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1. 发明授权

US08685819B2 Method for the realization of a crossbar array of crossed conductive or semi-conductive access lines 失效
标题翻译：用于实现交叉导电或半导电接入线的交叉开关阵列的方法
公开(公告)号：US08685819B2
公开(公告)日：2014-04-01
申请号：US13154726
申请日：2011-06-07
申请人： Julien Buckley , Karim Aissou , Thierry Baron , Gabriel Molas
发明人： Julien Buckley , Karim Aissou , Thierry Baron , Gabriel Molas
IPC分类号： H01L21/8234
CPC分类号： H01L21/0331 , H01L21/0337 , H01L27/101
摘要： A method for making a crossbar array of crossed conductive or semi-conductive access lines on a substrate, the crossbar array including on a crossbar array insulator, in a plane parallel to the substrate, a first level of lines including a plurality of first lines parallel with each other made of a conductive or semi-conductive material; on the first level of lines, a second level of lines including a plurality of second lines parallel with each other made of a conductive or semi-conductive material, the second lines being substantially perpendicular to the first lines. The method includes forming, on the substrate, a first cavity of substantially rectangular shape; forming a second cavity of substantially rectangular shape superimposed to the first cavity, the first and second cavities intersecting each other perpendicularly so as to form a resultant cavity.
摘要翻译：一种用于在衬底上制造交叉导电或半导电接入线的交叉开关阵列的方法，所述交叉开关阵列包括在与所述衬底平行的平面中的交叉开关阵列绝缘体上，所述第一电平线包括多条第一线平行彼此由导电或半导体材料制成; 在第一级线上，包括由导电或半导电材料制成的彼此平行的多条第二线的第二级线，第二线基本上垂直于第一线。该方法包括在基板上形成大致矩形形状的第一空腔; 形成叠加到第一腔体上的基本矩形形状的第二腔体，第一和第二腔体垂直相交，从而形成合成腔体。

2. 发明申请

US20120052598A1 METHOD FOR THE REALIZATION OF A CROSSBAR ARRAY OF CROSSED CONDUCTIVE OR SEMI-CONDUCTIVE ACCESS LINES 失效
标题翻译：用于实现交叉导电或半导体访问线的十字架阵列的方法
公开(公告)号：US20120052598A1
公开(公告)日：2012-03-01
申请号：US13154726
申请日：2011-06-07
申请人： Julien Buckley , Karim Aissou , Thierry Baron , Gabriel Molas
发明人： Julien Buckley , Karim Aissou , Thierry Baron , Gabriel Molas
IPC分类号： H01L21/8246 , H01L21/02
CPC分类号： H01L21/0331 , H01L21/0337 , H01L27/101
摘要： A method for making a crossbar array of crossed conductive or semi-conductive access lines on a substrate, the crossbar array including on a crossbar array insulator, in a plane parallel to the substrate, a first level of lines including a plurality of first lines parallel with each other made of a conductive or semi-conductive material; on the first level of lines, a second level of lines including a plurality of second lines parallel with each other made of a conductive or semi-conductive material, the second lines being substantially perpendicular to the first lines. The method includes forming, on the substrate, a first cavity of substantially rectangular shape; forming a second cavity of substantially rectangular shape superimposed to the first cavity, the first and second cavities intersecting each other perpendicularly so as to form a resultant cavity.
摘要翻译：一种用于在衬底上制造交叉导电或半导电接入线的交叉开关阵列的方法，所述交叉开关阵列包括在与所述衬底平行的平面中的交叉开关阵列绝缘体上，所述第一电平线包括多条第一线平行彼此由导电或半导体材料制成; 在第一级线上，包括由导电或半导电材料制成的彼此平行的多条第二线的第二级线，第二线基本上垂直于第一线。该方法包括在基板上形成大致矩形形状的第一空腔; 形成叠加到第一腔体上的基本矩形形状的第二腔体，第一和第二腔体垂直相交，从而形成合成腔体。

