专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08278218B2 Electrical conductor line having a multilayer diffusion barrier for use in a semiconductor device and method for forming the same 失效
标题翻译：具有用于半导体器件的多层扩散阻挡层的电导线及其形成方法
公开(公告)号：US08278218B2
公开(公告)日：2012-10-02
申请号：US13241415
申请日：2011-09-23
申请人： Joon Seok Oh , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Jeong Tae Kim , Nam Yeal Lee , Jae Hong Kim
发明人： Joon Seok Oh , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Jeong Tae Kim , Nam Yeal Lee , Jae Hong Kim
IPC分类号： H01L21/44
CPC分类号： H01L21/76846 , H01L21/76856 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An electrical conductor having a multilayer diffusion barrier of use in a resultant semiconductor device is presented. The electrical conductor line includes an insulation layer, a diffusion barrier, and a metal line. The insulation layer is formed on a semiconductor substrate and having a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a multi-layered structure made of TaN layer, an MoxOy layer and an Mo layer. The metal line is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
摘要翻译：本发明提供了一种在所得半导体器件中使用的具有多层扩散阻挡层的电导体。电导体线包括绝缘层，扩散阻挡层和金属线。绝缘层形成在半导体衬底上并具有金属线形成区域。扩散阻挡层形成在绝缘层的金属线形成区域的表面上，具有由TaN层，MoxOy层和Mo层构成的多层结构。金属线形成在扩散阻挡层上以填充绝缘层的金属线形成区域。

2. 发明授权

US07777336B2 Metal line of semiconductor device and method for forming the same 失效
标题翻译：半导体器件的金属线及其形成方法
公开(公告)号：US07777336B2
公开(公告)日：2010-08-17
申请号：US12329718
申请日：2008-12-08
申请人： Jeong Tae Kim , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Joon Seok Oh , Nam Yeal Lee , Jae Hong Kim
发明人： Jeong Tae Kim , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Joon Seok Oh , Nam Yeal Lee , Jae Hong Kim
IPC分类号： H01L21/48
CPC分类号： H01L23/53238 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L2924/0002 , H01L2924/00
摘要： A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate and a metal line forming region is formed in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer, and the diffusion layer has a multi-layered structure of an Ru layer, an RuxOy layer, an IrxOy layer, and a Ti layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
摘要翻译：半导体器件的金属线包括形成在半导体衬底上的绝缘层，并且在绝缘层中形成金属线形成区域。在绝缘层的金属线形成区域的表面上形成扩散阻挡层，扩散层具有Ru层，RuxOy层，IrxOy层和Ti层的多层结构。在扩散阻挡层上形成金属层以填充绝缘层的金属线形成区域。

3. 发明授权

US08080472B2 Metal line having a MoxSiy/Mo diffusion barrier of semiconductor device and method for forming the same 失效
标题翻译：具有半导体器件的MoxSiy / Mo扩散阻挡层的金属线及其形成方法
公开(公告)号：US08080472B2
公开(公告)日：2011-12-20
申请号：US12472721
申请日：2009-05-27
申请人： Joon Seok Oh , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Nam Yeal Lee , Jae Hong Kim
发明人： Joon Seok Oh , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Nam Yeal Lee , Jae Hong Kim
IPC分类号： H01L21/425 , H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , Y10T428/24612 , H01L2924/00
摘要： A metal line having a MoxSiy/Mo diffusion barrier of a semiconductor device and corresponding methods of fabricating the same are presented. The metal line includes an insulation layer, a diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a stack structure composed of a MoxSiy layer and a Mo layer. The metal layer is formed on the diffusion barrier which fills in the metal line forming region of the insulation layer.
摘要翻译：提出了具有半导体器件的MoxSiy / Mo扩散阻挡层的金属线及其制造方法。金属线包括绝缘层，扩散阻挡层和金属层。绝缘层形成在半导体衬底上并具有金属线形成区域。扩散阻挡层形成在绝缘层的金属线形成区域的表面上，并且具有由MoxSiy层和Mo层构成的堆叠结构。金属层形成在填充绝缘层的金属线形成区域的扩散阻挡层上。

4. 发明申请

US20100052167A1 METAL LINE HAVING A MOxSiy/Mo DIFFUSION BARRIER OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 失效
标题翻译：具有MOxSiy / Mo半导体器件的扩散阻挡层的金属线及其形成方法
公开(公告)号：US20100052167A1
公开(公告)日：2010-03-04
申请号：US12472721
申请日：2009-05-27
申请人： Joon Seok OH , Seung Jin YEOM , Baek Mann KIM , Dong Ha JUNG , Nam Yeal LEE , Jae Hong Kim
发明人： Joon Seok OH , Seung Jin YEOM , Baek Mann KIM , Dong Ha JUNG , Nam Yeal LEE , Jae Hong Kim
IPC分类号： H01L23/48 , H01L21/768 , B32B3/10
CPC分类号： H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , Y10T428/24612 , H01L2924/00
摘要： A metal line having a MoxSiy/Mo diffusion barrier of a semiconductor device and corresponding methods of fabricating the same are presented. The metal line includes an insulation layer, a diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a stack structure composed of a MoxSiy layer and a Mo layer. The metal layer is formed on the diffusion barrier which fills in the metal line forming region of the insulation layer.
摘要翻译：提出了具有半导体器件的MoxSiy / Mo扩散阻挡层的金属线及其制造方法。金属线包括绝缘层，扩散阻挡层和金属层。绝缘层形成在半导体衬底上并具有金属线形成区域。扩散阻挡层形成在绝缘层的金属线形成区域的表面上，并且具有由MoxSiy层和Mo层构成的堆叠结构。金属层形成在填充绝缘层的金属线形成区域的扩散阻挡层上。

