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1. 发明申请

US20160293484A1 METHODS OF FORMING WIRING STRUCTURES 有权
标题翻译：形成接线结构的方法
公开(公告)号：US20160293484A1
公开(公告)日：2016-10-06
申请号：US15000302
申请日：2016-01-19
申请人： Jong-Jin Lee , Rak-Hwan Kim , Byung-Hee Kim , Jin-Nam Kim , Tsukasa Matsuda , Wan-Soo Park , Nae-In Lee , Jae-Won Chang , Eun-Ji Jung , Jeong-Ok Cha , Jae-Won Hwang , Jung-Ha Hwang
发明人： Jong-Jin Lee , Rak-Hwan Kim , Byung-Hee Kim , Jin-Nam Kim , Tsukasa Matsuda , Wan-Soo Park , Nae-In Lee , Jae-Won Chang , Eun-Ji Jung , Jeong-Ok Cha , Jae-Won Hwang , Jung-Ha Hwang
IPC分类号： H01L21/768
CPC分类号： H01L21/76882 , H01L21/76807 , H01L21/76843 , H01L21/76864 , H01L21/76877 , H01L23/522 , H01L23/5226 , H01L23/5283 , H01L23/53238
摘要： In a method of forming a wiring structure, a lower structure is formed on a substrate. An insulating interlayer is formed on the lower structure. The insulating interlayer is partially removed to form at least one via hole and a dummy via hole. An upper portion of the insulating interlayer is partially removed to form a trench connecting the via hole and the dummy via hole. A first metal layer filling the via hole and the dummy via hole is formed. A second metal layer filling the trench is formed on the first metal layer.
摘要翻译：在形成布线结构的方法中，在基板上形成下部结构。在下部结构上形成绝缘中间层。部分去除绝缘中间层以形成至少一个通孔和虚拟通孔。绝缘中间层的上部被部分地去除以形成连接通孔和虚拟通孔的沟槽。形成填充通孔和虚拟通孔的第一金属层。填充沟槽的第二金属层形成在第一金属层上。

2. 发明申请

US20160276267A1 METHODS OF FORMING WIRING STRUCTURES IN A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：在半导体器件中形成接线结构的方法
公开(公告)号：US20160276267A1
公开(公告)日：2016-09-22
申请号：US15018484
申请日：2016-02-08
申请人： Jong-Jin Lee , Rak-Hwan Kim , Byung-Hee Kim , Jin-Nam Kim , Tsukasa Matsuda , Nae-In Lee , Jeong-Ok Cha , Jung-Ha Hwang
发明人： Jong-Jin Lee , Rak-Hwan Kim , Byung-Hee Kim , Jin-Nam Kim , Tsukasa Matsuda , Nae-In Lee , Jeong-Ok Cha , Jung-Ha Hwang
IPC分类号： H01L23/522 , H01L21/285 , H01L23/532 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/28556 , H01L21/76843 , H01L21/76862 , H01L21/76864 , H01L21/76873 , H01L21/76877 , H01L21/76897 , H01L23/53238
摘要： Methods of forming wiring structures and methods of manufacturing semiconductor devices include forming a lower structure on a substrate, forming an interlayer insulating film including an opening on the lower structure, forming a liner film on an inner surface of the opening, treating a surface of the liner film by an ion bombardment, and forming a first conductive film on the liner film. The first conductive film is formed to be at least partially filled in the opening through a reflow process. Related wiring structures and semiconductor devices are also discussed.
摘要翻译：形成布线结构的方法和制造半导体器件的方法包括在基板上形成下部结构，在下部结构上形成包括开口的层间绝缘膜，在开口的内表面上形成衬垫膜，通过离子轰击形成衬垫膜，并在衬垫膜上形成第一导电膜。第一导电膜通过回流工艺形成为至少部分地填充在开口中。还讨论了相关的布线结构和半导体器件。

