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1. 发明申请

US20110248279A1 Thin film transitor, fabrication method of the same, and display device having the same 有权
标题翻译：薄膜转换器及其制造方法以及具有该薄膜晶体管的显示装置
公开(公告)号：US20110248279A1
公开(公告)日：2011-10-13
申请号：US12929733
申请日：2011-02-11
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Hang , Yul-Kyu Lee
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Hang , Yul-Kyu Lee
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L51/5281 , H01L27/1214 , H01L27/1285 , H01L27/3262 , H01L27/3272 , H01L29/66765 , H01L29/78678
摘要： A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.
摘要翻译：薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置，所述薄膜晶体管包括基板; 基板上的多晶硅半导体层; 以及在所述半导体层和所述基板之间的金属图案，所述金属图案与所述半导体层绝缘，其中所述半导体层的多晶硅包括平行于结晶生长方向的晶界，并且所述多晶硅半导体层的表面粗糙度被限定在其表面的最低峰和最高峰之间的距离小于约15nm。

2. 发明授权

US08558239B2 Organic light emitting display device and manufacturing method thereof 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08558239B2
公开(公告)日：2013-10-15
申请号：US12904672
申请日：2010-10-14
申请人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Jin-Hee Kang
发明人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Jin-Hee Kang
IPC分类号： H01L27/14
CPC分类号： H01L27/3262 , H01L27/3258
摘要： An organic light emitting display having an active layer of a thin film transistor formed on a substrate, a first conductive layer formed at an edge of the active layer, a first insulation layer formed on the substrate and the first conductive layer, a second conductive layer corresponding to a central area of the active layer formed on the first insulation layer, a fanout lower electrode separated a predetermined distance from the second conductive layer, a pixel electrode, a third conductive layer formed on the second conductive layer, a fanout upper electrode formed on the fanout lower electrode, a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode, and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer.
摘要翻译：一种有机发光显示器，其具有形成在基板上的薄膜晶体管的有源层，形成在所述有源层的边缘的第一导电层，形成在所述基板上的第一绝缘层和所述第一导电层，第二导电层对应于形成在第一绝缘层上的有源层的中心区域，与第二导电层分隔预定距离的扇出下电极，像素电极，形成在第二导电层上的第三导电层，形成的扇出上电极在扇出的下电极上，形成在第三导电层，扇出上电极和像素电极上的第二绝缘层，以及与第二绝缘层形成的源电极和漏极接触的源极和漏极。

3. 发明授权

US08395160B2 Organic light emitting display apparatus and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08395160B2
公开(公告)日：2013-03-12
申请号：US12943886
申请日：2010-11-10
申请人： Sun Park , Chun-Gi You , Jong-Hyun Park , Jin-Hee Kang , Yul-Kyu Lee
发明人： Sun Park , Chun-Gi You , Jong-Hyun Park , Jin-Hee Kang , Yul-Kyu Lee
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L51/5215 , H01L27/3248
摘要： An organic light emitting display apparatus and a method of manufacturing the organic light emitting display apparatus, whereby the manufacturing process is simplified and the electric characteristics of the organic light emitting display apparatus are improved. The organic light emitting display apparatus includes: a gate electrode that includes a first conductive layer including ITO, a second conductive layer on the first conductive layer, a third conductive layer on the second conductive layer and including ITO, and a fourth conductive layer on the third conductive layer and including IZO or AZO; and a pixel electrode formed in the same layer level as the gate electrode and including a first electrode layer that includes ITO, a second electrode layer on the first electrode layer, a third electrode layer on the second electrode layer and including ITO, and a fourth electrode layer on the third electrode layer and including IZO or AZO.
摘要翻译：一种有机发光显示装置和制造有机发光显示装置的方法，由此简化了制造工艺，并提高了有机发光显示装置的电特性。有机发光显示装置包括：栅电极，其包括第一导电层，包括ITO，第一导电层上的第二导电层，第二导电层上的第三导电层，包括ITO;以及第四导电层，第三导电层并且包括IZO或AZO; 和形成为与栅极电极相同的层级的像素电极，并且包括包括ITO的第一电极层，在第一电极层上的第二电极层，在第二电极层上的包括ITO的第三电极层，以及第四电极层电极层，并且包括IZO或AZO。

