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1. 发明授权

US5892252A Chemical sensing trench field effect transistor and method for same 失效
标题翻译：化学感应沟槽场效应晶体管及其方法相同
公开(公告)号：US5892252A
公开(公告)日：1999-04-06
申请号：US18976
申请日：1998-02-05
申请人： Jonathan H. Hammond , Young Sir Chung
发明人： Jonathan H. Hammond , Young Sir Chung
IPC分类号： G01N27/414 , H01L23/58
CPC分类号： G01N27/414
摘要： A field effect transistor (10) for chemical sensing by measuring a change in a surface potential of a gate electrode (48) due to exposure to a fluid has a semiconductor substrate (12) with a trench (18,20). The trench has a first sidewall (30) and a second sidewall (32) disposed opposite the first sidewall to provide a fluid gap (50) for the fluid to be sensed. The gate electrode is disposed overlying the first sidewall of the trench, and a source region (54) and a drain region (56) are disposed in the second sidewall of the trench. A channel region (52) is disposed between the source and drain regions, and the gate electrode is disposed opposite the first channel region across the fluid gap. A heater (26) for regulating the temperature of the gate electrode is disposed in the first sidewall of the trench.
摘要翻译：用于通过测量由于暴露于流体而导致的栅电极（48）的表面电位变化的用于化学感测的场效应晶体管（10）具有具有沟槽（18,20）的半导体衬底（12）。沟槽具有与第一侧壁相对设置的第一侧壁（30）和第二侧壁（32），以提供待感测流体的流体间隙（50）。栅电极设置在沟槽的第一侧壁上方，并且源区（54）和漏区（56）设置在沟槽的第二侧壁中。沟道区域（52）设置在源极区域和漏极区域之间，并且栅极电极与穿过流体间隙的第一沟道区域相对设置。用于调节栅电极的温度的加热器（26）设置在沟槽的第一侧壁中。

2. 发明授权

US5747839A Chemical sensing trench field effect transistor 失效
标题翻译：化学感应沟槽场效应晶体管
公开(公告)号：US5747839A
公开(公告)日：1998-05-05
申请号：US720513
申请日：1996-09-30
申请人： Jonathan H. Hammond , Young Sir Chung
发明人： Jonathan H. Hammond , Young Sir Chung
IPC分类号： G01N27/414 , H01L23/58
CPC分类号： G01N27/414
摘要： A field effect transistor (10) for chemical sensing by measuring a change in a surface potential of a gate electrode (48) due to exposure to a fluid has a semiconductor substrate (12) with a trench (18, 20). The trench has a first sidewall (30) and a second sidewall (32) disposed opposite the first sidewall to provide a fluid gap (50) for the fluid to be sensed. The gate electrode is disposed overlying the first sidewall of the trench, and a source region (54) and a drain region (56) are disposed in the second sidewall of the trench. A channel region (52) is disposed between the source and drain regions, and the gate electrode is disposed opposite the first channel region across the fluid gap. A heater (26) for regulating the temperature of the gate electrode is disposed in the first sidewall of the trench.
摘要翻译：用于通过测量由于暴露于流体而导致的栅电极（48）的表面电位变化的用于化学感测的场效应晶体管（10）具有具有沟槽（18,20）的半导体衬底（12）。沟槽具有与第一侧壁相对设置的第一侧壁（30）和第二侧壁（32），以提供待感测流体的流体间隙（50）。栅电极设置在沟槽的第一侧壁上方，并且源区（54）和漏区（56）设置在沟槽的第二侧壁中。沟道区域（52）设置在源极区域和漏极区域之间，并且栅极电极与穿过流体间隙的第一沟道区域相对设置。用于调节栅电极的温度的加热器（26）设置在沟槽的第一侧壁中。

