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1. 发明授权

US06262357B1 Thermoelectric devices and methods for making the same 失效
标题翻译：热电器件及其制造方法
公开(公告)号：US06262357B1
公开(公告)日：2001-07-17
申请号：US09543269
申请日：2000-04-05
申请人： Gregory M. Johnson , Jon A. Casey , Scott R. Dwyer , David C. Long , Kevin M. Prettyman
发明人： Gregory M. Johnson , Jon A. Casey , Scott R. Dwyer , David C. Long , Kevin M. Prettyman
IPC分类号： H01L3528
CPC分类号： H01L23/38 , H01L35/32 , H01L2224/16225 , H01L2224/48091 , H01L2924/00014 , H01L2924/09701 , H01L2224/0401
摘要： Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. Methods for forming tunnels through lamination and etching are employed. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste. Alternating semiconducting materials may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. A liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.
摘要翻译：具有增强的热特性的热电装置使用多层陶瓷（MLC）技术方法制造。具有嵌入式电连接的氮化铝面板为交替的不同的半导体材料提供了电气串联配置。嵌入式电气连接由面板中的通孔和线形成。采用通过层压和蚀刻形成隧道的方法。然后将不同材料的一部分在隧道内熔化以形成粘结。通过向一个表面添加电隔离的通孔，填充高导热性金属膏，增强了面板的导热性。在两个高导热材料面板之间还引入低导热材料。通过在预定导热率的孔内冲压通孔并填充n型和p型浆料，将不同的导热层引入异构半导体材料。交替的半导体材料还可以通过屏蔽技术和线结构的层叠来以线性或径向扇出图案图案化。面板内的液体通道用于增强热能传递。热电器件使用MLC技术物理地并入IC封装内。

2. 发明授权

US06278049B1 Thermoelectric devices and methods for making the same 失效
标题翻译：热电器件及其制造方法
公开(公告)号：US06278049B1
公开(公告)日：2001-08-21
申请号：US09543689
申请日：2000-04-05
申请人： Gregory M. Johnson , Jon A. Casey , Scott R. Dwyer , David C. Long , Kevin M. Prettyman
发明人： Gregory M. Johnson , Jon A. Casey , Scott R. Dwyer , David C. Long , Kevin M. Prettyman
IPC分类号： H01L3534
CPC分类号： H01L23/38 , H01L35/32 , H01L2224/16225 , H01L2224/48091 , H01L2924/00014 , H01L2924/09701 , H01L2224/0401
摘要： Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste or may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. a liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.
摘要翻译：具有增强的热特性的热电装置使用多层陶瓷（MLC）技术方法制造。具有嵌入式电连接的氮化铝面板为交替的不同的半导体材料提供了电气串联配置。嵌入式电气连接由面板中的通孔和线形成。然后将不同材料的一部分在隧道内熔化以形成粘结。通过向一个表面添加电隔离的通孔，填充高导热性金属膏，增强了面板的导热性。在两个高导热材料面板之间也引入低导热材料。交替的半导体材料通过在预定导热率的孔内冲压通孔并填充n型和p型浆料而引入到变化的导热层内，或者还可以通过筛选技术和线结构的层压线性或径向扇出图案。面板内的液体通道用于增强热能传递。使用MLC技术将热电器件物理地并入IC封装。

3. 发明授权

US6121539A Thermoelectric devices and methods for making the same 失效
标题翻译：热电器件及其制造方法
公开(公告)号：US6121539A
公开(公告)日：2000-09-19
申请号：US141481
申请日：1998-08-27
申请人： Gregory M. Johnson , Jon A. Casey , Scott R. Dwyer , David C. Long , Kevin M. Prettyman
发明人： Gregory M. Johnson , Jon A. Casey , Scott R. Dwyer , David C. Long , Kevin M. Prettyman
IPC分类号： H01L23/38 , H01L35/32 , H01L35/28
CPC分类号： H01L23/38 , H01L35/32 , H01L2224/16225 , H01L2224/48091 , H01L2924/00014 , H01L2924/09701
摘要： Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. Methods are employed for forming tunnels through lamination and etching. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste. Alternating semiconducting materials may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. A liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.
摘要翻译：具有增强的热特性的热电装置使用多层陶瓷（MLC）技术方法制造。具有嵌入式电连接的氮化铝面板为交替的不同的半导体材料提供了电气串联配置。嵌入式电气连接由面板中的通孔和线形成。采用层压法和蚀刻法形成隧道的方法。然后将不同材料的一部分在隧道内熔化以形成粘结。通过向一个表面添加电隔离的通孔，填充高导热性金属膏，增强了面板的导热性。在两个高导热材料面板之间也引入低导热材料。交替的半导体材料通过在预定导热率的孔内冲压通孔并填充n型和p型浆料而在不同的导热层内引入。交替的半导体材料还可以通过屏蔽技术和线结构的层叠来以线性或径向扇出图案图案化。面板内的液体通道用于增强热能传递。使用MLC技术将热电器件物理地并入IC封装。

