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    • 6. 发明授权
    • Apparatus and method for repairing electronic packages
    • 用于修理电子封装的装置和方法
    • US06713686B2
    • 2004-03-30
    • US10053362
    • 2002-01-18
    • Wiren D. BeckerDinesh GuptaSudipta K. RayRobert A. RitaHerbert I. StollerKathleen M. Wiley
    • Wiren D. BeckerDinesh GuptaSudipta K. RayRobert A. RitaHerbert I. StollerKathleen M. Wiley
    • H01R1204
    • H01L23/5382H01L2924/0002H01L2924/09701H05K1/0292H05K1/113Y10T29/49155H01L2924/00
    • A multi chip module substrate arranged with repair vias and repair lines extending between repair vias of the chip sites of the module by which repairs can be effected to overcome defects in the module circuits and a method for effecting the repairs of defects in the circuits of this module. A defect can occur in any one of a first signal via, a second signal via, and a circuit line extending between and intended to electrically connect the first signal via and the second signal via. After a defective circuit is identified, the signal vias of the circuit are isolated. Then, the first signal via of the defective circuit is electrically connected to that repair via of the chip site having the first signal via that is connected to that repair via of the chip site having the second signal via and the second signal via of the defective circuit is electrically connected to that repair via of the chip site having the second signal via that is connected to that repair via of the chip site having the first signal via.
    • 多芯片模块基板,其布置有在模块的芯片位置的修复通道之间延伸的修理通孔和修复线,通过该维修线可以进行修理以克服模块电路中的缺陷,以及用于实现该电路中的缺陷的修复的方法 模块。 在第一信号通孔,第二信号通孔以及在第一信号通孔和第二信号通孔之间延伸并且用于电连接第一信号通孔的电路线中的任何一个中可能会发生缺陷。 识别出故障电路后,电路的信号通孔被隔离。 然后,故障电路的第一信号通路经由具有第一信号的芯片位置的修复通孔经由与具有第二信号通路的芯片位置的修复通路连接,并且具有缺陷电路的第二信号通孔 电路经由具有第二信号的芯片位置的修复通路经由与经由具有第一信号通孔的芯片位置的修复通路相连接。
    • 10. 发明授权
    • Decoupling capacitor method and structure using metal based carrier
    • 使用金属载体去耦电容器的方法和结构
    • US06461493B1
    • 2002-10-08
    • US09472136
    • 1999-12-23
    • Mukta S. FarooqShaji FarooqJohn U. KnickerbockerRobert A. RitaSrinivasa N. Reddy
    • Mukta S. FarooqShaji FarooqJohn U. KnickerbockerRobert A. RitaSrinivasa N. Reddy
    • C25D502
    • H05K3/445H01G4/10H05K1/053H05K1/162H05K3/4069H05K2201/09554H05K2203/0315H05K2203/1142
    • A process for fabricating a structure using a metal carrier and forming a double capacitor structure. The process comprises forming a first via hole through the metal carrier, forming a dielectric layer around the metal carrier and inside the first via hole, forming a second via hole through the dielectric layer and the metal carrier, and filling at least one of the via holes with conductive material. In one preferred embodiment, the process further comprises forming a third via hole through the metal carrier before the forming of a dielectric layer, wherein the dielectric layer is formed around the metal carrier, inside the first via hole, and inside the third via hole. The first via hole, the second via hole, and the third via hole are all filled with a conductive material. In one preferred embodiment, the dielectric layer comprises a top surface opposed to a bottom surface, and electrodes are formed on at least one of the top surface and the bottom surface of the dielectric layer.
    • 一种使用金属载体制造结构并形成双电容器结构的方法。 该工艺包括形成通过金属载体的第一通孔,在金属载体周围形成电介质层,并在第一通孔内部形成介电层,形成穿过电介质层和金属载体的第二通孔,并填充至少一个通孔 孔与导电材料。 在一个优选实施例中,该方法还包括在形成电介质层之前通过金属载体形成第三通孔,其中介电层围绕金属载体形成在第一通孔的内部,以及在第三通孔的内部。 第一通孔,第二通孔和第三通孔均填充有导电材料。 在一个优选实施例中,电介质层包括与底表面相对的顶表面,并且在介电层的顶表面和底表面中的至少一个上形成电极。