3. 发明申请

US20090059444A1 METHODS AND STRUCTURES FOR AN INTEGRATED TWO-AXIS MAGNETIC FIELD SENSOR 审中-公开
标题翻译：一体化双轴磁场传感器的方法和结构
公开(公告)号：US20090059444A1
公开(公告)日：2009-03-05
申请号：US11848053
申请日：2007-08-30
申请人： Phillip Glenn Mather , Jijun Sun , Young Sir Chung
发明人： Phillip Glenn Mather , Jijun Sun , Young Sir Chung
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00
摘要： A two-axis, single-chip external magnetic field sensor incorporates tunneling magneto-resistance (TMR) technology. In one embodiment, an integrated device includes at least two sensor elements having pinned layers with orientation situated at a known angle (e.g., 90 degrees) with respect to each other. In the presence of a magnetic field, the information from the multiple sensor elements can be processed (e.g., using a conventional bridge configuration) to determine the orientation of the integrated sensor with respect to the external field. In order to achieve an integrated sensor with multiple pinned layer orientations, a novel processing method utilizes antiferromagnetic pinning layers different materials with different blocking temperatures (e.g., PtMn and IrMn).
摘要翻译：双轴单芯片外部磁场传感器采用隧道磁阻（TMR）技术。在一个实施例中，集成装置包括至少两个传感器元件，传感器元件具有相对于彼此以已知角度（例如，90度）定位的钉扎层。在存在磁场的情况下，可以处理来自多个传感器元件的信息（例如，使用传统的桥接配置）来确定集成传感器相对于外部场的取向。为了实现具有多个钉扎层取向的集成传感器，新颖的处理方法利用具有不同阻挡温度的不同材料（例如PtMn和IrMn）的反铁磁钉扎层。

4. 发明申请

US20080112214A1 Electronic assembly having magnetic tunnel junction voltage sensors and method for forming the same 审中-公开
标题翻译：具有磁隧道结电压传感器的电子组件及其形成方法
公开(公告)号：US20080112214A1
公开(公告)日：2008-05-15
申请号：US11590276
申请日：2006-10-30
申请人： Young Sir Chung , Robert W. Baird , Mark A. Durlam , Pon Sung Ku
发明人： Young Sir Chung , Robert W. Baird , Mark A. Durlam , Pon Sung Ku
IPC分类号： G11C11/00 , G11C11/14 , G11C7/02
CPC分类号： H01L27/088 , B82Y25/00 , G11C11/16 , H01L27/0623 , H01L27/228
摘要： A method and assembly for sensing a voltage with a memory cell (88) is provided. The memory cell includes first and second electrodes (96,112), first and second ferromagnetic bodies (104,108) positioned between the first and second electrodes and an insulating body (94) positioned between the first and second ferromagnetic bodies. The first electrode is electrically connected to a first portion of a microelectronic assembly (47). The second electrode is electrically connected to a second portion of the microelectronic assembly. The voltage across the first and second portions of the microelectronic assembly is determined based on an electrical resistance of the memory cell. The memory cell may be a magnetoresistive random access memory (MRAM) cell. In one embodiment, the memory cell is a magnetic tunnel junction (MTJ) memory cell.
摘要翻译：提供了一种用于利用存储单元（88）感测电压的方法和组件。存储单元包括位于第一和第二电极之间的第一和第二电极（96,112），第一和第二铁磁体（104,108）和位于第一和第二铁磁体之间的绝缘体（94）。第一电极电连接到微电子组件（47）的第一部分。第二电极电连接到微电子组件的第二部分。基于存储单元的电阻来确定微电子组件的第一和第二部分两端的电压。存储单元可以是磁阻随机存取存储器（MRAM）单元。在一个实施例中，存储器单元是磁性隧道结（MTJ）存储单元。

5. 发明授权

US07220602B2 Magnetic tunnel junction sensor method 有权
公开(公告)号：US07220602B2
公开(公告)日：2007-05-22
申请号：US11192570
申请日：2005-07-29
申请人： Young Sir Chung , Robert W. Baird
发明人： Young Sir Chung , Robert W. Baird
IPC分类号： H01L21/00
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , H01F41/307
摘要： Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ comprises first and second magnetic electrodes separated by a dielectric configured to permit significant tunneling conduction therebetween. The first magnetic electrode has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.

