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1. 发明授权

US5552232A Aluminum nitride body having graded metallurgy 失效
公开(公告)号：US5552232A
公开(公告)日：1996-09-03
申请号：US361351
申请日：1994-12-21
申请人： Jon A. Casey , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Jonathan H. Harris , Lester W. Herron , Gregory M. Johnson , Niranjan M. Patel , Andrew M. Reitter , Subhash L. Shinde , Rao V. Vallabhaneni , Robert A. Youngman
发明人： Jon A. Casey , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Jonathan H. Harris , Lester W. Herron , Gregory M. Johnson , Niranjan M. Patel , Andrew M. Reitter , Subhash L. Shinde , Rao V. Vallabhaneni , Robert A. Youngman
IPC分类号： B32B18/00 , B22F7/02 , C04B35/581 , C04B37/02 , C04B41/51 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/48 , H01L23/373 , H05K1/03 , H05K3/24 , H05K3/40 , H05K3/46 , B22F3/00
CPC分类号： C04B41/009 , B22F7/02 , C04B41/5133 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/4846 , H01L21/486 , H01L23/3731 , H05K3/4061 , B22F2998/00 , C04B2111/00405 , C04B2111/00844 , H01L2924/0002 , H05K1/0306 , H05K2201/035 , H05K2201/09981 , H05K3/248 , H05K3/4611 , H05K3/4629 , Y10S428/901 , Y10T428/12021 , Y10T428/12028 , Y10T428/12056 , Y10T428/31678
摘要： Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

2. 发明授权

US5552107A Aluminum nitride body having graded metallurgy 失效
标题翻译：具有分级冶金的氮化铝体
公开(公告)号：US5552107A
公开(公告)日：1996-09-03
申请号：US437494
申请日：1995-05-09
申请人： Jon A. Casey , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Jonathan H. Harris , Lester W. Herron , Gregory M. Johnson , Niranjan M. Patel , Andrew M. Reitter , Subhash L. Shinde , Rao V. Vallabhaneni , Robert A. Youngman
发明人： Jon A. Casey , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Jonathan H. Harris , Lester W. Herron , Gregory M. Johnson , Niranjan M. Patel , Andrew M. Reitter , Subhash L. Shinde , Rao V. Vallabhaneni , Robert A. Youngman
IPC分类号： B32B18/00 , B22F7/02 , C04B35/581 , C04B37/02 , C04B41/51 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/48 , H01L23/373 , H05K1/03 , H05K3/24 , H05K3/40 , H05K3/46
CPC分类号： C04B41/009 , B22F7/02 , C04B41/5133 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/4846 , H01L21/486 , H01L23/3731 , H05K3/4061 , B22F2998/00 , C04B2111/00405 , C04B2111/00844 , H01L2924/0002 , H05K1/0306 , H05K2201/035 , H05K2201/09981 , H05K3/248 , H05K3/4611 , H05K3/4629 , Y10S428/901 , Y10T428/12021 , Y10T428/12028 , Y10T428/12056 , Y10T428/31678
摘要： Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.
摘要翻译：公开了一种具有分级冶金的氮化铝体及其制造方法。氮化铝体具有至少一个通孔，并且包括与氮化铝体直接接触的第一层和与第一层直接接触并完全封装的第二层。第一层包括30至60体积％的氮化铝和40至70体积％的钨和/或钼，而第二层包括90至100体积％的钨和/或钼和0至10体积％的氮化铝。

