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1. 发明申请

US20090230555A1 TUNGSTEN LINER FOR ALUMINUM-BASED ELECTROMIGRATION RESISTANT INTERCONNECT STRUCTURE 审中-公开
标题翻译：基于铝的电阻互连结构的TUNGSTEN LINER
公开(公告)号：US20090230555A1
公开(公告)日：2009-09-17
申请号：US12049698
申请日：2008-03-17
申请人： Jonathan D. Chapple-Sokol , Daniel A. Delibac , Zhong-Xiang He , Tom C. Lee , William J. Murphy , Timothy D. Sullivan , David C. Thomas , Daniel S. Vanslette
发明人： Jonathan D. Chapple-Sokol , Daniel A. Delibac , Zhong-Xiang He , Tom C. Lee , William J. Murphy , Timothy D. Sullivan , David C. Thomas , Daniel S. Vanslette
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53223 , H01L23/5329 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： An underlying interconnect level containing underlying W vias embedded in a dielectric material layer are formed on a semiconductor substrate. A metallic layer stack comprising, from bottom to top, a low-oxygen-reactivity metal layer, a bottom transition metal layer, a bottom transition metal nitride layer, an aluminum-copper layer, an optional top transition metal layer, and a top transition metal nitride layer. The metallic layer stack is lithographically patterned to form at least one aluminum-based metal line, which constitutes a metal interconnect structure. The low-oxygen-reactivity metal layer enhances electromigration resistance of the at least one aluminum-based metal line since formation of compound between the bottom transition metal layer and the dielectric material layer is prevented by the low-oxygen-reactivity metal layer, which does not interact with the dielectric material layer.
摘要翻译：在半导体衬底上形成包含埋在电介质材料层中的底层W通孔的底层互连层。一种金属层堆叠，包括从底部到顶部的低氧反应性金属层，底部过渡金属层，底部过渡金属氮化物层，铝 - 铜层，任选的顶部过渡金属层和顶部过渡层金属氮化物层。金属层堆叠被光刻图案化以形成至少一个构成金属互连结构的铝基金属线。低氧反应性金属层由于通过低氧反应性金属层防止了底部过渡金属层和电介质材料层之间的化合物的形成，因此提高了至少一种铝基金属线的电迁移率不与介电材料层相互作用。

2. 发明授权

US08003536B2 Electromigration resistant aluminum-based metal interconnect structure 有权
公开(公告)号：US08003536B2
公开(公告)日：2011-08-23
申请号：US12552641
申请日：2009-09-02
申请人： Jonathan D. Chapple-Sokol , Daniel A. Delibac , Zhong-Xiang He , Tom C. Lee , William J. Murphy , Timothy D. Sullivan , David C. Thomas , Daniel S. Vanslette
发明人： Jonathan D. Chapple-Sokol , Daniel A. Delibac , Zhong-Xiang He , Tom C. Lee , William J. Murphy , Timothy D. Sullivan , David C. Thomas , Daniel S. Vanslette
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/76834 , H01L21/32051 , H01L21/76846 , H01L21/7685 , H01L21/76858 , H01L2221/1078
摘要： A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.

3. 发明申请

US20100237503A1 ELECTROMIGRATION RESISTANT ALUMINUM-BASED METAL INTERCONNECT STRUCTURE 有权
标题翻译：基于电阻的基于铝的金属互连结构
公开(公告)号：US20100237503A1
公开(公告)日：2010-09-23
申请号：US12552641
申请日：2009-09-02
申请人： Jonathan D. Chapple-Sokol , Daniel A. Delibac , Zhong-Xiang He , Tom C. Lee , William J. Murphy , Timothy D. Sullivan , David C. Thomas , Daniel S. Vanslette
发明人： Jonathan D. Chapple-Sokol , Daniel A. Delibac , Zhong-Xiang He , Tom C. Lee , William J. Murphy , Timothy D. Sullivan , David C. Thomas , Daniel S. Vanslette
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76834 , H01L21/32051 , H01L21/76846 , H01L21/7685 , H01L21/76858 , H01L2221/1078
摘要： A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.
摘要翻译：在下面的金属互连结构上形成由元素金属衬垫，金属氮化物衬垫，Ti衬垫，铝部分和金属氮化物盖的从底部到顶部的垂直金属堆叠。垂直金属叠层在升高的温度下退火，以通过Ti衬垫与铝部分的材料反应而引起TiAl 3衬层的形成。 TiAl 3衬垫的材料对电迁移是耐受的，从而对包括元素金属衬垫，金属氮化物衬垫，TiAl 3衬里，铝部分和金属氮化物盖的垂直金属堆叠提供增强的电迁移阻力。在金属氮化物盖在加工过程中遭受侵蚀的区域中，增强的耐电迁移性的作用可能更为突出。

