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1. 发明授权

US5250120A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5250120A
公开(公告)日：1993-10-05
申请号：US802996
申请日：1991-12-05
申请人： Jun Takada , Akihiko Nakajima , Katsuhiko Hayashi , Keizo Asaoka , Yoshihisa Tawada
发明人： Jun Takada , Akihiko Nakajima , Katsuhiko Hayashi , Keizo Asaoka , Yoshihisa Tawada
IPC分类号： H01L31/10 , H01L31/0224 , H01L31/04 , H01L31/075 , H01L31/0376
CPC分类号： H01L31/022425 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： This invention relates to a photovoltaic device, such as a solar cell or a photosensor, which comprises an amorphous silicon semiconductor photosensitive layer and, as disposed on respective sides thereof, a transparent electrode and a rear electrode. The rear electrode is a multi-layer structure constructed by alternately successive depositions, each in a thickness of 0.3 to 50 nm, of two or more metals selected from the group consisting of Cu, Ag, and Au. In using such a Cu/Ag multi-layer structure or an Au/Ag multi-layer structure as the rear electrode, the thickness of each Cu or Au layer is controlled at 0.3 to 20 nm and that of each Ag layer at 1 to 50 nm. The total thickness of the rear electrode is 20 nm to 1 .mu.m. This construction insures improved photoelectric conversion efficiency and improved reliability of the device.
摘要翻译：本发明涉及一种太阳能电池或光电传感器的光电器件，其包括非晶硅半导体感光层，并且在其两侧设置透明电极和后电极。后电极是通过交替连续沉积而构成的多层结构，每个沉积厚度为0.3至50nm，两种或更多种选自Cu，Ag和Au的金属。在使用这种Cu / Ag多层结构或Au / Ag多层结构作为后电极时，每个Cu或Au层的厚度被控制在0.3至20nm，每个Ag层的厚度控制在1至50nm nm。背面电极的总厚度为20nm〜1μm。这种结构确保改善光电转换效率并提高器件的可靠性。

2. 发明授权

US5382787A Photoconductive material 失效
标题翻译：光导材料
公开(公告)号：US5382787A
公开(公告)日：1995-01-17
申请号：US909901
申请日：1992-07-07
申请人： Jun Takada , Akihiko Nakajima , Yoshihisa Tawada
发明人： Jun Takada , Akihiko Nakajima , Yoshihisa Tawada
IPC分类号： H01L31/0264 , H01L31/09 , H01J40/14
CPC分类号： H01L31/0264 , H01L31/09
摘要： The invention provides a temperature switch material capable of detecting a very low temperature not higher than 150 K. It also provides a light switch material for detecting light in the ultraviolet region. It further provides a switch material suited for use as a substrate for thin oxide layer formation thereon. The switching material utilizes an abrupt change in photoelectric current as produced upon phase transition of SrTiO.sub.3 at a low temperature. The photoelectric switch or temperature switch utilizes the change in photoconduction spectrum upon irradiation of SrTiO.sub.3 with light in the 3 eV-5 eV ultraviolet region. A switch is available by varying the intensity of irradiating light thereby controlling the transition temperature.
摘要翻译：本发明提供能够检测不高于150K的非常低的温度的温度开关材料。它还提供用于检测紫外线区域中的光的光开关材料。它进一步提供适合用作其上形成薄氧化物层的衬底的开关材料。开关材料利用SrTiO3在低温下相变时产生的光电流的突然变化。光电开关或温度开关利用3eV-5eV紫外线区域的光照射SrTiO3后的光电导光谱的变化。可以通过改变照射光的强度从而控制转变温度来获得开关。

3. 发明授权

US4926230A Multiple junction solar power generation cells 失效
标题翻译：多结太阳能发电池
公开(公告)号：US4926230A
公开(公告)日：1990-05-15
申请号：US377745
申请日：1989-07-10
申请人： Hideo Yamagishi , Minori Yamaguchi , Keizo Asaoka , Akihiko Hiroe , Masataka Kondo , Kazunori Tsuge , Yoshihisa Tawada
发明人： Hideo Yamagishi , Minori Yamaguchi , Keizo Asaoka , Akihiko Hiroe , Masataka Kondo , Kazunori Tsuge , Yoshihisa Tawada
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/075
CPC分类号： H01L31/076 , H01L31/03762 , Y02E10/548
摘要： A photovoltaic device of amorphous or microcrystalline semiconductor having multijunction wherein one or more layer including high concentration impurities is interposed between p-type conductive layer and n-type conductive layer. A tunnel junction is formed by the interposed layer to elevate the photo-electric conversion rate.
摘要翻译：具有多结的非晶或微晶半导体的光电器件，其中包含高浓度杂质的一层或多层包含在p型导电层和n型导电层之间。由插入层形成隧道结，以提高光电转换速率。

4. 发明授权

US5091764A Semiconductor device having a transparent electrode and amorphous semiconductor layers 失效
标题翻译：具有透明电极和非晶半导体层的半导体器件
公开(公告)号：US5091764A
公开(公告)日：1992-02-25
申请号：US143797
申请日：1989-09-28
申请人： Keizo Asaoka , Kazunori Tsuge , Yoshihisa Tawada
发明人： Keizo Asaoka , Kazunori Tsuge , Yoshihisa Tawada
IPC分类号： H01L31/0224 , H01L31/075 , H01L31/20
CPC分类号： H01L31/076 , H01L31/022466 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A semiconductor device having a transparent electrode comprising SnO.sub.2, at least one semiconductor layer and a back electrode on a glass substrate wherein the dopant density of the transparent electrode is not more than 0.5 weight %, so that light absorption in the transparent electrode is lowered.

