专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110065283A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：半导体器件制造方法和基板处理装置
公开(公告)号：US20110065283A1
公开(公告)日：2011-03-17
申请号：US12750105
申请日：2010-03-30
申请人： Taketoshi SATO , Masayuki TSUNEDA
发明人： Taketoshi SATO , Masayuki TSUNEDA
IPC分类号： H01L21/30 , B05C9/00
CPC分类号： C23C16/34 , C23C16/45534 , C23C16/45546 , C23C16/45557 , C23C16/45561 , H01L21/28562 , H01L21/76843
摘要： Provided are a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.
摘要翻译：提供半导体器件制造方法和基板处理装置。该方法包括：通过将含有预定元素的源气体供应到其中容纳基板的基板处理室来在基板上形成含有预定元素的膜的第一工艺; 通过向基板处理室供给惰性气体来除去残留在基板处理室中的原料气体的第二工序; 通过将与所述预定元素反应的改性气体供给到所述基板处理室来修饰在所述第一工序中形成的所述规定的含有成膜的膜的第三工序; 通过向所述基板处理室供给惰性气体来除去残留在所述基板处理室中的所述改性气体的第四工序; 以及在连接到基板处理室的气罐中填充惰性气体的填充过程。

2. 发明申请

US20090130331A1 Method of Forming Thin Film and Method of Manufacturing Semiconductor Device 审中-公开
标题翻译：形成薄膜的方法和制造半导体器件的方法
公开(公告)号：US20090130331A1
公开(公告)日：2009-05-21
申请号：US11920720
申请日：2006-08-10
申请人： Masayuki Asai , Masayuki Tsuneda , Shinya Sasaki
发明人： Masayuki Asai , Masayuki Tsuneda , Shinya Sasaki
IPC分类号： B05D5/12
CPC分类号： C23C16/34 , C23C16/56 , H01L21/28562 , H01L21/76856 , H01L21/76862
摘要： A thin film is deposited on a substrate to be processed by continuously performing: forming an amorphous thin film composed of Ti, N, C, and H as principal components; oxidizing a surface of the thin film; removing C and H, which are impurities in the thin film, by a plasma treatment, and increasing the density of the thin film; and removing a TiO thin film from a surface of the thin film.
摘要翻译：通过连续地进行处理的基板上沉积薄膜：以Ti，N，C和H为主成分的非晶薄膜形成; 氧化薄膜的表面; 通过等离子体处理去除作为薄膜中的杂质的C和H，并提高薄膜的密度; 以及从薄膜的表面除去TiO薄膜。

3. 发明授权

US06682971B2 Method of manufacturing a semiconductor 失效
标题翻译：制造半导体的方法
公开(公告)号：US06682971B2
公开(公告)日：2004-01-27
申请号：US09820194
申请日：2001-03-29
申请人： Masayuki Tsuneda , Hideharu Itatani
发明人： Masayuki Tsuneda , Hideharu Itatani
IPC分类号： H01L218242
CPC分类号： C23C16/45512 , C23C16/18 , H01L21/28556 , H01L21/28568
摘要： A semiconductor manufacturing method and a semiconductor manufacturing apparatus capable of manufacturing semiconductor devices without the need of specifically determining an optimal configuration of a gas mixing chamber (6) with care or elaboration. A ruthenium raw gas feed pipe (4) and an oxygen-containing gas feed pipe (5) are merged with each other at a location upstream of a gas mixing chamber (6), so that the ruthenium raw gas and the gas containing oxygen atoms (e.g., oxygen (O2), ozone (O3), etc.) are mixed with each other prior to entering the gas mixing chamber (6).
摘要翻译：一种半导体制造方法和半导体制造装置，其能够制造半导体器件，而不需要特别确定气体混合室（6）的最佳构造。钌原料气体供给管（4）和含氧气体供给管（5）在气体混合室（6）的上游位置处彼此合并，使得钌原料气体和含有氧原子的气体（例如，氧气（O 2），臭氧（O 3）等）在进入气体混合室（6）之前彼此混合。

