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1. 发明申请

US20080272357A1 Phase Changeable Memory Device Structures 有权
标题翻译：相变存储器件结构
公开(公告)号：US20080272357A1
公开(公告)日：2008-11-06
申请号：US12132920
申请日：2008-06-04
申请人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
发明人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
摘要翻译：可相变存储器件可以包括衬底，衬底上的绝缘层，第一和第二电极以及第一和第二电极之间的相变材料的图案。更具体地，绝缘层可以在其中具有孔，并且第一电极可以在绝缘层中的孔中。此外，第二电极的部分可以延伸超过相变材料图案的边缘。还讨论了相关方法。

2. 发明授权

US07763878B2 Phase changeable memory device structures 有权
标题翻译：相变存储器件结构
公开(公告)号：US07763878B2
公开(公告)日：2010-07-27
申请号：US12132920
申请日：2008-06-04
申请人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
发明人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
摘要翻译：可相变存储器件可以包括衬底，衬底上的绝缘层，第一和第二电极以及第一和第二电极之间的相变材料的图案。更具体地，绝缘层可以在其中具有孔，并且第一电极可以在绝缘层中的孔中。此外，第二电极的部分可以延伸超过相变材料图案的边缘。还讨论了相关方法。

3. 发明申请

US20060148125A1 Phase changable memory device structures 有权
标题翻译：相变存储器件结构
公开(公告)号：US20060148125A1
公开(公告)日：2006-07-06
申请号：US11364950
申请日：2006-03-01
申请人： Hideki Horii , Suk-ho Joo , Ji-Hye Yi
发明人： Hideki Horii , Suk-ho Joo , Ji-Hye Yi
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
摘要翻译：可相变存储器件可以包括衬底，衬底上的绝缘层，第一和第二电极以及第一和第二电极之间的相变材料的图案。更具体地，绝缘层可以在其中具有孔，并且第一电极可以在绝缘层中的孔中。此外，第二电极的部分可以延伸超过相变材料图案的边缘。还讨论了相关方法。

4. 发明授权

US07397092B2 Phase changable memory device structures 有权
标题翻译：相变存储器件结构
公开(公告)号：US07397092B2
公开(公告)日：2008-07-08
申请号：US11364950
申请日：2006-03-01
申请人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
发明人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
摘要翻译：可相变存储器件可以包括衬底，衬底上的绝缘层，第一和第二电极以及第一和第二电极之间的相变材料的图案。更具体地，绝缘层可以在其中具有孔，并且第一电极可以在绝缘层中的孔中。此外，第二电极的部分可以延伸超过相变材料图案的边缘。还讨论了相关方法。

5. 发明授权

US07037749B2 Methods for forming phase changeable memory devices 有权
标题翻译：用于形成相变存储器件的方法
公开(公告)号：US07037749B2
公开(公告)日：2006-05-02
申请号：US10780246
申请日：2004-02-18
申请人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
发明人： Hideki Horii , Suk-Ho Joo , Ji-Hye Yi
IPC分类号： H01L21/00 , H01L51/40
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
摘要翻译：可相变存储器件可以包括衬底，衬底上的绝缘层，第一和第二电极以及第一和第二电极之间的相变材料的图案。更具体地，绝缘层可以在其中具有孔，并且第一电极可以在绝缘层中的孔中。此外，第二电极的部分可以延伸超过相变材料图案的边缘。还讨论了相关方法。

6. 发明授权

US07569430B2 Phase changeable structure and method of forming the same 有权
标题翻译：相变结构及其形成方法
公开(公告)号：US07569430B2
公开(公告)日：2009-08-04
申请号：US11674580
申请日：2007-02-13
申请人： Jun-Soo Bae , Hideki Horii , Ji-Hye Yi , Young-Soo Lim
发明人： Jun-Soo Bae , Hideki Horii , Ji-Hye Yi , Young-Soo Lim
IPC分类号： H01L21/82
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： The present invention relates to a phase changeable structure having decreased amounts of defects and a method of forming the phase changeable structure. A stacked composite is first formed by (i) forming a phase changeable layer including a chalcogenide is formed on a lower electrode, (ii) forming an etch stop layer having a first etch rate with respect to a first etching material including chlorine on the phase changeable layer, and (iii) forming a conductive layer having a second etch rate with respect to the first etching material on the etch stop layer. The conductive layer of the stacked composite is then etched using the first etching material to form an upper electrode. The etch stop layer and the phase changeable layer are then etched using a second etching material that is substantially flee of chlorine to form an etch stop pattern and a phase changeable pattern, respectively.
摘要翻译：本发明涉及具有减少的缺陷量的相变结构和形成相变结构的方法。首先通过（i）在下电极上形成包括硫族化物的相变层来形成堆叠复合体，（ii）形成相对于在相上包括氯的第一蚀刻材料具有第一蚀刻速率的蚀刻停止层可变层，和（iii）形成相对于蚀刻停止层上的第一蚀刻材料具有第二蚀刻速率的导电层。然后使用第一蚀刻材料蚀刻层叠复合体的导电层以形成上电极。然后使用基本上不含氯的第二蚀刻材料来蚀刻蚀刻停止层和相变层，以分别形成蚀刻停止图案和相变图案。

