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1. 发明申请

US20110306173A1 METHOD FABRICATING SEMICONDUCTOR DEVICE USING MULTIPLE POLISHING PROCESSES 有权
标题翻译：使用多个抛光工艺制作半导体器件的方法
公开(公告)号：US20110306173A1
公开(公告)日：2011-12-15
申请号：US13084657
申请日：2011-04-12
申请人： Jun-Soo BAE , Suk-Hun CHOI , Won-Jun LEE , Joon-Sang PARK
发明人： Jun-Soo BAE , Suk-Hun CHOI , Won-Jun LEE , Joon-Sang PARK
IPC分类号： H01L21/02
CPC分类号： H01L45/1683 , H01L45/06 , H01L45/141
摘要： A method of fabricating a phase change memory device includes the use of first, second and third polishing processes. The first polishing process forms a first contact portion using a first sacrificial layer and the second polishing process forms a phase change material pattern using a second sacrificial layer. After removing the first and second sacrificial layers to expose resultant protruding structures of the first contact portion and the phase change material pattern, a third polishing process is used to polish the resultant protruding structures using an insulation layer as a polishing stopper layer.
摘要翻译：制造相变存储器件的方法包括使用第一，第二和第三抛光工艺。第一抛光工艺使用第一牺牲层形成第一接触部分，并且第二抛光工艺使用第二牺牲层形成相变材料图案。在去除第一和第二牺牲层以暴露第一接触部分的相应突出结构和相变材料图案之后，使用第三抛光工艺来使用绝缘层作为抛光停止层来抛光所得的突出结构。

2. 发明申请

US20130112914A1 Slurry Composition For Polishing And Method Of Manufacturing Phase Change Memory Device Using The Same 审中-公开
标题翻译：用于抛光的浆料组合物及其制造相变存储器件的方法
公开(公告)号：US20130112914A1
公开(公告)日：2013-05-09
申请号：US13617160
申请日：2012-09-14
申请人： Choong-Ho HAN , Sang-Kyun KIM , Ye-Hwan KIM , Joon-Sang PARK , Jin-Woo BAE , Won-Jun LEE , Kyoung-Moon KANG , Jae-Dong LEE
发明人： Choong-Ho HAN , Sang-Kyun KIM , Ye-Hwan KIM , Joon-Sang PARK , Jin-Woo BAE , Won-Jun LEE , Kyoung-Moon KANG , Jae-Dong LEE
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1472 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.
摘要翻译：浆料组合物包括研磨剂，氧化剂和包含聚环氧乙烷共聚物的第一吸附抑制剂。制造相变存储器件的方法可以包括在填充沟槽的层间绝缘膜上提供包括具有沟槽和相变材料层的层间绝缘膜的衬底，并且使用相变材料层对相变材料层进行化学机械抛光浆料组成以形成相变材料图案层。

3. 发明申请

US20100124817A1 METHOD OF FABRICATING SELF-ALIGNED CONTACT PAD USING CHEMICAL MECHANICAL POLISHING PROCESS 有权
标题翻译：使用化学机械抛光工艺制作自对准接触垫的方法
公开(公告)号：US20100124817A1
公开(公告)日：2010-05-20
申请号：US12694715
申请日：2010-01-27
申请人： Ho-Young KIM , Chang-Ki HONG , Bo-Un YOON , Joon-Sang PARK
发明人： Ho-Young KIM , Chang-Ki HONG , Bo-Un YOON , Joon-Sang PARK
IPC分类号： H01L21/3213 , H01L21/28
CPC分类号： H01L21/76897 , H01L21/7684 , H01L27/10873 , H01L27/10885
摘要： A method of fabricating a self-aligned contact pad (SAC) includes forming stacks of a conductive line and a capping layer on a semiconductor substrate, spacers covering sidewalls of the stacks, and an insulation layer filling gaps between the stacks and exposing the top of the capping layer, etching the capping layer to form damascene grooves, forming a plurality of first etching masks with a material different from that of the capping layer to fill the damascene grooves without covering the top of the insulation layer, and forming a second etching mask having an opening region that exposes some of the first etching masks and a portion of the insulation layer located between the first etching masks. The method further includes etching the portion of the insulation layer exposed by the opening region using the first and second etching masks to form a plurality of opening holes, removing the second etching mask, forming a conductive layer filling the opening holes to cover the remaining first etching masks and performing a chemical mechanical polishing (CMP) process on the conductive layer using the capping layer as a polishing end point to remove the first etching masks such that a plurality of SAC pads separated from each other are formed that fill the opening holes.
摘要翻译：一种制造自对准接触焊盘（SAC）的方法包括在半导体衬底上形成导电线和覆盖层的叠层，覆盖堆叠的侧壁的间隔物和填充堆叠之间的间隙的绝缘层，覆盖层，蚀刻覆盖层以形成镶嵌槽，用不同于覆盖层的材料形成多个第一蚀刻掩模以填充镶嵌槽而不覆盖绝缘层的顶部，以及形成第二蚀刻掩模具有暴露一些第一蚀刻掩模的开口区域和位于第一蚀刻掩模之间的绝缘层的一部分。该方法还包括使用第一和第二蚀刻掩模蚀刻由开口区域暴露的绝缘层的部分，以形成多个开孔，去除第二蚀刻掩模，形成填充开孔的导电层以覆盖剩余的第一蚀刻掩模并使用覆盖层作为抛光终点在导电层上进行化学机械抛光（CMP）工艺，以去除第一蚀刻掩模，从而形成填充开孔的彼此分离的多个SAC焊盘。

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