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1. 发明授权

US06919862B2 High impedance structures for multifrequency antennas and waveguides 失效
标题翻译：多频天线和波导的高阻抗结构
公开(公告)号：US06919862B2
公开(公告)日：2005-07-19
申请号：US10673024
申请日：2003-09-26
申请人： Jonathan Bruce Hacker , Moonil Kim , John A. Higgins
发明人： Jonathan Bruce Hacker , Moonil Kim , John A. Higgins
IPC分类号： H01Q9/04 , H01Q15/00 , H01Q15/23 , H01Q21/06 , H01Q15/02
CPC分类号： H01P3/12 , H01P1/2005 , H01Q9/0414 , H01Q15/008 , H01Q15/23 , H01Q21/061
摘要： A multi layered high impedance structure presents a high impedance to multiple frequency signals, with a different frequency for each layer. Each layer comprises a dielectric substrate, and an array of radiating elements such as parallel conductive strips or conductive patches on the substrate's top surface, with a conductive layer on the bottom surface of the bottommost layer. The radiating elements of succeeding layers are vertically aligned with conductive vias extending through the substrates to connect the radiating elements to the ground plane. Each layer presents as a series of parallel resonant L-C circuits to an E field at a particular signal frequency, resulting in a high impedance surface at that frequency. The new structure can be used as the substrate for a microstrip patch antenna to provide an optimal electrical distance between the resonator and backplane at multiple frequencies. It can also be used in waveguides that transmit multiple signal frequencies signals in one polarization or that are cross-polarized. As a waveguide it maintains a near-uniform density E and H fields, resulting in near uniform signal power density across the waveguide's cross-section.
摘要翻译：多层高阻抗结构对多个频率信号呈现高阻抗，每层具有不同的频率。每个层包括电介质基底，以及阵列的辐射元件，例如基底顶表面上的平行导电条或导电贴片，在最底层的底表面上具有导电层。后续层的辐射元件与延伸穿过衬底的导电通孔垂直对准，以将辐射元件连接到接地平面。每个层在特定信号频率下呈现为E场的一系列并联谐振L-C电路，导致该频率处的高阻抗表面。新结构可用作微带贴片天线的基板，以在多个频率上提供谐振器和背板之间的最佳电距离。它也可以用于以一个极化或交叉极化传输多个信号频率信号的波导。作为波导，它保持近均匀的密度E和H场，导致波导横截面上的近似均匀的信号功率密度。

2. 发明授权

US06603357B1 Plane wave rectangular waveguide high impedance wall structure and amplifier using such a structure 失效
标题翻译：平面波矩形波导高阻抗壁结构和放大器采用这样的结构
公开(公告)号：US06603357B1
公开(公告)日：2003-08-05
申请号：US09408992
申请日：1999-09-29
申请人： John A. Higgins , Moonil Kim , Jonathan Bruce Hacker
发明人： John A. Higgins , Moonil Kim , Jonathan Bruce Hacker
IPC分类号： H03F360
CPC分类号： H01P3/122 , H01Q3/46 , H01Q15/008 , H01Q15/22
摘要： An improved waveguide wall structure and improved waveguide using the new wall structure as the interior walls of the waveguide. The wall structure comprises a sheet of dielectric material, a series of parallel conductive strips on one side of the dielectric material and a layer of conductive material on the other side. Multiple conductive vias are also included through the dielectric material and between the conductive layer and conductive strips. The new wall structure presents as a series of parallel L-C circuits to a transverse E field at resonant frequency, resulting in a high impedance surface. The wall structure can be used in waveguides that transmit a signal in one polarization or signals that are cross polarized. The new waveguide maintains a near uniform density E field and H field component, resulting in near uniform signal power density across the waveguide cross section.
摘要翻译：改进的波导壁结构和改进的波导使用新的壁结构作为波导的内壁。壁结构包括电介质材料片，电介质材料一侧上的一系列平行导电条和另一侧的导电材料层。还通过电介质材料以及导电层和导电带之间还包括多个导电孔。新的壁结构以共振频率呈现为一系列平行L-C电路到横向E场，导致高阻抗表面。壁结构可以用于传输一个极化信号的波导或交叉极化的信号。新的波导保持近均匀的密度E场和H场分量，导致波导横截面上的近似均匀的信号功率密度。