4. 发明授权

US08084864B2 Electromigration resistant aluminum-based metal interconnect structure 有权
标题翻译：防电镀铝基金属互连结构
公开(公告)号：US08084864B2
公开(公告)日：2011-12-27
申请号：US13114342
申请日：2011-05-24
申请人： Jonathan D. Chapple-Sokol , Daniel A. Delibac , Zhong-Xiang He , Tom C. Lee , William J. Murphy , Timothy D. Sullivan , David C. Thomas , Daniel S. Vanslette
发明人： Jonathan D. Chapple-Sokol , Daniel A. Delibac , Zhong-Xiang He , Tom C. Lee , William J. Murphy , Timothy D. Sullivan , David C. Thomas , Daniel S. Vanslette
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L21/76834 , H01L21/32051 , H01L21/76846 , H01L21/7685 , H01L21/76858 , H01L2221/1078
摘要： A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.
摘要翻译：在下面的金属互连结构上形成由元素金属衬垫，金属氮化物衬垫，Ti衬垫，铝部分和金属氮化物盖的从底部到顶部的垂直金属堆叠。垂直金属叠层在升高的温度下退火，以通过Ti衬垫与铝部分的材料反应而引起TiAl 3衬层的形成。 TiAl 3衬垫的材料对电迁移是耐受的，从而对包括元素金属衬垫，金属氮化物衬垫，TiAl 3衬里，铝部分和金属氮化物盖的垂直金属堆叠提供增强的电迁移阻力。在金属氮化物盖在加工过程中遭受侵蚀的区域中，增强的耐电迁移性的作用可能更为突出。

5. 发明申请

US20110221064A1 ELECTROMIGRATION RESISTANT ALUMINUM-BASED METAL INTERCONNECT STRUCTURE 有权
标题翻译：基于电阻的基于铝的金属互连结构
公开(公告)号：US20110221064A1
公开(公告)日：2011-09-15
申请号：US13114342
申请日：2011-05-24
申请人： Jonathan D. Chapple-Sokol , Daniel A. Delibac , Zhong-Xiang He , Tom C. Lee , William J. Murphy , Timothy D. Sullivan , David C. Thomas , Daniel S. Vanslette
发明人： Jonathan D. Chapple-Sokol , Daniel A. Delibac , Zhong-Xiang He , Tom C. Lee , William J. Murphy , Timothy D. Sullivan , David C. Thomas , Daniel S. Vanslette
IPC分类号： H01L23/522
CPC分类号： H01L21/76834 , H01L21/32051 , H01L21/76846 , H01L21/7685 , H01L21/76858 , H01L2221/1078
摘要： A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.
摘要翻译：在下面的金属互连结构上形成由元素金属衬垫，金属氮化物衬垫，Ti衬垫，铝部分和金属氮化物盖的从底部到顶部的垂直金属堆叠。垂直金属叠层在升高的温度下退火，以通过Ti衬垫与铝部分的材料反应而引起TiAl 3衬层的形成。 TiAl 3衬垫的材料对电迁移是耐受的，从而对包括元素金属衬垫，金属氮化物衬垫，TiAl 3衬里，铝部分和金属氮化物盖的垂直金属堆叠提供增强的电迁移阻力。在金属氮化物盖在加工过程中遭受侵蚀的区域中，增强的耐电迁移性的作用可能更为突出。

