专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090166753A1 Semiconductor Device and Method of Manufacturing Such a Device 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090166753A1
公开(公告)日：2009-07-02
申请号：US12304506
申请日：2007-06-12
申请人： Erwin Hijzen , Joost Melai , Wibo D. Van Noort , Johannes J.T.M Donkers , Philippe Meunier-Beillard , Andreas M. Piontek , Li Jen Choi , Stefaan Van Huylenbroeck
发明人： Erwin Hijzen , Joost Melai , Wibo D. Van Noort , Johannes J.T.M Donkers , Philippe Meunier-Beillard , Andreas M. Piontek , Li Jen Choi , Stefaan Van Huylenbroeck
IPC分类号： H01L27/06 , H01L21/8249
CPC分类号： H01L27/0623 , H01L21/8249 , H01L29/456 , H01L29/66242 , H01L29/7378
摘要： The invention relates to a semiconductor device (10) with a substrate (11) and a semiconductor body (1) comprising a bipolar transistor with in that order a collector region (2), a base region (3), and an emitter region (4), wherein the semiconductor body comprises a projecting mesa (5) comprising at least a portion of the collector region (2) and the base region (3), which mesa is surrounded by an isolation region (6). According to the invention, the semiconductor device (10) also comprises a field effect transistor with a source region, a drain region, an interposed channel region, a superimposed gate dielectric (7), and a gate region (8), which gate region (8) forms a highest part of the field effect transistor, and the height of the mesa (5) is greater than the height of the gate region (8). This device can be manufactured inexpensively and easily by a method according to the invention, and the bipolar transistor can have excellent high-frequency characteristics.
摘要翻译：本发明涉及具有基板（11）和半导体本体（1）的半导体器件（10），该半导体器件（1）包括双极晶体管，依次具有集电极区域（2），基极区域（3）和发射极区域 4），其中半导体主体包括包括集电极区域（2）和基极区域（3）的至少一部分的突出台面（5），该台面由隔离区域（6）包围。根据本发明，半导体器件（10）还包括具有源极区域，漏极区域，插入沟道区域，叠加栅极电介质（7）和栅极区域（8）的场效应晶体管，该栅极区域（8）形成场效应晶体管的最高部分，台面（5）的高度大于栅极区域（8）的高度。该装置可以通过根据本发明的方法廉价且容易地制造，并且双极晶体管可以具有优异的高频特性。

2. 发明申请

US20100289022A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED WITH SUCH A METHOD 有权
标题翻译：制造半导体器件的方法和采用这种方法获得的半导体器件
公开(公告)号：US20100289022A1
公开(公告)日：2010-11-18
申请号：US12094303
申请日：2006-10-29
申请人： Joost Melai , Erwin Hijzen , Philippe Meunier-Beillard , Johannes J.T.M. Donkers
发明人： Joost Melai , Erwin Hijzen , Philippe Meunier-Beillard , Johannes J.T.M. Donkers
IPC分类号： H01L29/73 , H01L21/331 , H01L29/02
CPC分类号： H01L29/66242 , H01L29/66287
摘要： The invention relates to a method of manufacturing a semiconductor device (10) with a substrate (11) and a semiconductor body (12) which is provided with at least one bipolar transistor having an emitter region (1), a base region (2) and a collector region (3), wherein in the semiconductor body (12) a first semiconductor region (13) is formed that forms one (3) of the collector and emitter regions (1,3) and on the surface of the semiconductor body (12) a stack of layers is formed comprising a first insulating layer (4), a polycrystalline semiconductor layer (5) and a second insulating layer (6) in which stack an opening (7) is formed, after which by non-selective epitaxial growth a further semiconductor layer (22) is deposited of which a monocrystalline horizontal part on the bottom of the opening (7) forms the base region (2) and of which a polycrystalline vertical part (2A) on a side face of the opening (7) is connected to the polycrystalline semiconductor layer (5), after which spacers (S) are formed parallel to the side face of the opening (7) and a second semiconductor region (31) is formed between said spacers (S) forming the other one (1) of the emitter and collector regions (1,3). According to the invention the above method is characterized in that before the further semiconductor layer (22) is deposited, the second insulating layer (6) is provided with an end portion (6A) that viewed in projection overhangs an end portion (5A) of the underlying semiconductor layer (5). In this way bipolar transistor devices can be obtained with good high frequency properties in a cost effective manner.
摘要翻译：本发明涉及一种制造半导体器件（10）的方法，所述半导体器件（10）具有衬底（11）和半导体本体（12），所述半导体器件（12）具有至少一个具有发射极区域（1），基极区域（2）和集电极区域（3），其中在所述半导体本体（12）中形成第一半导体区域（13），所述第一半导体区域形成所述集电极和发射极区域（1,3）中的一个（3）并且在所述半导体主体（12）形成一叠层，其包括形成有开口（7）的第一绝缘层（4），多晶半导体层（5）和第二绝缘层（6），之后通过非选择性外延生长沉积另外的半导体层（22），其中开口（7）的底部上的单晶水平部分形成基部区域（2），并且在该开口的侧面上具有多晶垂直部分（2A）（7）连接到多晶半导体层（5），之后是间隔（S）形成为平行于开口（7）的侧面，并且在形成发射极和集电极区域（1,3）的另一个（1）的所述间隔物（S）之间形成第二半导体区域（31））。根据本发明，上述方法的特征在于，在沉积另外的半导体层（22）之前，第二绝缘层（6）设置有端部（6A），其从突出部分观察到突出部分底层半导体层（5）。以这种方式，可以以成本有效的方式获得具有良好高频特性的双极晶体管器件。