3. 发明授权

US06628242B1 High impedence structures for multifrequency antennas and waveguides 失效
标题翻译：多频天线和波导的高阻抗结构
公开(公告)号：US06628242B1
公开(公告)日：2003-09-30
申请号：US09644876
申请日：2000-08-23
申请人： Jonathan Bruce Hacker , Moonil Kim , John A. Higgins
发明人： Jonathan Bruce Hacker , Moonil Kim , John A. Higgins
IPC分类号： H01Q1523
CPC分类号： H01P3/12 , H01P1/2005 , H01Q9/0414 , H01Q15/008 , H01Q15/23 , H01Q21/061
摘要： A multi layered high impedance structure presents a high impedance to multiple frequency signals, with a different frequency for each layer. Each layer comprises a dielectric substrate, and an array of radiating elements such as parallel conductive strips or conductive patches on the substrate's top surface with a conductive layer on the bottom surface of the bottommost layer. The radiating elements of succeeding layers are vertically aligned with conductive vias extending through the substrates to connect the radiating elements to the ground plane. Each layer presents as a series of parallel resonant L-C circuits to an E field at a particular signal frequency, resulting in a high impedance surface at that frequency. The new structure can be used as the substrate for a microstrip patch antenna to provide an optimal electrical distance between the resonator and backplane at multiple frequencies. It can also be used in waveguides that transmit multiple signal frequencies signals in one polarization or that are cross-polarized. As a waveguide it maintains a near-uniform density E and H fields, resulting in near uniform signal power density across the waveguide's cross-section.
摘要翻译：多层高阻抗结构对多个频率信号呈现高阻抗，每层具有不同的频率。每个层包括电介质基底，以及在基底顶表面上的辐射元件阵列，例如平行的导电条或导电贴片，在最底层的底表面上具有导电层。后续层的辐射元件与延伸穿过衬底的导电通孔垂直对准，以将辐射元件连接到接地平面。每个层在特定信号频率下呈现为E场的一系列并联谐振L-C电路，导致该频率处的高阻抗表面。新结构可用作微带贴片天线的基板，以在多个频率上提供谐振器和背板之间的最佳电距离。它也可以用于以一个极化或交叉极化传输多个信号频率信号的波导。作为波导，它保持近均匀的密度E和H场，导致波导横截面上的近似均匀的信号功率密度。

4. 发明授权

US06949776B2 Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating 有权
标题翻译：具有介质辅助平面化触点的异质结双极晶体管及其制造方法
公开(公告)号：US06949776B2
公开(公告)日：2005-09-27
申请号：US10256042
申请日：2002-09-26
申请人： Richard L. Pierson, Jr. , James Chingwei Li , Berinder P. S. Brar , John A. Higgins
发明人： Richard L. Pierson, Jr. , James Chingwei Li , Berinder P. S. Brar , John A. Higgins
IPC分类号： H01L21/331 , H01L29/737 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/66318 , H01L29/7371 , Y10S438/978
摘要： A heterojunction bipolar transistor (HBT) is disclosed that includes successive emitter, base and collector and sub-collector epitaxial layers and emitter, base and collector contact metals contacting the emitter, base and sub-collector layers respectively. A passivation material is included that covers the uncovered portions of the layers and covers substantially all of the contact metals. The passivation material has a planar surface and a portion of each of the contact metals protrudes from the surface. Planar metals are included on the planar surface, each being isolated from the others and in electrical contact with a respective contact metal. A method for fabricating an HBT is also disclosed, wherein successive emitter, base, collector and sub-collector epitaxial layers are deposited on a substrate, with the substrate being adjacent to the sub-collector layer. The epitaxial layers are etched to provide locations for contact metals and emitter, base and contact metals are deposited on the emitter, base and sub-collector epitaxial layers, respectively. A self-alignment material is deposited on the surface of the substrate around the epitaxial layers and a planarization material is deposited on and covers the top surface of the HBT. The planarization material is then etched so it has a planar surface about the same level as the surface of the self-alignment material and the contact metals protrude from the planar surface. The planar metals are then deposited over the protruding portions of the contact metals.
摘要翻译：公开了一种异质结双极晶体管（HBT），其包括连续的发射极，基极和集电极和子集电极外延层以及分别与发射极，基极和子集电极层接触的发射极，基极和集电极接触金属。包括钝化材料，其覆盖层的未覆盖部分并覆盖基本上所有的接触金属。钝化材料具有平坦表面，并且每个接触金属的一部分从表面突出。平面金属包括在平面表面上，每个与其它表面分离，并与相应的接触金属电接触。还公开了制造HBT的方法，其中连续的发射极，基极，集电极和亚集电极外延层沉积在衬底上，衬底与子集电极层相邻。外延层被蚀刻以提供用于接触金属和发射极的位置，基极和接触金属分别沉积在发射极，基极和次集电极外延层上。自对准材料沉积在外延层周围的衬底表面上，平坦化材料沉积在HBT的顶表面上并覆盖其上表面。然后对平坦化材料进行蚀刻，使其具有与自对准材料的表面大致相同的平面，并且接触金属从平坦表面突出。然后将平面金属沉积在接触金属的突出部分上。

