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    • 4. 发明授权
    • Online data consistency checking in a network storage system with optional committal of remedial changes
    • 网络存储系统中的在线数据一致性检查,可选择进行补救更改
    • US08793223B1
    • 2014-07-29
    • US12368158
    • 2009-02-09
    • Yong ChoMaya PalemVignesh SukumarJohn K. EdwardsDavid GrunwaldAndy Kahn
    • Yong ChoMaya PalemVignesh SukumarJohn K. EdwardsDavid GrunwaldAndy Kahn
    • G06F17/30
    • G06F11/1076G06F17/3007H04L67/1097
    • A network storage server includes a tool for detecting and fixing errors while the network storage server remains online (available for servicing client requests), which includes enabling a user to approve or disapprove remedial changes before the changes are committed. The technique bypasses the usual consistency point process for new or modified data blocks representing potential remedial changes. At a consistency point, dirty data blocks representing the potential remedial changes are written to a change log file residing outside the volume. The modified data blocks are written in sequential order to logical blocks of the change log file. In response to a user input indicating that a potential change should be committed, the corresponding modified data blocks are read from the change log file in the order in which they were written to the change log file, and they are written to persistent storage in that order.
    • 网络存储服务器包括用于在网络存储服务器保持联机(可用于服务客户端请求)的情况下检测和修复错误的工具,其中包括使用户在更改发生之前批准或不批准补救更改。 该技术绕过代表潜在补救变化的新的或修改的数据块的通常一致性点过程。 在一致性点上,将表示潜在补救措施更改的脏数据块写入驻留在卷外的更改日志文件。 经修改的数据块按顺序写入变更日志文件的逻辑块。 响应于指示应该提交潜在变化的用户输入,从更改日志文件中读取相应的修改后的数据块,并将它们写入到更改日志文件中,并将它们写入永久存储器 订购。
    • 6. 发明申请
    • Transistors of Semiconductor Devices and Methods of Fabricating the Same
    • 半导体器件的晶体管及其制造方法
    • US20070190733A1
    • 2007-08-16
    • US11733430
    • 2007-04-10
    • Yong Cho
    • Yong Cho
    • H01L21/336
    • H01L29/66606H01L21/28114H01L29/105H01L29/665H01L29/66545H01L29/66553H01L29/66628
    • Transistors and methods of fabricating transistors are disclosed. A disclosed method comprises forming an inversion epitaxial layer on a silicon substrate; forming a hard mask on the inversion epitaxial layer; depositing a silicon epitaxial layer over the inversion epitaxial layer; forming a trench through the silicon epitaxial layer by removing the hard mask; forming reverse spacers on the sidewalls of the trench by filling the trench with an insulating layer and etching the insulating layer; forming a gate electrode over the reverse spacers; forming pocket-well regions and LDD regions in the silicon substrate by performing ion implantations; forming spacers on the sidewalls of the gate electrode; forming source and drain regions in the silicon substrate by performing an ion implantation; and forming a silicide layer on the gate electrode and the source and drain regions.
    • 公开了制造晶体管的晶体管和方法。 所公开的方法包括在硅衬底上形成反转外延层; 在反转外延层上形成硬掩模; 在所述反转外延层上沉积硅外延层; 通过去除硬掩模,通过硅外延层形成沟槽; 通过用绝缘层填充沟槽并蚀刻绝缘层,在沟槽的侧壁上形成反向间隔物; 在所述反向间隔物上形成栅电极; 通过进行离子注入在硅衬底中形成口袋区域和LDD区域; 在栅电极的侧壁上形成间隔物; 通过进行离子注入在硅衬底中形成源区和漏区; 以及在栅电极和源极和漏极区上形成硅化物层。