3. 发明授权

US08373236B2 Semiconductor device and method of manufacturing such a device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08373236B2
公开(公告)日：2013-02-12
申请号：US12304506
申请日：2007-06-12
申请人： Erwin Hijzen , Joost Melai , Wibo Van Noort , Johannes Donkers , Philippe Meunier-Beillard , Andreas M. Piontek , Li Jen Choi , Stefaan Van Huylenbroeck
发明人： Erwin Hijzen , Joost Melai , Wibo Van Noort , Johannes Donkers , Philippe Meunier-Beillard , Andreas M. Piontek , Li Jen Choi , Stefaan Van Huylenbroeck
IPC分类号： H01L27/06
CPC分类号： H01L27/0623 , H01L21/8249 , H01L29/456 , H01L29/66242 , H01L29/7378
摘要： The invention relates to a semiconductor device (10) with a substrate (11) and a semiconductor body (1) comprising a bipolar transistor with in that order a collector region (2), a base region (3), and an emitter region (4), wherein the semiconductor body comprises a projecting mesa (5) comprising at least a portion of the collector region (2) and the base region (3), which mesa is surrounded by an isolation region (6). According to the invention, the semiconductor device (10) also comprises a field effect transistor with a source region, a drain region, an interposed channel region, a superimposed gate dielectric (7), and a gate region (8), which gate region (8) forms a highest part of the field effect transistor, and the height of the mesa (5) is greater than the height of the gate region (8). This device can be manufactured inexpensively and easily by a method according to the invention, and the bipolar transistor can have excellent high-frequency characteristics.
摘要翻译：本发明涉及具有基板（11）和半导体本体（1）的半导体器件（10），该半导体器件（1）包括双极晶体管，依次具有集电极区域（2），基极区域（3）和发射极区域 4），其中半导体主体包括包括集电极区域（2）和基极区域（3）的至少一部分的突出台面（5），该台面由隔离区域（6）包围。根据本发明，半导体器件（10）还包括具有源极区域，漏极区域，插入沟道区域，叠加栅极电介质（7）和栅极区域（8）的场效应晶体管，该栅极区域（8）形成场效应晶体管的最高部分，台面（5）的高度大于栅极区域（8）的高度。该装置可以通过根据本发明的方法廉价且容易地制造，并且双极晶体管可以具有优异的高频特性。

4. 发明授权

US08173511B2 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method 有权
标题翻译：利用这种方法制造半导体器件和半导体器件的制造方法
公开(公告)号：US08173511B2
公开(公告)日：2012-05-08
申请号：US12094303
申请日：2006-10-29
申请人： Joost Melai , Erwin Hijzen , Philippe Meunier-Beillard , Johannes Josephus Theodorus Marinus Donkers
发明人： Joost Melai , Erwin Hijzen , Philippe Meunier-Beillard , Johannes Josephus Theodorus Marinus Donkers
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L29/66242 , H01L29/66287
摘要： The invention relates to a method of manufacturing a semiconductor device (10) with a substrate (11) and a semiconductor body (12) which is provided with at least one bipolar transistor having an emitter region (1), a base region (2) and a collector region (3), wherein in the semiconductor body (12) a first semiconductor region (13) is formed that forms one (3) of the collector and emitter regions (1,3) and on the surface of the semiconductor body (12) a stack of layers is formed comprising a first insulating layer (4), a polycrystalline semiconductor layer (5) and a second insulating layer (6) in which stack an opening (7) is formed, after which by non-selective epitaxial growth a further semiconductor layer (22) is deposited of which a monocrystalline horizontal part on the bottom of the opening (7) forms the base region (2) and of which a polycrystalline vertical part (2A) on a side face of the opening (7) is connected to the polycrystalline semiconductor layer (5), after which spacers (S) are formed parallel to the side face of the opening (7) and a second semiconductor region (31) is formed between said spacers (S) forming the other one (1) of the emitter and collector regions (1,3). According to the invention the above method is characterized in that before the further semiconductor layer (22) is deposited, the second insulating layer (6) is provided with an end portion (6A) that viewed in projection overhangs an end portion (5A) of the underlying semiconductor layer (5). In this way bipolar transistor devices can be obtained with good high frequency properties in a cost effective manner.
摘要翻译：本发明涉及一种制造半导体器件（10）的方法，所述半导体器件（10）具有衬底（11）和半导体本体（12），所述半导体器件（12）具有至少一个具有发射极区域（1），基极区域（2）和集电极区域（3），其中在所述半导体本体（12）中形成第一半导体区域（13），所述第一半导体区域形成所述集电极和发射极区域（1,3）中的一个（3）并且在所述半导体主体（12）形成一叠层，其包括形成有开口（7）的第一绝缘层（4），多晶半导体层（5）和第二绝缘层（6），之后通过非选择性外延生长沉积另外的半导体层（22），其中开口（7）的底部上的单晶水平部分形成基部区域（2），并且在该开口的侧面上具有多晶垂直部分（2A）（7）连接到多晶半导体层（5），之后是间隔（S）形成为平行于开口（7）的侧面，并且在形成发射极和集电极区域（1,3）的另一个（1）的所述间隔物（S）之间形成第二半导体区域（31））。根据本发明，上述方法的特征在于，在沉积另外的半导体层（22）之前，第二绝缘层（6）设置有端部（6A），其从突出部分观察到突出部分底层半导体层（5）。以这种方式，可以以成本有效的方式获得具有良好高频特性的双极晶体管器件。