5. 发明授权

US5522553A Method and apparatus for producing liquid suspensions of finely divided matter 失效
标题翻译：用于生产细碎物质的液体悬浮液的方法和装置
公开(公告)号：US5522553A
公开(公告)日：1996-06-04
申请号：US314817
申请日：1994-09-29
申请人： Mark L. LeClair , John A. Higgins
发明人： Mark L. LeClair , John A. Higgins
IPC分类号： B02C18/06 , B02C18/40
CPC分类号： B02C18/062 , B02C18/0092
摘要： A device for producing suspensions of finely divided matter includes a dispersion mill of the type with a slotted rotor and stator. The stator has chamfers on the leading edges to permit fluid flow from the rotor into the stator which is longer in duration, of greater volume, and along a path resulting in an impact angle of 90 degrees. The impact angle generates stagnation forces of a magnitude that results in cavitation when the fluid accelerates away from the impact zone. Subsequent discharges of fluid from rotor to stator slot creates increased ambient pressure around the vapor cavity accelerating cavity collapse and generating high pressures through accelerated collapse and through reentrant jet effects. Shock waves are transmitted locally which disintegrate particulates such as cells.
摘要翻译：用于生产细碎物质的悬浮液的装置包括具有开槽转子和定子的类型的分散机。定子在前缘上具有倒角，以允许流体从转子流入定子，其持续时间更长，体积更大，并且沿着导致90度冲击角的路径。冲击角度产生一定幅度的停滞力，导致当流体从冲击区域加速时导致气蚀。随后将流体从转子排出到定子槽，在蒸气腔周围产生增加的环境压力，从而加速腔体的塌陷，并通过加速的塌陷和通过可重入的喷射效应产生高压。冲击波是局部传输的，其分解颗粒如细胞。

6. 发明授权

US07354820B2 Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating 有权
标题翻译：具有介质辅助平面化触点的异质结双极晶体管及其制造方法
公开(公告)号：US07354820B2
公开(公告)日：2008-04-08
申请号：US11227858
申请日：2005-09-14
申请人： Richard L. Pierson, Jr. , James Chingwei Li , Berinder P. S. Brar , John A. Higgins
发明人： Richard L. Pierson, Jr. , James Chingwei Li , Berinder P. S. Brar , John A. Higgins
IPC分类号： H01L21/8249
CPC分类号： H01L29/66318 , H01L29/7371 , Y10S438/978
摘要： A method for fabricating an HBT is disclosed, wherein successive emitter, base, collector and sub-collector epitaxial layers are deposited on a substrate, with the substrate being adjacent to the sub-collector layer. The epitaxial layers are etched to provide locations for contact metals and emitter, base and contact metals are deposited on the emitter, base and sub-collector epitaxial layers, respectively. A self-alignment material is deposited on the surface of the substrate around the epitaxial layers and a planarization material is deposited on and covers the top surface of the HBT. The planarization material is then etched so it has a planar surface about the same level as the surface of the self-alignment material and the contact metals protrude from the planar surface. The planar metals are then deposited over the protruding portions of the contact metals.
摘要翻译：公开了一种用于制造HBT的方法，其中连续的发射极，基极，集电极和次集电极外延层沉积在衬底上，衬底与子集电极层相邻。外延层被蚀刻以提供用于接触金属和发射极的位置，基极和接触金属分别沉积在发射极，基极和次集电极外延层上。自对准材料沉积在外延层周围的衬底表面上，平坦化材料沉积在HBT的顶表面上并覆盖其上表面。然后对平坦化材料进行蚀刻，使其具有与自对准材料的表面大致相同的平面，并且接触金属从平坦表面突出。然后将平面金属沉积在接触金属的突出部分上。