3. 发明授权

US06306528B1 Method for the controlling of certain second phases in aluminum nitride 失效
标题翻译：用于控制氮化铝中某些第二相的方法
公开(公告)号：US06306528B1
公开(公告)日：2001-10-23
申请号：US09311812
申请日：1999-05-13
申请人： Richard A. Bates , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Lester W. Herron , Gregory M. Johnson , Andrew Reitter , Subhash L. Shinde , Lisa Studzinski
发明人： Richard A. Bates , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Lester W. Herron , Gregory M. Johnson , Andrew Reitter , Subhash L. Shinde , Lisa Studzinski
IPC分类号： B32B1800
CPC分类号： C04B41/009 , C04B41/5133 , C04B41/88 , C04B2111/00844 , H01L23/15 , H01L2924/0002 , H05K1/0306 , H05K1/092 , Y10T428/265 , C04B41/4539 , C04B41/4556 , C04B41/4578 , C04B41/5032 , C04B41/526 , C04B35/581 , H01L2924/00
摘要： Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.
摘要翻译：用橡皮布金属覆盖面积百分比高的电子封装可能容易产生某些种类的陶瓷缺陷。在氮化铝中，这些缺陷可能与液体烧结助剂的分解有关。在该实验中，金属化的独特添加防止了某些陶瓷缺陷的形成。我们的方法涉及在现有过程中使用的独特组合。

4. 发明授权

US06200373B1 Method for controlling of certain second phases in aluminum nitride 失效
标题翻译：用于控制氮化铝中某些第二相的方法
公开(公告)号：US06200373B1
公开(公告)日：2001-03-13
申请号：US09311811
申请日：1999-05-13
申请人： Richard A. Bates , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Lester W. Herron , Gregory M. Johnson , Andrew Reitter , Subhash L. Shinde , Lisa Studzinski
发明人： Richard A. Bates , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Lester W. Herron , Gregory M. Johnson , Andrew Reitter , Subhash L. Shinde , Lisa Studzinski
IPC分类号： B32B1700
CPC分类号： C04B41/009 , C04B41/5133 , C04B41/88 , C04B2111/00844 , H01L23/15 , H01L2924/0002 , H05K1/0306 , H05K1/092 , Y10T428/265 , C04B41/4539 , C04B41/4556 , C04B41/4578 , C04B41/5032 , C04B41/526 , C04B35/581 , H01L2924/00
摘要： Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.
摘要翻译：用橡皮布金属覆盖面积百分比高的电子封装可能容易产生某些种类的陶瓷缺陷。在氮化铝中，这些缺陷可能与液体烧结助剂的分解有关。在该实验中，金属化的独特添加防止了某些陶瓷缺陷的形成。我们的方法涉及在现有过程中使用的独特组合。

5. 发明授权

US6004624A Method for the controlling of certain second phases in aluminum nitride 失效
标题翻译：用于控制氮化铝中某些第二相的方法
公开(公告)号：US6004624A
公开(公告)日：1999-12-21
申请号：US887375
申请日：1997-07-02
申请人： Richard A. Bates , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Lester W. Herron , Gregory M. Johnson , Andrew Reitter , Subhash L. Shinde , Lisa Studzinski
发明人： Richard A. Bates , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Lester W. Herron , Gregory M. Johnson , Andrew Reitter , Subhash L. Shinde , Lisa Studzinski
IPC分类号： C04B41/51 , C04B41/88 , H01L23/15 , H05K1/03 , H05K1/09 , B05D3/02 , B05D1/36
CPC分类号： C04B41/009 , C04B41/5133 , C04B41/88 , H01L23/15 , C04B2111/00844 , H01L2924/0002 , H05K1/0306 , H05K1/092 , Y10T428/265
摘要： Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.
摘要翻译：用橡皮布金属覆盖面积百分比高的电子封装可能容易产生某些种类的陶瓷缺陷。在氮化铝中，这些缺陷可能与液体烧结助剂的分解有关。在该实验中，金属化的独特添加防止了某些陶瓷缺陷的形成。我们的方法涉及在现有过程中使用的独特组合。

