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1. 发明申请

US20100021374A1 PROCESS FOR PRODUCING HIGH-PURITY a-ALUMINA 有权
标题翻译：生产高纯度α-氧化铝的方法
公开(公告)号：US20100021374A1
公开(公告)日：2010-01-28
申请号：US12518169
申请日：2007-12-04
申请人： Jun Mizuno , Toshihiro Matsuba , Shigeo Yamamoto , Takashi Yamada
发明人： Jun Mizuno , Toshihiro Matsuba , Shigeo Yamamoto , Takashi Yamada
IPC分类号： C01F7/02
CPC分类号： C01F7/441 , C01F7/02 , C01F7/444 , C01F7/46 , C01P2006/80
摘要： Provided is a process for producing a high-purity α-alumina in which an Si content, an Fe content, a Ca content, and an Na content are simultaneously removed. The high-purity α-alumina is produced by burning aluminum hydroxide having an Na content of 0.11 mass % or less, an Fe content of 6 ppm or less, a Ca content of 1.5 ppm or less, and an Si content of 10 ppm or less as impurities in terms of alumina respectively, and having an average particle diameter of 55 μm or less at a burning temperature of 1,100 to 1,500° C. by using a burning vessel containing Al2O3 in a range of 85 to 93 wt % and SiO2 in a range of 7 to l4 wt % and subjecting the obtained α-alumina to wash treatment.
摘要翻译：提供一种其中同时除去Si含量，Fe含量，Ca含量和Na含量的高纯度α-氧化铝的方法。高纯度α-氧化铝是通过将Na含量为0.11质量％以下，Fe含量为6ppm以下，Ca含量为1.5ppm以下，Si含量为10ppm的氢氧化铝或较少作为氧化铝的杂质，并且在燃烧温度为1100〜1500℃时的平均粒径为55μm以下，通过使用含有85〜93重量％的Al 2 O 3的燃烧容器和SiO 2 7至14重量％的范围，并对得到的α-氧化铝进行洗涤处理。

2. 发明授权

US08124048B2 Process for producing high-purity α-alumina 有权
标题翻译：生产高纯度α-氧化铝的方法
公开(公告)号：US08124048B2
公开(公告)日：2012-02-28
申请号：US12518169
申请日：2007-12-04
申请人： Jun Mizuno , Toshihiro Matsuba , Shigeo Yamamoto , Takashi Yamada
发明人： Jun Mizuno , Toshihiro Matsuba , Shigeo Yamamoto , Takashi Yamada
IPC分类号： C01F7/02
CPC分类号： C01F7/441 , C01F7/02 , C01F7/444 , C01F7/46 , C01P2006/80
摘要： Provided is a process for producing a high-purity α-alumina in which an Si content, an Fe content, a Ca content, and an Na content are simultaneously removed. The high-purity α-alumina is produced by burning aluminum hydroxide having an Na content of 0.11 mass % or less, an Fe content of 6 ppm or less, a Ca content of 1.5 ppm or less, and an Si content of 10 ppm or less as impurities in terms of alumina respectively, and having an average particle diameter of 55 μm or less at a burning temperature of 1,100 to 1,500° C. by using a burning vessel containing Al2O3 in a range of 85 to 93 wt % and SiO2 in a range of 7 to 14 wt % and subjecting the obtained α-alumina to wash treatment.
摘要翻译：提供一种其中同时除去Si含量，Fe含量，Ca含量和Na含量的高纯度α-氧化铝的方法。高纯度α-氧化铝是通过将Na含量为0.11质量％以下，Fe含量为6ppm以下，Ca含量为1.5ppm以下，Si含量为10ppm的氢氧化铝或较少作为氧化铝中的杂质，并且在1100〜1500℃的燃烧温度下的平均粒径为55μm以下，通过使用含有85〜93重量％的Al 2 O 3的燃烧容器和SiO 2 7〜14重量％的范围，对所得的α-氧化铝进行洗涤处理。