7. 发明授权

US07268650B2 Phase shifting waveguide with alterable impedance walls 失效
标题翻译：具有可变阻抗壁的相移波导
公开(公告)号：US07268650B2
公开(公告)日：2007-09-11
申请号：US11392274
申请日：2006-03-28
申请人： John A. Higgins
发明人： John A. Higgins
IPC分类号： H01P3/12
CPC分类号： H01Q3/46 , H01P1/182 , H01P1/185 , H01Q15/04
摘要： A waveguide is disclosed that shifts the phase of the signal passing through it. In one embodiment, the waveguide has an impedance structure on its walls that resonates at a frequency lower than the frequency of the signal passing through the waveguide. This causes the structure to present a capacitive impedance to the signal, increasing its propagation constant and shifting its phase. Another embodiment of the new waveguide has impedance structures on its wall that are voltage controlled to change the frequency at which the impedance structures resonate. The range of frequencies at which the structure can resonate is below the frequency of the signal passing through the waveguide. This allows the waveguide cause a adjust the shift in the phase of its signal. An amplifier array can be included in the waveguides to amplify the signal. A module can be constructed of the new waveguides and placed in the path of a millimeter beam. A portion of the beam passes through the waveguides and the beam can be shifted or steered depending on the phase shift through each waveguide.
摘要翻译：公开了一种使通过它的信号的相位移动的波导。在一个实施例中，波导在其壁上具有以比通过波导的信号的频率低的频率谐振的阻抗结构。这导致结构向信号呈现电容性阻抗，增加其传播常数并使其相位移动。新波导的另一实施例在其壁上具有阻抗结构，其被电压控制以改变阻抗结构共振的频率。结构可以谐振的频率范围低于通过波导的信号的频率。这允许波导引起调整其信号的相位的偏移。可以在波导中包括放大器阵列以放大信号。模块可以由新的波导构成并放置在毫米波束的路径中。光束的一部分通过波导，并且可以根据穿过每个波导的相移来移动或转向光束。

8. 发明授权

US06992549B2 Shutter switch for millimeter wave beams and method for switching 有权
标题翻译：用于毫米波束的快门开关和切换方法
公开(公告)号：US06992549B2
公开(公告)日：2006-01-31
申请号：US10771820
申请日：2004-02-03
申请人： John A. Higgins
发明人： John A. Higgins
IPC分类号： H01P1/10
CPC分类号： H01Q15/00
摘要： A shutter switch is disclosed and placed in the path of a millimeter beam and is either opaque or transparent to the beam. The shutter switch comprises a number of waveguides placed adjacent to one another to intercept the beam, a portion of the beam passing through each waveguide. The dimensions of each waveguide are such that transmission of the respective portion of the beam would be cut-off if all of the waveguide walls were conductive. However, the waveguides have high impedance structures on at least two of their opposing interior walls that allow the beam at the design frequency to be transmitted through the waveguide with uniform density and minimal attenuation. At this design frequency the shutter switch is essentially transparent to the beam. Each of the high impedance structures can also be changed to a conductive surfaces such that all of the waveguide walls appear conductive and the waveguide takes on the characteristics of a metal rectangular waveguide. In this state transmission through each waveguide is cut-off and the shutter switch blocks transmission of the beam. The shutter switch can change states from blocking to transparent in microseconds or less while consuming very little power.
摘要翻译：公开了一种快门开关并将其放置在毫米波束的路径中，并且对于波束是不透明的或透明的。快门开关包括彼此相邻放置的多个波导，以拦截光束，光束的一部分通过每个波导。每个波导的尺寸使得如果所有的波导壁都是导电的，则波束的相应部分的传输将被切断。然而，波导在其相对的内壁中的至少两个上具有高阻抗结构，允许以设计频率的光束以均匀的密度和最小的衰减传输通过波导。在这种设计频率下，快门开关对光束基本上是透明的。每个高阻抗结构也可以改变为导电表面，使得所有的波导壁看起来都是导电的，并且波导具有金属矩形波导的特性。在这种状态下，通过每个波导的传输被切断，并且快门开关阻止光束的传输。快门开关可以在几秒或更少的时间内将状态从阻塞改变为透明，同时消耗很少的功率。

