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1. 发明授权

US06617592B2 Charged particle beam system and chamber of charged particle beam system 有权
标题翻译：带电粒子束系统和带电粒子束系统的腔室
公开(公告)号：US06617592B2
公开(公告)日：2003-09-09
申请号：US09810478
申请日：2001-03-19
申请人： Jun Takamatsu , Kiyoshi Hattori , Hitoshi Sunaoshi , Naoharu Shimomura , Kiminobu Akeno , Munehiro Ogasawara
发明人： Jun Takamatsu , Kiyoshi Hattori , Hitoshi Sunaoshi , Naoharu Shimomura , Kiminobu Akeno , Munehiro Ogasawara
IPC分类号： A61N500
CPC分类号： H01J37/304 , H01J2237/20292 , H01J2237/3175
摘要： A charged particle beam system includes a chamber having an opening in a ceiling, a table placed immediately below the opening and movable in one direction, a laser interferometer set in the chamber, including a laser oscillator placed along the moving direction of the table, a movable mirror placed on the table side opposing the oscillator, a beam splitter placed to cross the laser beam and a fixed mirror fixed, immediately above the beam splitter, on the ceiling of the chamber, an optical lens barrel having an opening communicating with the opening of the chamber, and a beam gun set on a ceiling of the optical lens barrel to irradiate a specimen placed on the table with a charged particle beam through the first and second openings. At least an upper wall portion from the opening to the fixed mirror of the chamber is made of an invar alloy.
摘要翻译：带电粒子束系统包括：在天花板上具有开口的腔室，放置在开口正下方并可在一个方向上移动的工作台;设置在腔室中的激光干涉仪，包括沿着工作台移动方向放置的激光振荡器，放置在与振荡器相对的台面侧的可移动反射镜，放置成穿过激光束的分束器和在分束器正上方固定的固定镜，位于腔室的天花板上，光学透镜镜筒具有与开口连通的开口以及设置在光学镜筒的天花板上的射束，以通过第一和第二开口照射放置在桌子上的带有带电粒子束的样本。至少从腔室的开口到固定反射镜的上壁部分由凹入合金制成。

2. 发明授权

US06836319B2 Optical system adjusting method for energy beam apparatus 有权
标题翻译：能量束装置的光学系统调整方法
公开(公告)号：US06836319B2
公开(公告)日：2004-12-28
申请号：US10819201
申请日：2004-04-07
申请人： Munehiro Ogasawara , Jun Takamatsu , Hitoshi Sunaoshi , Naoharu Shimomura
发明人： Munehiro Ogasawara , Jun Takamatsu , Hitoshi Sunaoshi , Naoharu Shimomura
IPC分类号： G01J100
CPC分类号： H01J37/304 , H01J2237/30433 , H01J2237/3175
摘要： A method for adjusting an optical system of an energy beam apparatus by using a mark signal that is obtained by one-dimensionally or two-dimensionally scanning a mark on a sample with an energy beam. The mark has a one-dimensional or two-dimensional periodic structure. A first mark signal is detected by scanning the mark with a beam. The mark is set on the optical axis of the optical system. A second mark signal is detected by scanning the mark with a beam. The mark is located at a position that is deviated from the optical axis. A deviation of a deflection position is determined based on a phase difference between the first and second mark signals.
摘要翻译：一种能量束装置的光学系统的调整方法，该方法是利用能量束对样品上的标记进行二维或二维扫描而得到的标记信号。标记具有一维或二维周期性结构。通过用光束扫描标记来检测第一标记信号。标记设置在光学系统的光轴上。通过用光束扫描标记来检测第二标记信号。标记位于偏离光轴的位置。基于第一和第二标记信号之间的相位差来确定偏转位置的偏差。

