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1. 发明申请

US20130206992A1 DEVICE AND METHOD FOR MEASURING VIA HOLE OF SILICON WAFER 有权
标题翻译：用于通过硅波孔测量的装置和方法
公开(公告)号：US20130206992A1
公开(公告)日：2013-08-15
申请号：US13820575
申请日：2011-06-24
申请人： Jong Han Jin , Jae Wan Kim , Jong Ahn Kim , Chu-Shik Kang
发明人： Jong Han Jin , Jae Wan Kim , Jong Ahn Kim , Chu-Shik Kang
IPC分类号： G01B11/22 , G01B11/12
CPC分类号： G01B11/22 , G01B9/02008 , G01B11/12 , G01B2210/56 , G01N21/9501 , G01N2021/95653
摘要： The present invention pertains to a device and a method for measuring a via hole of a silicon wafer, wherein it is possible to precisely measure the depth of the via hole without damaging the wafer. Broadband infrared light is radiated to a silicon wafer which has a superior light transmission property, so that the depth of the via hole may be measured from the light which is reflected from each boundary surface of the wafer and the interference signal of reference light. The via hole measuring device according to the present invention includes: a light source unit for generating broadband infrared light; and an interferometer for radiating the light generated from the light source unit to a silicon wafer, so as to measure the depth of a via hole formed on the wafer according to the spectrum period of the interference signal of the light, which is reflected from the silicon wafer.
摘要翻译：本发明涉及用于测量硅晶片的通孔的装置和方法，其中可以精确地测量通孔的深度而不损坏晶片。宽带红外光被照射到具有优异的透光性的硅晶片，从而可以从从晶片的每个边界面反射的光和参考光的干涉信号测量通孔的深度。根据本发明的通孔测量装置包括：用于产生宽带红外光的光源单元; 以及干涉仪，用于将从光源单元产生的光发射到硅晶片，以便根据光的干涉信号的光谱周期来测量形成在晶片上的通孔的深度，该距离从硅晶片。

2. 发明授权

US09121696B2 Device and method for measuring via hole of silicon wafer 有权
标题翻译：用于测量硅晶片通孔的装置和方法
公开(公告)号：US09121696B2
公开(公告)日：2015-09-01
申请号：US13820575
申请日：2011-06-24
申请人： Jong Han Jin , Jae Wan Kim , Jong Ahn Kim , Chu-Shik Kang
发明人： Jong Han Jin , Jae Wan Kim , Jong Ahn Kim , Chu-Shik Kang
IPC分类号： G01J5/02 , G01B11/22 , G01B11/12 , G01B9/02 , G01N21/95 , G01N21/956
CPC分类号： G01B11/22 , G01B9/02008 , G01B11/12 , G01B2210/56 , G01N21/9501 , G01N2021/95653
摘要： The present invention pertains to a device and a method for measuring a via hole of a silicon wafer, wherein it is possible to precisely measure the depth of the via hole without damaging the wafer. Broadband infrared light is radiated to a silicon wafer which has a superior light transmission property, so that the depth of the via hole may be measured from the light which is reflected from each boundary surface of the wafer and the interference signal of reference light. The via hole measuring device according to the present invention includes: a light source unit for generating broadband infrared light; and an interferometer for radiating the light generated from the light source unit to a silicon wafer, so as to measure the depth of a via hole formed on the wafer according to the spectrum period of the interference signal of the light, which is reflected from the silicon wafer.
摘要翻译：本发明涉及用于测量硅晶片的通孔的装置和方法，其中可以精确地测量通孔的深度而不损坏晶片。宽带红外光被照射到具有优异的透光性的硅晶片，从而可以从从晶片的每个边界面反射的光和参考光的干涉信号测量通孔的深度。根据本发明的通孔测量装置包括：用于产生宽带红外光的光源单元; 以及干涉仪，用于将从光源单元产生的光发射到硅晶片，以便根据光的干涉信号的光谱周期来测量形成在晶片上的通孔的深度，该距离从硅晶片。