5. 发明授权

US07981781B2 Metal line of semiconductor device having a diffusion barrier and method for forming the same 失效
标题翻译：具有扩散阻挡层的半导体器件的金属线及其形成方法
公开(公告)号：US07981781B2
公开(公告)日：2011-07-19
申请号：US12471801
申请日：2009-05-26
申请人： Joon Seok Oh , Seung Jin Yeom , Jae Hong Kim
发明人： Joon Seok Oh , Seung Jin Yeom , Jae Hong Kim
IPC分类号： H01L21/44 , H01L21/425 , H01L21/4763
CPC分类号： H01L21/76846 , H01L21/76856 , H01L21/76873 , Y10T428/26 , Y10T428/31678
摘要： A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a stack structure including an MoxSiyNz layer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
摘要翻译：半导体器件的金属线包括形成在半导体衬底上的绝缘层。绝缘层具有金属线形成区域。在绝缘层的金属线形成区域的表面上形成扩散阻挡层。扩散阻挡层包括具有MoxSiyNz层和Mo层的堆叠结构。在扩散阻挡层上形成金属层以填充绝缘层的金属线形成区域。

6. 发明授权

US08088687B2 Method for forming copper line having self-assembled monolayer for ULSI semiconductor devices 有权
标题翻译：用于形成具有用于ULSI半导体器件的自组装单层的铜线的方法
公开(公告)号：US08088687B2
公开(公告)日：2012-01-03
申请号：US12491826
申请日：2009-06-25
申请人： Seung Jin Yeom , Jae Hong Kim , Sung Goon Kang , Won Kyu Han
发明人： Seung Jin Yeom , Jae Hong Kim , Sung Goon Kang , Won Kyu Han
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/288 , H01L21/76861 , H01L21/76873 , H01L21/76874 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented. The copper line includes an interlayer dielectric, a self-assembled monolayer, catalytic particles on the monolayer, and a copper layer on the monolayer with the catalytic particles. The method includes the steps of forming an interlayer dielectric on a semiconductor substrate having a metal line forming region; forming a self-assembled monolayer on the metal line forming region; adsorbing catalytic particles on the self-assembled monolayer; forming using an electroless process a copper seed layer on the self-assembled monolayer having the catalytic particles adsorbed thereto; and forming a copper layer on the copper seed layer to fill in the metal line forming region.
摘要翻译：提出了一种用于ULSI半导体器件的自组装单层的铜线及其制造方法。铜线包括层间电介质，自组装单层，单层上的催化颗粒，以及具有催化颗粒的单层上的铜层。该方法包括在具有金属线形成区域的半导体衬底上形成层间电介质的步骤; 在金属线形成区域上形成自组装单层; 在自组装单层上吸附催化剂颗粒; 使用无电解方法在具有吸附催化剂颗粒的自组装单层上形成铜种子层; 并在铜籽晶层上形成铜层以填充金属线形成区域。

7. 发明授权

US09088871B2 Behavioral pattern collecting apparatus, and behavioral pattern analyzing system and method using the same 有权
标题翻译：行为模式收集装置和行为模式分析系统及其使用方法
公开(公告)号：US09088871B2
公开(公告)日：2015-07-21
申请号：US13586213
申请日：2012-08-15
申请人： Chan Kyu Park , Jae Hong Kim , Cheon Shu Park , Sang Seung Kang , Min Su Jang , Joo Chan Sohn
发明人： Chan Kyu Park , Jae Hong Kim , Cheon Shu Park , Sang Seung Kang , Min Su Jang , Joo Chan Sohn
IPC分类号： H04M11/04 , H04W4/02 , H04W4/22 , G08B21/04
CPC分类号： H04W4/027 , G08B21/0423 , H04W4/90
摘要： Disclosed are a wearable behavioral pattern collecting apparatus for generating collected information by analyzing a behavioral pattern of a wearer, and generating and thereby transmitting emergency call information when an emergency situation occurs, a network including a repeater to transmit information received from the behavioral pattern collecting apparatus to a remote monitoring server, and a behavioral pattern analyzing system and method for transmitting information on an emergency accident and a position of the wearer to a corresponding institution or a corresponding person in charge when an emergency situation such as a falling accident or the emergency accident occurs by observing a change in the behavioral pattern of the wearer.
摘要翻译：公开了一种穿戴式行为模式收集装置，用于通过分析穿戴者的行为模式来产生收集的信息，并且在紧急情况发生时生成并从而发送紧急呼叫信息，包括用于发送从行为模式收集装置接收的信息的中继器的网络远程监控服务器，以及在诸如坠落事故或紧急事故等紧急情况的情况下将关于紧急事故和穿戴者的位置的信息发送给相应机构或相应负责人的行为模式分析系统和方法通过观察穿戴者的行为模式的变化而发生。