4. 发明申请

US20130037812A1 THIN-FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：薄膜晶体管阵列基板，包括其的有机发光显示器及其制造方法
公开(公告)号：US20130037812A1
公开(公告)日：2013-02-14
申请号：US13349440
申请日：2012-01-12
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Yul-Kyu Lee , Sang-Ho Moon
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Yul-Kyu Lee , Sang-Ho Moon
IPC分类号： H01L33/08 , H01L51/52
CPC分类号： H01L27/3262 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L29/4908 , H01L51/5212
摘要： A thin-film transistor array substrate is disclosed. In one embodiment, the transistor includes a capacitor including a lower electrode disposed on the same layer as an active layer and an upper electrode disposed on the same layer as a gate electrode. The transistor may also include a first insulating layer disposed between the active layer and the gate electrode and between the lower and upper electrodes, the first insulating layer not being disposed on a perimeter of the lower electrode. The transistor may further include a second insulating layer between the first insulating layer and the source and drain electrodes, the second insulating layer not being disposed on perimeters of the upper and lower electrodes.
摘要翻译：公开了一种薄膜晶体管阵列基板。在一个实施例中，晶体管包括电容器，其包括设置在与有源层相同的层上的下电极和设置在与栅电极相同的层上的上电极。晶体管还可以包括设置在有源层和栅电极之间以及下电极和上电极之间的第一绝缘层，第一绝缘层不设置在下电极的周边上。晶体管还可以包括在第一绝缘层和源极和漏极之间的第二绝缘层，第二绝缘层不设置在上电极和下电极的周边上。

5. 发明申请

US20120139000A1 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20120139000A1
公开(公告)日：2012-06-07
申请号：US13099928
申请日：2011-05-03
申请人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Kwang-Hae Kim
发明人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Kwang-Hae Kim
IPC分类号： H01L27/32 , H01L51/56
CPC分类号： H01L27/1255 , H01L27/3276 , H01L29/4908
摘要： In an organic light-emitting display apparatus and a method of manufacturing the same, a pad region of the organic light-emitting display apparatus comprises a protrusion layer including a plurality of protrusion portions formed on a substrate so as to protrude, a pad lower electrode and a pad upper electrode, the pad lower electrode including a protrusion portion formed along a protrusion outline of the protrusion layer and a flat portion formed along the substrate, and the pad upper electrode being formed on the flat portion of the pad lower electrode. A source/drain electrode layer is formed on the pad upper electrode, an organic layer is formed on the source/drain electrode layer, and a counter electrode layer is formed on the protrusion portion of the pad lower electrode and the organic layer. The counter electrode layer follows the protrusion outline of the protrusion layer on the protrusion portion. According to such a structure, cost is reduced due to a reduction in the number of masks, the manufacturing process is simplified, and a lifting phenomenon of the organic layer in the pad region is solved.
摘要翻译：在有机发光显示装置及其制造方法中，有机发光显示装置的焊盘区域包括突出层，该突出层包括形成在基板上的多个突起部分，以便突出;焊盘下部电极以及焊盘上电极，所述焊盘下电极包括沿着所述突起层的突起轮廓形成的突出部分和沿着所述基板形成的平坦部分，并且所述焊盘上电极形成在所述焊盘下电极的平坦部分上。源极/漏电极层形成在焊盘上电极上，在源/漏电极层上形成有机层，并且在焊盘下电极和有机层的突出部分上形成对电极层。相对电极层跟随突出部分上的突起层的突起轮廓。根据这种结构，由于掩模数量的减少，成本降低，制造工艺简化，并且解决了焊盘区域中的有机层的提升现象。

6. 发明申请

US20110133195A1 Thin film transistor, display device including the same, and method of manufacturing the display device 有权
标题翻译：薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US20110133195A1
公开(公告)日：2011-06-09
申请号：US12926665
申请日：2010-12-02
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
IPC分类号： H01L27/15 , H01L29/12 , H01L21/336
CPC分类号： H01L29/42384 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/78678
摘要： A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å.
摘要翻译：薄膜晶体管，包括该薄膜晶体管的显示装置和制造该显示装置的方法，该薄膜晶体管包括一基板; 基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的半导体层; 以及与半导体层电连接的源极/漏极，其中栅电极具有大约至大约的厚度，并且栅极绝缘层具有大约至大约的厚度。

