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1. 发明授权

US07199461B2 Semiconductor package suitable for high voltage applications 有权
标题翻译：半导体封装适用于高压应用
公开(公告)号：US07199461B2
公开(公告)日：2007-04-03
申请号：US10762075
申请日：2004-01-21
申请人： Joon-seo Son , Shi-baek Nam , O-seob Jeon
发明人： Joon-seo Son , Shi-baek Nam , O-seob Jeon
IPC分类号： H01L23/52 , H01L23/495 , H05K7/20
CPC分类号： H01L23/49562 , H01L23/3107 , H01L2924/0002 , H01L2924/13091 , H01L2924/1815 , H01L2924/00
摘要： A semiconductor package has a structure in which a leadframe pad to which a semiconductor die is attached and inner leads electrically connected to the leadframe pad are covered by a molded housing, and outer leads extending from the inner leads protrude from a side surface of the molded housing to the outside. The outer leads include a first outer lead disposed in a central portion of the molded housing, second and third outer leads respectively disposed in a right and left of the first outer lead. The second and third outer leads each have bent portions in portions where they are adjacent to the side surface of the molded housing, the bent portions protruding to increase a space between the first outer lead and the bent portions in the molded housing. At least one of the bent portions of the second and third outer leads is covered by an extended portion of the molded housing.
摘要翻译：半导体封装具有其中附接有半导体管芯的引线框焊盘和与引线框垫片电连接的内部引线被模制壳体覆盖的结构，并且从内部引线延伸的外部引线从模制的侧表面突出住房到外面。外引线包括设置在模制壳体的中心部分中的第一外引线，分别设置在第一外引线的左右的第二外引线和第三外引线。第二和第三外引线各自具有与模制壳体的侧表面相邻的部分的弯曲部分，弯曲部分突出以增加模制壳体中的第一外引线和弯曲部分之间的空间。第二和第三外部引线的至少一个弯曲部分被模制外壳的延伸部分覆盖。

2. 发明申请

US20070181984A1 SEMICONDUCTOR PACKAGE SUITABLE FOR HIGH VOLTAGE APPLICATIONS 审中-公开
标题翻译：适用于高压应用的半导体封装
公开(公告)号：US20070181984A1
公开(公告)日：2007-08-09
申请号：US11695794
申请日：2007-04-03
申请人： Joon-seo Son , Shi-baek Nam , O-seob Jeon
发明人： Joon-seo Son , Shi-baek Nam , O-seob Jeon
IPC分类号： H01L23/495
CPC分类号： H01L23/49562 , H01L23/3107 , H01L2924/0002 , H01L2924/13091 , H01L2924/1815 , H01L2924/00
摘要： A semiconductor package has a structure in which a leadframe pad to which a semiconductor die is attached and inner leads electrically connected to the leadframe pad are covered by a molded housing, and outer leads extending from the inner leads protrude from a side surface of the molded housing to the outside. The outer leads include a first outer lead disposed in a central portion of the molded housing, second and third outer leads respectively disposed in a right and left of the first outer lead. The second and third outer leads each have bent portions in portions where they are adjacent to the side surface of the molded housing, the bent portions protruding to increase a space between the first outer lead and the bent portions in the molded housing. At least one of the bent portions of the second and third outer leads is covered by an extended portion of the molded housing.
摘要翻译：半导体封装具有其中附接有半导体管芯的引线框焊盘和与引线框垫片电连接的内部引线被模制壳体覆盖的结构，并且从内部引线延伸的外部引线从模制的侧表面突出住房到外面。外引线包括设置在模制壳体的中心部分中的第一外引线，分别设置在第一外引线的左右的第二外引线和第三外引线。第二和第三外引线各自具有与模制壳体的侧表面相邻的部分的弯曲部分，弯曲部分突出以增加模制壳体中的第一外引线和弯曲部分之间的空间。第二和第三外部引线的至少一个弯曲部分被模制外壳的延伸部分覆盖。