8. 发明申请

US20140232682A1 Apparatus and Method for Detecting Contact 审中-公开
标题翻译：用于检测接触的装置和方法
公开(公告)号：US20140232682A1
公开(公告)日：2014-08-21
申请号：US14009055
申请日：2011-11-22
申请人： Jae Hong Kim
发明人： Jae Hong Kim
IPC分类号： G06F3/044
CPC分类号： G06F3/044 , G06F2203/04104
摘要： An apparatus for detecting contact, according to the present invention, comprises: a substrate; a plurality of first electrodes which are formed on the substrate; a plurality of second electrodes which are formed on the substrate; and a controller chip for receiving applied signals from the plurality of first electrodes and the plurality of second electrodes, and determining a contact input, wherein the controller chip eliminates a value of a predetermined proportion of values from each of the signals.
摘要翻译：根据本发明的用于检测接触的装置包括：基板; 形成在所述基板上的多个第一电极; 形成在所述基板上的多个第二电极; 以及控制器芯片，用于从所述多个第一电极和所述多个第二电极接收施加的信号，并且确定接触输入，其中所述控制器芯片从每个信号中消除了预定比例的值的值。

9. 发明授权

US08704880B2 Optical measuring apparatus and method of stereoscopic display device 有权
标题翻译：立体显示装置的光学测量装置及方法
公开(公告)号：US08704880B2
公开(公告)日：2014-04-22
申请号：US12978934
申请日：2010-12-27
申请人： Kyong Ho Lim , Don Gyou Lee , Jae Hong Kim
发明人： Kyong Ho Lim , Don Gyou Lee , Jae Hong Kim
IPC分类号： H04N13/04
CPC分类号： H04N17/04 , H04N13/327
摘要： An optical measuring apparatus and method for a stereoscopic display device are capable of measuring optical characteristics of the stereoscopic display device. The optical measuring apparatus includes a test image supplier for generating a 3D test signal, a 3D display for displaying left-eye image and/or right-eye image based on the 3D test signal supplied from the test image supplier, an image selection member for selectively transmitting the left-eye image and right-eye image to be displayed on the 3D display, and a light measuring device that measures luminance of the image transmitted via the image selection member and calculates 3D image crosstalk of the left eye image and the right eye image based on the measured luminance.
摘要翻译：用于立体显示装置的光学测量装置和方法能够测量立体显示装置的光学特性。光学测量装置包括用于产生3D测试信号的测试图像供应器，基于从测试图像供应商提供的3D测试信号显示左眼图像和/或右眼图像的3D显示器，用于选择性地发送要显示在3D显示器上的左眼图像和右眼图像;以及光测量装置，其测量经由图像选择部件发送的图像的亮度，并计算左眼图像和右眼图像的3D图像串扰基于测量亮度的眼睛图像。

10. 发明授权

US08548201B2 Apparatus and method for recognizing identifier of vehicle 有权
标题翻译：用于识别车辆识别符的装置和方法
公开(公告)号：US08548201B2
公开(公告)日：2013-10-01
申请号：US13224178
申请日：2011-09-01
申请人： Ho Sub Yoon , Kyu Dae Ban , Young Woo Yoon , Woo Han Yun , Do Hyung Kim , Jae Yeon Lee , Jae Hong Kim , Su Young Chi , Joo Chan Sohn
发明人： Ho Sub Yoon , Kyu Dae Ban , Young Woo Yoon , Woo Han Yun , Do Hyung Kim , Jae Yeon Lee , Jae Hong Kim , Su Young Chi , Joo Chan Sohn
IPC分类号： G06K9/00
CPC分类号： G06K9/6256 , G06K9/3258
摘要： The present invention detects a candidate ROI group associated with character strings/figure strings on the basis of a result acquired through prior learning of various types of license plates, verifies the interested region candidate group detected by using at least one condition of five predetermined conditions, and determines an MBR region in the selected ROI region from the verified interested region candidate group by considering a ratio between the height and width of the ROI region to recognize the license plate for the automobile. According to the present invention, it is possible to automatically detect the location of the license plate regardless of various types of license plate specifications defined for each of countries.
摘要翻译：本发明基于通过先前学习各种类型的车牌而获得的结果检测与字符串/图形串相关联的候选ROI组，通过使用五个预定条件的至少一个条件来检验感兴趣区域候选组，并且通过考虑ROI区域的高度和宽度之间的比率来识别汽车的车牌，从所验证的感兴趣区域候选组中确定所选择的ROI区域中的MBR区域。根据本发明，无论为每个国家定义的各种类型的车牌规格如何，都可以自动检测车牌的位置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式