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1. 发明授权

US06495709B1 Liquid precursors for aluminum oxide and method making same 失效
标题翻译：氧化铝液体前体及其制备方法
公开(公告)号：US06495709B1
公开(公告)日：2002-12-17
申请号：US09526786
申请日：2000-03-16
申请人： Jolanta Celinska , Jeffrey W. Bacon , Akihiro Matsuda , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Jeffrey W. Bacon , Akihiro Matsuda , Carlos A. Paz de Araujo
IPC分类号： C07F506
CPC分类号： C23C30/00 , C03C17/25 , C03C2217/214 , C03C2218/113 , C07C51/412 , C07C53/128
摘要： A precursor for forming an aluminum oxide film comprises a liquid solution of an aluminum organic precursor compound in an organic solvent. In a second embodiment, the precursor comprises a suspension of aluminum oxide powder in a solution of an aluminum organic precursor compound. A precursor according to the invention is deposited on a substrate by dipping, rolling, spraying, misted deposition, spin on deposition, or chemical vapor deposition then heated to fabricate transparent aluminum oxide films. The electronic properties of the aluminum oxide films may be improved by depositing a plurality of layers of the precursor and annealing the precursor between layers.
摘要翻译：用于形成氧化铝膜的前体包括铝有机前体化合物在有机溶剂中的液体溶液。在第二个实施方案中，前体包含氧化铝粉末在铝有机前体化合物的溶液中的悬浮液。根据本发明的前体通过浸渍，轧制，喷涂，雾化沉积，沉积或化学气相沉积沉积在基底上，然后加热以制造透明氧化铝膜。可以通过沉积多层前体并在层间退火前体来改善氧化铝膜的电子性能。

2. 发明授权

US06174213B1 Fluorescent lamp and method of manufacturing same 失效
标题翻译：荧光灯及其制造方法
公开(公告)号：US06174213B1
公开(公告)日：2001-01-16
申请号：US09388038
申请日：1999-09-01
申请人： Carlos A. Paz de Araujo , Jolanta Celinska , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan , Akihiro Matsuda , Gota Kano , Yoshio Yamaguchi , Tatsuo Morita , Hideo Nagai
发明人： Carlos A. Paz de Araujo , Jolanta Celinska , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan , Akihiro Matsuda , Gota Kano , Yoshio Yamaguchi , Tatsuo Morita , Hideo Nagai
IPC分类号： B05D722
CPC分类号： C03C17/3417 , C03C17/253 , C03C2217/21 , C03C2217/211 , C03C2217/24 , C03C2217/244 , C23C18/1216 , C23C18/1225 , C23C18/1275 , C23C18/1283 , C23C18/1291
摘要： Metal organic precursor compounds are dissolved in an organic solvent to form a nonaqueous liquid precursor. The liquid precursor is applied to the inner envelope surface of a fluorescent lamp and heated to form a metal oxide thin film layer. The metal oxide thin film layer may be a conductor, a protective layer or provide other functions. The films have a thickness of from 20 nm to 500 nm. A conductive layer comprising tin-antimony oxide with niobium dopant may be fabricated to have a differential resistivity profile by selecting a combination of precursor composition and annealing temperatures.
摘要翻译：将金属有机前体化合物溶解在有机溶剂中以形成非水性液体前体。将液体前体施加到荧光灯的内包络面上并加热形成金属氧化物薄膜层。金属氧化物薄膜层可以是导体，保护层或提供其他功能。膜的厚度为20nm至500nm。可以通过选择前体组合物和退火温度的组合来制造包含具有铌掺杂剂的锡 - 锑氧化物的导电层以具有差分电阻率分布。

3. 发明授权

US06447838B1 Integrated circuit capacitors with barrier layer and process for making the same 失效
标题翻译：具有阻挡层的集成电路电容器及其制造方法
公开(公告)号：US06447838B1
公开(公告)日：2002-09-10
申请号：US08543827
申请日：1995-10-16
申请人： Masamichi Azuma , Eiji Fujii , Yasuhiro Uemoto , Shinichiro Hayashi , Toru Nasu , Yoshihiro Shimada , Akihiro Matsuda , Tatsuo Otsuki , Michael C. Scott , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Masamichi Azuma , Eiji Fujii , Yasuhiro Uemoto , Shinichiro Hayashi , Toru Nasu , Yoshihiro Shimada , Akihiro Matsuda , Tatsuo Otsuki , Michael C. Scott , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： B05D512
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/55 , H01L28/65 , Y10T29/42
摘要： A Ti/TiN adhesion/barrier layer is formed on a substrate and annealed. The anneal step is performed at a temperature within a good morphology range of 100° C. above a base barrier anneal temperature that depends on the thickness of said barrier layer. The base barrier anneal temperature is about 700° C. for a barrier thickness of about 1000 Å and about 800° C. for a barrier thickness of about 3000 Å. The barrier layer is 800 Å thick or thicker. A first electrode is formed, followed by a BST dielectric layer and a second electrode. A bottom electrode structure in which a barrier layer of TiN is sandwiched between two layers of platinum is also disclosed. The process and structures also produce good results with other capacitor dielectrics, including ferroelectrics such as strontium bismuth tantalate.
摘要翻译：在基板上形成Ti / TiN粘合/阻挡层并退火。退火步骤在取决于所述阻挡层的厚度的基本阻挡退火温度之上的100℃的良好形态范围内进行。对于约3000的屏障厚度，对于约1000和约800℃的阻挡层厚度，基底阻挡退火温度为约700℃。阻挡层厚度为800或更厚。形成第一电极，随后是BST介电层和第二电极。还公开了其中TiN阻挡层夹在两层铂之间的底部电极结构。该工艺和结构也与其他电容器电介质（包括铁电锶钽酸锶）等产生良好的结果。