3. 发明授权

US08945992B2 Power device package comprising metal tab die attach paddle (DAP) and method of fabricating the package 有权
标题翻译：功率器件封装包括金属片裸片附着片（DAP）和制造封装的方法
公开(公告)号：US08945992B2
公开(公告)日：2015-02-03
申请号：US13278664
申请日：2011-10-21
申请人： Joon-seo Son , O-seob Jeon , Taek-keun Lee , Byoung-ok Lee
发明人： Joon-seo Son , O-seob Jeon , Taek-keun Lee , Byoung-ok Lee
IPC分类号： H01L21/00 , H01L23/495 , H01L23/00
CPC分类号： H01L23/49562 , H01L24/48 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.
摘要翻译：设置在引线框架和功率器件封装中的功率器件裸片之间的金属片裸片附着片（DAP）降低了由半导体功率器件的不同热膨胀系数（CTE）引起的施加在半导体功率器件裸片上的应力模具和引线框架。此外，功率器件封装基本上防止杂质通过增加由金属片DAP产生的密封剂的表面爬电距离和引线框架的可选的模锻而渗透到功率器件封装中。

4. 发明申请

US20090127681A1 SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体封装及其制造方法
公开(公告)号：US20090127681A1
公开(公告)日：2009-05-21
申请号：US12262700
申请日：2008-10-31
申请人： Joon-seo Son , Seung-won Lim , O-seob Jeon
发明人： Joon-seo Son , Seung-won Lim , O-seob Jeon
IPC分类号： H01L23/495 , H01L21/56
CPC分类号： H01L23/49575 , H01L21/565 , H01L23/16 , H01L23/4334 , H01L24/01 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/00
摘要： Provided are a semiconductor package and a method of fabricating the same. The semiconductor package includes a first die-pad on which a semiconductor chip is mounted on a bottom surface of the first die-pad, a support plate disposed adjacent to a lateral surface of the first die-pad, a support prop protruding from the support plate, and supporting the first die-pad, and a package body that encapsulates the first die-pad, the semiconductor chip, and the support plate.
摘要翻译：提供半导体封装及其制造方法。半导体封装包括第一裸片焊盘，半导体芯片安装在第一裸片焊盘的底表面上，与第一裸片焊盘的侧表面相邻设置的支撑板，从支撑件突出的支撑支架并且支撑第一管芯焊盘，以及封装体，其封装第一管芯焊盘，半导体芯片和支撑板。

5. 发明申请

US20080224285A1 Power module having stacked flip-chip and method of fabricating the power module 有权
标题翻译：具有堆叠倒装芯片的电源模块和制造电源模块的方法
公开(公告)号：US20080224285A1
公开(公告)日：2008-09-18
申请号：US12074225
申请日：2008-02-28
申请人： Seung-won Lim , O-Seob Jeon , Joon-seo Son , Keun-hyuk Lee , Yun-hwa Choi
发明人： Seung-won Lim , O-Seob Jeon , Joon-seo Son , Keun-hyuk Lee , Yun-hwa Choi
IPC分类号： H01L23/495 , H01L21/60
CPC分类号： H01L24/96 , H01L23/4334 , H01L23/49531 , H01L23/49575 , H01L23/49861 , H01L24/10 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/83 , H01L2224/05001 , H01L2224/0557 , H01L2224/05571 , H01L2224/056 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/1308 , H01L2224/13082 , H01L2224/13144 , H01L2224/13147 , H01L2224/1357 , H01L2224/136 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/83801 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2224/13099 , H01L2924/00 , H01L2224/05099 , H01L2924/00012
摘要： Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.
摘要翻译：提供了具有堆叠倒装芯片的功率模块和制造功率模块的方法。电源模块包括引线框架; 控制装置部分，包括控制装置芯片; 功率器件部件，其包括电源器件芯片并且电连接到引线框架; 以及控制和功率器件部分分别设置在上部和下部的互连衬底，并且每个控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底之一。该方法包括在晶片级的功率和控制器件芯片上形成凸块; 将电源和控制芯片单独切割成单独的芯片; 将功率器件芯片粘附到热衬底上，并将控制器件芯片粘附到互连衬底上; 在多夹具中将引线框架，热基板和互连基板彼此组合; 并且密封功率和控制装置芯片，并且控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底中的一个。