6. 发明授权

US06888246B2 Semiconductor power device with shear stress compensation 有权
标题翻译：具有剪切应力补偿的半导体功率器件
公开(公告)号：US06888246B2
公开(公告)日：2005-05-03
申请号：US10447457
申请日：2003-05-29
申请人： Lei L. Mercado , Vijay Sarihan , Young Sir Chung , James Jen-Ho Wang , Edward R. Prack
发明人： Lei L. Mercado , Vijay Sarihan , Young Sir Chung , James Jen-Ho Wang , Edward R. Prack
IPC分类号： H01L21/60 , H01L21/768 , H01L23/31 , H01L23/485 , H01L23/532 , H01L23/48 , H01L23/52
CPC分类号： H01L24/12 , H01L23/3171 , H01L23/3192 , H01L23/5329 , H01L24/05 , H01L24/11 , H01L24/48 , H01L2224/03912 , H01L2224/0401 , H01L2224/04042 , H01L2224/05082 , H01L2224/05599 , H01L2224/05609 , H01L2224/05611 , H01L2224/05618 , H01L2224/05623 , H01L2224/05644 , H01L2224/0566 , H01L2224/05664 , H01L2224/05666 , H01L2224/0567 , H01L2224/05671 , H01L2224/05679 , H01L2224/1147 , H01L2224/13099 , H01L2224/1411 , H01L2224/48091 , H01L2224/48463 , H01L2224/85207 , H01L2224/85399 , H01L2924/00014 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2224/45099 , H01L2924/00
摘要： In accordance with one embodiment, a stress buffer (40) is formed between a power metal structure (90) and passivation layer (30). The stress buffer (40) reduces the effects of stress imparted upon the passivation layer (30) by the power metal structure (90). In accordance with an alternative embodiment, a power metal structure (130A) is partitioned into segments (1091), whereby electrical continuity is maintained between the segments (1090) by remaining portions of a seed layer (1052) and adhesion/barrier layer (1050). The individual segments (1090) impart a lower peak stress than a comparably sized continuous power metal structure (9).
摘要翻译：根据一个实施例，在功率金属结构（90）和钝化层（30）之间形成应力缓冲器（40）。应力缓冲器（40）减少由功率金属结构（90）施加在钝化层（30）上的应力的影响。根据替代实施例，功率金属结构（130A）被分割成段（1091），由此通过种子层（1052）和粘附/阻挡层（1052）的剩余部分在段（1090）之间保持电连续性 1050）。单个段（1090）赋予比相对大小的连续功率金属结构（9）更低的峰值应力。

7. 发明申请

US20090243607A1 Magnetic Sensor Design for Suppression of Barkhausen Noise 有权
标题翻译：用于抑制巴克豪森噪声的磁传感器设计
公开(公告)号：US20090243607A1
公开(公告)日：2009-10-01
申请号：US12055482
申请日：2008-03-26
申请人： Phillip G. Mather , Young Sir Chung , Bradley N. Engel
发明人： Phillip G. Mather , Young Sir Chung , Bradley N. Engel
IPC分类号： G01R33/05
CPC分类号： G01R33/093 , B82Y25/00 , Y10T428/1107
摘要： A semiconductor process and apparatus provide a high-performance magnetic field sensor from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216), where each differential sensor (e.g., 201) is formed from a Wheatstone bridge structure with four unshielded MTJ sensors (202-205), each of which includes a magnetic field pulse generator (e.g., 414) for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers (e.g., 411) to eliminate micromagnetic domain switches during measurements of small magnetic fields.
摘要翻译：半导体工艺和装置从仅需要两个不同的钉扎轴（206,216）的两个差分传感器配置（201,211）提供高性能磁场传感器，其中每个差分传感器（例如，201）由惠斯通具有四个非屏蔽MTJ传感器（202-205）的桥结构，其中每个包括用于选择性地施加场脉冲以稳定或恢复感测层（例如，411）的易轴磁化的磁场脉冲发生器（例如414）以在小磁场测量期间消除微磁畴开关。