3. 发明授权

US06781680B1 Optical system adjusting method for energy beam apparatus 失效
公开(公告)号：US06781680B1
公开(公告)日：2004-08-24
申请号：US10602701
申请日：2003-06-25
申请人： Munehiro Ogasawara , Jun Takamatsu , Hitoshi Sunaoshi , Naoharu Shimomura
发明人： Munehiro Ogasawara , Jun Takamatsu , Hitoshi Sunaoshi , Naoharu Shimomura
IPC分类号： G01J100
CPC分类号： H01J37/304 , H01J2237/30433 , H01J2237/3175
摘要： A method for adjusting an optical system of an energy beam apparatus by using a mark signal that is obtained by one-dimensionally or two-dimensionally scanning a mark on a sample with an energy beam. The mark has a one-dimensional or two-dimensional periodic structure. A first mark signal is detected by scanning the mark with a beam. The mark is set on the optical axis of the optical system. A second mark signal is detected by scanning the mark with a beam. The mark is located at a position that is deviated from the optical axis. A deviation of a deflection position is determined based on a phase difference between the first and second mark signals.

4. 发明授权

US06172364B2 Charged particle beam irradiation apparatus 失效
标题翻译：带电粒子束照射装置
公开(公告)号：US06172364B2
公开(公告)日：2001-01-09
申请号：US09118924
申请日：1998-07-20
申请人： Munehiro Ogasawara , Jun Takamatsu , Naoharu Shimomura , Shusuke Yoshitake , Takayuki Abe , Masamitsu Itoh
发明人： Munehiro Ogasawara , Jun Takamatsu , Naoharu Shimomura , Shusuke Yoshitake , Takayuki Abe , Masamitsu Itoh
IPC分类号： H01J3726
CPC分类号： H01J3/40 , H01J37/02 , H01J2237/0213
摘要： A reflection prevention board of a charged particle beam irradiation apparatus of the present invention comprises a laminate sheet having a plurality of thin films and a plurality of microholes through the laminate sheet. According to the present invention the reflection prevention board can be manufactured at a lower cost, the reason being that it is easier to form microholes in the thin films and then laminate these thin films in an aligned relation than to drill holes through a thicker sheet. By doing so it is possible to achieve a better yield. Further, much deeper microholes, which might not otherwise be achieved on a thick sheet, can be formed by using more thin films and a reflection prevention effect can be improved by doing so.
摘要翻译：本发明的带电粒子束照射装置的反射防止板包括具有多个薄膜的叠层片和通过层压片的多个微孔。根据本发明，可以以更低的成本制造防反射板，其原因是在薄膜中更容易形成微孔，然后以与排列较深的片钻孔的排列关系层叠这些薄膜。通过这样做，可以实现更好的产量。此外，可以通过使用更多的薄膜来形成在厚片材上可能不能实现的更深的微孔，并且通过这样做可以改善防反射效果。

5. 发明授权

US09343129B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US09343129B2
公开(公告)日：2016-05-17
申请号：US13719896
申请日：2012-12-19
申请人： Naoharu Shimomura
发明人： Naoharu Shimomura
IPC分类号： G11C11/00 , G11C11/16 , G11C11/02
CPC分类号： G11C11/16 , G11C11/02 , G11C11/161
摘要： A magnetic memory according to an embodiment includes: a first MTJ element including a first storage layer including a first magnetic film having a changeable magnetization direction, a first reference layer including a second magnetic film having a fixed magnetization direction, and a first tunnel barrier layer provided therebetween; and a second MTJ element including a second storage layer including a third magnetic film having a changeable magnetization direction and magnetically connected to the first storage layer, a second reference layer including a fourth magnetic film having a fixed magnetization direction parallel to the magnetization direction of the first reference layer, and a second tunnel barrier layer provided therebetween, the second MTJ element being arranged in parallel with the first MTJ element in a direction perpendicular to a stacking direction of the first MTJ element.
摘要翻译：根据实施例的磁存储器包括：第一MTJ元件，包括第一存储层，包括具有可变磁化方向的第一磁性膜，第一参考层，包括具有固定的磁化方向的第二磁性膜，以及第一隧道势垒层设置在其间; 以及第二MTJ元件，包括第二存储层，其包括具有可变磁化方向的第三磁性膜，并且磁性地连接到第一存储层;第二参考层，包括具有与第一存储层的磁化方向平行的固定磁化方向的第四磁性膜第一参考层和设置在其间的第二隧道势垒层，第二MTJ元件在垂直于第一MTJ元件的层叠方向的方向上与第一MTJ元件平行地布置。

