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1. 发明授权

US5914180A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US5914180A
公开(公告)日：1999-06-22
申请号：US531703
申请日：1995-09-21
申请人： Jota Ito , Takashi Chiba , Kenichi Sato , Hidetoshi Honda , Toshiharu Uchimi , Taketoshi Sato , Yukihiro Koshika , Yasumi Sato
发明人： Jota Ito , Takashi Chiba , Kenichi Sato , Hidetoshi Honda , Toshiharu Uchimi , Taketoshi Sato , Yukihiro Koshika , Yasumi Sato
IPC分类号： G11B5/66 , G11B5/64 , G11B5/65 , G11B5/72 , G11B5/85
CPC分类号： G11B5/656 , G11B5/64 , G11B5/72 , G11B5/85 , Y10S438/90
摘要： A magnetic recording medium having a thin magnetic metal film formed by vapor deposition under an atmosphere of an introduced oxygen gas. The thickness of the surface oxide film having the degree of oxidation of 50% or higher is maintained so as to be not higher than 5% of the total film thickness of the thin magnetic metal film. The magnetic recording medium is affected to a lesser extent by the surface oxide layer such that it is superior in magnetic properties, such as coercivity, and in electromagnetic properties.
摘要翻译：一种磁记录介质，其具有在引入的氧气气氛下通过气相沉积形成的薄磁性金属膜。氧化度为50％以上的表面氧化膜的厚度保持不低于薄磁性金属膜的总膜厚的5％。磁记录介质在较小程度上受到表面氧化物层的影响，使得磁性能如矫顽力和电磁特性都优异。

2. 发明授权

US5662984A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US5662984A
公开(公告)日：1997-09-02
申请号：US250432
申请日：1994-05-27
申请人： Hidetoshi Honda , Yasumi Sato , Taketoshi Sato , Jota Ito , Yoshihito Ebine , Toshikazu Sasaki
发明人： Hidetoshi Honda , Yasumi Sato , Taketoshi Sato , Jota Ito , Yoshihito Ebine , Toshikazu Sasaki
IPC分类号： G11B5/72 , G11B5/73 , G11B5/733 , G11B5/84 , G11B5/66 , B32B3/10 , B32B5/16 , B32B9/00
CPC分类号： G11B5/8408 , G11B5/72 , Y10S428/90 , Y10T428/24355 , Y10T428/265 , Y10T428/30
摘要： A magnetic recording medium has a magnetic layer formed by a thin magnetic metal layer and a carbon protective layer on a non-magnetic substrate; the surface of the carbon protective layer has first protrusions formed by first particles and second protrusions formed by second particles; the carbon protective film has a thickness in the range of 3 nm to 30 nm, while the first protrusions have the heights of 65 nm.+-.15 nm to 95 nm.+-.15 nm and the second protrusions have the heights of 18 nm.+-.5 nm to 28 nm.+-.5 nm; since the surface properties of the carbon protective film are controlled, the electro-magnetic conversion characteristics may be prevented from being lowered due to the spacing losses for improving the running durability of the recording medium.
摘要翻译：磁记录介质具有由非磁性基板上的薄磁性金属层和碳保护层形成的磁性层; 碳保护层的表面具有由第一颗粒形成的第一突起和由第二颗粒形成的第二突起; 碳保护膜的厚度在3nm至30nm的范围内，而第一突起的高度为65nm +/- 15nm至95nm +/- 15nm，第二突起的高度为18nm +/- 5nm至28nm +/- 5nm; 由于控制了碳保护膜的表面特性，因此为了提高记录介质的行驶耐久性而能够防止因间隔损失而降低电磁转换特性。

3. 发明授权

US08047158B2 Substrate processing apparatus and reaction container 有权
公开(公告)号：US08047158B2
公开(公告)日：2011-11-01
申请号：US11933169
申请日：2007-10-31
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/509 , C23C16/505 , C23C16/503 , C23C16/50 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