5. 发明申请

US20090200577A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090200577A1
公开(公告)日：2009-08-13
申请号：US11917628
申请日：2006-06-20
申请人： Erwin Hijzen , Joost Melai , Francois Neuilly
发明人： Erwin Hijzen , Joost Melai , Francois Neuilly
IPC分类号： H01L29/73 , H01L21/331 , H01L29/737
CPC分类号： H01L29/66287 , H01L29/1004 , H01L29/66242 , H01L29/732 , H01L29/7378
摘要： The invention relates to a semiconductor device with a substrate (11) and a semiconductor body (11) comprising a bipolar transistor with an emitter region (1), a base region (2) and a collector region (3) comprising a first, a second and a third connection conductor, which emitter region (1) comprises a mesa-shaped emitter connection region (1A) provided with spacers (4) and adjacent thereto a base connection region (2A) comprising a conductive region (2AA) of poly crystalline silicon. In a device (10) according to the invention, the base connection region (2A) comprises a further conducting region (2AB), which is positioned between the conductive region (2AA) of poly crystalline silicon and the base region (2) and which is made of a material with respect to which the conducting region (2AA) of polycrystalline silicon is selectively etchable. Such a device (10) is easy to manufacture by means of a method according to the invention and its bipolar transistor possesses excellent RF properties.
摘要翻译：本发明涉及一种具有衬底（11）和半导体本体（11）的半导体器件，该半导体器件包括具有发射极区域（1）的双极晶体管，基极区域（2）和集电极区域（3），该区域包括第一，第二和第三连接导体，所述发射极区域（1）包括设置有间隔物（4）并与其相邻的台面状发射极连接区域（1A），所述基极连接区域包括多晶体的导电区域（2AA）硅。在根据本发明的装置（10）中，基极连接区域（2A）包括位于多晶硅的导电区域（2AA）和基极区域（2）之间的另外的导电区域（2AB），并且由多晶硅的导电区域（2AA）可选择性地蚀刻的材料制成。这种器件（10）通过根据本发明的方法容易制造，并且其双极晶体管具有优异的RF特性。

6. 发明申请

US20090212394A1 BIPOLAR TRANSISTOR AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：双极晶体管及其制造方法
公开(公告)号：US20090212394A1
公开(公告)日：2009-08-27
申请号：US11912606
申请日：2006-04-21
申请人： Joost Melai , Vijayarachavan Madakasira
发明人： Joost Melai , Vijayarachavan Madakasira
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L29/7378 , H01L27/0623 , H01L29/0821 , H01L29/66242
摘要： The invention provides a bipolar transistor with an improved performance because of a reduced collector series resistance and a reduced collector to substrate capacitance. The bipolar transistor includes a protrusion (5) which size may be reduced to a dimension that cannot be achieved with lithographic techniques. The protrusion (5) comprises a collector region (21) and a base region (22), in which the collector region (21) covers and electrically connects to a first portion of a first collector connecting region (3). A second collector connecting region (13) covers a second portion of the first collector connecting region (3) and is separated from the protrusion (5) by an insulation layer (10, 11), which covers the sidewalls of the protrusion (5). A contact to the base region (22) is provided by a base connecting region (15), which adjoins the protrusion (5) and which is separated from the second collector connecting region (13) by an insulation layer (14). A collector contact (31) and a base contact (32) are formed simultaneously on an exposed portion of the second collector connecting region (13) and on a portion of the base connecting region (15) that has not been removed.
摘要翻译：本发明提供一种具有改进性能的双极晶体管，因为集电极串联电阻降低，集电极与基板电容降低。双极晶体管包括突起（5），其尺寸可以减小到用光刻技术无法实现的尺寸。突起（5）包括收集器区域（21）和基极区域（22），集电区域（21）覆盖并电连接到第一集电器连接区域（3）的第一部分。第二集电器连接区域（13）覆盖第一集电器连接区域（3）的第二部分，并且通过覆盖突起（5）的侧壁的绝缘层（10,11）与突起（5）分离，。与基部区域（22）的接触由邻接突起（5）的基部连接区域（15）提供，并且通过绝缘层（14）与第二集电器连接区域（13）分离。同时在第二集电器连接区域（13）的露出部分和未被去除的基座连接区域（15）的一部分上同时形成集电极触点（31）和基部触点（32）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式