3. 发明申请

US20160141246A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20160141246A1
公开(公告)日：2016-05-19
申请号：US14924217
申请日：2015-10-27
申请人： Jin-Nam Kim , Tsukasa Matsuda , Rak-Hwan Kim , Byung-Hee Kim , Nae-In Lee , Jong-Jin Lee
发明人： Jin-Nam Kim , Tsukasa Matsuda , Rak-Hwan Kim , Byung-Hee Kim , Nae-In Lee , Jong-Jin Lee
IPC分类号： H01L23/522
CPC分类号： H01L23/485 , H01L21/7684 , H01L21/76846 , H01L21/76849 , H01L21/76882 , H01L23/49822 , H01L23/49866 , H01L23/5226 , H01L23/53209 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L23/53276 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom surface of the first trench.
摘要翻译：提供半导体器件及其制造方法。半导体器件包括：第一层间绝缘层，包括第一沟槽，在衬底上，沿着侧壁形成的第一衬里层和第一沟槽的底表面，并且包括贵金属，贵金属属于第五周期之一，是国际纯粹和应用化学联合会（IUPAC）编号之后的第六周期，属于周期图的第八至第十组之一，以及填充第一衬里层上的第一沟槽的第一金属线，所述第一金属线的顶表面朝向所述第一沟槽的底表面具有凸形形状。

4. 发明授权

US08486845B2 Plasma enhanced atomic layer deposition system and method 有权
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：US08486845B2
公开(公告)日：2013-07-16
申请号：US11084024
申请日：2005-03-21
申请人： Tsukasa Matsuda
发明人： Tsukasa Matsuda
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45544 , C23C16/4554 , C23C16/515 , H01J37/32009 , H01J37/32532 , H01L21/28562
摘要： A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Also included is coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate. A reactive gas is introduced within the process chamber, the reactive gas chemically reacting with contaminants in the process chamber to release the contaminants from at least one of a process chamber component or the substrate.
摘要翻译：使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底布置在处理室中，该处理室被配置为便于PEALD工艺，在处理室内引入第一工艺材料并引入第二工艺材料在处理室内。还包括在引入第二工艺材料期间将电磁功率耦合到处理室，以便产生促进第一和第二工艺材料在衬底表面处的还原反应的等离子体。反应性气体被引入处理室内，反应气体与处理室中的污染物质化学反应以从处理室组件或衬底中的至少一个释放污染物。

5. 发明授权

US08100147B2 Particle-measuring system and particle-measuring method 有权
标题翻译：粒子测量系统和粒子测量方法
公开(公告)号：US08100147B2
公开(公告)日：2012-01-24
申请号：US11782090
申请日：2007-07-24
申请人： Hayashi Otsuki , Tsukasa Matsuda , Kyoko Ikeda
发明人： Hayashi Otsuki , Tsukasa Matsuda , Kyoko Ikeda
IPC分类号： B01F5/18
CPC分类号： G01N1/24 , C23C16/4405 , C23C16/4412 , G01N15/06 , G01N2015/0693 , H01L21/67069 , H01L21/67115 , H01L21/67253 , H01L21/68742 , Y10T137/8593 , Y10T137/87652 , Y10T137/8766
摘要： The present invention provides a particle measuring system which is provided in a processing system 40 which generates an atmosphere obtained by exhausting air or a gas in a processing chamber 48 by a vacuum pump 98 and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe 90 which connects an exhaust opening 86 of the processing chamber 48 with the vacuum pump 98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.
摘要翻译：本发明提供一种粒子测量系统，其设置在处理系统40中，该处理系统40产生通过真空泵98排出处理室48中的空气或气体而获得的气氛，并将与半导体制造有关的工艺应用于晶片W 附着在排气管90上，排气管90将处理室48的排气口86与真空泵98连接，并测量废气中的颗粒数量及其测量方法，该系统和方法提供处理系统和清洁方法，其通过基于废气中的颗粒数量确定终点并执行不需要的膜的清洁来终止蚀刻工艺。