6. 发明授权

US08592941B2 Fuse structure having crack stop void, method for forming and programming same, and design structure 有权
标题翻译：具有裂纹阻挡的保险丝结构，其形成和编程方法以及设计结构
公开(公告)号：US08592941B2
公开(公告)日：2013-11-26
申请号：US12838850
申请日：2010-07-19
申请人： Jeffrey P. Gambino , Tom C. Lee , Kevin G. Petrunich , David C. Thomas
发明人： Jeffrey P. Gambino , Tom C. Lee , Kevin G. Petrunich , David C. Thomas
IPC分类号： H01L21/82 , H01L21/326 , H01L21/44 , H01L23/52
CPC分类号： H01L27/11206 , H01L23/5258 , H01L27/112 , H01L2924/0002 , H01L2924/00
摘要： The disclosure relates generally to fuse structures, methods of forming and programming the same, and more particularly to fuse structures having crack stop voids. The fuse structure includes a semiconductor substrate having a dielectric layer thereon and a crack stop void. The dielectric layer includes at least one fuse therein and the crack stop void is adjacent to two opposite sides of the fuse, and extends lower than a bottom surface and above a top surface of the fuse. The disclosure also relates to a design structure of the aforementioned.
摘要翻译：本公开一般涉及熔丝结构，其形成和编程的方法，更具体地涉及具有裂纹停止空隙的熔断结构。熔丝结构包括其上具有介电层的半导体衬底和裂纹阻挡空隙。电介质层包括至少一个熔断器，裂纹阻挡空隙与保险丝的两个相对的两侧相邻，并且比底表面和保险丝顶表面之上延伸。本公开还涉及上述的设计结构。

7. 发明申请

US20120012976A1 FUSE STRUCTURE HAVING CRACK STOP VOID, METHOD FOR FORMING AND PROGRAMMING SAME, AND DESIGN STRUCTURE 有权
标题翻译：具有断裂停止的保险丝结构，其形成和编程方法以及设计结构
公开(公告)号：US20120012976A1
公开(公告)日：2012-01-19
申请号：US12838850
申请日：2010-07-19
申请人： Jeffrey P. Gambino , Tom C. Lee , Kevin G. Petrunich , David C. Thomas
发明人： Jeffrey P. Gambino , Tom C. Lee , Kevin G. Petrunich , David C. Thomas
IPC分类号： H01L29/86 , G06F9/45 , H01L21/326 , H01L21/02
CPC分类号： H01L27/11206 , H01L23/5258 , H01L27/112 , H01L2924/0002 , H01L2924/00
摘要： The disclosure relates generally to fuse structures, methods of forming and programming the same, and more particularly to fuse structures having crack stop voids. The fuse structure includes a semiconductor substrate having a dielectric layer thereon and a crack stop void. The dielectric layer includes at least one fuse therein and the crack stop void is adjacent to two opposite sides of the fuse, and extends lower than a bottom surface and above a top surface of the fuse. The disclosure also relates to a design structure of the aforementioned.
摘要翻译：本公开一般涉及熔丝结构，其形成和编程的方法，更具体地涉及具有裂纹停止空隙的熔断结构。熔丝结构包括其上具有介电层的半导体衬底和裂纹阻挡空隙。电介质层包括至少一个熔断器，裂纹阻挡空隙与保险丝的两个相对的两侧相邻，并且比底表面和保险丝顶表面之上延伸。本公开还涉及上述的设计结构。

8. 发明授权

US06340601B1 Method for reworking copper metallurgy in semiconductor devices 失效
标题翻译：半导体器件中铜冶炼的再加工方法
公开(公告)号：US06340601B1
公开(公告)日：2002-01-22
申请号：US09476237
申请日：1999-12-30
申请人： Thomas F. Curran, Jr. , Timothy C. Krywanczyk , Michael S. Lube , Matthew D. Moon , Rock Nadeau , Clark D. Reynolds , Dean A. Schaffer , Joel M. Sharrow , Paul H. Smith, Jr. , David C. Thomas , Eric J. White , Kenneth H. Yao
发明人： Thomas F. Curran, Jr. , Timothy C. Krywanczyk , Michael S. Lube , Matthew D. Moon , Rock Nadeau , Clark D. Reynolds , Dean A. Schaffer , Joel M. Sharrow , Paul H. Smith, Jr. , David C. Thomas , Eric J. White , Kenneth H. Yao
IPC分类号： H01L214763
CPC分类号： H01L21/76892
摘要： A method of reworking copper metallurgy on semiconductor devices which includes selective removal of insulator, selective removal of copper, non-selective removal of copper and insulator followed by the redeposition of an insulating copper barrier layer and at least one metallurgical interconnect layer.
摘要翻译：一种对半导体器件上的铜冶炼进行再加工的方法，包括绝缘体的选择性去除，铜的选择性去除，铜和绝缘体的非选择性去除，然后再沉积绝缘铜阻挡层和至少一个冶金互连层。