4. 发明授权

US06548404B2 Method and apparatus for manufacturing semiconductor devices 有权
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US06548404B2
公开(公告)日：2003-04-15
申请号：US09819653
申请日：2001-03-29
申请人： Hideharu Itatani , Masayuki Tsuneda
发明人： Hideharu Itatani , Masayuki Tsuneda
IPC分类号： H01L2144
CPC分类号： H01L28/75 , C23C16/18 , C23C16/40 , H01L21/28556
摘要： A semiconductor manufacturing method and apparatus having an excellent step coverage and capable of manufacturing semiconductor devices at low cost. The apparatus includes a reaction chamber 4 adapted to accommodate a substrate 1, a gas feed port through which a raw material gas is supplied to the reaction chamber for forming ruthenium films or ruthenium oxide films on the substrate, and a gas exhaust port through which the raw material gas is exhausted from the reaction chamber. The raw material gas is directed from the gas feed port toward the substrate to initially form thereon a first ruthenium film or a first ruthenium oxide film by means of a thermal CVD method under first film-forming conditions, and subsquently to form a second ruthenium film or a second ruthenium oxide film on an underlayer of the first ruthenium film or the first ruthenium oxide film by means of the thermal CVD method under second film-forming conditions different from the first film-forming conditions, the second ruthenium film or the second ruthenium oxide film having a thickness greater than that of the first ruthenium film or the first ruthenium oxide film.
摘要翻译：一种半导体制造方法和装置，其具有优异的台阶覆盖率并且能够以低成本制造半导体器件。该装置包括：反应室4，其适于容纳基板1，气体供给口，原料气体通过该气体供给口供应到用于在基板上形成钌膜或氧化钌膜的反应室;以及排气口，原料气体从反应室排出。原料气体从气体供给口向基板引导，在第一成膜条件下通过热CVD法在其上初始形成第一钌膜或第一氧化钌膜，并且成为第二钌膜或者在与第一成膜条件不同的第二成膜条件下，通过热CVD法在第一钌膜或第一钌氧化物膜的底层上形成第二氧化钌膜，第二钌膜或第二钌氧化膜的厚度大于第一钌膜或第一氧化钌膜的厚度。

5. 发明申请

US20120073500A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：半导体器件制造方法和基板处理装置
公开(公告)号：US20120073500A1
公开(公告)日：2012-03-29
申请号：US13311760
申请日：2011-12-06
申请人： Taketoshi Sato , Masayuki Tsuneda
发明人： Taketoshi Sato , Masayuki Tsuneda
IPC分类号： H01L21/00 , C23C16/52 , C23C16/455
CPC分类号： C23C16/34 , C23C16/45534 , C23C16/45546 , C23C16/45557 , C23C16/45561 , H01L21/28562 , H01L21/76843
摘要： Provided is a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.
摘要翻译：提供一种半导体器件制造方法和基板处理装置。该方法包括：通过将含有预定元素的源气体供应到其中容纳基板的基板处理室来在基板上形成含有预定元素的膜的第一工艺; 通过向基板处理室供给惰性气体来除去残留在基板处理室中的原料气体的第二工序; 通过将与所述预定元素反应的改性气体供给到所述基板处理室来修饰在所述第一工序中形成的所述规定的含有成膜的膜的第三工序; 通过向所述基板处理室供给惰性气体来除去残留在所述基板处理室中的所述改性气体的第四工序; 以及在连接到基板处理室的气罐中填充惰性气体的填充过程。

6. 发明授权

US08093158B2 Semiconductor device manufacturing method and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法和基板处理装置
公开(公告)号：US08093158B2
公开(公告)日：2012-01-10
申请号：US12750105
申请日：2010-03-30
申请人： Taketoshi Sato , Masayuki Tsuneda
发明人： Taketoshi Sato , Masayuki Tsuneda
IPC分类号： H01L21/30
CPC分类号： C23C16/34 , C23C16/45534 , C23C16/45546 , C23C16/45557 , C23C16/45561 , H01L21/28562 , H01L21/76843
摘要： Provided are a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.
摘要翻译：提供半导体器件制造方法和基板处理装置。该方法包括：通过将含有预定元素的源气体供应到其中容纳基板的基板处理室来在基板上形成含有预定元素的膜的第一工艺; 通过向基板处理室供给惰性气体来除去残留在基板处理室中的原料气体的第二工序; 通过将与所述预定元素反应的改性气体供给到所述基板处理室来修饰在所述第一工序中形成的所述规定的含有成膜的膜的第三工序; 通过向所述基板处理室供给惰性气体来除去残留在所述基板处理室中的所述改性气体的第四工序; 以及在连接到基板处理室的气罐中填充惰性气体的填充过程。

7. 发明授权

US06764916B1 Manufacturing method for semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06764916B1
公开(公告)日：2004-07-20
申请号：US09408327
申请日：1999-09-29
申请人： Ryoichi Furukawa , Tadanori Yoshida , Masayuki Tsuneda , Yasuhiro Inokuchi , Satoru Tagami
发明人： Ryoichi Furukawa , Tadanori Yoshida , Masayuki Tsuneda , Yasuhiro Inokuchi , Satoru Tagami
IPC分类号： H01L218242
CPC分类号： H01L21/31637 , C23C16/405 , H01L27/10811 , H01L28/84
摘要： A manufacturing method for a semiconductor device, including forming on or above a semiconductor substrate a silicon film a surface of which has a first polycrystalline silicon film with mushroom or hemisphere-shaped crystal grains, and forming a Ta2O5 film on the silicon film at a pressure of 40 Pa or lower and at a temperature of 480° C. or lower, using a gas obtained by vaporizing Ta(OC2H5)5 as a tantalum source gas.
摘要翻译：一种半导体器件的制造方法，其特征在于，在半导体基板的上方或上方形成有表面具有带有蘑菇状或半球状的晶粒的第一多晶硅膜的硅膜，在所述硅膜上形成Ta2O5膜的压力使用通过蒸发Ta（OC2H5）5作为钽源气体获得的气体，在40Pa以下且在480℃以下的温度下进行。