4. 发明授权

US5552232A Aluminum nitride body having graded metallurgy 失效
公开(公告)号：US5552232A
公开(公告)日：1996-09-03
申请号：US361351
申请日：1994-12-21
申请人： Jon A. Casey , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Jonathan H. Harris , Lester W. Herron , Gregory M. Johnson , Niranjan M. Patel , Andrew M. Reitter , Subhash L. Shinde , Rao V. Vallabhaneni , Robert A. Youngman
发明人： Jon A. Casey , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Jonathan H. Harris , Lester W. Herron , Gregory M. Johnson , Niranjan M. Patel , Andrew M. Reitter , Subhash L. Shinde , Rao V. Vallabhaneni , Robert A. Youngman
IPC分类号： B32B18/00 , B22F7/02 , C04B35/581 , C04B37/02 , C04B41/51 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/48 , H01L23/373 , H05K1/03 , H05K3/24 , H05K3/40 , H05K3/46 , B22F3/00
CPC分类号： C04B41/009 , B22F7/02 , C04B41/5133 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/4846 , H01L21/486 , H01L23/3731 , H05K3/4061 , B22F2998/00 , C04B2111/00405 , C04B2111/00844 , H01L2924/0002 , H05K1/0306 , H05K2201/035 , H05K2201/09981 , H05K3/248 , H05K3/4611 , H05K3/4629 , Y10S428/901 , Y10T428/12021 , Y10T428/12028 , Y10T428/12056 , Y10T428/31678
摘要： Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

5. 发明授权

US5552107A Aluminum nitride body having graded metallurgy 失效
标题翻译：具有分级冶金的氮化铝体
公开(公告)号：US5552107A
公开(公告)日：1996-09-03
申请号：US437494
申请日：1995-05-09
申请人： Jon A. Casey , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Jonathan H. Harris , Lester W. Herron , Gregory M. Johnson , Niranjan M. Patel , Andrew M. Reitter , Subhash L. Shinde , Rao V. Vallabhaneni , Robert A. Youngman
发明人： Jon A. Casey , Carla N. Cordero , Benjamin V. Fasano , David B. Goland , Robert Hannon , Jonathan H. Harris , Lester W. Herron , Gregory M. Johnson , Niranjan M. Patel , Andrew M. Reitter , Subhash L. Shinde , Rao V. Vallabhaneni , Robert A. Youngman
IPC分类号： B32B18/00 , B22F7/02 , C04B35/581 , C04B37/02 , C04B41/51 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/48 , H01L23/373 , H05K1/03 , H05K3/24 , H05K3/40 , H05K3/46
CPC分类号： C04B41/009 , B22F7/02 , C04B41/5133 , C04B41/52 , C04B41/88 , C04B41/89 , C22C29/16 , H01L21/4846 , H01L21/486 , H01L23/3731 , H05K3/4061 , B22F2998/00 , C04B2111/00405 , C04B2111/00844 , H01L2924/0002 , H05K1/0306 , H05K2201/035 , H05K2201/09981 , H05K3/248 , H05K3/4611 , H05K3/4629 , Y10S428/901 , Y10T428/12021 , Y10T428/12028 , Y10T428/12056 , Y10T428/31678
摘要： Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.
摘要翻译：公开了一种具有分级冶金的氮化铝体及其制造方法。氮化铝体具有至少一个通孔，并且包括与氮化铝体直接接触的第一层和与第一层直接接触并完全封装的第二层。第一层包括30至60体积％的氮化铝和40至70体积％的钨和/或钼，而第二层包括90至100体积％的钨和/或钼和0至10体积％的氮化铝。

6. 发明授权

US5509556A Process for forming apertures in a metallic sheet 失效
标题翻译：用于在金属板中形成孔的方法
公开(公告)号：US5509556A
公开(公告)日：1996-04-23
申请号：US340991
申请日：1994-11-17
申请人： James G. Balz , Gregory M. Johnson , Mark J. LaPlante , David C. Long
发明人： James G. Balz , Gregory M. Johnson , Mark J. LaPlante , David C. Long
IPC分类号： B23K26/38 , B31D3/00 , B44C1/22 , C23C1/00
CPC分类号： B23K26/382 , B23K26/384 , B23K26/40 , B23K26/402 , B23K2203/05 , B23K2203/08 , B23K2203/10 , B23K2203/12 , B23K2203/14 , B23K2203/16 , B23K2203/26 , B23K2203/40 , B23K2203/50
摘要： A process of forming an aperture in a metallic sheet including the steps of:a) defining at least one feature in a sheet of metallic material;b) laser drilling the at least one feature but not entirely removing it from the metallic sheet, the at least one feature being partially filled by metallic material which has melted and resolidified; and thenc) chemically etching the metallic sheet and the melted and resolidified metallic material wherein the etchant attacks and at least partially dissolves the melted and resolidified metallic material, weakening the bond of the melted and resolidified metallic material to the metallic sheet.
摘要翻译：一种在金属板中形成孔的方法，包括以下步骤：a）限定金属材料片中的至少一个特征; b）激光钻出所述至少一个特征，但不完全将其从所述金属板上移除，所述至少一个特征部分地被已熔化并重新固化的金属材料填充; 然后c）化学蚀刻金属片和熔融和重新固化的金属材料，其中蚀刻剂攻击并且至少部分地溶解熔融和重新固化的金属材料，从而削弱熔融和重新固化的金属材料与金属片的结合。