3. 发明授权

US08965146B2 Advanced-format optical modulator with low power consumption and low-loss characteristics 有权
标题翻译：高级格式的光调制器具有低功耗和低损耗特性
公开(公告)号：US08965146B2
公开(公告)日：2015-02-24
申请号：US13381298
申请日：2010-07-09
申请人： Takashi Goh , Yoshiyuki Doi , Shinji Mino , Ken Tsuzuki , Hiroshi Yamazaki , Takashi Yamada
发明人： Takashi Goh , Yoshiyuki Doi , Shinji Mino , Ken Tsuzuki , Hiroshi Yamazaki , Takashi Yamada
IPC分类号： G02F1/035 , G02F1/03 , G02F1/225 , G02B6/12
CPC分类号： G02F1/0327 , G02B2006/12142 , G02B2006/12159 , G02F1/225 , G02F2201/126 , G02F2203/20 , G02F2203/21
摘要： In a nest MZI modulator in which each arm includes a child MZI, the power consumption is reduced. The hybrid integrated-type nest MZI modulator of the embodiment 1a is configured so that, instead of placing a relative phase adjusting section in a parent MZI, a bias electrode Bias 90° in which an electric field is applied in the same direction to the polarization direction in both of the upper and lower arms is placed in each child MZI (see FIG. 4B). The bias electrode Bias 90° provided in each child MZI constitute the entirety of a relative phase adjusting section. The optical signals are subjected to a phase change after the output from the child MZI (see FIG. 1A), because such relative phase adjusting section can subject the optical signals of the upper and lower arms of the child MZI to a shift change in the same direction, respectively.
摘要翻译：在其中每个臂包括儿童MZI的巢MZI调制器中，功耗降低。实施例1a的混合集成型嵌套MZI调制器被配置为使得不是将相对相位调整部分放置在母MZI中，而是将偏置电极偏置90°，其中向与极化相同的方向施加电场将上臂和下臂两者的方向放置在每个子MZI中（参见图4B）。每个子MZI中设置的偏置电极偏置90°构成相对相位调整部的整体。在从子MZI（参见图1A）的输出之后，光信号经受相变，因为这种相对相位调整部分可以使子MZI的上臂和下臂的光信号在相同方向。

4. 发明申请

US20140015496A1 CHARGING DEVICE 审中-公开
标题翻译：充电设备
公开(公告)号：US20140015496A1
公开(公告)日：2014-01-16
申请号：US13933458
申请日：2013-07-02
申请人： Tadao Nishiguchi , Takashi Yamada , Hideyuki Yasugi , Masayuki Hanatani , Yusaku Ido
发明人： Tadao Nishiguchi , Takashi Yamada , Hideyuki Yasugi , Masayuki Hanatani , Yusaku Ido
IPC分类号： H02J7/00
CPC分类号： H02J7/007 , H02J7/022 , H02M1/42 , H02M3/33507 , H02M2001/007 , H02M2001/4291 , Y02B40/90 , Y02B70/12 , Y02B70/126
摘要： A charging device has an AC power supply input part that rectifies an AC voltage, a power factor correction part that converts a rectified voltage outputted from the AC power supply input part into a DC intermediate voltage, a power conversion part that converts the intermediate voltage outputted from the power factor correction part into a charge voltage, and supplies the charge voltage to a secondary battery, an input voltage acquisition unit that acquires the rectified voltage outputted from the AC power supply input part, an output voltage acquisition unit that acquires the charge voltage outputted from the power conversion part, and a storage part in which the rectified voltage, the charge voltage, and a target intermediate voltage correlated with the rectified voltage and charge voltage are stored.
摘要翻译：充电装置具有对交流电压进行整流的交流电源输入部，将从交流电源输入部输出的整流电压转换为直流中间电压的功率因数校正部，转换输出的中间电压的功率转换部从功率因数校正部变为充电电压，并将充电电压提供给二次电池，获取从交流电源输入部输出的整流电压的输入电压获取单元，获取充电电压的输出电压获取单元以及存储与整流电压和充电电压相关的整流电压，充电电压和目标中间电压的存储部。

