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1. 发明授权

US09466761B2 Light emitting diode having well and/or barrier layers with superlattice structure 有权
标题翻译：具有具有超晶格结构的阱和/或势垒层的发光二极管
公开(公告)号：US09466761B2
公开(公告)日：2016-10-11
申请号：US12057842
申请日：2008-03-28
申请人： Joo Won Choi , Dong Seon Lee , Gyu Beom Kim , Sang Joon Lee
发明人： Joo Won Choi , Dong Seon Lee , Gyu Beom Kim , Sang Joon Lee
IPC分类号： H01L29/06 , H01L31/00 , H01L33/06 , B82Y20/00 , H01S5/343 , H01L33/12 , H01L33/32
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/32 , H01S5/34333
摘要： A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type GaN-based semiconductor compound layer and a P-type GaN-based semiconductor compound layer, wherein the active region comprises well and/or barrier layers with a superlattice structure. As the well and/or barrier layers with a superlattice structure are employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.
摘要翻译：公开了具有超晶格结构的阱和/或势垒层的发光二极管（LED）。 LED在N型GaN基半导体化合物层和P型GaN基半导体化合物层之间具有有源区，其中有源区包括具有超晶格结构的阱和/或势垒层。由于采用具有超晶格结构的阱和/或势垒层，可以减少由阱层与阻挡层之间的晶格失配引起的缺陷的发生。

2. 发明授权

US07649195B2 Light emitting diode having active region of multi quantum well structure 有权
标题翻译：具有多量子阱结构的有源区的发光二极管
公开(公告)号：US07649195B2
公开(公告)日：2010-01-19
申请号：US12137708
申请日：2008-06-12
申请人： Dong Seon Lee , Gyu Beom Kim
发明人： Dong Seon Lee , Gyu Beom Kim
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , H01L33/06
摘要： Disclosed is a light emitting diode (LED) having an active region of a multiple quantum well structure in which well layers and barrier layers are alternately laminated between a GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer. The LED includes a middle barrier layer having a bandgap relatively wider than the first barrier layer adjacent to the N-type compound semiconductor layer and the n-th barrier layer adjacent to the P-type compound semiconductor layer. The middle barrier layer is positioned between the first and n-th barrier layers. Accordingly, positions at which electrons and holes are combined in the multiple quantum well structure to emit light can be controlled, and luminous efficiency can be enhanced. Furthermore, an LED is provided with enhanced luminous efficiency using a bandgap engineering or impurity doping technique.
摘要翻译：公开了一种具有多量子阱结构的有源区的发光二极管（LED），其中阱层和势垒层交替层叠在GaN基N型化合物半导体层和GaN基P型化合物半导体之间层。 LED包括具有比与N型化合物半导体层相邻的第一势垒层和与P型化合物半导体层相邻的第n势垒层相对宽的带隙的中间势垒层。中间阻挡层位于第一和第n阻挡层之间。因此，可以控制电子和空穴在多量子阱结构中组合以发光的位置，并且可以提高发光效率。此外，使用带隙工程或杂质掺杂技术来提供LED具有增强的发光效率。

3. 发明申请

US20140000689A1 NITRIDE SEMICONDUCTOR-BASED SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：基于氮化物半导体的太阳能电池及其制造方法
公开(公告)号：US20140000689A1
公开(公告)日：2014-01-02
申请号：US14003899
申请日：2011-05-17
申请人： Dong Seon Lee , Si Young Bae , Do Hyung Kim , Jong Hyeob Baek , Seung-Jae Lee
发明人： Dong Seon Lee , Si Young Bae , Do Hyung Kim , Jong Hyeob Baek , Seung-Jae Lee
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/02363 , B82Y20/00 , H01L31/03044 , H01L31/035236 , H01L31/03529 , H01L31/075 , H01L31/1856 , Y02E10/544 , Y02E10/548
摘要： Disclosed herein are a nitride semiconductor-based solar cell including a photoactive layer having a wide area for incident light and a manufacturing method thereof. Opening parts are formed in a mask layer partially shielding a first n-type nitride semiconductor layer. The first n-type nitride semiconductor layer is exposed through the opening part, and second n-type nitride semiconductor layers are grown based on the exposed first n-type nitride semiconductor layer. The grown second n-type nitride semiconductor layer is buried in the opening part and is formed in a hexagonal pyramid shape. In addition, a photoactive layer and a p-type nitride semiconductor layer are sequentially formed along the second n-type nitride semiconductor layer. Therefore, a hole injection-electron pair is easily formed by the incident light. Further, an area of the photoactive layer is increased, such that photoelectric conversion efficiency is improved.
摘要翻译：本文公开了一种氮化物半导体基太阳能电池及其制造方法，该太阳能电池包括具有用于入射光的广泛面积的光活性层。开口部分形成在部分屏蔽第一n型氮化物半导体层的掩模层中。第一n型氮化物半导体层通过开口部露出，并且第二n型氮化物半导体层基于暴露的第一n型氮化物半导体层生长。生长的第二n型氮化物半导体层被埋在开口部分中并且形成为六角锥形。此外，沿着第二n型氮化物半导体层依次形成光活性层和p型氮化物半导体层。因此，入射光容易形成空穴注入 - 电子对。此外，光活性层的面积增加，光电转换效率提高。