7. 发明申请

US20130082257A1 VIA CHAINS FOR DEFECT LOCALIZATION 失效
标题翻译：通过缺陷定位的链条
公开(公告)号：US20130082257A1
公开(公告)日：2013-04-04
申请号：US13251352
申请日：2011-10-03
申请人： Bahierathan Balasingham , Christopher B. D'Aleo , Gregory M. Johnson , Muthukumarasamy Karthikeyan , Shenzhi Yang
发明人： Bahierathan Balasingham , Christopher B. D'Aleo , Gregory M. Johnson , Muthukumarasamy Karthikeyan , Shenzhi Yang
IPC分类号： H01L23/48 , H01L21/66
CPC分类号： H01L22/30 , H01L22/14 , H01L22/20 , H01L22/34
摘要： Method form via chain and serpentine/comb test structures in kerf areas of a wafer. The via chain test structures comprise a first via chain and a second via chain in a first kerf area. The via chain test structures are formed such that geometrically shaped portions of the first via chain and geometrically shaped portions of the second via chain alternate along the length of the first kerf area. The methods perform relatively low (first) magnification testing to identify a defective geometrically shaped portion that contains a defective via structure. The methods then perform relatively high (second) magnification testing only within the defective geometrically shaped portion. The first magnification testing is performed at a lower magnification relative to the second magnification testing.
摘要翻译：通过链条和蛇纹石/梳状测试结构在晶片的切口区域中的方法形式。通孔链测试结构包括在第一切口区域中的第一通孔链和第二通孔链。通孔链测试结构被形成为使得第一通孔链的几何形状部分和第二通孔链的几何形状部分沿着第一切口区域的长度交替。该方法执行相对较低（第一）倍率测试以识别包含有缺陷的通孔结构的有缺陷的几何形状的部分。然后，该方法仅在缺陷几何形状部分内执行相对高（第二）放大率测试。相对于第二倍率测试，以较低的放大倍数执行第一放大率测试。

8. 发明授权

US6117367A Pastes for improved substrate dimensional control 失效
标题翻译：用于改善基材尺寸控制的糊剂
公开(公告)号：US6117367A
公开(公告)日：2000-09-12
申请号：US21045
申请日：1998-02-09
申请人： Raschid J. Bezama , Michael A. Cohn , Benjamin V. Fasano , Gregory M. Johnson , Robert A. Rita , Rao V. Vallabhaneni , Nancy A. Wier-Cavalieri
发明人： Raschid J. Bezama , Michael A. Cohn , Benjamin V. Fasano , Gregory M. Johnson , Robert A. Rita , Rao V. Vallabhaneni , Nancy A. Wier-Cavalieri
IPC分类号： H05K3/46 , C09D5/24 , H01B1/16 , H01B1/22 , H01L23/498 , H05K1/09 , H01B1/02 , H01C1/02
CPC分类号： H01L23/49883 , H01B1/16 , H01B1/22 , H01L24/16 , H01L24/17 , H01L2224/16 , H01L2924/00014 , H01L2924/09701 , H01L2924/14 , H01L2924/15787 , H05K1/092
摘要： Metal pastes used in the fabrication of multilayer ceramic (MLC) substrates used in semiconductor devices. The pastes reduce substrate defects, such as via bulge and camber. The pastes are comprised of a metal having high conductivity, frit which includes glass, an organic binder, and a solvent, optionally with a surfactant.
摘要翻译：用于制造半导体器件中使用的多层陶瓷（MLC）基板的金属浆料。糊剂可减少底物缺陷，例如通过凸起和弯度。糊料由具有高导电性的金属组成，玻璃料包括玻璃，有机粘合剂和溶剂，任选地含有表面活性剂。