9. 发明授权

US5523253A Array protection devices and fabrication method 失效
标题翻译：阵列保护装置及制造方法
公开(公告)号：US5523253A
公开(公告)日：1996-06-04
申请号：US389529
申请日：1995-02-16
申请人： Richard A. Gilmour , Thomas J. Hartswick , David C. Thomas , Ronald R. Uttecht , Erick G. Walton
发明人： Richard A. Gilmour , Thomas J. Hartswick , David C. Thomas , Ronald R. Uttecht , Erick G. Walton
IPC分类号： H01L23/62 , H01L21/82
CPC分类号： H01L23/62 , H01L2924/0002
摘要： The present disclosure sets forth an improved integrated circuit in which circuit elements, adjacent to a fuse, are protected by barriers positioned adjacent the fuse. In the improved integrated circuit the barriers are non-frangible, high melting point structures buried in the passivating layer, covering a wiring layer containing a fuse, and are between the fuse and adjacent circuit elements in the wiring layer structures.Also taught is a method of protecting circuit elements adjacent a fuse comprising the steps of depositing an insulating layer on the surface of a semiconductor device having active regions therein, forming a plurality of fuses and circuit elements in said layer, coating said fuses and elements with a second insulating layer, patterning said second insulating layer to form grooves between each of said fuses and any adjacent fuse or circuit element, and depositing a high melting point and non-frangible material in said grooves.
摘要翻译：本公开提出了一种改进的集成电路，其中与保险丝相邻的电路元件由位于保险丝附近的屏障保护。在改进的集成电路中，阻挡层是非易碎的，高熔点结构掩埋在钝化层中，覆盖包含保险丝的布线层，并且位于布线层结构中的熔丝和相邻的电路元件之间。还教导了一种保护靠近熔丝的电路元件的方法，包括以下步骤：在其中具有有源区的半导体器件的表面上沉积绝缘层，在所述层中形成多个保险丝和电路元件，将所述保险丝和元件涂覆第二绝缘层，图案化所述第二绝缘层以在每个所述保险丝和任何相邻的熔丝或电路元件之间形成槽，以及在所述槽中沉积高熔点和非易碎材料。

10. 发明申请

US20120102885A1 METHOD FOR FORMING A POUCH 审中-公开
标题翻译：形成方法
公开(公告)号：US20120102885A1
公开(公告)日：2012-05-03
申请号：US13060754
申请日：2009-10-13
申请人： Phillip Neal Sharp , Sven Newman , David C. Thomas , Anita G. Mooy
发明人： Phillip Neal Sharp , Sven Newman , David C. Thomas , Anita G. Mooy
IPC分类号： B65B3/02
CPC分类号： B65B43/02 , B05C17/00583 , B65B3/02 , B65B7/02 , B65B51/02 , B65B61/202 , B65B61/24 , B65B69/005 , B65D35/10 , B65D35/28 , B65D75/28 , B65D75/30 , B65D75/5811
摘要： A method of forming and filling a pouch, comprises forming opposing walls of a film; sealing the opposing walls of film together to form at least one pouch; filling an interior section of the at least one pouch through an opening in an upper portion of the at least one pouch with a flowable material; forming a top sealed expressing-shaped region to close the opening in the at least one pouch; and cradling the pouch with a foldable flat that is more rigid than the pouch that can be folded or rolled to compress the pouch to express the flowable material through the expressing shaped region.
摘要翻译：一种形成和填充袋的方法，包括形成膜的相对壁; 将膜的相对的壁密封在一起以形成至少一个袋; 通过具有可流动材料的所述至少一个袋的上部中的开口填充所述至少一个袋的内部部分; 形成顶部密封的表面形状区域以封闭所述至少一个袋子中的开口; 并且用可折叠或可滚动以压缩袋以便通过表达成形区域表达可流动材料的小袋可折叠的扁平物包起来。

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