7. 发明申请

US20110121302A1 ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20110121302A1
公开(公告)日：2011-05-26
申请号：US12954544
申请日：2010-11-24
申请人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Jin-Hee Kang
发明人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Jin-Hee Kang
IPC分类号： H01L51/50 , H01L51/40
CPC分类号： H01L27/3262
摘要： An organic light emitting display device with a simplified manufacturing process and improved electrical characteristics, along with a method of manufacturing the device, are disclosed. The device includes: a substrate having a display area and a non-display area; a thin film transistor (TFT) in the display area; a wiring portion in the non-display area; an intermediate layer electrically connected to the TFT and including an organic light emitting layer; and a counter electrode on the intermediate layer. The TFT includes an active layer, a gate electrode, and source/drain electrodes electrically connected to the active layer. The source/drain electrodes include a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The wiring portion includes the same material as the first conductive layer. One of the source/drain electrodes is longer than the other, to function as a pixel electrode, and is electrically connected to the intermediate layer.
摘要翻译：公开了一种具有简化的制造工艺和改进的电气特性的有机发光显示装置，以及制造该装置的方法。该装置包括：具有显示区域和非显示区域的基板; 在显示区域中的薄膜晶体管（TFT）; 非显示区域中的布线部分; 电连接到TFT并包括有机发光层的中间层; 和中间层上的对电极。 TFT包括有源层，栅电极和电连接到有源层的源/漏电极。源极/漏极包括依次堆叠的第一导电层，第二导电层和第三导电层。布线部分包括与第一导电层相同的材料。源/漏电极中的一个比另一个长，用作像素电极，并且电连接到中间层。

8. 发明授权

US07948168B2 Organic light emitting display and method of manufacturing the same 有权
标题翻译：有机发光显示器及其制造方法
公开(公告)号：US07948168B2
公开(公告)日：2011-05-24
申请号：US12406197
申请日：2009-03-18
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Soo-Hyun Kim , Yul-Kyu Lee
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Soo-Hyun Kim , Yul-Kyu Lee
IPC分类号： H01J1/62 , H01J63/04 , H01L51/00
CPC分类号： H01L27/3246 , H01L27/3258 , H01L27/3276 , H01L51/5246 , H01L2251/558
摘要： An organic light emitting display includes a first substrate having a plurality of pixel areas, a driving transistor disposed on the first substrate, an organic layer disposed on the driving transistor, a first electrode disposed on the organic layer and electrically connected to the driving transistor, an insulating layer pattern disposed on the organic layer, the insulating layer pattern having a first opening corresponding to each pixel area, a bank pattern disposed on the insulating layer pattern, the bank pattern having a second opening corresponding to the first opening, an organic light emitting layer disposed in the first and second openings, and a second electrode disposed on the organic light emitting layer.
摘要翻译：有机发光显示器包括具有多个像素区域的第一基板，设置在第一基板上的驱动晶体管，设置在驱动晶体管上的有机层，设置在有机层上并与驱动晶体管电连接的第一电极，设置在所述有机层上的绝缘层图案，所述绝缘层图案具有对应于每个像素区域的第一开口，设置在所述绝缘层图案上的堤图案，所述堤图案具有对应于所述第一开口的第二开口，所述有机光设置在第一和第二开口中的第二电极和设置在有机发光层上的第二电极。

9. 发明申请

US20110101353A1 Display device and method of manufacturing the same 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20110101353A1
公开(公告)日：2011-05-05
申请号：US12805994
申请日：2010-08-27
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
IPC分类号： H01L33/00
CPC分类号： H01L29/78633 , H01L27/3272 , H01L51/5281
摘要： A display device and a method of manufacturing the same, the display device including a substrate, a semiconductor layer on the substrate, a light shielding layer on the substrate, the light shielding layer and the semiconductor layer being positioned directly on a same layer, a gate insulating layer on the substrate covering the semiconductor layer and the light shielding layer, and a gate electrode on the gate insulating layer, the gate electrode corresponding to a channel region of the semiconductor layer.
摘要翻译：一种显示装置及其制造方法，所述显示装置包括基板，所述基板上的半导体层，所述基板上的遮光层，所述遮光层和所述半导体层直接位于同一层上，覆盖半导体层和遮光层的基板上的栅极绝缘层，栅极绝缘层上的栅极电极，对应于半导体层的沟道区域的栅电极。

10. 发明授权

US08785910B2 Thin film transistor, display device including the same, and method of manufacturing the display device 有权
标题翻译：薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US08785910B2
公开(公告)日：2014-07-22
申请号：US12926665
申请日：2010-12-02
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
IPC分类号： H01L29/04 , H01L29/10 , H01L21/84 , H01L21/00 , H01L31/00
CPC分类号： H01L29/42384 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/78678
摘要： A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å.
摘要翻译：薄膜晶体管，包括该薄膜晶体管的显示装置和制造该显示装置的方法，该薄膜晶体管包括一基板; 基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的半导体层; 以及与半导体层电连接的源极/漏极，其中栅电极具有大约至大约的厚度，并且栅极绝缘层具有大约至大约的厚度。

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