9. 发明授权

US06360940B1 Method and apparatus for removing known good die 失效
标题翻译：去除已知好模具的方法和装置
公开(公告)号：US06360940B1
公开(公告)日：2002-03-26
申请号：US09709092
申请日：2000-11-08
申请人： Lannie R. Bolde , James Hennekens , Gregory M. Johnson , David Olson
发明人： Lannie R. Bolde , James Hennekens , Gregory M. Johnson , David Olson
IPC分类号： B23K1018
CPC分类号： H01L21/67144 , B23K1/018 , H01L21/67253
摘要： Preferred embodiments for methods of removing an integrated circuit (“IC”) from a substrate, where the IC is attached to the substrate by multiple solder connections are disclosed. One preferred embodiment of the inventive methods provides the steps of heating the IC and substrate to the reflow temperature for the solder connections and pulling the IC from the substrate by means of a vacuum force. Another preferred embodiment of the inventive method provides the step of shearing the IC from the substrate after the substrate and IC are heated, but before solder reflow temperature has been reached, and where the shearing force may be programmed through a computer controlled servomotor. Preferred embodiments of certain apparatus applying the inventive methods for removing an integrated circuit from a substrate are also disclosed. One preferred embodiment of the inventive apparatus includes a vented pallet to hold the substrate and IC and through which the vacuum force is applied to pull the IC from the substrate without the use of physical clamping or contact forces applied to the substrate or IC. In a further preferred embodiment of the inventive apparatus, shear elements are provided and used with a programmable servomotor for precisely controlling the forces applied to the substrate and IC as a function of time, temperature and translational distance.
摘要翻译：公开了用于通过多个焊接连接将集成电路附接到衬底的衬底去除集成电路（“IC”）的方法的优选实施例。本发明方法的一个优选实施例提供了将IC和衬底加热至用于焊料连接的回流温度并通过真空力将IC从衬底拉出的步骤。本发明方法的另一优选实施例提供了在衬底和IC被加热之后但在达到焊锡回流温度之前以及剪切力可以通过计算机控制的伺服电动机编程的情况下从衬底剪切IC的步骤。还公开了应用本发明的从基板去除集成电路的方法的某些设备的优选实施例。本发明装置的一个优选实施例包括一个通风的托盘，用于保持基板和IC，并且通过其施加真空力以将IC从基板拉出，而不用施加到基板或IC上的物理夹紧或接触力。在本发明装置的另一优选实施例中，提供剪切元件并与可编程伺服电机一起使用，用于根据时间，温度和平移距离精确控制施加到基板和IC的力。

10. 发明授权

US5911945A Method for in-situ environment sensitive sealing and/or product controlling 失效
标题翻译：用于原位环境敏感密封和/或产品控制的方法
公开(公告)号：US5911945A
公开(公告)日：1999-06-15
申请号：US923696
申请日：1997-09-04
申请人： Benjamin Vito Fasano , Johnathan Stephen Fish , Gregory M. Johnson , Subhash Laxman Shinde
发明人： Benjamin Vito Fasano , Johnathan Stephen Fish , Gregory M. Johnson , Subhash Laxman Shinde
IPC分类号： C04B35/638 , B22F3/10 , F27D1/18 , F27D5/00 , B29D22/00
CPC分类号： F27D5/0068 , F27D5/0037 , F27D99/0073 , F27D1/18
摘要： A single furnace loading cycle method for sintering at least one product comprises placing at least one product into a ventable/sealable box, and placing the box within the furnace. The box is vented inside the furnace at a first temperature range and the product is sealed inside the box in a second temperature range, wherein the second temperature range is higher than the first temperature range. The box includes a closeable top cover and a control means that comprises a first set of collapsible spacers which hold open the cover at temperatures below the first temperature range and collapse to lower the cover into sealing engagement with the box at temperatures above the first temperature range. The box further comprises a substrate to be sintered with a lower and an upper setter on opposite sides of the substrate. The substrate rests on the lower setter, and a second set of collapsible spacers rest on the lower setter and have heights sufficient to lift the upper setter above the height of the substrate, and wherein the second set of spacers collapse to lower the upper setter to rest upon the substrate at temperatures above the first temperature range.
摘要翻译：用于烧结至少一种产品的单一炉装载循环方法包括将至少一种产品放置在通气/可密封的箱中，并将箱放置在炉内。箱子在第一温度范围内在炉内排放，产品在第二温度范围内封闭在箱内，其中第二温度范围高于第一温度范围。该箱包括可关闭的顶盖和控制装置，该控制装置包括第一组可折叠间隔件，其在低于第一温度范围的温度下保持打开盖，并且在高于第一温度范围的温度下折叠以降低盖与箱密封接合。盒子还包括与衬底的相对侧上的下部和上部固定器烧结的衬底。基板搁置在下部固定器上，第二组可折叠间隔件搁置在下部固定器上并且具有足以将上部固定器提升到衬底高度之上的高度，并且其中第二组间隔件折叠以将上部固定器降低至在高于第一温度范围的温度下放置在基底上。

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