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1. 发明授权

US06844604B2 Dielectric layer for semiconductor device and method of manufacturing the same 有权
标题翻译：用于半导体器件的介电层及其制造方法
公开(公告)号：US06844604B2
公开(公告)日：2005-01-18
申请号：US09776059
申请日：2001-02-02
申请人： Jongho Lee , Nae-In Lee
发明人： Jongho Lee , Nae-In Lee
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/28 , H01L21/31 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/51 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/94 , H01L29/76
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7881 , H01L29/94
摘要： A multi-layer dielectric layer structure for a semiconductor device. The multi-layer dielectric layer structure comprises a silicate interface layer having a dielectric constant greater than that of silicon nitride and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises one or more ordered pairs of first and second layers. With the present invention, the dielectric constant of the high-k dielectric layer can be optimized while improving interface characteristics. With a higher crystallization temperature realized by forming the multi-layer structure, each of whose layers is not more than the critical thickness, leakage current can be reduced, thereby improving device performance.
摘要翻译：一种用于半导体器件的多层电介质层结构。多层介电层结构包括具有大于氮化硅的介电常数的硅酸盐界面层和覆盖硅酸盐界面层的高k电介质层。高k电介质层包括一个或多个有序的第一和第二层对。利用本发明，可以优化高k电介质层的介电常数，同时改善界面特性。通过形成多层结构实现的更高的结晶温度，其层数不大于临界厚度，可以降低漏电流，从而提高器件性能。

2. 发明申请

US20050074982A1 Dielectric layer for semiconductor device and method of manufacturing the same 有权
公开(公告)号：US20050074982A1
公开(公告)日：2005-04-07
申请号：US10999608
申请日：2004-11-29
申请人： Jongho Lee , Nae-In Lee
发明人： Jongho Lee , Nae-In Lee
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/28 , H01L21/31 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/51 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/94 , H01L21/00
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7881 , H01L29/94
摘要： A multi-layer dielectric layer structure for a semiconductor device. The multi-layer dielectric layer structure comprises a silicate interface layer having a dielectric constant greater than that of silicon nitride and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises one or more ordered pairs of first and second layers. With the present invention, the dielectric constant of the high-k dielectric layer can be optimized while improving interface characteristics. With a higher crystallization temperature realized by forming the multi-layer structure, each of whose layers is not more than the critical thickness, leakage current can be reduced, thereby improving device performance.

3. 发明授权

US07112539B2 Dielectric layer for semiconductor device and method of manufacturing the same 有权
公开(公告)号：US07112539B2
公开(公告)日：2006-09-26
申请号：US10999608
申请日：2004-11-29
申请人： Jongho Lee , Nae-In Lee
发明人： Jongho Lee , Nae-In Lee
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7881 , H01L29/94
摘要： A multi-layer dielectric layer structure for a semiconductor device. The multi-layer dielectric layer structure comprises a silicate interface layer having a dielectric constant greater than that of silicon nitride and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises one or more ordered pairs of first and second layers. With the present invention, the dielectric constant of the high-k dielectric layer can be optimized while improving interface characteristics. With a higher crystallization temperature realized by forming the multi-layer structure, each of whose layers is not more than the critical thickness, leakage current can be reduced, thereby improving device performance.

4. 发明授权

US08246334B2 Apparatus for manufacturing a vehicle door trim 有权
标题翻译：用于制造车门装饰件的装置
公开(公告)号：US08246334B2
公开(公告)日：2012-08-21
申请号：US13221639
申请日：2011-08-30
申请人： Jongho Lee
发明人： Jongho Lee
IPC分类号： B29C45/22
CPC分类号： B29C45/1635 , B29C45/27 , B29L2031/3005 , B60R13/0243
摘要： A first mold has a core passage, and first and second cavities in fluid communication with each other at the core passage. A second mold has first and second nozzles therein that inject first and second resins to the first and second cavities, respectively. The core member is slidable within the core passage to provide or block the fluid communication between the cavities, and has a third nozzle therein to inject a third resin to the core passage. The first and second resins are injected into the cavities. The core member is moved to block the fluid communication between the cavities, before injecting the first and second resins is completed. The third resin is injected while moving the core member to provide the fluid communication, after injecting the first and second resins is completed. The molds are separated, thereby yielding a single molded product, such as a vehicle door trim.
摘要翻译：第一模具具有芯通道，并且在芯通道处彼此流体连通的第一和第二空腔。第二模具在其中具有分别将第一和第二树脂注入到第一和第二空腔中的第一和第二喷嘴。芯构件可在芯通道内滑动以提供或阻挡空腔之间的流体连通，并且其中具有第三喷嘴以将第三树脂注入到芯通道。将第一和第二树脂注入到空腔中。在完成注入第一和第二树脂之前，移动芯构件以阻止空腔之间的流体连通。在移动芯部件以提供流体连通时注入第三树脂，在完成注入第一和第二树脂之后。模具被分离，从而产生单个模制产品，例如车门装饰件。

