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    • 1. 发明申请
    • SUBSTRATE TRANSFER MODULE AND SUBSTRATE PROCESSING SYSTEM
    • 基板传输模块和基板处理系统
    • US20090028672A1
    • 2009-01-29
    • US12180028
    • 2008-07-25
    • Jun YAMAWAKUTsuyoshi Moriya
    • Jun YAMAWAKUTsuyoshi Moriya
    • H01L21/67
    • H01L21/67766H01L21/67778H01L21/67781
    • A substrate transfer module that can prevent corrosion of components, adhesion of particles to the substrate, and increases in the manufacturing cost and the size of the substrate transfer module. A substrate transfer module is connected to a substrate processing module. The substrate processing module implements desired processing on a substrate. A substrate transfer device transfers a substrate and includes a holding unit and a moving unit. The holding unit holds the substrate, and the moving unit moves the holding unit. A transfer chamber houses the substrate transfer device in an interior thereof that is isolated from an external atmosphere. An isolation device isolates at least the holding unit and the substrate held by the holding unit from an interior atmosphere of the transfer chamber.
    • 可以防止组分腐蚀,颗粒粘附到基底上的衬底转移模块,以及衬底转移模块的制造成本和尺寸的增加。 衬底转移模块连接到衬底处理模块。 衬底处理模块在衬底上实现所需的处理。 衬底传送装置传送衬底并且包括保持单元和移动单元。 保持单元保持基板,移动单元移动保持单元。 传送室在其内部容纳与外部气氛隔离的衬底传送装置。 隔离装置至少将保持单元和由保持单元保持的基板与传送室的内部空气隔离。
    • 6. 发明申请
    • PLASMA PROCESSING APPARATUS
    • 等离子体加工设备
    • US20120247954A1
    • 2012-10-04
    • US13432623
    • 2012-03-28
    • Jun YAMAWAKUChishio KOSHIMIZU
    • Jun YAMAWAKUChishio KOSHIMIZU
    • C23F4/00
    • H01J37/32091H01J37/32642H01J37/32715
    • Disclosed is a capacitively-coupled plasma etching apparatus, in which a focus ring is provided surrounding a substrate placing area of a placing table for adjusting a state of plasma. A ring type insulating member is installed along the focus ring between the top surface of the placing table and the bottom surface of the focus ring, and a heat transfer member is installed between the top surface of the placing table and the bottom surface of the focus ring to be closely attached to the top surface and the bottom surface at a position adjacent to the insulating member in a diameter direction of a wafer. During the plasma processing, the heat in the focus ring is transferred to the placing table through the heat transfer member to be cooled down and the amount of sediment attached to the rear surface of the wafer can be reduced.
    • 公开了一种电容耦合等离子体蚀刻装置,其中围绕用于调节等离子体状态的放置台的基板放置区域设置聚焦环。 环形绝缘构件沿着聚焦环安装在放置台的顶表面和聚焦环的底表面之间,传热构件安装在放置台的顶表面和焦点的底表面之间 环在晶片的直径方向上在与绝缘构件相邻的位置处紧密附着到顶表面和底表面。 在等离子体处理期间,聚焦环中的热量通过传热构件传递到放置台以被冷却,并且可以减少附着到晶片的后表面的沉积物的量。
    • 7. 发明申请
    • SUBSTRATE PROCESSING APPARATUS
    • 基板加工设备
    • US20120175063A1
    • 2012-07-12
    • US13344267
    • 2012-01-05
    • Jun YAMAWAKUChishio KOSHIMIZU
    • Jun YAMAWAKUChishio KOSHIMIZU
    • H01L21/3065
    • H01L21/67069H01J37/32477H01J37/32559H01J37/32642H01L21/68735
    • A substrate processing apparatus capable of removing deposits attached on a component of a lower temperature in a gap between two components, temperatures of which are greatly different from each other, without degrading a working ratio of the substrate processing apparatus. In the substrate processing apparatus, a chamber receives a wafer, a focus ring surrounds the wafer disposed in the chamber, a side surface protective member transmits a laser beam, a laser beam irradiating apparatus irradiates the laser beam to the side surface protective member, an inner focus ring of the focus ring is disposed adjacent to the wafer and is cooled down and an outer focus ring surrounds the inner focus ring and is not cooled down in a focus ring, and a facing surface of the side surface protective member faces a gap between the inner focus ring and the outer focus ring.
    • 一种基板处理装置,其能够在不降低基板处理装置的加工率的情况下,除去附着在两个部件之间的间隙中的两个部件之间的间隙附近的沉积物,温度彼此大不相同。 在基板处理装置中,室接收晶片,聚焦环围绕设置在室中的晶片,侧面保护构件透射激光束,激光束照射装置将激光束照射到侧面保护构件, 聚焦环的内聚焦环与晶片相邻地设置并被冷却,并且外聚焦环围绕内聚焦环,并且在聚焦环中不被冷却,并且侧表面保护构件的面对表面 在内聚焦环和外聚焦环之间。
    • 9. 发明申请
    • TEMPERATURE CONTROL SYSTEM
    • 温度控制系统
    • US20120073781A1
    • 2012-03-29
    • US13240274
    • 2011-09-22
    • Jun YAMAWAKUChishio KOSHIMIZUTatsuo MATSUDOKenji NAGAI
    • Jun YAMAWAKUChishio KOSHIMIZUTatsuo MATSUDOKenji NAGAI
    • B60H1/00
    • H01L21/67248G01J9/02G01J2005/583
    • The temperature control system includes: a susceptor which allows an object to be processed to be held on a top surface thereof and includes a flow path, through which a temperature adjusting medium flows, formed therein; a temperature measuring unit which measures a temperature of the object to be processed held on the top surface of the susceptor; a first temperature adjusting unit which adjusts a temperature of the temperature adjusting medium flowing through the flow path; and a second temperature adjusting unit which is disposed between the susceptor and the first temperature adjusting unit, and adjusts a temperature of the temperature adjusting medium based on a result of the measurement of the temperature measuring unit.
    • 温度控制系统包括:一个允许被处理物体被保持在其顶面上的基座,并且包括在其中形成温度调节介质流过的流路; 温度测量单元,其测量保持在所述基座的顶表面上的被处理物体的温度; 第一温度调节单元,其调节流过所述流路的温度调节介质的温度; 以及第二温度调节单元,其设置在所述基座和所述第一温度调节单元之间,并且基于所述温度测量单元的测量结果来调节所述温度调节介质的温度。