6. 发明授权

US07834739B2 Baggage management gate 有权
标题翻译：行李管理门
公开(公告)号：US07834739B2
公开(公告)日：2010-11-16
申请号：US12076337
申请日：2008-03-17
申请人： Shoji Yamaguchi , Mario Fuse , Yasunori Koda , Kunihiro Takahashi , Hiroyoshi Inoue , Tsukasa Matsuda
发明人： Shoji Yamaguchi , Mario Fuse , Yasunori Koda , Kunihiro Takahashi , Hiroyoshi Inoue , Tsukasa Matsuda
IPC分类号： B60R25/00 , G06F7/04 , G06F7/00
CPC分类号： G01R33/02
摘要： A baggage management gate includes a first reading device and a second reading device, a detecting device, a determining unit, a first opening and closing device and a second opening and closing device. The baggage management gate manages baggage that is restricted to be carried in or out from a predetermined region. And in order away from the region in which the baggage is managed, the first reading device, the second opening and closing device, the detecting device for both the first person and the second person, the first opening and closing device, and the second reading device are arranged in an entrance direction from the passage to the management region in which the baggage is managed.
摘要翻译：行李管理门包括第一读取装置和第二读取装置，检测装置，确定装置，第一打开和关闭装置以及第二打开和关闭装置。行李管理门管理被限制在预定区域内进出的行李。并且为了远离管理行李的区域，第一读取装置，第二打开和关闭装置，用于第一人和第二人的检测装置，第一打开和关闭装置以及第二读取设备沿着通道行进管理区域的入口方向排列。

7. 发明授权

US07667840B2 Particle-measuring system and particle-measuring method 有权
标题翻译：粒子测量系统和粒子测量方法
公开(公告)号：US07667840B2
公开(公告)日：2010-02-23
申请号：US11965357
申请日：2007-12-27
申请人： Hayashi Otsuki , Tsukasa Matsuda , Kyoko Ikeda
发明人： Hayashi Otsuki , Tsukasa Matsuda , Kyoko Ikeda
IPC分类号： G01N21/00
CPC分类号： G01N1/24 , C23C16/4405 , C23C16/4412 , G01N15/06 , G01N2015/0693 , H01L21/67069 , H01L21/67115 , H01L21/67253 , H01L21/68742 , Y10T137/8593 , Y10T137/87652 , Y10T137/8766
摘要： The present invention provides a particle measuring system which is provided in a processing system that generates an atmosphere obtained by exhausting air or a gas in a processing chamber by a vacuum pump and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe which connects an exhaust opening of the processing chamber with the vacuum pump, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.
摘要翻译：本发明提供一种粒子测量系统，其设置在处理系统中，该处理系统产生通过真空泵排出处理室中的空气或气体而获得的气氛，并将关于半导体制造的处理应用于大气中的晶片W，附着涉及将处理室的排气口与真空泵连接并测量排气中的颗粒数的排气管及其测量方法，提供处理系统的系统和方法以及终止的处理室的清洁方法通过基于排气中的颗粒数确定终点并执行不需要的膜的清洁来进行蚀刻处理。