5. 发明授权

US09021942B2 Cooker 有权
标题翻译：炊具
公开(公告)号：US09021942B2
公开(公告)日：2015-05-05
申请号：US13446961
申请日：2012-04-13
申请人： Jongho Lee , Jeahyuk Wie
发明人： Jongho Lee , Jeahyuk Wie
IPC分类号： A21B1/00 , F24C3/08 , F24C15/00 , F24C15/20
CPC分类号： F24C3/085 , F24C15/001 , F24C15/006 , F24C15/2007
摘要： A cooker is provided. The cooker includes a casing, a cavity part in the casing and including a cooking chamber to cook food, and an exhaust duct through which exhaust gas is discharged. The exhaust duct includes a first duct part having a lower end communicating with the cooking chamber, a second duct part extending from the other end of the first duct part, the second duct part making a predetermined angle with respect to the first duct part or having a predetermined curvature, and a flow passage extension protruded from a portion of the first duct part or the second duct part in an outward direction. At least a portion of the flow passage extension extends at an angle different from the predetermined angle between the first and second duct parts or the flow passage extension has a curvature different from the predetermined curvature of the second duct part.
摘要翻译：提供炊具。炊具包括壳体，壳体中的空腔部分，并且包括用于烹饪食物的烹饪室以及排出废气的排气管。排气管道包括具有与烹饪室连通的下端的第一管道部分，从第一管道部分的另一端延伸的第二管道部分，第二管道部分相对于第一管道部分形成预定角度或具有预定的曲率以及从第一导管部或第二导管部的一部分向外方突出的流路延伸部。流动通道延伸部的至少一部分以与第一和第二管道部分之间的预定角度不同的角度延伸，或者流动通道延伸部具有不同于第二管道部分的预定曲率的曲率。

6. 发明授权

US08970046B2 Semiconductor packages and methods of forming the same 有权
标题翻译：半导体封装及其形成方法
公开(公告)号：US08970046B2
公开(公告)日：2015-03-03
申请号：US13546163
申请日：2012-07-11
申请人： Young Lyong Kim , Taehoon Kim , Jongho Lee , Chul-Yong Jang
发明人： Young Lyong Kim , Taehoon Kim , Jongho Lee , Chul-Yong Jang
IPC分类号： H01L25/07 , H01L23/31 , H01L23/00 , H01L25/065 , H01L25/00
CPC分类号： H01L21/76802 , H01L23/3121 , H01L23/3135 , H01L23/3185 , H01L24/24 , H01L24/82 , H01L25/0657 , H01L25/50 , H01L2224/24146 , H01L2224/24225 , H01L2224/24226 , H01L2224/24227 , H01L2224/32145 , H01L2224/32225 , H01L2224/73267 , H01L2224/76155 , H01L2224/82102 , H01L2224/92144 , H01L2225/06524 , H01L2225/06562 , H01L2225/06568 , H01L2924/01012 , H01L2924/01029 , H01L2924/12042 , H01L2924/181 , H01L2924/00
摘要： A semiconductor package may include a substrate including a substrate connection terminal, at least one semiconductor chip stacked on the substrate and having a chip connection terminal, a first insulating layer covering at least portions of the substrate and the at least one semiconductor chip, and/or an interconnection penetrating the first insulating layer to connect the substrate connection terminal to the chip connection terminal. A semiconductor package may include stacked semiconductor chips, edge portions of the semiconductor chips constituting a stepped structure, and each of the semiconductor chips including a chip connection terminal; at least one insulating layer covering at least the edge portions of the semiconductor chips; and/or an interconnection penetrating the at least one insulating layer to connect to the chip connection terminal of each of the semiconductor chips.
摘要翻译：半导体封装可以包括：衬底，其包括衬底连接端子，堆叠在衬底上并具有芯片连接端子的至少一个半导体芯片，覆盖衬底和至少一个半导体芯片的至少一部分的第一绝缘层和/ 或穿透第一绝缘层的互连以将衬底连接端子连接到芯片连接端子。半导体封装可以包括堆叠的半导体芯片，半导体芯片的边缘部分构成阶梯结构，并且每个半导体芯片包括芯片连接端子; 至少一个绝缘层，至少覆盖半导体芯片的边缘部分; 和/或穿透至少一个绝缘层的互连以连接到每个半导体芯片的芯片连接端子。

