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1. 发明申请

US20090059444A1 METHODS AND STRUCTURES FOR AN INTEGRATED TWO-AXIS MAGNETIC FIELD SENSOR 审中-公开
标题翻译：一体化双轴磁场传感器的方法和结构
公开(公告)号：US20090059444A1
公开(公告)日：2009-03-05
申请号：US11848053
申请日：2007-08-30
申请人： Phillip Glenn Mather , Jijun Sun , Young Sir Chung
发明人： Phillip Glenn Mather , Jijun Sun , Young Sir Chung
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00
摘要： A two-axis, single-chip external magnetic field sensor incorporates tunneling magneto-resistance (TMR) technology. In one embodiment, an integrated device includes at least two sensor elements having pinned layers with orientation situated at a known angle (e.g., 90 degrees) with respect to each other. In the presence of a magnetic field, the information from the multiple sensor elements can be processed (e.g., using a conventional bridge configuration) to determine the orientation of the integrated sensor with respect to the external field. In order to achieve an integrated sensor with multiple pinned layer orientations, a novel processing method utilizes antiferromagnetic pinning layers different materials with different blocking temperatures (e.g., PtMn and IrMn).
摘要翻译：双轴单芯片外部磁场传感器采用隧道磁阻（TMR）技术。在一个实施例中，集成装置包括至少两个传感器元件，传感器元件具有相对于彼此以已知角度（例如，90度）定位的钉扎层。在存在磁场的情况下，可以处理来自多个传感器元件的信息（例如，使用传统的桥接配置）来确定集成传感器相对于外部场的取向。为了实现具有多个钉扎层取向的集成传感器，新颖的处理方法利用具有不同阻挡温度的不同材料（例如PtMn和IrMn）的反铁磁钉扎层。

2. 发明授权

US07888756B2 MRAM tunnel barrier structure and methods 有权
标题翻译： MRAM隧道屏障结构及方法
公开(公告)号：US07888756B2
公开(公告)日：2011-02-15
申请号：US11689722
申请日：2007-03-22
申请人： Phillip Glenn Mather , Renu W. Dave , Frederick B. Mancoff
发明人： Phillip Glenn Mather , Renu W. Dave , Frederick B. Mancoff
IPC分类号： H01L29/70
CPC分类号： G11C11/16 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3909 , H01F10/3254 , H01F41/307
摘要： A magnetic tunnel junction (MTJ) structure is of the type having a tunnel barrier positioned between a fixed ferromagnetic layer and a free ferromagnetic layer, the tunnel barrier includes a first barrier layer contacting either the fixed ferromagnetic layer or the free ferromagnetic layer. The first barrier layer transmits a high spin polarization and is selected from the group consisting of metal oxides, metal nitrides, and metal oxynitrides. The second barrier layer, which contacts the first barrier layer, has a low barrier height and is selected from the group consisting of metal oxides, metal nitrides, and metal oxynitrides.
摘要翻译：磁隧道结（MTJ）结构是具有位于固定铁磁层和自由铁磁层之间的隧道势垒的类型，隧道势垒包括与固定铁磁层或自由铁磁层接触的第一阻挡层。第一阻挡层透过高自旋极化并选自金属氧化物，金属氮化物和金属氮氧化物。与第一阻挡层接触的第二阻挡层具有低势垒高度，并且选自金属氧化物，金属氮化物和金属氮氧化物。

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