会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • Method of manufacturing field emission device
    • 场致发射装置的制造方法
    • US20070176206A1
    • 2007-08-02
    • US11604731
    • 2006-11-28
    • Jun-Hee ChoiHo-Suk KangChan-Wook BaikHa-Jong Kim
    • Jun-Hee ChoiHo-Suk KangChan-Wook BaikHa-Jong Kim
    • H01L31/00
    • H01J9/025H01J3/021
    • A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided. The method includes steps of sequentially forming a cathode layer, a first insulating layer, and a gate layer on a substrate, forming a protection layer on the gate electrode layer, etching portions of the protection layer and gate electrode to form a plurality of first opening holes where portions of the first insulating layer being exposed through the first opening holes, forming a second insulating layer on the protection layer and on the first opening holes, forming a focus electrode layer on the second insulating layer, forming a photoresist layer on the focus electrode layer, etching a portion of the photoresist layer and a portion of the focus electrode layer to form a second opening hole where a portion of the second insulating layer being exposed through the second opening hole, and forming emitter holes exposing a portion of the cathode layer by etching the exposed surface of the second insulating layer to a bottom surface of the first insulating layer. After removing the photoresist layer electron emission emitters are formed on the cathode layer.
    • 提供了一种制造场致发射器件(FED)的方法,其减少了光掩模图案化工艺的数量并提高了FED的制造成品率。 该方法包括以下步骤:在衬底上依次形成阴极层,第一绝缘层和栅极层,在栅电极层上形成保护层,蚀刻保护层和栅电极的部分,以形成多个第一开口 第一绝缘层的部分通过第一开孔露出的孔,在保护层和第一开孔上形成第二绝缘层,在第二绝缘层上形成聚焦电极层,在焦点上形成光致抗蚀剂层 蚀刻光致抗蚀剂层的一部分和聚焦电极层的一部分以形成第二开孔,其中第二绝缘层的一部分通过第二开孔暴露,并且形成暴露阴极的一部分的发射极 通过将第二绝缘层的暴露表面蚀刻到第一绝缘层的底表面。 在除去光致抗蚀剂层之后,在阴极层上形成电子发射发射体。
    • 5. 发明授权
    • Method of manufacturing field emission device
    • 场致发射装置的制造方法
    • US07517710B2
    • 2009-04-14
    • US11604731
    • 2006-11-28
    • Jun-Hee ChoiHo-Suk KangChan-Wook BaikHa-Jong Kim
    • Jun-Hee ChoiHo-Suk KangChan-Wook BaikHa-Jong Kim
    • H01L21/00H01L29/06
    • H01J9/025H01J3/021
    • A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided. The method includes steps of sequentially forming a cathode layer, a first insulating layer, and a gate layer on a substrate, forming a protection layer on the gate electrode layer, etching portions of the protection layer and gate electrode to form a plurality of first opening holes where portions of the first insulating layer being exposed through the first opening holes, forming a second insulating layer on the protection layer and on the first opening holes, forming a focus electrode layer on the second insulating layer, forming a photoresist layer on the focus electrode layer, etching a portion of the photoresist layer and a portion of the focus electrode layer to form a second opening hole where a portion of the second insulating layer being exposed through the second opening hole, and forming emitter holes exposing a portion of the cathode layer by etching the exposed surface of the second insulating layer to a bottom surface of the first insulating layer. After removing the photoresist layer electron emission emitters are formed on the cathode layer.
    • 提供了一种制造场致发射器件(FED)的方法,其减少了光掩模图案化工艺的数量并提高了FED的制造成品率。 该方法包括以下步骤:在衬底上依次形成阴极层,第一绝缘层和栅极层,在栅电极层上形成保护层,蚀刻保护层和栅电极的部分,以形成多个第一开口 第一绝缘层的部分通过第一开孔露出的孔,在保护层和第一开孔上形成第二绝缘层,在第二绝缘层上形成聚焦电极层,在焦点上形成光致抗蚀剂层 蚀刻光致抗蚀剂层的一部分和聚焦电极层的一部分以形成第二开孔,其中第二绝缘层的一部分通过第二开孔暴露,并且形成暴露阴极的一部分的发射极 通过将第二绝缘层的暴露表面蚀刻到第一绝缘层的底表面。 在除去光致抗蚀剂层之后,在阴极层上形成电子发射发射体。