8. 发明授权

US4951574A Conveyor system using automotive cart 失效
标题翻译：输送机系统采用汽车推车
公开(公告)号：US4951574A
公开(公告)日：1990-08-28
申请号：US375188
申请日：1989-07-03
申请人： Masayuki Tsuneda
发明人： Masayuki Tsuneda
IPC分类号： B61L23/00
CPC分类号： B61L23/005
摘要： A conveyor system comprises a conveyor rail and an automotive cart which travels along the conveyor rail. The automotive cart obtains power for travel from power supply rails installed in the conveyor rail. The automotive cart has a first signal receiving member for stop signal and a first signal transmitting member for automotive cart signal. The rail has a second signal transmitting member for the stop signal and a second signal receiving member for the automotive cart signal located at suitable positions on the rail. The automotive cart transmits and receives control signals for its travel by means of their signal transmitting members and signal receiving members. The first signal receiving member on the automotive cart is a magnetic sensor, while the second signal transmitting member comprises an electromagnet. The electromagnet includes magnetic pole plates having along the conveyor rail a length which is almost the same as or longer than the brake distance of the automotive cart.
摘要翻译：传送系统包括传送轨道和沿传送轨道行进的汽车车辆。汽车推车从运输轨道上安装的电源轨获得行驶电力。汽车车具有用于停止信号的第一信号接收构件和用于汽车车载信号的第一信号传递构件。轨道具有用于停止信号的第二信号传输构件和位于轨道上适当位置的用于汽车车辆信号的第二信号接收构件。汽车车载装置通过其信号传输部件和信号接收部件发送和接收其行进控制信号。汽车车上的第一信号接收部件是磁传感器，而第二信号传输部件包括电磁体。电磁体包括磁极板，其具有沿着传送轨道的长度，其大致与汽车车辆的制动距离相同或更长。

9. 发明授权

US08590484B2 Semiconductor device manufacturing method and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法和基板处理装置
公开(公告)号：US08590484B2
公开(公告)日：2013-11-26
申请号：US13311760
申请日：2011-12-06
申请人： Taketoshi Sato , Masayuki Tsuneda
发明人： Taketoshi Sato , Masayuki Tsuneda
IPC分类号： C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/34 , C23C16/45534 , C23C16/45546 , C23C16/45557 , C23C16/45561 , H01L21/28562 , H01L21/76843
摘要： Provided is a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.
摘要翻译：提供一种半导体器件制造方法和基板处理装置。该方法包括：通过将含有预定元素的源气体供应到其中容纳基板的基板处理室来在基板上形成含有预定元素的膜的第一工艺; 通过向基板处理室供给惰性气体来除去残留在基板处理室中的原料气体的第二工序; 通过将与所述预定元素反应的改性气体供给到所述基板处理室来修饰在所述第一工序中形成的所述规定的含有成膜的膜的第三工序; 通过向所述基板处理室供给惰性气体来除去残留在所述基板处理室中的所述改性气体的第四工序; 以及在连接到基板处理室的气罐中填充惰性气体的填充过程。

10. 发明申请

US20090253269A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体制造设备和半导体器件制造方法
公开(公告)号：US20090253269A1
公开(公告)日：2009-10-08
申请号：US12410793
申请日：2009-03-25
申请人： Masayuki Tsuneda
发明人： Masayuki Tsuneda
IPC分类号： H01L21/465 , C23C16/46
CPC分类号： C23C16/45546 , C23C16/34 , C23C16/4412 , H01L21/28562 , H01L21/76841 , H01L21/76861
摘要： A semiconductor manufacturing apparatus comprises: a substrate process chamber accommodating a substrate; a member heating the substrate, wherein the semiconductor manufacturing apparatus is a substrate processing apparatus for forming a film on the substrate by alternately supplying at least two process gases that react with each other to the substrate process chamber; gas supply units configured to supply the process gases independently; a cleaning gas supply source containing a cleaning gas for supplying the cleaning gas through the gas supply units; an exhaust control unit exhausting gas from the substrate process chamber through an exhaust pipe; an exhaust pipe heating unit heating the exhaust pipe; and a control unit controlling the exhaust pipe heating unit to keep the exhaust pipe higher than a predetermined temperature while a cleaning gas is exhausted from the substrate process chamber through the exhaust pipe by the exhaust control unit after the substrate is processed.
摘要翻译：半导体制造装置包括：容纳基板的基板处理室; 加热所述基板的部件，其中，所述半导体制造装置是通过交替地向所述基板处理室交替地供给彼此反应的至少两种处理气体而在所述基板上形成膜的基板处理装置; 气体供应单元被配置为独立地供应工艺气体; 清洁气体供应源，其包含用于通过气体供应单元供应清洁气体的清洁气体; 排气控制单元，其通过排气管排出来自基板处理室的气体; 排气管加热单元加热排气管; 以及控制单元，其控制所述排气管加热单元，以在所述基板被处理之后，通过所述排气控制单元通过所述排气管从所述基板处理室排出清洁气体，以将所述排气管保持在高于预定温度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式