6. 发明授权

US08472242B2 Magnetoresistive effect memory 有权
标题翻译：磁阻效应记忆
公开(公告)号：US08472242B2
公开(公告)日：2013-06-25
申请号：US12748785
申请日：2010-03-29
申请人： Naoharu Shimomura , Eiji Kitagawa , Sumio Ikegawa , Yoshihisa Iwata
发明人： Naoharu Shimomura , Eiji Kitagawa , Sumio Ikegawa , Yoshihisa Iwata
IPC分类号： G11C11/14
CPC分类号： G11C11/1673 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1693
摘要： A magnetoresistive effect memory of an aspect of the present invention including a magnetoresistive effect element including a first magnetic layer having an invariable magnetization direction, a second magnetic layer having a variable magnetization direction, and an interlayer provided between the first magnetic layer and the second magnetic layer, and a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to read data stored in the magnetoresistive effect element, wherein the pulse width of the read current is shorter than a period from an initial state to a cooperative coherent precession movement of magnetizations included in the second magnetic layer.
摘要翻译：本发明的磁阻效应存储器包括磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层，以及设置在第一磁性层和第二磁性层之间的中间层以及读取电路，其使脉冲形读取电流通过磁阻效应元件以读取存储在磁阻效应元件中的数据，其中读取电流的脉冲宽度短于从初始状态到协作相干的周期包括在第二磁性层中的磁化的进动运动。

7. 发明授权

US08223533B2 Magnetoresistive effect device and magnetic memory 有权
标题翻译：磁阻效应器和磁记忆体
公开(公告)号：US08223533B2
公开(公告)日：2012-07-17
申请号：US12556883
申请日：2009-09-10
申请人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
发明人： Jyunichi Ozeki , Naoharu Shimomura , Sumio Ikegawa , Tadashi Kai , Masahiko Nakayama , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda , Eiji Kitagawa , Masatoshi Yoshikawa
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , G11C11/5607 , H01F10/123 , H01F10/3254 , H01F10/3277 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.
摘要翻译：磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

8. 发明授权

US08208292B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08208292B2
公开(公告)日：2012-06-26
申请号：US13342324
申请日：2012-01-03
申请人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

9. 发明授权

US07633795B2 Magnetoresistive random access memory and its write control method 有权
标题翻译：磁阻随机存取存储器及其写控制方法
公开(公告)号：US07633795B2
公开(公告)日：2009-12-15
申请号：US11533622
申请日：2006-09-20
申请人： Naoharu Shimomura , Tatsuya Kishi , Ryousuke Takizawa
发明人： Naoharu Shimomura , Tatsuya Kishi , Ryousuke Takizawa
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A write control method for a magnetoresistive random access memory, which includes a memory cell having a recording layer with an axis of easy magnetization and an axis of hard magnetization. The write control method includes writing a datum into the memory cell. The writing of the datum includes applying a pulsative first magnetic field substantially parallel to the axis of easy magnetization of the recording layer and a pulsative second magnetic field substantially parallel to the axis of hard magnetization to the recording layer so as to cause a period of the pulsative first magnetic field and a period of the pulsative second magnetic field to overlap each other, and applying a pulsative third magnetic field having substantially the same direction as the pulsative first magnetic field to the recording layer at least once after applying the pulsative first magnetic field to the recording layer.
摘要翻译：一种用于磁阻随机存取存储器的写入控制方法，其包括具有易磁化轴和硬磁化轴的记录层的存储单元。写入控制方法包括将数据写入存储单元。数据的写入包括将基本上平行于记录层易磁化轴的脉动第一磁场和基本上平行于硬磁化轴的脉动第二磁场施加到记录层，从而使得脉动第一磁场和脉动第二磁场的周期彼此重叠，并且在施加脉动第一磁场之后，至少将一个具有与脉动第一磁场基本相同的方向的脉冲第三磁场施加到记录层上至少一次到记录层。

10. 发明申请

US20120099369A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120099369A1
公开(公告)日：2012-04-26
申请号：US13342324
申请日：2012-01-03
申请人： Tadashi KAI , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi KAI , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/02 , H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

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