6. 发明授权

US08766419B2 Power module having stacked flip-chip and method of fabricating the power module 有权
标题翻译：具有堆叠倒装芯片的电源模块和制造电源模块的方法
公开(公告)号：US08766419B2
公开(公告)日：2014-07-01
申请号：US12643901
申请日：2009-12-21
申请人： Seung-won Lim , O-Seob Jeon , Joon-seo Son , Keun-kyuk Lee , Yun-hwa Choi
发明人： Seung-won Lim , O-Seob Jeon , Joon-seo Son , Keun-kyuk Lee , Yun-hwa Choi
IPC分类号： H01L23/495 , H01L23/433 , H01L23/498 , H01L23/00
CPC分类号： H01L24/96 , H01L23/4334 , H01L23/49531 , H01L23/49575 , H01L23/49861 , H01L24/10 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/83 , H01L2224/05001 , H01L2224/0557 , H01L2224/05571 , H01L2224/056 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/1308 , H01L2224/13082 , H01L2224/13144 , H01L2224/13147 , H01L2224/1357 , H01L2224/136 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/83801 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2224/13099 , H01L2924/00 , H01L2224/05099 , H01L2924/00012
摘要： Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.
摘要翻译：提供了具有堆叠倒装芯片的功率模块和制造功率模块的方法。电源模块包括引线框架; 控制装置部分，包括控制装置芯片; 功率器件部件，其包括电源器件芯片并且电连接到引线框架; 以及控制和功率器件部分分别设置在上部和下部的互连衬底，并且每个控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底之一。该方法包括在晶片级的功率和控制器件芯片上形成凸块; 将电源和控制芯片单独切割成单独的芯片; 将功率器件芯片粘附到热衬底上，并将控制器件芯片粘附到互连衬底上; 在多夹具中将引线框架，热基板和互连基板彼此组合; 并且密封功率和控制装置芯片，并且控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底中的一个。

7. 发明申请

US20120034741A1 POWER DEVICE PACKAGE COMPRISING METAL TAB DIE ATTACH PADDLE (DAP) AND METHOD OF FABRICATING THE PACKAGE 有权
标题翻译：包含金属贴纸连接垫（DAP）的电源装置包装和制造包装的方法
公开(公告)号：US20120034741A1
公开(公告)日：2012-02-09
申请号：US13278664
申请日：2011-10-21
申请人： Joon-seo Son , O-seob Jeon , Taek-keun Lee , Byoung-ok Lee
发明人： Joon-seo Son , O-seob Jeon , Taek-keun Lee , Byoung-ok Lee
IPC分类号： H01L21/56
CPC分类号： H01L23/49562 , H01L24/48 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame.
摘要翻译：设置在引线框架和功率器件封装中的功率器件裸片之间的金属片裸片附着片（DAP）降低了由半导体功率器件的不同热膨胀系数（CTE）引起的施加在半导体功率器件裸片上的应力模具和引线框架。此外，功率器件封装基本上防止杂质通过增加由金属片DAP产生的密封剂的表面爬电距离和引线框架的可选的模锻而渗透到功率器件封装中。

8. 发明申请

US20100155914A1 Power Module Having Stacked Flip-Chip and Method of Fabricating the Power Module 有权
标题翻译：具有堆叠倒装芯片的功率模块和制造功率模块的方法
公开(公告)号：US20100155914A1
公开(公告)日：2010-06-24
申请号：US12643901
申请日：2009-12-21
申请人： Seung-won Lim , O-Seob Jeon , Joon-seo Son , Keun-kyuk Lee , Yun-hwa Choi
发明人： Seung-won Lim , O-Seob Jeon , Joon-seo Son , Keun-kyuk Lee , Yun-hwa Choi
IPC分类号： H01L23/495 , H01L23/34
CPC分类号： H01L24/96 , H01L23/4334 , H01L23/49531 , H01L23/49575 , H01L23/49861 , H01L24/10 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/83 , H01L2224/05001 , H01L2224/0557 , H01L2224/05571 , H01L2224/056 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/1308 , H01L2224/13082 , H01L2224/13144 , H01L2224/13147 , H01L2224/1357 , H01L2224/136 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/83801 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2224/13099 , H01L2924/00 , H01L2224/05099 , H01L2924/00012
摘要： Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.
摘要翻译：提供了具有堆叠倒装芯片的功率模块和制造功率模块的方法。电源模块包括引线框架; 控制装置部分，包括控制装置芯片; 功率器件部件，其包括电源器件芯片并且电连接到引线框架; 以及控制和功率器件部分分别设置在上部和下部的互连衬底，并且每个控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底之一。该方法包括在晶片级的功率和控制器件芯片上形成凸块; 将电源和控制芯片单独切割成单独的芯片; 将功率器件芯片粘附到热衬底上，并将控制器件芯片粘附到互连衬底上; 在多夹具中将引线框架，热基板和互连基板彼此组合; 并且密封功率和控制装置芯片，并且控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底中的一个。