3. 发明授权

US07968398B2 Method for producing a floating gate with an alternation of lines of first and second materials 有权
标题翻译：用于制造具有第一和第二材料的线的交替的浮动栅极的方法
公开(公告)号：US07968398B2
公开(公告)日：2011-06-28
申请号：US12320269
申请日：2009-01-22
申请人： Gabriel Molas , Karim Aissou , Thierry Baron
发明人： Gabriel Molas , Karim Aissou , Thierry Baron
IPC分类号： H01L21/8238
CPC分类号： H01L29/42332 , H01L21/28273 , H01L21/28282 , H01L29/42348 , H01L29/7881 , H01L29/792
摘要： A diblock copolymer layer comprising at least two polymers and having a lamellar structure perpendicularly to a substrate is deposited on a first gate insulator formed on the substrate. One of the polymers of the diblock copolymer layer is then eliminated to form parallel grooves in the copolymer layer. The grooves are filled by a first metallic or semi-conductor material and the rest of the copolymer layer is eliminated. A second dielectric material is deposited to form a second gate insulator. The second gate insulator of the floating gate then comprises an alternation of parallel first and second lines respectively of the first and second materials, the second material encapsulating the lines of the first material.
摘要翻译：包含至少两种聚合物并且具有垂直于衬底的层状结构的二嵌段共聚物层沉积在形成在衬底上的第一栅极绝缘体上。然后消除二嵌段共聚物层的聚合物之一，以在共聚物层中形成平行的沟槽。凹槽由第一金属或半导体材料填充，而其余的共聚物层被去除。沉积第二介电材料以形成第二栅极绝缘体。浮栅的第二栅极绝缘体然后分别包括第一和第二材料的平行的第一和第二线的交替，第二材料封装第一材料的线。

4. 发明申请

US20090203205A1 Method for producing a floating gate with an alternation of lines of first and second materials 有权
标题翻译：用于制造具有第一和第二材料的线的交替的浮动栅极的方法
公开(公告)号：US20090203205A1
公开(公告)日：2009-08-13
申请号：US12320269
申请日：2009-01-22
申请人： Gabriel Molas , Karim Aissou , Thierry Baron
发明人： Gabriel Molas , Karim Aissou , Thierry Baron
IPC分类号： H01L21/28
CPC分类号： H01L29/42332 , H01L21/28273 , H01L21/28282 , H01L29/42348 , H01L29/7881 , H01L29/792
摘要： A diblock copolymer layer comprising at least two polymers and having a lamellar structure perpendicularly to a substrate is deposited on a first gate insulator formed on the substrate. One of the polymers of the diblock copolymer layer is then eliminated to form parallel grooves in the copolymer layer. The grooves are filled by a first metallic or semi-conductor material and the rest of the copolymer layer is eliminated. A second dielectric material is deposited to form a second gate insulator. The second gate insulator of the floating gate then comprises an alternation of parallel first and second lines respectively of the first and second materials, the second material encapsulating the lines of the first material.
摘要翻译：包含至少两种聚合物并且具有垂直于衬底的层状结构的二嵌段共聚物层沉积在形成在衬底上的第一栅极绝缘体上。然后消除二嵌段共聚物层的聚合物之一，以在共聚物层中形成平行的沟槽。凹槽由第一金属或半导体材料填充，而其余的共聚物层被去除。沉积第二介电材料以形成第二栅极绝缘体。浮栅的第二栅极绝缘体然后分别包括第一和第二材料的平行的第一和第二线的交替，第二材料封装第一材料的线。