8. 发明授权

US07351285B2 Method and system for forming a variable thickness seed layer 失效
标题翻译：用于形成可变厚度种子层的方法和系统
公开(公告)号：US07351285B2
公开(公告)日：2008-04-01
申请号：US11092266
申请日：2005-03-29
申请人： Tsukasa Matsuda
发明人： Tsukasa Matsuda
IPC分类号： C30B23/00 , C23C16/00 , B05D3/00
CPC分类号： C23C16/18 , C23C16/16 , H01L21/28556 , H01L21/76868 , H01L21/76873
摘要： A method and system for forming a variable thickness seed layer on a substrate for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thickness seed layer. The method includes providing a substrate in a process chamber containing a showerhead, with the center of the substrate generally aligned with an inner gas delivery zone of the showerhead and the edge of the substrate generally aligned with an outer gas delivery zone of the showerhead. The method further includes depositing a seed layer on the substrate by exposing the substrate to a first gas containing a metal-containing precursor flowed through the inner gas delivery zone, and exposing the substrate to a second gas flowed through the outer gas delivery zone, whereby the seed layer is deposited with a thickness at the edge of the substrate that is less than the thickness at the center of the substrate.
摘要翻译：一种用于在随后的金属电化学电镀工艺的衬底上形成可变厚度籽晶层的方法和系统，其中与使用恒定厚度的种子层相比，种子层厚度分布改善了电镀金属层的均匀性。该方法包括在包含喷头的处理室中提供衬底，其中衬底的中心大致与喷头的内部气体输送区域对准，并且衬底的边缘与喷头的外部气体输送区域大致对准。该方法还包括通过将衬底暴露于含有流过内部气体输送区的含金属前体的第一气体，并将衬底暴露于流过外部气体输送区的第二气体，从而将衬底层沉积在衬底上，由此籽晶层在衬底的边缘处被沉积成小于衬底中心的厚度。

9. 发明授权

US07344816B2 Image forming method 有权
标题翻译：图像形成方法
公开(公告)号：US07344816B2
公开(公告)日：2008-03-18
申请号：US10940926
申请日：2004-09-15
申请人： Yasuo Matsumura , Tsukasa Matsuda , Kazuhiko Arai , Tetsuo Yamada
发明人： Yasuo Matsumura , Tsukasa Matsuda , Kazuhiko Arai , Tetsuo Yamada
IPC分类号： G03G15/20
CPC分类号： G03G15/2064 , G03G2215/208
摘要： A method for forming an image contains steps of: transferring a toner having a volume average particle diameter of 5 μm or less to a recording medium as a toner image having a monochromatic maximum toner mass per area of 0.35 mg/cm2 or less; and fixing the toner image at a surface temperature of a fixing roll which is 130° C. or less. The toner preferably has 0.02 log(Pa)/° C. or less of a gradient of a storage, elasticity per temperature in a temperature range of from Tm+20° C. to Tm+50° C. Here, Tm represents a melting temperature of a crystalline resin contained in the crystalline toner.
摘要翻译：形成图像的方法包括以下步骤：将具有5μm或更小的体积平均粒径的调色剂转印到记录介质上，作为每单位面积的单色最大调色剂质量为0.35mg / cm 2的调色剂图像， / SUP>以下; 并将调色剂图像定影在130℃或更低的定影辊的表面温度。调色剂优选在Tm + 20℃至Tm + 50℃的温度范围内具有0.02log（℃）/℃或更低的存储梯度，每温度的弹性。这里，Tm表示熔融包含在结晶调色剂中的结晶树脂的温度。

10. 发明申请

US20080013212A1 Magnetic wire and recording medium 有权
标题翻译：磁线和记录介质
公开(公告)号：US20080013212A1
公开(公告)日：2008-01-17
申请号：US11730628
申请日：2007-04-03
申请人： Mario Fuse , Shoji Yamaguchi , Tsukasa Matsuda , Eizo Kurihara , Yasunori Koda , Kunihiro Takahashi
发明人： Mario Fuse , Shoji Yamaguchi , Tsukasa Matsuda , Eizo Kurihara , Yasunori Koda , Kunihiro Takahashi
IPC分类号： G11B5/62
CPC分类号： G11B5/642 , Y10T428/31993 , Y10T428/32
摘要： A magnetic wire includes a magnetic metal wire material having a surface coated with a layer of an insulating material. The magnetic wire has a magnetic coercive force of 30 A/m or less and has a Barkhausen effect.
摘要翻译：磁线包括具有涂覆有绝缘材料层的表面的磁性金属线材料。磁线具有30A / m以下的磁矫顽力，具有巴克豪森效应。

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