀刻蚀刻停止层和相变层，以分别形成蚀刻停止图案和相变图案。

2. 发明申请

US20100144087A1 METHODS OF FORMING PHASE-CHANGEABLE MEMORY DEVICES INCLUDING AN ADIABATIC LAYER 有权
标题翻译：形成包括ADIABATIC LAYER的相变记忆装置的方法
公开(公告)号：US20100144087A1
公开(公告)日：2010-06-10
申请号：US12708742
申请日：2010-02-19
申请人： Yong-Ho Ha , Bong-Jin Kuh , Ji-Hye Yi , Jun-Soo Bae
发明人： Yong-Ho Ha , Bong-Jin Kuh , Ji-Hye Yi , Jun-Soo Bae
IPC分类号： H01L21/8239
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/128 , H01L45/143 , H01L45/144 , H01L45/1675
摘要： Phase-changeable memory devices include a lower electrode electrically connected to an impurity region of a transistor in a substrate and a programming layer pattern including a first phase-changeable material on the lower electrode. An adiabatic layer pattern including a material having a lower thermal conductivity than the first phase-changeable material is on the programming layer pattern and an upper electrode is on the adiabatic layer pattern.
摘要翻译：相变存储器件包括电连接到衬底中的晶体管的杂质区的下电极和在下电极上包括第一相变材料的编程层图案。包含具有比第一相变材料低的热导率的材料的绝热层图案在编程层图案上，上电极在绝热层图案上。

3. 发明申请

US20060039192A1 Phase-changeable memory devices including an adiabatic layer and methods of forming the same 失效
标题翻译：包括绝热层的相变存储器件及其形成方法
公开(公告)号：US20060039192A1
公开(公告)日：2006-02-23
申请号：US11193961
申请日：2005-07-29
申请人： Yong-Ho Ha , Bong-Jin Kuh , Ji-Hye Yi , Jun-Soo Bae
发明人： Yong-Ho Ha , Bong-Jin Kuh , Ji-Hye Yi , Jun-Soo Bae
IPC分类号： G11C11/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/128 , H01L45/143 , H01L45/144 , H01L45/1675
摘要： Phase-changeable memory devices include a lower electrode electrically connected to an impurity region of a transistor in a substrate and a programming layer pattern including a first phase-changeable material on the lower electrode. An adiabatic layer pattern including a material having a lower thermal conductivity than the first phase-changeable material is on the programming layer pattern and an upper electrode is on the adiabatic layer pattern.
摘要翻译：相变存储器件包括电连接到衬底中的晶体管的杂质区的下电极和在下电极上包括第一相变材料的编程层图案。包含具有比第一相变材料低的热导率的材料的绝热层图案在编程层图案上，上电极在绝热层图案上。

4. 发明授权

US08513051B2 Methods of forming phase-changeable memory devices including an adiabatic layer 有权
标题翻译：形成包括绝热层的相变存储器件的方法
公开(公告)号：US08513051B2
公开(公告)日：2013-08-20
申请号：US12708742
申请日：2010-02-19
申请人： Yong-Ho Ha , Bong-Jin Kuh , Ji-Hye Yi , Jun-Soo Bae
发明人： Yong-Ho Ha , Bong-Jin Kuh , Ji-Hye Yi , Jun-Soo Bae
IPC分类号： H01L21/8239
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/128 , H01L45/143 , H01L45/144 , H01L45/1675
摘要： Phase-changeable memory devices include a lower electrode electrically connected to an impurity region of a transistor in a substrate and a programming layer pattern including a first phase-changeable material on the lower electrode. An adiabatic layer pattern including a material having a lower thermal conductivity than the first phase-changeable material is on the programming layer pattern and an upper electrode is on the adiabatic layer pattern.
摘要翻译：相变存储器件包括电连接到衬底中的晶体管的杂质区的下电极和在下电极上包括第一相变材料的编程层图案。包含具有比第一相变材料低的热导率的材料的绝热层图案在编程层图案上，上电极在绝热层图案上。