5. 发明授权

US4765845A Heat-resistant thin film photoelectric converter 失效
标题翻译：耐热薄膜光电转换器
公开(公告)号：US4765845A
公开(公告)日：1988-08-23
申请号：US942644
申请日：1986-12-17
申请人： Jun Takada , Minori Yamaguchi , Yoshihisa Tawada
发明人： Jun Takada , Minori Yamaguchi , Yoshihisa Tawada
IPC分类号： H01L31/0224 , H01L31/075 , H01L31/06
CPC分类号： H01L31/022425 , H01L31/075 , Y02E10/548
摘要： A heat-resistant thin film photoelectric converter, comprising a semiconductor layer, a front transparent electrode, a rear metal electrode, and a diffusion-blocking layer, said diffusion-blocking layer being provided between the semiconductor layer and the rear metal electrode and being a layer of metal silicide having a thickness of 5 .ANG. to 200 .ANG..The converter of the present invention can avoid the reduction in the efficiency due to the diffusion of metal or metallic compound from the electrode into the semiconductor.
摘要翻译：一种耐热薄膜光电转换器，包括半导体层，前透明电极，后金属电极和扩散阻挡层，所述扩散阻挡层设置在半导体层和后金属电极之间，金属硅化物层，其厚度为5安培至200安培。本发明的转换器可以避免由于金属或金属化合物从电极扩散到半导体中而降低效率。

6. 发明授权

US4907052A Semiconductor tandem solar cells with metal silicide barrier 失效
标题翻译：半导体串联太阳能电池与金属硅化物屏障
公开(公告)号：US4907052A
公开(公告)日：1990-03-06
申请号：US300191
申请日：1989-01-23
申请人： Jun Takada , Minori Yamaguchi , Yoshihisa Tawada
发明人： Jun Takada , Minori Yamaguchi , Yoshihisa Tawada
IPC分类号： H01L31/04 , H01L25/07 , H01L29/868 , H01L31/075 , H01L31/20
CPC分类号： H01L31/076 , H01L25/074 , H01L29/868 , H01L31/202 , H01L2224/32145 , H01L2924/0002 , Y02E10/548 , Y02P70/521
摘要： A heat-resistant multijunction semiconductor device comprising a p-layer, a n-layer and a diffusion-blocking layer, the diffusion-blocking layer being provided between the p-layer and the n-layer. The semiconductor device can reduce the deterioration in quality which is caused by the diffusion of dopant atoms in the p-layer and n-layer, respectively, into the other layer.
摘要翻译：一种包含p层，n层和扩散阻挡层的耐热多结半导体器件，所述扩散阻挡层设置在p层和n层之间。半导体器件可以降低由p层和n层中的掺杂剂原子扩散到另一层而引起的质量劣化。

7. 发明授权

US4665278A Heat-resistant photoelectric converter 失效
标题翻译：耐热光电转换器
公开(公告)号：US4665278A
公开(公告)日：1987-05-12
申请号：US744599
申请日：1985-06-14
申请人： Jun Takada , Minori Yamaguchi , Yoshihisa Tawada
发明人： Jun Takada , Minori Yamaguchi , Yoshihisa Tawada
IPC分类号： H01L31/04 , H01L29/40 , H01L31/0224 , H01L31/075
CPC分类号： H01L31/075 , H01L31/022425 , Y02E10/548
摘要： A heat-resistant thin film photoelectric converter comprising a semiconductor layer, front and back electrodes, and a diffusion-blocking layer, the diffusion-blocking layer being provided between the semiconductor and at least one said electrode, and its preparation. The diffusion-blocking layer is of a metal selected from the Group IVA metals and Group VA metals of the Periodic Table. The converter avoids the reduction in efficiency due to the diffusion of metal or metallic compound from the electrode into the semiconductor.
摘要翻译：一种包含半导体层，前后电极和扩散阻挡层的耐热薄膜光电转换器，所述扩散阻挡层设置在所述半导体与至少一个所述电极之间及其制备。扩散阻挡层是选自元素周期表中的IVA族金属和VA族金属的金属。该转换器避免了由于金属或金属化合物从电极扩散到半导体中的效率的降低。