3. 发明授权

US08290007B2 Apparatus and method for stabilizing frequency of laser 有权
标题翻译：用于稳定激光频率的装置和方法
公开(公告)号：US08290007B2
公开(公告)日：2012-10-16
申请号：US12676294
申请日：2008-08-19
申请人： Jae-Wan Kim , Tae-Bong Eom , Jong-Ahn Kim , Chu-Shik Kang
发明人： Jae-Wan Kim , Tae-Bong Eom , Jong-Ahn Kim , Chu-Shik Kang
IPC分类号： H01S3/13
CPC分类号： H01S5/0687 , H01S5/005 , H01S5/0078 , H01S5/06804 , H01S5/0683
摘要： A frequency-stabilized laser apparatus and a method for stabilizing the frequency of a laser are disclosed. A semiconductor laser emits a beam. An external reflector has a resonance frequency and feeds back the emitted beam to the semiconductor laser if the frequency of the emitted beam is equal to the resonance frequency. An interference signal generator generates an interference signal for detecting the wavelength of the emitted beam and a controller detects the wavelength of the beam from the generated interference signal. According to the frequency-stabilized laser apparatus and the method for stabilizing the frequency of the laser, it is possible to stabilize the frequency of the beam emitted from the semiconductor laser and output the beam having the stable frequency for a long period of time.
摘要翻译：公开了一种频率稳定的激光装置和用于稳定激光器的频率的方法。半导体激光器发射光束。如果发射光束的频率等于谐振频率，则外部反射器具有谐振频率并将发射的光束反馈到半导体激光器。干扰信号发生器产生用于检测发射波束的波长的干扰信号，并且控制器根据所产生的干扰信号来检测波束的波长。根据频率稳定的激光装置和稳定激光的频率的方法，可以使从半导体激光器发射的光束的频率稳定并输出长时间具有稳定频率的光束。

4. 发明申请

US20100177795A1 APPARATUS AND METHOD FOR STABILIZING FREQUENCY OF LASER 有权
标题翻译：用于稳定激光频率的装置和方法
公开(公告)号：US20100177795A1
公开(公告)日：2010-07-15
申请号：US12676294
申请日：2008-08-19
申请人： Jae-Wan Kim , Tae-Bong Eom , Jong-Ahn Kim , Chu-Shik Kang
发明人： Jae-Wan Kim , Tae-Bong Eom , Jong-Ahn Kim , Chu-Shik Kang
IPC分类号： H01S3/13 , G01N21/55
CPC分类号： H01S5/0687 , H01S5/005 , H01S5/0078 , H01S5/06804 , H01S5/0683
摘要： A frequency-stabilized laser apparatus and a method for stabilizing the frequency of a laser are disclosed. A semiconductor laser emits a beam. An external reflector has a resonance frequency and feeds back the emitted beam to the semiconductor laser if the frequency of the emitted beam is equal to the resonance frequency. An interference signal generator generates an interference signal for detecting the wavelength of the emitted beam and a controller detects the wavelength of the beam from the generated interference signal. According to the frequency-stabilized laser apparatus and the method for stabilizing the frequency of the laser, it is possible to stabilize the frequency of the beam emitted from the semiconductor laser and output the beam having the stable frequency for a long period of time.
摘要翻译：公开了一种频率稳定的激光装置和用于稳定激光器的频率的方法。半导体激光器发射光束。如果发射光束的频率等于谐振频率，则外部反射器具有谐振频率并将发射的光束反馈到半导体激光器。干扰信号发生器产生用于检测发射波束的波长的干扰信号，并且控制器根据所产生的干扰信号来检测波束的波长。根据频率稳定的激光装置和稳定激光的频率的方法，可以使从半导体激光器发射的光束的频率稳定并输出长时间具有稳定频率的光束。

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