4. 发明申请

US20090152586A1 LIGHT EMITTING DIODE HAVING ACTIVE REGION OF MULTI QUANTUM WELL STRUCTURE 有权
标题翻译：具有多量子结构活动区域的发光二极管
公开(公告)号：US20090152586A1
公开(公告)日：2009-06-18
申请号：US12261627
申请日：2008-10-30
申请人： Dong Seon Lee , Eu Jin Hwang
发明人： Dong Seon Lee , Eu Jin Hwang
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： Disclosed is a light emitting diode having an active region of a multi quantum well structure. The active region is positioned between GaN-based N-type and P-type compound semiconductor layers. At least one of barrier layers in the active region includes an undoped InGaN layer and a Si-doped GaN layer, and the Si-doped GaN layer is in contact with a well layer positioned at a side of the P-type compound semiconductor layer therefrom. Accordingly, carrier overflow and a quantum confined stark effect can be reduced, thereby improving an electron-hole recombination rate. Further, disclosed is an active region of a multi quantum well structure including relatively thick barrier layers and relatively thin barrier layers.
摘要翻译：公开了具有多量子阱结构的有源区的发光二极管。有源区位于GaN基N型和P型化合物半导体层之间。有源区中的至少一个势垒层包括未掺杂的InGaN层和Si掺杂的GaN层，并且掺杂Si的GaN层与位于其P型化合物半导体层侧面的阱层接触。因此，可以降低载流子溢出和量子限制的Stark效应，从而提高电子 - 空穴复合率。此外，公开了包括相对较厚的阻挡层和相对薄的阻挡层的多量子阱结构的有源区。

5. 发明授权

US07626209B2 Light emitting diode having active region of multi quantum well structure 有权
标题翻译：具有多量子阱结构的有源区的发光二极管
公开(公告)号：US07626209B2
公开(公告)日：2009-12-01
申请号：US12261627
申请日：2008-10-30
申请人： Dong Seon Lee , Eu Jin Hwang
发明人： Dong Seon Lee , Eu Jin Hwang
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： Disclosed is a light emitting diode having an active region of a multi quantum well structure. The active region is positioned between GaN-based N-type and P-type compound semiconductor layers. At least one of barrier layers in the active region includes an undoped InGaN layer and a Si-doped GaN layer, and the Si-doped GaN layer is in contact with a well layer positioned at a side of the P-type compound semiconductor layer therefrom. Accordingly, carrier overflow and a quantum confined stark effect can be reduced, thereby improving an electron-hole recombination rate. Further, disclosed is an active region of a multi quantum well structure including relatively thick barrier layers and relatively thin barrier layers.
摘要翻译：公开了具有多量子阱结构的有源区的发光二极管。有源区位于GaN基N型和P型化合物半导体层之间。有源区中的至少一个势垒层包括未掺杂的InGaN层和Si掺杂的GaN层，并且掺杂Si的GaN层与位于其P型化合物半导体层侧面的阱层接触。因此，可以降低载流子溢出和量子限制的Stark效应，从而提高电子 - 空穴复合率。此外，公开了包括相对较厚的阻挡层和相对薄的阻挡层的多量子阱结构的有源区。

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