4. 发明授权

US07900580B2 Substrate processing apparatus and reaction container 有权
标题翻译：基材加工设备和反应容器
公开(公告)号：US07900580B2
公开(公告)日：2011-03-08
申请号：US11933208
申请日：2007-10-31
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
摘要翻译：基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室，缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

5. 发明申请

US20090205568A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20090205568A1
公开(公告)日：2009-08-20
申请号：US12429031
申请日：2009-04-23
申请人： Norikazu MIZUNO , Taketoshi Sato , Masanori Sakai , Kazuyuki Okuda
发明人： Norikazu MIZUNO , Taketoshi Sato , Masanori Sakai , Kazuyuki Okuda
IPC分类号： B05C11/00
CPC分类号： C23C16/45546 , C23C16/345 , C23C16/50 , H01L21/0217 , H01L21/0228 , H01L21/3141
摘要： A substrate processing method by which a desired thin film is formed on a substrate by alternately supplying and discharging a plurality of processing gases to and from a process chamber having a space for processing the substrate. In the substrate processing method, a quantity of a chemical species, which exists in the thin film and the film stress of the thin film depends on, is controlled by controlling a supply time of one processing gas among the processing gases, and thus the film stress of the thin film is controlled.
摘要翻译：一种基板处理方法，其中通过向具有用于处理基板的处理空间的处理室交换和排出多个处理气体而在基板上形成期望的薄膜。在基板处理方法中，通过控制处理气体中的一种处理气体的供给时间来控制存在于薄膜中的化学物质的量和薄膜的膜应力依赖于该膜，因此膜控制薄膜的应力。

6. 发明授权

US07214436B2 Magnetic recording medium and process for producing same 失效
标题翻译：磁记录介质及其制造方法
公开(公告)号：US07214436B2
公开(公告)日：2007-05-08
申请号：US10439196
申请日：2003-05-15
申请人： Ryoichi Hiratsuka , Tomoe Ozaki , Taketoshi Sato , Miho Abiko , Ichiro Kanagawa , Kasumi Suzuki
发明人： Ryoichi Hiratsuka , Tomoe Ozaki , Taketoshi Sato , Miho Abiko , Ichiro Kanagawa , Kasumi Suzuki
IPC分类号： G11B5/66
CPC分类号： G11B5/72 , G11B5/8408
摘要： A magnetic recording medium of a metal thin-film type, which includes a magnetic layer and a carbon protective layer on a non-magnetic support member, and in which a non-magnetic metal thin-film is provided between the magnetic layer and the carbon protective layer, is provided. The magnetic recording medium thus produced can be run stably.
摘要翻译：一种金属薄膜型的磁记录介质，其在非磁性支撑构件上包括磁性层和碳保护层，并且其中在磁性层和碳之间提供非磁性金属薄膜提供保护层。这样制造的磁记录媒体可以稳定地运行。

7. 发明授权

US06337796B2 Semiconductor device mount structure having heat dissipating member for dissipating heat generated from semiconductor device 有权
标题翻译：具有用于散发由半导体器件产生的热的散热构件的半导体器件安装结构
公开(公告)号：US06337796B2
公开(公告)日：2002-01-08
申请号：US09852701
申请日：2001-05-11
申请人： Masao Yamada , Shinichi Konda , Taketoshi Sato
发明人： Masao Yamada , Shinichi Konda , Taketoshi Sato
IPC分类号： H05K720
CPC分类号： H01L23/433 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device mount structure includes a heat dissipating member, a circuit board, a semiconductor device and a leaf spring member. The heat dissipating member has a mounting surface. The circuit board is opposed to the mounting surface of the heat dissipating member. The semiconductor device is mounted to the mounting surface of the heat dissipating member. The semiconductor device is electrically connected to the circuit board. The leaf spring member is arranged between the semiconductor device and the circuit board in such a manner that the leaf spring member biases the semiconductor device against the mounting surface of the heat dissipating member. The leaf spring member has a heat insulating material integrated on one side thereof which faces the circuit board.
摘要翻译：半导体器件安装结构包括散热构件，电路板，半导体器件和板簧构件。散热构件具有安装面。电路板与散热构件的安装面相对。半导体器件安装到散热构件的安装表面。半导体器件电连接到电路板。板簧构件以这样的方式设置在半导体器件和电路板之间，使得板簧构件将半导体器件偏压抵靠散热构件的安装表面。板簧构件具有与其一侧面对电路板的隔热材料。