7. 发明授权

US08652332B2 Liquid filtration using pressure difference across a hydrophobic membrane 有权
标题翻译：使用疏水膜上的压力差进行液体过滤
公开(公告)号：US08652332B2
公开(公告)日：2014-02-18
申请号：US12685315
申请日：2010-01-11
申请人： Rohit N. Karnik , Jongho Lee
发明人： Rohit N. Karnik , Jongho Lee
IPC分类号： B01D39/00 , B01D53/22
CPC分类号： B01D61/364 , B01D65/102 , B01D2325/08 , B01D2325/38 , C02F1/44 , C02F1/441 , C02F1/444 , C02F1/445 , C02F1/448 , C02F2103/08 , Y02A20/131
摘要： Method and devices for filtering liquid are provided that rely on pressure difference to filter liquid. In one embodiment, a device for filtering liquid includes a feed chamber, a permeate chamber, and a porous membrane that is at least partially hydrophobic and has one or more pores configured to be permeable to vapor. A pressure of a liquid substance in the feed chamber is increased such that vapor of the liquid substance is transported from the feed chamber to the permeate chamber. The resistance of flow in a hydrophilic layer of the membrane can be controlled to make the membrane defect-tolerant. In another embodiment, a second porous membrane is further included and the second porous membrane is spaced apart from the first porous membrane. Various methods for filtering liquid are also provided.
摘要翻译：提供过滤液体的方法和装置，其依赖于压力差来过滤液体。在一个实施例中，用于过滤液体的装置包括进料室，渗透室和至少部分疏水并且具有构造成可透过蒸气的一个或多个孔的多孔膜。进料室中的液体物质的压力增加，使得液体物质的蒸汽从进料室输送到渗透室。可以控制膜的亲水层中的流动阻力以使膜具有缺陷。在另一个实施方案中，还包括第二多孔膜，并且第二多孔膜与第一多孔膜间隔开。还提供了用于过滤液体的各种方法。

8. 发明授权

US08053881B2 Semiconductor package and method for manufacturing the same 有权
标题翻译：半导体封装及其制造方法
公开(公告)号：US08053881B2
公开(公告)日：2011-11-08
申请号：US12586565
申请日：2009-09-24
申请人： Young Lyong Kim , Jongho Lee , Cheul-Joong Youn , Eunchul Ahn
发明人： Young Lyong Kim , Jongho Lee , Cheul-Joong Youn , Eunchul Ahn
IPC分类号： H01L23/02
CPC分类号： H01L23/49827 , H01L21/563 , H01L23/3128 , H01L23/49531 , H01L23/49575 , H01L23/49861 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0657 , H01L25/105 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/48247 , H01L2224/49175 , H01L2224/73203 , H01L2224/73207 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06527 , H01L2225/1023 , H01L2225/1029 , H01L2225/1041 , H01L2225/1058 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor package includes a first package including at least one first semiconductor chip; a second package including an external connection terminal and at least one second semiconductor chip, the second package being stacked on the first package; and an interposer disposed between the first and second packages and connected to the external connection terminal to electrically connect the first and second packages to each other. The interposer comprises an intermediate connector having an exposed end portion to which the second package is electrically connected via the external connection terminal and a protruding end portion lower than the exposed end portion to which the first package is electrically connected.
摘要翻译：半导体封装包括包括至少一个第一半导体芯片的第一封装; 包括外部连接端子和至少一个第二半导体芯片的第二封装，所述第二封装堆叠在所述第一封装上; 以及设置在第一和第二封装之间并且连接到外部连接端子以将第一和第二封装彼此电连接的插入器。插入器包括具有暴露端部的中间连接器，第二封装经由外部连接端子电连接到该外部端部，以及比第一封装电连接到的暴露端部低的突出端部。