6. 发明授权

US6117367A Pastes for improved substrate dimensional control 失效
标题翻译：用于改善基材尺寸控制的糊剂
公开(公告)号：US6117367A
公开(公告)日：2000-09-12
申请号：US21045
申请日：1998-02-09
申请人： Raschid J. Bezama , Michael A. Cohn , Benjamin V. Fasano , Gregory M. Johnson , Robert A. Rita , Rao V. Vallabhaneni , Nancy A. Wier-Cavalieri
发明人： Raschid J. Bezama , Michael A. Cohn , Benjamin V. Fasano , Gregory M. Johnson , Robert A. Rita , Rao V. Vallabhaneni , Nancy A. Wier-Cavalieri
IPC分类号： H05K3/46 , C09D5/24 , H01B1/16 , H01B1/22 , H01L23/498 , H05K1/09 , H01B1/02 , H01C1/02
CPC分类号： H01L23/49883 , H01B1/16 , H01B1/22 , H01L24/16 , H01L24/17 , H01L2224/16 , H01L2924/00014 , H01L2924/09701 , H01L2924/14 , H01L2924/15787 , H05K1/092
摘要： Metal pastes used in the fabrication of multilayer ceramic (MLC) substrates used in semiconductor devices. The pastes reduce substrate defects, such as via bulge and camber. The pastes are comprised of a metal having high conductivity, frit which includes glass, an organic binder, and a solvent, optionally with a surfactant.
摘要翻译：用于制造半导体器件中使用的多层陶瓷（MLC）基板的金属浆料。糊剂可减少底物缺陷，例如通过凸起和弯度。糊料由具有高导电性的金属组成，玻璃料包括玻璃，有机粘合剂和溶剂，任选地含有表面活性剂。

7. 发明授权

US5628849A Method for in-situ environment sensitive sealing and/or product controlling 失效
标题翻译：用于原位环境敏感密封和/或产品控制的方法
公开(公告)号：US5628849A
公开(公告)日：1997-05-13
申请号：US451933
申请日：1995-05-26
申请人： Benjamin V. Fasano , Johnathan S. Fish , Gregory M. Johnson , Subhash L. Shinde
发明人： Benjamin V. Fasano , Johnathan S. Fish , Gregory M. Johnson , Subhash L. Shinde
IPC分类号： C04B35/638 , B22F3/10 , F27D1/18 , F27D5/00 , B32B9/00 , C03B29/00 , C04B33/34
CPC分类号： F27D5/0068 , F27D5/0037 , F27D99/0073 , F27D1/18
摘要： A single furnace loading cycle technique and a ventable sintering box therefor are disclosed for the sintering of products, such as, ceramic substrates. The sintering box includes a closeable cover which is held open by collapsible or deformable or sensitive spacers in a first furnace temperature range. The sensitive spacers collapse or deform in a higher temperature range to seal closed the box and the substrates therein. Additional spacers may be used for applying weight upon the substrates at the higher temperature range. Thus, volatile agents within the substrates are permitted to escape in the first temperature range but are prevented from escaping in the higher temperature range and in situ sintering weights can be applied without removing the substrates from the furnace.
摘要翻译：公开了一种单炉加载循环技术及其可通气烧结盒，用于陶瓷衬底等产品的烧结。烧结箱包括在第一炉温度范围内由可折叠或可变形或敏感的隔离物保持打开的可关闭盖。敏感间隔件在更高的温度范围内崩溃或变形，以密封箱体和其中的基板。可以使用附加的间隔物来在较高温度范围的基底上施加重量。因此，允许基板内的挥发性物质在第一温度范围内逸出，但是在较高温度范围内可防止其逸出，并且可以施加原位烧结重量而不从炉中移走基板。

8. 发明授权

US06262357B1 Thermoelectric devices and methods for making the same 失效
标题翻译：热电器件及其制造方法
公开(公告)号：US06262357B1
公开(公告)日：2001-07-17
申请号：US09543269
申请日：2000-04-05
申请人： Gregory M. Johnson , Jon A. Casey , Scott R. Dwyer , David C. Long , Kevin M. Prettyman
发明人： Gregory M. Johnson , Jon A. Casey , Scott R. Dwyer , David C. Long , Kevin M. Prettyman
IPC分类号： H01L3528
CPC分类号： H01L23/38 , H01L35/32 , H01L2224/16225 , H01L2224/48091 , H01L2924/00014 , H01L2924/09701 , H01L2224/0401
摘要： Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. Methods for forming tunnels through lamination and etching are employed. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste. Alternating semiconducting materials may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. A liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.
摘要翻译：具有增强的热特性的热电装置使用多层陶瓷（MLC）技术方法制造。具有嵌入式电连接的氮化铝面板为交替的不同的半导体材料提供了电气串联配置。嵌入式电气连接由面板中的通孔和线形成。采用通过层压和蚀刻形成隧道的方法。然后将不同材料的一部分在隧道内熔化以形成粘结。通过向一个表面添加电隔离的通孔，填充高导热性金属膏，增强了面板的导热性。在两个高导热材料面板之间还引入低导热材料。通过在预定导热率的孔内冲压通孔并填充n型和p型浆料，将不同的导热层引入异构半导体材料。交替的半导体材料还可以通过屏蔽技术和线结构的层叠来以线性或径向扇出图案图案化。面板内的液体通道用于增强热能传递。热电器件使用MLC技术物理地并入IC封装内。