9. 发明授权

US07687903B2 Power module and method of fabricating the same 有权
标题翻译：电源模块及其制造方法
公开(公告)号：US07687903B2
公开(公告)日：2010-03-30
申请号：US12220638
申请日：2008-07-24
申请人： Joon-seo Son , Seung-won Lim , O-seob Jeon
发明人： Joon-seo Son , Seung-won Lim , O-seob Jeon
IPC分类号： H01L23/34
CPC分类号： H01L23/49551 , H01L23/3107 , H01L23/4334 , H01L23/4951 , H01L23/49572 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/165 , H01L2224/16245 , H01L2224/32245 , H01L2224/45139 , H01L2224/48095 , H01L2224/48247 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01078 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/1532 , H01L2924/181 , H01L2924/1815 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： Provided are a power module including a power package and a control package that are provided separately and can be highly integrated, and method of fabricating the power module. The power module includes: a molded power package including at least one power device on a first lead frame; and a molded control package vertically stacked on the power package, and including at least one control device on a second lead frame. A first part of the first lead frame and a first part of the second lead frame are coupled to each other so that the power package and the control package can be electrically coupled to each other.
摘要翻译：提供了一种功率模块，其包括单独提供并且可以高度集成的功率封装和控制封装以及制造功率模块的方法。功率模块包括：模制功率封装，其包括在第一引线框架上的至少一个功率器件; 以及垂直堆叠在所述功率封装上的模制控制组件，并且在第二引线框架上包括至少一个控制装置。第一引线框架的第一部分和第二引线框架的第一部分彼此耦合，使得功率封装和控制封装可以彼此电耦合。

10. 发明授权

US07675148B2 Power module having stacked flip-chip and method of fabricating the power module 有权
标题翻译：具有堆叠倒装芯片的电源模块和制造电源模块的方法
公开(公告)号：US07675148B2
公开(公告)日：2010-03-09
申请号：US12074225
申请日：2008-02-28
申请人： Seung-won Lim , O-Seob Jeon , Joon-seo Son , Keun-hyuk Lee , Yun-hwa Choi
发明人： Seung-won Lim , O-Seob Jeon , Joon-seo Son , Keun-hyuk Lee , Yun-hwa Choi
IPC分类号： H01L23/495
CPC分类号： H01L24/96 , H01L23/4334 , H01L23/49531 , H01L23/49575 , H01L23/49861 , H01L24/10 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/48 , H01L24/83 , H01L2224/05001 , H01L2224/0557 , H01L2224/05571 , H01L2224/056 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/1308 , H01L2224/13082 , H01L2224/13144 , H01L2224/13147 , H01L2224/1357 , H01L2224/136 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/83801 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2224/13099 , H01L2924/00 , H01L2224/05099 , H01L2924/00012
摘要： Provided are a power module having a stacked flip-chip and a method of fabricating the power module. The power module includes a lead frame; a control device part including a control device chip; a power device part including a power device chip and being electrically connected to the lead frame; and an interconnecting substrate of which the control and power device parts are respectively disposed at upper and lower portions, and each of the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method. The method includes forming bumps on power and control device chips on a wafer level; separately sawing the power and control device chips into individual chips; adhering the power device chip onto a thermal substrate and the control device chip onto an interconnecting substrate; combining a lead frame, the thermal substrate, and the interconnecting substrate with one another in a multi-jig; and sealing the power and control device chips, and the control and power device chips may be attached to one of the lead frame and the interconnecting substrate using a flip-chip bonding method.
摘要翻译：提供了具有堆叠倒装芯片的功率模块和制造功率模块的方法。电源模块包括引线框架; 控制装置部分，包括控制装置芯片; 功率器件部件，其包括电源器件芯片并且电连接到引线框架; 以及控制和功率器件部分分别设置在上部和下部的互连衬底，并且每个控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底之一。该方法包括在晶片级的功率和控制器件芯片上形成凸块; 将电源和控制芯片单独切割成单独的芯片; 将功率器件芯片粘附到热衬底上，并将控制器件芯片粘附到互连衬底上; 在多夹具中将引线框架，热基板和互连基板彼此组合; 并且密封功率和控制装置芯片，并且控制和功率器件芯片可以使用倒装芯片接合方法附接到引线框架和互连衬底中的一个。

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