5. 发明申请

US20130334879A1 VEHICLE POWER-SUPPLY CONTROL DEVICE 有权
标题翻译：车辆电源控制装置
公开(公告)号：US20130334879A1
公开(公告)日：2013-12-19
申请号：US13917089
申请日：2013-06-13
申请人： Yusaku Ido , Takashi Yamada , Tadao Nishiguchi , Hideyuki Yasugi , Masayuki Hanatani
发明人： Yusaku Ido , Takashi Yamada , Tadao Nishiguchi , Hideyuki Yasugi , Masayuki Hanatani
IPC分类号： B60R16/033
CPC分类号： B60R16/033 , B60L1/00 , B60L1/003 , B60L1/14 , B60L11/1805 , B60L11/1816 , B60L11/1824 , B60L11/1868 , B60L2210/10 , B60L2210/30 , Y02T10/7005 , Y02T10/7066 , Y02T10/7072 , Y02T10/7216 , Y02T10/7241 , Y02T10/92 , Y02T90/121 , Y02T90/127 , Y02T90/14
摘要： A vehicle power-supply control device has a battery charger that converts an externally-supplied AC voltage into a DC voltage used to charge a vehicle high-voltage battery, a low-voltage power generator that converts the DC voltage output from the battery charger into a DC voltage used to drive a vehicle auxiliary machine, and a controller that controls the battery charger and the low-voltage power generator. The battery charger includes a power factor correction circuit that corrects a power factor of the AC voltage and a first DC/DC converter that generates a predetermined DC voltage based on an output of the power factor correction circuit. The low-voltage power generator includes a second DC/DC converter that steps down the DC voltage output from the battery charger and a synchronous rectifier that rectifies an output of the second DC/DC converter in synchronization with a switching operation of the second DC/DC converter.
摘要翻译：车辆电源控制装置具有将外部供给的交流电压转换成用于对车辆用高压电池充电的直流电压的电池充电器，将从电池充电器输出的直流电压转换为低压电力的低压发电机用于驱动车辆辅助机器的DC电压，以及控制电池充电器和低压发电机的控制器。电池充电器包括校正AC电压的功率因数的功率因数校正电路和基于功率因数校正电路的输出产生预定DC电压的第一DC / DC转换器。低压发电机包括：第二DC / DC转换器，其降低从电池充电器输出的直流电压;以及同步整流器，其与第二DC / DC转换器的开关操作同步地整流第二DC / DC转换器的输出; DC转换器。

6. 发明授权

US08610291B2 Copper alloy bonding wire for semiconductor device 有权
标题翻译：用于半导体器件的铜合金接合线
公开(公告)号：US08610291B2
公开(公告)日：2013-12-17
申请号：US11848403
申请日：2007-08-31
申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/85 , B23K35/302 , B23K2103/12 , C22C9/00 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/05639 , H01L2224/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45647 , H01L2224/45663 , H01L2224/45687 , H01L2224/45693 , H01L2224/48227 , H01L2224/48247 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/85205 , H01L2224/85439 , H01L2224/85444 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01205 , H01L2924/01206 , H01L2924/10253 , H01L2924/20752 , H01L2924/20755 , H01L2924/20756 , H01L2924/01008 , H01L2924/01004 , H01L2924/01013 , H01L2924/01025 , H01L2924/01039 , H01L2924/00015 , H01L2924/00 , H01L2924/013 , H01L2924/00014 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01055 , H01L2924/00013
摘要： The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.
摘要翻译：本发明提供了一种廉价的材料成本的半导体器件铜合金接合线，确保了优异的球接合形状，线接合特性等，并且具有良好的环形成特性，并且具有优异的批量生产率。半导体装置铜合金接合线含有总共10〜700质量ppm的Mg和P中的至少一种，氧在6〜30质量ppm的范围内。

7. 发明授权

US08389860B2 Bonding wire for semiconductor devices 有权
标题翻译：半导体器件用接合线
公开(公告)号：US08389860B2
公开(公告)日：2013-03-05
申请号：US12669612
申请日：2008-12-03
申请人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
发明人： Tomohiro Uno , Keiichi Kimura , Takashi Yamada
IPC分类号： H01B5/00 , H01B7/18 , H01B9/02
CPC分类号： C22C5/02 , B23K35/0222 , B23K35/302 , C22C5/04 , C22C5/06 , C22C9/00 , C22C9/01 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45683 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48486 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/3025 , H01L2924/01004 , H01L2924/01001 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01202 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20655 , H01L2924/20656 , H01L2924/20658 , H01L2224/48227 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/00014 , H01L2924/0104 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006
摘要： A bonding wire for semiconductor devices includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of orientations in crystalline orientations in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the orientations have an angular difference relative to the wire lengthwise direction. The angular difference is within 15 degrees.
摘要翻译：用于半导体器件的接合线包括由导电金属形成的芯部件和主要由不同于芯部件的面心立方金属形成在其上的表皮层。在皮肤层表面的晶面处的线长度方向上的取向<100 <方向<100>的取向比大于或等于50％，并且<100>取向具有相对的角度差到电线长度方向。角度差在15度以内。