5. 发明授权

US09377684B2 Thin films organized in nanodomains on the basis of copolymers having polysaccharide blocks for applications in nanotechnology 有权
标题翻译：基于具有用于纳米技术的多糖嵌段的共聚物在纳米域中组织的薄膜
公开(公告)号：US09377684B2
公开(公告)日：2016-06-28
申请号：US13812904
申请日：2011-07-29
申请人： Karim Aissou , Sami Halila , Sebastien Fort , Redouane Borsali , Thierry Baron
发明人： Karim Aissou , Sami Halila , Sebastien Fort , Redouane Borsali , Thierry Baron
IPC分类号： G03F7/004 , G03F7/40 , B82Y30/00 , C08G81/02 , C09D187/00 , H01L29/423 , H01L29/788 , C09D105/00 , C09D153/00 , G03F1/00
CPC分类号： G03F7/004 , B82Y30/00 , C08G81/02 , C09D105/00 , C09D153/00 , C09D187/005 , G03F1/00 , G03F7/40 , H01L29/42332 , H01L29/7881 , Y10T428/31645 , Y10T428/31667 , Y10T428/31692 , Y10T428/31971
摘要： A material (M) includes a substrate one of the surfaces of which is covered with a layer based on a block copolymer having a block (B) consisting of a polysaccharide and to its uses for electronics, in order to prepare organic electroluminescent diodes (OLEDs) or organic photovoltaic cells (OPV) or for designing detection devices (nanobiosensors, biochips).
摘要翻译：材料（M）包括其表面被基材嵌段共聚物覆盖的基材，所述嵌段共聚物具有由多糖组成的嵌段（B）及其用于电子学的用途，以制备有机电致发光二极管）或有机光伏电池（OPV）或用于设计检测装置（纳米生物传感器，生物芯片）。

6. 发明申请

US20130189609A1 THIN FILMS ORGANIZED IN NANODOMAINS ON THE BASIS OF COPOLYMERS HAVING POLYSACCHARIDE BLOCKS FOR APPLICATIONS IN NANOTECHNOLOGY 有权
标题翻译：基于具有多糖嵌段共聚物的纳米粒子的薄膜在纳米技术中的应用
公开(公告)号：US20130189609A1
公开(公告)日：2013-07-25
申请号：US13812904
申请日：2011-07-29
申请人： Karim Aissou , Sami Halila , Sébastien Fort , Redouane Borsali , Thierry Baron
发明人： Karim Aissou , Sami Halila , Sébastien Fort , Redouane Borsali , Thierry Baron
IPC分类号： C09D153/00 , G03F1/00 , C09D105/00
CPC分类号： G03F7/004 , B82Y30/00 , C08G81/02 , C09D105/00 , C09D153/00 , C09D187/005 , G03F1/00 , G03F7/40 , H01L29/42332 , H01L29/7881 , Y10T428/31645 , Y10T428/31667 , Y10T428/31692 , Y10T428/31971
摘要： A material (M) includes a substrate one of the surfaces of which is covered with a layer based on a block copolymer having a block (B) consisting of a polysaccharide and to its uses for electronics, in order to prepare organic electroluminescent diodes (OLEDs) or organic photovoltaic cells (OPV) or for designing detection devices (nanobiosensors, biochips).
摘要翻译：材料（M）包括其表面被基材嵌段共聚物覆盖的基材，所述嵌段共聚物具有由多糖组成的嵌段（B）及其用于电子学的用途，以制备有机电致发光二极管）或有机光伏电池（OPV）或用于设计检测装置（纳米生物传感器，生物芯片）。

7. 发明申请

US20150140267A1 SURFACE PREPARATION METHOD 审中-公开
标题翻译：表面处理方法
公开(公告)号：US20150140267A1
公开(公告)日：2015-05-21
申请号：US14402957
申请日：2013-05-23
申请人： Christophe Navarro , Karim Aissou , Cyril Brochon , Stefan Dilhaire , Guillaume Fleury , Stephane Grauby , Georges Hadziioannou , Jean-Michel Rampnoux , Jonah Shaver
发明人： Christophe Navarro , Karim Aissou , Cyril Brochon , Stefan Dilhaire , Guillaume Fleury , Stephane Grauby , Georges Hadziioannou , Jean-Michel Rampnoux , Jonah Shaver
IPC分类号： G03F7/20 , G03F7/038 , G03F7/16
CPC分类号： G03F7/20 , B81C1/00031 , B81C2201/0149 , B82Y40/00 , G03F7/0002 , G03F7/001 , G03F7/0388 , G03F7/168 , Y10T428/24355 , Y10T428/24612
摘要： The invention relates to a process for the preparation, by spatial distribution of light intensity, of a surface in relief promoting order and spatial coherence serving as a guide for the organization, on nano- and micrometre scales, of an overlayer on the surface in particular of block copolymers.
摘要翻译：本发明涉及一种通过光强度的空间分布制备浮雕促进顺序的表面的空间分布和空间相干性的方法，用于在纳米和微米尺度上组织表面上的覆盖物的指导的嵌段共聚物。

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