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    • 5. 发明申请
    • METHOD FOR PROCESSING SILICON SUBSTRATE AND METHOD FOR PRODUCING SUBSTRATE FOR LIQUID EJECTING HEAD
    • 加工硅基板的方法和用于生产用于液体喷射头的基板的方法
    • US20110020966A1
    • 2011-01-27
    • US12839301
    • 2010-07-19
    • Mitsuru ChidaKeiji EdamatsuToshiyasu SakaiJun Yamamuro
    • Mitsuru ChidaKeiji EdamatsuToshiyasu SakaiJun Yamamuro
    • H01L21/306
    • B41J2/1603B41J2/1628B41J2/1629B41J2/1631B41J2/1645
    • A method for processing a silicon substrate includes preparing a first silicon substrate including an etching mask layer including first and second opening portions; forming a first recess in a portion of the silicon substrate corresponding to a region in the first opening portion; etching the silicon substrate by crystal anisotropic etching through the etching mask layer with an etching apparatus and an etchant, the etching proceeding in the first and second opening portions to form a through hole in a position corresponding to the first opening portion and to form a second recess in a position corresponding to the second opening portion; calculating an etching rate of the silicon substrate in terms of the etchant by using the second recess; and determining, by using the calculated etching rate, an etching condition for etching another silicon substrate with the etching apparatus after the etching of the first silicon substrate.
    • 一种处理硅衬底的方法包括:制备包含第一和第二开口部分的蚀刻掩模层的第一硅衬底; 在所述硅衬底的与所述第一开口部分中的区域相对应的部分中形成第一凹部; 通过蚀刻装置和蚀刻剂通过蚀刻掩模层通过晶体各向异性蚀刻来蚀刻硅衬底,蚀刻在第一和第二开口部分中进行,以在对应于第一开口部分的位置形成通孔,并形成第二 在与第二开口部相对应的位置处凹陷; 通过使用第二凹槽计算蚀刻剂方面的硅衬底的蚀刻速率; 以及通过使用所计算的蚀刻速率,在蚀刻所述第一硅衬底之后,使用所述蚀刻装置来确定用于蚀刻另一硅衬底的蚀刻条件。