9. 发明申请

US20110213267A1 Method for identifying and evaluating parallel motor control function in the brain based on electromyogram signals 失效
标题翻译：基于肌电信号识别和评估大脑平行电机控制功能的方法
公开(公告)号：US20110213267A1
公开(公告)日：2011-09-01
申请号：US12807861
申请日：2010-09-15
申请人： Shinji Kakei , Jongho Lee , Yasuhiro Kagamihara
发明人： Shinji Kakei , Jongho Lee , Yasuhiro Kagamihara
IPC分类号： A61B5/0488
CPC分类号： A61B5/4528 , A61B5/0488 , A61B5/11 , A61B5/1121 , A61B5/4064 , A61B5/6824
摘要： The present invention provides a system for evaluating motor control function in the brain. This system is for evaluating the motor control function in the brain of a subject from the electromyogram (EMG) data of joint prime movers and the data on the position, velocity and acceleration of the joint, wherein both of the data have been obtained by measuring a target-tracking movement performed by the subject with a motion measurement unit that tracks a moving target, the system comprising the following means (a) to (c): (a) means for separating the frequencies of the EMG data and the frequencies of the data on the position, velocity and acceleration into a plurality of frequency components; (b) means for determining the ratio of viscosity coefficient to elastic coefficient (B/K ratio) for each of the frequency components by applying the EMG data and the data on the position, velocity and acceleration to a specific movement equation; and (c) means for evaluating the causal relationship between the motor control function in the brain and the target-tacking movement using the B/K ratio as an index.
摘要翻译：本发明提供一种用于评估大脑中的运动控制功能的系统。该系统用于从关节原动机的肌电图（EMG）数据和关节的位置，速度和加速度数据中评估受试者的脑中的运动控制功能，其中两个数据都是通过测量获得的由跟踪移动目标的运动测量单元由对象执行的目标跟踪运动，该系统包括以下装置（a）至（c）：（a）用于将EMG数据的频率和频率分离的装置关于位置，速度和加速度进入多个频率分量的数据; （b）通过将EMG数据和关于位置，速度和加速度的数据应用于特定运动方程来确定每个频率分量的粘度系数与弹性系数（B / K比）的比率的装置; 和（c）使用B / K比作为指标来评估大脑中的运动控制功能与目标定位运动之间的因果关系的装置。

10. 发明申请

US20100176057A1 Liquid Filtration Using Pressure Difference Across a Hydrophobic Membrane 有权
标题翻译：通过疏水膜的压力差进行液体过滤
公开(公告)号：US20100176057A1
公开(公告)日：2010-07-15
申请号：US12685315
申请日：2010-01-11
申请人： Rohit N. Karnik , Jongho Lee
发明人： Rohit N. Karnik , Jongho Lee
IPC分类号： B01D61/36 , B01D69/10 , B01D69/12
CPC分类号： B01D61/364 , B01D65/102 , B01D2325/08 , B01D2325/38 , C02F1/44 , C02F1/441 , C02F1/444 , C02F1/445 , C02F1/448 , C02F2103/08 , Y02A20/131
摘要： Method and devices for filtering liquid are provided that rely on pressure difference to filter liquid. In one embodiment, a device for filtering liquid includes a feed chamber, a permeate chamber, and a porous membrane that is at least partially hydrophobic and has one or more pores configured to be permeable to vapor. A pressure of a liquid substance in the feed chamber is increased such that vapor of the liquid substance is transported from the feed chamber to the permeate chamber. The resistance of flow in a hydrophilic layer of the membrane can be controlled to make the membrane defect-tolerant. In another embodiment, a second porous membrane is further included and the second porous membrane is spaced apart from the first porous membrane. Various methods for filtering liquid are also provided.
摘要翻译：提供过滤液体的方法和装置，其依赖于压力差来过滤液体。在一个实施例中，用于过滤液体的装置包括进料室，渗透室和至少部分疏水并且具有构造成可透过蒸汽的一个或多个孔的多孔膜。进料室中的液体物质的压力增加，使得液体物质的蒸汽从进料室输送到渗透室。可以控制膜的亲水层中的流动阻力以使膜具有缺陷。在另一个实施方案中，还包括第二多孔膜，并且第二多孔膜与第一多孔膜间隔开。还提供了用于过滤液体的各种方法。

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