5. 发明授权

US07692176B2 Phase-changeable memory devices including an adiabatic layer 失效
标题翻译：包括绝热层的相变存储器件
公开(公告)号：US07692176B2
公开(公告)日：2010-04-06
申请号：US11193961
申请日：2005-07-29
申请人： Yong-Ho Ha , Bong-Jin Kuh , Ji-Hye Yi , Jun-Soo Bae
发明人： Yong-Ho Ha , Bong-Jin Kuh , Ji-Hye Yi , Jun-Soo Bae
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/128 , H01L45/143 , H01L45/144 , H01L45/1675
摘要： Phase-changeable memory devices include a lower electrode electrically connected to an impurity region of a transistor in a substrate and a programming layer pattern including a first phase-changeable material on the lower electrode. An adiabatic layer pattern including a material having a lower thermal conductivity than the first phase-changeable material is on the programming layer pattern and an upper electrode is on the adiabatic layer pattern.
摘要翻译：相变存储器件包括电连接到衬底中的晶体管的杂质区的下电极和在下电极上包括第一相变材料的编程层图案。包含具有比第一相变材料低的热导率的材料的绝热层图案在编程层图案上，上电极在绝热层图案上。

6. 发明授权

US07397092B2 Phase changable memory device structures 有权
标题翻译：相变存储器件结构
公开(公告)号：US07397092B2
公开(公告)日：2008-07-08
申请号：US11364950
申请日：2006-03-01
申请人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
发明人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
摘要翻译：可相变存储器件可以包括衬底，衬底上的绝缘层，第一和第二电极以及第一和第二电极之间的相变材料的图案。更具体地，绝缘层可以在其中具有孔，并且第一电极可以在绝缘层中的孔中。此外，第二电极的部分可以延伸超过相变材料图案的边缘。还讨论了相关方法。

7. 发明授权

US07037749B2 Methods for forming phase changeable memory devices 有权
标题翻译：用于形成相变存储器件的方法
公开(公告)号：US07037749B2
公开(公告)日：2006-05-02
申请号：US10780246
申请日：2004-02-18
申请人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
发明人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
IPC分类号： H01L21/00 , H01L51/40
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
摘要翻译：可相变存储器件可以包括衬底，衬底上的绝缘层，第一和第二电极以及第一和第二电极之间的相变材料的图案。更具体地，绝缘层可以在其中具有孔，并且第一电极可以在绝缘层中的孔中。此外，第二电极的部分可以延伸超过相变材料图案的边缘。还讨论了相关方法。

8. 发明授权

US07763878B2 Phase changeable memory device structures 有权
标题翻译：相变存储器件结构
公开(公告)号：US07763878B2
公开(公告)日：2010-07-27
申请号：US12132920
申请日：2008-06-04
申请人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
发明人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
摘要翻译：可相变存储器件可以包括衬底，衬底上的绝缘层，第一和第二电极以及第一和第二电极之间的相变材料的图案。更具体地，绝缘层可以在其中具有孔，并且第一电极可以在绝缘层中的孔中。此外，第二电极的部分可以延伸超过相变材料图案的边缘。还讨论了相关方法。

9. 发明申请

US20060148125A1 Phase changable memory device structures 有权
标题翻译：相变存储器件结构
公开(公告)号：US20060148125A1
公开(公告)日：2006-07-06
申请号：US11364950
申请日：2006-03-01
申请人： Hideki Horii , Suk-ho Joo , Ji-Hye Yi
发明人： Hideki Horii , Suk-ho Joo , Ji-Hye Yi
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
摘要翻译：可相变存储器件可以包括衬底，衬底上的绝缘层，第一和第二电极以及第一和第二电极之间的相变材料的图案。更具体地，绝缘层可以在其中具有孔，并且第一电极可以在绝缘层中的孔中。此外，第二电极的部分可以延伸超过相变材料图案的边缘。还讨论了相关方法。

10. 发明申请

US20080272357A1 Phase Changeable Memory Device Structures 有权
标题翻译：相变存储器件结构
公开(公告)号：US20080272357A1
公开(公告)日：2008-11-06
申请号：US12132920
申请日：2008-06-04
申请人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
发明人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
摘要翻译：可相变存储器件可以包括衬底，衬底上的绝缘层，第一和第二电极以及第一和第二电极之间的相变材料的图案。更具体地，绝缘层可以在其中具有孔，并且第一电极可以在绝缘层中的孔中。此外，第二电极的部分可以延伸超过相变材料图案的边缘。还讨论了相关方法。

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