8. 发明授权

US07414396B2 Sensor with magnetic tunnel junction and moveable magnetic field source 失效
标题翻译：传感器具有磁性隧道结和可动磁场源
公开(公告)号：US07414396B2
公开(公告)日：2008-08-19
申请号：US11192802
申请日：2005-07-29
申请人： Young Sir Chung , Robert W. Baird
发明人： Young Sir Chung , Robert W. Baird
IPC分类号： G01R33/02
CPC分类号： G01R33/06 , B82Y25/00 , G01R33/093 , G01R33/098
摘要： Methods and apparatus are provided for sensing physical parameters. The apparatus comprises a magnetic tunnel junction (MTJ) and a magnetic field source whose magnetic field overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. A magnetic shield is provided at least on a face of the MFS away from the MTJ. The MTJ comprises first and second magnetic electrodes separated by a dielectric configured to permit significant tunneling conduction therebetween. The first magnetic region has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.
摘要翻译：提供了用于感测物理参数的方法和装置。该装置包括磁隧道结（MTJ）和磁场源，其磁场与MTJ重叠，并且其与MTJ的接近度响应于对传感器的输入而变化。至少在远离MTJ的MFS的面上设有磁屏蔽。 MTJ包括由电介质隔开的第一和第二磁极，其被配置为允许它们之间的显着的隧穿传导。第一磁性区域的自旋轴被固定，第二磁极的自由轴自由。磁场源比第一磁极更靠近第二磁极。通过提供多个电耦合传感器来接收相同的输入但是具有不同的单个响应曲线并且期望地但不是基本上形成在相同的基板上来扩展总传感器动态范围。

9. 发明授权

US5683569A Method of sensing a chemical and sensor therefor 失效
标题翻译：感应化学品和传感器的方法
公开(公告)号：US5683569A
公开(公告)日：1997-11-04
申请号：US608357
申请日：1996-02-28
申请人： Young Sir Chung , Keenan L. Evans
发明人： Young Sir Chung , Keenan L. Evans
IPC分类号： G01N27/12 , G01N27/27 , G01N27/414 , G01N27/26
CPC分类号： G01N27/4143
摘要： A sensor (10) includes a gate electrode (20) overlying a channel region (34). A gap (22) between the gate electrode (20) and the channel region (34) allows a surface (28) of the gate electrode (20) to be exposed to a chemical. Upon exposure to the chemical, a surface potential or an electrical impedance of the gate electrode (20) may change. Comparing the changes in surface potential versus the changes in electrical impedance provides a method to distinguish between similar chemical species and also to extend the detection range of the sensor (10).
摘要翻译：传感器（10）包括覆盖通道区域（34）的栅电极（20）。栅电极（20）与沟道区（34）之间的间隙（22）允许栅极（20）的表面（28）暴露于化学物质。在暴露于化学品时，栅电极（20）的表面电位或电阻抗可能改变。比较表面电位与电阻抗变化的变化提供了区分类似化学物质的方法，并扩展了传感器（10）的检测范围。

10. 发明申请

US20090008748A1 ULTRA-THIN DIE AND METHOD OF FABRICATING SAME 有权
标题翻译：超薄薄膜及其制造方法
公开(公告)号：US20090008748A1
公开(公告)日：2009-01-08
申请号：US12211556
申请日：2008-09-16
申请人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Watson , Steven R. Young , Robert W. Baird
发明人： David P. Mancini , Young Sir Chung , William J. Dauksher , Donald F. Watson , Steven R. Young , Robert W. Baird
IPC分类号： H01L29/06
CPC分类号： H01L21/3065 , H01L21/78 , Y10S438/977
摘要： In accordance with a specific embodiment, a method of processing a semiconductor substrate is disclosed whereby the substrate is thinned, and the dice formed on the substrate are singulated by a common process. Trench regions are formed on a backside of the substrate. An isotropic etch of the backside results in a thinning of the substrate while maintaining the depth of the trenches, thereby facilitating singulation of the die.
摘要翻译：根据具体实施例，公开了一种处理半导体衬底的方法，由此使衬底变薄，并且通过公共工艺将形成在衬底上的裸片分割。沟槽区域形成在衬底的背面。背面的各向同性蚀刻导致衬底的薄化，同时保持沟槽的深度，从而有利于模具的分离。

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