8. 发明授权

US6011676A Tape cassette for magnetic recording 失效
标题翻译：磁带录音磁带
公开(公告)号：US6011676A
公开(公告)日：2000-01-04
申请号：US994651
申请日：1997-12-19
申请人： Taketoshi Sato
发明人： Taketoshi Sato
IPC分类号： G11B23/04 , G11B23/087 , G11B23/08
CPC分类号： G11B23/08735
摘要： For preventing deterioration of magnetic characteristics of a magnetic tape in a tape cassette for magnetic recording and to maintain a stable traveling property of the magnetic tape the amount of a fatty acid contained in a lid portion (103) made of resin of a tape cassette (100) for magnetic recording is limited to a range from 1 to 100 ppm.
摘要翻译：为了防止用于磁记录的磁带盒中的磁带的磁特性的劣化并且保持磁带的稳定行进性能，包含在由磁带盒的树脂制成的盖部分（103）中的脂肪酸的量（ 100）限制在1至100ppm的范围内。

9. 发明申请

US20120073500A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：半导体器件制造方法和基板处理装置
公开(公告)号：US20120073500A1
公开(公告)日：2012-03-29
申请号：US13311760
申请日：2011-12-06
申请人： Taketoshi Sato , Masayuki Tsuneda
发明人： Taketoshi Sato , Masayuki Tsuneda
IPC分类号： H01L21/00 , C23C16/52 , C23C16/455
CPC分类号： C23C16/34 , C23C16/45534 , C23C16/45546 , C23C16/45557 , C23C16/45561 , H01L21/28562 , H01L21/76843
摘要： Provided is a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.
摘要翻译：提供一种半导体器件制造方法和基板处理装置。该方法包括：通过将含有预定元素的源气体供应到其中容纳基板的基板处理室来在基板上形成含有预定元素的膜的第一工艺; 通过向基板处理室供给惰性气体来除去残留在基板处理室中的原料气体的第二工序; 通过将与所述预定元素反应的改性气体供给到所述基板处理室来修饰在所述第一工序中形成的所述规定的含有成膜的膜的第三工序; 通过向所述基板处理室供给惰性气体来除去残留在所述基板处理室中的所述改性气体的第四工序; 以及在连接到基板处理室的气罐中填充惰性气体的填充过程。

10. 发明授权

US08093158B2 Semiconductor device manufacturing method and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法和基板处理装置
公开(公告)号：US08093158B2
公开(公告)日：2012-01-10
申请号：US12750105
申请日：2010-03-30
申请人： Taketoshi Sato , Masayuki Tsuneda
发明人： Taketoshi Sato , Masayuki Tsuneda
IPC分类号： H01L21/30
CPC分类号： C23C16/34 , C23C16/45534 , C23C16/45546 , C23C16/45557 , C23C16/45561 , H01L21/28562 , H01L21/76843
摘要： Provided are a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.
摘要翻译：提供半导体器件制造方法和基板处理装置。该方法包括：通过将含有预定元素的源气体供应到其中容纳基板的基板处理室来在基板上形成含有预定元素的膜的第一工艺; 通过向基板处理室供给惰性气体来除去残留在基板处理室中的原料气体的第二工序; 通过将与所述预定元素反应的改性气体供给到所述基板处理室来修饰在所述第一工序中形成的所述规定的含有成膜的膜的第三工序; 通过向所述基板处理室供给惰性气体来除去残留在所述基板处理室中的所述改性气体的第四工序; 以及在连接到基板处理室的气罐中填充惰性气体的填充过程。

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