9. 发明授权

US06278049B1 Thermoelectric devices and methods for making the same 失效
标题翻译：热电器件及其制造方法
公开(公告)号：US06278049B1
公开(公告)日：2001-08-21
申请号：US09543689
申请日：2000-04-05
申请人： Gregory M. Johnson , Jon A. Casey , Scott R. Dwyer , David C. Long , Kevin M. Prettyman
发明人： Gregory M. Johnson , Jon A. Casey , Scott R. Dwyer , David C. Long , Kevin M. Prettyman
IPC分类号： H01L3534
CPC分类号： H01L23/38 , H01L35/32 , H01L2224/16225 , H01L2224/48091 , H01L2924/00014 , H01L2924/09701 , H01L2224/0401
摘要： Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste or may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. a liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.
摘要翻译：具有增强的热特性的热电装置使用多层陶瓷（MLC）技术方法制造。具有嵌入式电连接的氮化铝面板为交替的不同的半导体材料提供了电气串联配置。嵌入式电气连接由面板中的通孔和线形成。然后将不同材料的一部分在隧道内熔化以形成粘结。通过向一个表面添加电隔离的通孔，填充高导热性金属膏，增强了面板的导热性。在两个高导热材料面板之间也引入低导热材料。交替的半导体材料通过在预定导热率的孔内冲压通孔并填充n型和p型浆料而引入到变化的导热层内，或者还可以通过筛选技术和线结构的层压线性或径向扇出图案。面板内的液体通道用于增强热能传递。使用MLC技术将热电器件物理地并入IC封装。

10. 发明授权

US6121539A Thermoelectric devices and methods for making the same 失效
标题翻译：热电器件及其制造方法
公开(公告)号：US6121539A
公开(公告)日：2000-09-19
申请号：US141481
申请日：1998-08-27
申请人： Gregory M. Johnson , Jon A. Casey , Scott R. Dwyer , David C. Long , Kevin M. Prettyman
发明人： Gregory M. Johnson , Jon A. Casey , Scott R. Dwyer , David C. Long , Kevin M. Prettyman
IPC分类号： H01L23/38 , H01L35/32 , H01L35/28
CPC分类号： H01L23/38 , H01L35/32 , H01L2224/16225 , H01L2224/48091 , H01L2924/00014 , H01L2924/09701
摘要： Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. Methods are employed for forming tunnels through lamination and etching. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste. Alternating semiconducting materials may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. A liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.
摘要翻译：具有增强的热特性的热电装置使用多层陶瓷（MLC）技术方法制造。具有嵌入式电连接的氮化铝面板为交替的不同的半导体材料提供了电气串联配置。嵌入式电气连接由面板中的通孔和线形成。采用层压法和蚀刻法形成隧道的方法。然后将不同材料的一部分在隧道内熔化以形成粘结。通过向一个表面添加电隔离的通孔，填充高导热性金属膏，增强了面板的导热性。在两个高导热材料面板之间也引入低导热材料。交替的半导体材料通过在预定导热率的孔内冲压通孔并填充n型和p型浆料而在不同的导热层内引入。交替的半导体材料还可以通过屏蔽技术和线结构的层叠来以线性或径向扇出图案图案化。面板内的液体通道用于增强热能传递。使用MLC技术将热电器件物理地并入IC封装。

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