8. 发明申请

US20120307589A1 FLUID MIXER AND APPARATUS USING FLUID MIXER 有权
标题翻译：流体混合器和使用流体混合器的装置
公开(公告)号：US20120307589A1
公开(公告)日：2012-12-06
申请号：US13577381
申请日：2010-12-21
申请人： Toshihiro Hanada , Takashi Yamada
发明人： Toshihiro Hanada , Takashi Yamada
IPC分类号： B01F5/06
CPC分类号： B01F5/0646 , B01F3/0861 , B01F5/0647 , B01F5/0656 , B01F5/0657 , B01F2003/0896
摘要： A fluid mixer includes a main flow path comprised of a first flow path and a second flow path, spiral flow paths formed around the second flow path in shapes substantially concentric with the second flow path and offset in position from each other in a circumferential direction, the spiral flow paths having first ends communicated with the first flow path, branch flow paths branched from a plurality of locations of the second flow path in a flow direction, the branch flow paths being communicated with the spiral flow paths at a plurality of locations of the spiral flow paths in the flow direction, a fluid inlet at an open end of either of the first flow path and the second flow path, and a fluid outlet at an open end of the other of the first flow path and the second flow path.
摘要翻译：流体混合器包括由第一流动路径和第二流动路径构成的主流路，围绕第二流动路径形成的大致与第二流动路径同心的形状和在圆周方向上彼此偏移的形状的螺旋流动路径，所述螺旋流路具有与所述第一流路连通的第一端，在流动方向上从所述第二流路的多个位置分支的分支流路，所述分支流路与所述螺旋流路连通，所述多个位置在流动方向上的螺旋流动路径，在第一流动路径和第二流动路径中的任一个的开口端处的流体入口以及在第一流动路径和第二流动路径中的另一个的开口端处的流体出口。

9. 发明申请

US20120104613A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的接合线
公开(公告)号：US20120104613A1
公开(公告)日：2012-05-03
申请号：US13349155
申请日：2012-01-12
申请人： Tomohiro Uno , Keiichi Kimura , Shinichi Terashima , Takashi Yamada , Akihito Nishibayashi
发明人： Tomohiro Uno , Keiichi Kimura , Shinichi Terashima , Takashi Yamada , Akihito Nishibayashi
IPC分类号： H01L23/532
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43847 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/4568 , H01L2224/45684 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48472 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48724 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78251 , H01L2224/78301 , H01L2224/85045 , H01L2224/85048 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/15747 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/3025 , H01L2924/3861 , H01L2924/01001 , H01L2924/01203 , H01L2924/01034 , H01L2924/01081 , H01L2924/20645 , H01L2924/20652 , H01L2924/20653 , H01L2924/00014 , H01L2924/20108 , H01L2224/45657 , H01L2224/45666 , H01L2924/01008 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2076 , H01L2924/2065 , H01L2924/20651 , H01L2924/20654 , H01L2924/00 , H01L2224/45124 , H01L2924/013 , H01L2924/20751 , H01L2924/2075 , H01L2924/00013 , H01L2924/01049
摘要： It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness.
摘要翻译：本发明的目的是提供一种铜基接合线，其材料成本低，具有优异的球接合性，热循环试验或回流试验的可靠性以及储存寿命，使得能够使用的线材变薄用于细间距连接。接合线包括具有铜作为主要成分的芯材和设置在芯材上并且包含金属M和铜的外层，其中金属M与芯材料在组分和组成中的一种或两种中不同。外层的厚度为0.021〜0.12μm。

10. 发明申请

US20120094121A1 COPPER ALLOY BONDING WIRE FOR SEMICONDUCTOR 有权
标题翻译：铜合金接线用于半导体
公开(公告)号：US20120094121A1
公开(公告)日：2012-04-19
申请号：US13380123
申请日：2010-06-23
申请人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Daizo Oda
发明人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Daizo Oda
IPC分类号： C22C9/08 , B32B15/20
CPC分类号： B23K35/302 , B21C1/003 , B21C37/047 , B23K35/0261 , C22C9/00 , C22F1/08 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/4321 , H01L2224/435 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/4851 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85181 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20755 , Y10T428/2958 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01012
摘要： The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.
摘要翻译：本发明是用于半导体元件的铜基接合线。本发明的接合线可以以廉价的材料成本制造，并且在高湿度/温度环境中具有优异的PCT可靠性。此外，本发明的接合线通过热循环试验表现出良好的TCT可靠性; 有利的压合球形; 有利的楔形粘合性; 良好的循环成形性等。具体地，本发明的接合线是通过拉伸含有0.13〜1.15质量％的Pd，余量由铜和不可避免的杂质构成的铜合金制造的半导体用铜合金接合线。

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