8. 发明授权

US6035172A Developing roller 失效
标题翻译：开发辊
公开(公告)号：US6035172A
公开(公告)日：2000-03-07
申请号：US171669
申请日：1998-10-23
申请人： Kazuyoshi Mimura , Yoshihisa Tawada , Kenji Kobayashi , Hiroshi Ogoshi , Susumu Fukuda
发明人： Kazuyoshi Mimura , Yoshihisa Tawada , Kenji Kobayashi , Hiroshi Ogoshi , Susumu Fukuda
IPC分类号： G03G15/08
CPC分类号： G03G15/0818 , G03G2215/0861
摘要： Disclosed is a developing roller to be employed in a developing device which is incorporated in electrophotographic apparatus such as printers, duplicators, receivers for facsimiles or the like, and in which toner carried on the surface of the roller being or not being kept in contact with a photoreceptor is transferred at least to the photoreceptor. The developing roller is characterized in that an elastic conductive layer is formed around the conductive shaft of the roller, that the outer surface of the elastic conductive layer is covered with a surface layer, and that the surface layer is formed from a resin composition of which the contact angle with a drop of a liquid consisting essentially of a component similar to the resin component constituting the toner to be used in the developing device is not smaller than 35.degree.. In the developing device, toner filming occurs little around the developing roller, and the initial density of the images formed is good. In addition, toner cracking occurs little in the developing device.
摘要翻译： PCT No.PCT / JP97 / 01481 Sec。 371 1998年10月23日第 102（e）日期1998年10月23日PCT 1997年4月25日PCT公布。公开号WO97 / 41490 日期1997年11月6日公开是用于显影装置中的显影辊，其被并入电子照相设备中，例如打印机，复印机，用于传真机等的接收器，并且其中承载在辊表面上的调色剂是否被与感光体保持接触至少转移到感光体。显影辊的特征在于，在辊的导电轴周围形成弹性导电层，弹性导电层的外表面被表面层覆盖，并且表面层由树脂组合物形成与基本上由构成要用于显影装置中的调色剂的树脂组分相似的组分的液体液滴的接触角不小于35°。在显影装置中，在显影辊周围几乎不发生调色剂成膜，形成的图像的初始密度良好。此外，显影装置中几乎没有发生色粉破裂。

9. 发明授权

US5810705A Developing roller 失效
标题翻译：开发辊
公开(公告)号：US5810705A
公开(公告)日：1998-09-22
申请号：US704349
申请日：1996-08-28
申请人： Kazuyoshi Mimura , Yoshihisa Tawada , Shigeo Akimoto , Kenji Kobayashi , Yasunori Matsunari , Susumu Fukuda
发明人： Kazuyoshi Mimura , Yoshihisa Tawada , Shigeo Akimoto , Kenji Kobayashi , Yasunori Matsunari , Susumu Fukuda
IPC分类号： G03G15/08 , B23P15/00
CPC分类号： G03G15/0818 , G03G2215/0861
摘要： A developing apparatus of a toner delivery system by contacting a developer roller with an electrostatic latent image-carrying member eliminates a protective layer in the conventional concept from a surface of the developing roller, and provides a covering layer which is formed by adhering particles of toner or a material having electrical characteristics and mechanical characteristics equal to those of the toner on the surface of the developing roller. Those particles are adhered utilizing a surface tackiness of an elastomer layer itself which is a structural element of the developing roller.
摘要翻译：通过使显影辊与静电潜像携带部件接触的调色剂传送系统的显影装置从传统概念中消除了显影辊表面的保护层，并且提供了通过粘附墨粉颗粒形成的覆盖层或具有与显影辊表面上的调色剂相同的电特性和机械特性的材料。使用作为显影辊的结构元件的弹性体层本身的表面粘性来粘附这些颗粒。

10. 发明授权

US5128736A Light sensitive semiconductor device 失效
标题翻译：光敏半导体器件
公开(公告)号：US5128736A
公开(公告)日：1992-07-07
申请号：US649294
申请日：1991-01-30
申请人： Eiichi Yoshida , Tomoyoshi Zenki , Satoru Murakami , Minori Yamaguchi , Takehisa Nakayama , Yoshihisa Tawada
发明人： Eiichi Yoshida , Tomoyoshi Zenki , Satoru Murakami , Minori Yamaguchi , Takehisa Nakayama , Yoshihisa Tawada
IPC分类号： H01L31/0248 , H01L27/144 , H01L27/146 , H01L31/0352 , H01L31/12 , H01L31/16
CPC分类号： H01L31/035281 , H01L27/1443 , H01L31/161 , Y02E10/50
摘要： In a light sensitive semiconductor unit having a plurality of light sensitive semiconductor cells connected in series, the light receiving area or size of the light sensitive semiconductor cells is increased as the distance from the center of the unit increases so that every light sensitive semiconductor cell can generate generally equal short circuit current even if the light intensity is decreased as the distance between the light sensitive semiconductor cell and light source increases, whereby a high operating voltage can be obtained.
摘要翻译：在具有串联连接的多个光敏半导体单元的光敏半导体单元中，随着距离单元中心的距离增加，光敏半导体单元的光接收面积或尺寸增加，使得每个光敏半导体单元可以即使当光敏半导体单元和光源之间的距离增加时光强度减小，也产生大致相等的短路电流，从而可以获得高的工作电压。

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