7. 发明授权

US08581612B2 Probe card and test apparatus including the same 有权
标题翻译：探针卡和测试仪器包括它们
公开(公告)号：US08581612B2
公开(公告)日：2013-11-12
申请号：US12817826
申请日：2010-06-17
申请人： Hideki Horii , Young-kuk Kim , Mi-lim Park
发明人： Hideki Horii , Young-kuk Kim , Mi-lim Park
IPC分类号： G01R31/20
CPC分类号： G01R31/2889
摘要： A probe card and a test apparatus including the probe card for improving test reliability. The probe card may include a first input terminal Microelectromechanical Systems (MEMS) switch that connects a first input terminal and a first input probe pin, wherein the first input terminal MEMS switch comprises a control portion that receives an operation signal and a connection portion that connects the first input terminal and the first input probe pin. The probe card may further include a first output terminal MEMS switch that connects a first output terminal and a first output probe pin, wherein the first output terminal MEMS switch comprises a control portion that receives the operation signal and a connection portion that connects the first output terminal and the first output probe pin.
摘要翻译：探针卡和测试装置，包括用于提高测试可靠性的探针卡。探针卡可以包括连接第一输入端和第一输入探针的第一输入端微机电系统（MEMS）开关，其中第一输入端MEMS开关包括接收操作信号的控制部分和连接第一输入端和第一输入探针。探针卡还可以包括连接第一输出端和第一输出探针的第一输出端MEMS开关，其中第一输出端MEMS开关包括接收操作信号的控制部分和连接第一输出端端子和第一个输出探针。

8. 发明授权

US08552412B2 Variable resistance memory device and method of forming the same 有权
公开(公告)号：US08552412B2
公开(公告)日：2013-10-08
申请号：US12973124
申请日：2010-12-20
申请人： Jeonghee Park , Hideki Horii , Hyeyoung Park , Jin Ho Oh , Hyun-Suk Kwon
发明人： Jeonghee Park , Hideki Horii , Hyeyoung Park , Jin Ho Oh , Hyun-Suk Kwon
IPC分类号： H01L45/00
CPC分类号： H01L45/16 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/1293 , H01L45/141 , H01L45/1683
摘要： Provided are a variable resistance memory device and a method of forming the same. The variable resistance memory device may include a substrate, a plurality of bottom electrodes on the substrate, and a first interlayer insulating layer including a trench formed therein. The trench exposes the bottom electrodes and extends in a first direction. The variable resistance memory device further includes a top electrode provided on the first interlayer insulating layer and extending in a second direction crossing the first direction and a plurality of variable resistance patterns provided in the trench and having sidewalls aligned with a sidewall of the top electrode.

9. 发明授权

US07498064B2 Laser reflowing of phase changeable memory element to close a void therein 有权
标题翻译：相变存储元件的激光回流以封闭其中的空隙
公开(公告)号：US07498064B2
公开(公告)日：2009-03-03
申请号：US11071729
申请日：2005-03-03
申请人： Hideki Horii
发明人： Hideki Horii
IPC分类号： B05D5/12 , B05D3/00 , H01L29/04
CPC分类号： H01L21/76816 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1666
摘要： A phase changeable memory element is formed by conformally forming a phase changeable material film in a contact hole on a substrate so as to create a void in the phase changeable material film in the contact hole. The void is at least partially closed by impinging a laser beam on the phase changeable material film sufficiently to reflow the phase changeable material film in the void.
摘要翻译：相变存储元件通过在基板上的接触孔中共形形成相变材料膜而形成，从而在接触孔中的相变材料膜中产生空隙。通过在相变材料膜上冲击激光束至少部分地封闭空隙，以使空隙中的相变材料膜回流。

10. 发明申请

US20070111440A1 Phase changeable memory cell array region and method of forming the same 有权
标题翻译：相变存储单元阵列区域及其形成方法
公开(公告)号：US20070111440A1
公开(公告)日：2007-05-17
申请号：US11581012
申请日：2006-10-16
申请人： Hyeong-Geun An , Hideki Horii , Sang-Yeol Kang
发明人： Hyeong-Geun An , Hideki Horii , Sang-Yeol Kang
IPC分类号： H01L21/00 , H01L21/336 , H01L29/94
CPC分类号： H01L45/144 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/165 , H01L45/1666
摘要： A phase changeable memory cell array region includes a lower interlayer insulating layer disposed on a semiconductor substrate. The region also includes a plurality of conductive plugs disposed through the lower interlayer insulating layer. The region also includes a phase changeable material pattern operably disposed on the lower interlayer insulating layer, the phase changeable pattern covering at least two of the plurality of conductive plugs, wherein the phase changeable material pattern includes a plurality of first regions in contact with one or more of the plurality of conductive plugs and at least one second region interposed between the plurality of the first regions, wherein the at least one second region has a lower thermal conductivity than the plurality of first regions. The phase changeable memory cell array region also includes an upper interlayer insulating layer covering at least one of the phase changeable material pattern and the lower interlayer insulating layer. The region also includes conductive patterns disposed through the upper interlayer insulating layer and electrically connected to a plurality of predetermined regions of the plurality of first regions.
摘要翻译：相变存储单元阵列区域包括设置在半导体衬底上的下层间绝缘层。该区域还包括穿过下层间绝缘层设置的多个导电插塞。所述区域还包括可操作地设置在所述下层间绝缘层上的可相变材料图案，所述相变图案覆盖所述多个导电插塞中的至少两个，其中所述相变材料图案包括多个与第多个导电插塞中的多个和插入在多个第一区域之间的至少一个第二区域，其中至少一个第二区域具有比多个第一区域更低的热导率。相变存储单元阵列区域还包括覆盖相变材料图案和下层间绝缘层中的至少一个的上层间绝缘层。该区域还包括通过上层间绝缘层设置并电连接到多个第一区域中的多个预定区域的导电图案。

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