9. 发明授权

US5663693A Dielectric waveguide power combiner 失效
标题翻译：介质波导功率组合器
公开(公告)号：US5663693A
公开(公告)日：1997-09-02
申请号：US521694
申请日：1995-08-31
申请人： Glenn R. Doughty , John A. Higgins , Richard L. Kaiser , Sam K. Buchmeyer
发明人： Glenn R. Doughty , John A. Higgins , Richard L. Kaiser , Sam K. Buchmeyer
IPC分类号： H01P5/12 , H01P5/18
CPC分类号： H01P5/182 , H01P5/12
摘要： A transmission medium consists of a dielectric waveguide shielded by a metal guide. The guide is particularly suitable for providing low insertion loss, convenient transfer of power from one such transmission line to another and for the trouble free handling of high power levels at many hundreds of watts. This type of transmission medium may be used to provide low loss combination of power signals that is low loss, compact while containing the solid state power amplifying elements (MMICs) and capable of high power.
摘要翻译：传输介质由金属引导件屏蔽的电介质波导组成。该指南特别适用于提供低插入损耗，便于将功率从一个这样的传输线路传输到另一个，并且在数百瓦特的高功率水平下无故障地处理。这种类型的传输介质可以用于提供低损耗，紧凑的功率信号的低损耗组合，同时包含固态功率放大元件（MMIC）并且能够实现高功率。

10. 发明申请

US20070285873A1 Variable charge packet integrated circuit capacitor 有权
标题翻译：可变电荷分组集成电路电容器
公开(公告)号：US20070285873A1
公开(公告)日：2007-12-13
申请号：US11452000
申请日：2006-06-12
申请人： John A. Higgins
发明人： John A. Higgins
IPC分类号： H01G4/228
CPC分类号： H01L29/93 , H01L27/0808 , H01L29/872
摘要： A variable IC capacitor includes a semiconductor layer doped to contain mobile charge carriers. Capacitor electrodes C1 and C2 are disposed adjacent to each other on the layer's surface, gate electrodes G1 and G2 are disposed on opposite sides of C1 and C2, and source and sink electrodes are disposed on opposite sides of G1 and G2. Potentials are applied to the electrodes as needed to inject and then confine a finite charge into the region under C1 and C2. A drive voltage V applied between C1 and C2 causes the charge packet to move back and forth beneath them, such that the effective capacitance C seen by drive voltage V is given by C=Q/V, where Q is the magnitude of the charge packet.
摘要翻译：可变IC电容器包括掺杂以包含移动电荷载流子的半导体层。电容电极C 1和C 2在层的表面上彼此相邻地设置，栅电极G 1和G 2设置在C 1和C 2的相对侧上，并且源极和接收电极设置在G 1的相对侧和G 2。根据需要将电位施加到电极上，然后将有限电荷限制在C 1和C 2下的区域中。施加在C 1和C 2之间的驱动电压V使得电荷包在它们之下来回移动，使得由驱动电压V所见的有效电容C由C = Q / V给出，其中Q是充电包。

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