4. 发明申请

US20090209721A1 Copolymer, production process thereof, lubricating oil viscosity modifier, and lubricating oil composition 有权
标题翻译：共聚物，其制备方法，润滑油粘度调节剂和润滑油组合物
公开(公告)号：US20090209721A1
公开(公告)日：2009-08-20
申请号：US12379143
申请日：2009-02-13
申请人： Satoshi Ikeda , Akihiro Matsuda , Yoshiki Shimokawatoko , Junichi Mohri , Toshiyuki Shimazaki , Hiroshi Terao , Koji Takeda
发明人： Satoshi Ikeda , Akihiro Matsuda , Yoshiki Shimokawatoko , Junichi Mohri , Toshiyuki Shimazaki , Hiroshi Terao , Koji Takeda
IPC分类号： C08F210/14 , C08F210/06 , C08F210/08
CPC分类号： C10M143/08 , C08F4/65912 , C08F4/65927 , C08F210/16 , C10M143/00 , C10M2203/1006 , C10M2205/022 , C10N2220/022 , C10N2230/02 , C08F4/65904 , C08F210/06 , C08F2500/20 , C08F2500/03 , C08F2500/17 , C08F2500/08 , C10M2205/028
摘要： Copolymers when used as lubricating oil viscosity modifiers enable lubricating oils to show excellent low-temperature properties. Processes for producing the copolymers are disclosed. Lubricating oil viscosity modifiers and lubricating oil compositions contain the copolymers.A copolymer includes structural units derived from ethylene and structural units derived from a C3-20 α-olefin and satisfies the following requirements (1) to (8): (1) the melting point (Tm) according to DSC is in the range of 0 to 60° C.; (2) the melting point (Tm) and the density D (g/cm3) satisfy the equation: Tm≧1073×D−893; (3) Mw/Mn according to GPC is from 1.6 to 5.0; (4) the half-value width (ΔThalf) of a melting peak measured by DSC is not more than 90° C.; (5) the half-value width (ΔThalf) and the melting point (Tm) satisfy the equation: ΔThalf≦−0.71×Tm+101.4; (6) the heat of fusion (ΔH) as measured by DSC is not more than 60 J/g; (7) the crystallization temperature (Tc) measured by DSC is not more than 70° C.; (8) the heat of fusion (ΔH), the crystallization temperature (Tc), each measured by DSC and the crystallization temperature measured by a CRYSTAF method (Tcrystaf) satisfy the equation: Tc−Tcrystaf≧0.028×ΔH+25.3.
摘要翻译：当用作润滑油粘度调节剂时，共聚物使润滑油显示出优异的低温性能。公开了制备共聚物的方法。润滑油粘度调节剂和润滑油组合物含有共聚物。共聚物包括衍生自乙烯的结构单元和衍生自C3-20α-烯烃的结构单元，并且满足以下要求（1）至（8）：（1）根据DSC的熔点（Tm）在 0〜60℃。（2）熔点（Tm）和密度D（g / cm 3）满足下式：Tm> = 1073×D-893; （3）根据GPC的Mw / Mn为1.6〜5.0; （4）通过DSC测定的熔融峰的半值宽度（DeltaThalf）不大于90℃。（5）半值宽度（DeltaThalf）和熔点（Tm）满足以下等式：DeltaThalf <= -0.71xTm + 101.4; （6）通过DSC测定的熔解热（DeltaH）不大于60J / g; （7）通过DSC测定的结晶温度（Tc）为70℃以下。（8）通过DSC测定的各自测量的结晶温度（Tc），通过CRYSTAF法（Tcrystaf）测定的结晶温度满足下列公式：<？in-line-formula description =“In- 线公式“end =”lead“？> Tc-Tcrystaf> = 0.028xDeltaH + 25.3。<？in-line-formula description =”In-line Formulas“end =”tail“？>

5. 发明申请

US20070007414A1 Vehicle-mounted electronic device 审中-公开
标题翻译：车载电子设备
公开(公告)号：US20070007414A1
公开(公告)日：2007-01-11
申请号：US11512233
申请日：2006-08-30
申请人： Akihiro Matsuda , Ryoichi Hirako
发明人： Akihiro Matsuda , Ryoichi Hirako
IPC分类号： A47F5/00
CPC分类号： B60K37/06 , B60K2370/81 , B60R11/0211 , B60R2011/0005 , B60R2011/0047 , B60R2011/0052 , B60R2011/0094 , B60R2011/027
摘要： The invention provides a structure for attaching the main body and components of a vehicle-mounted electronic device, capable of increasing the size of an operation panel and a monitor for the electronic device stored in a vehicle-mounted electronic device storage section. In a first phase of the invention, in a structure for attaching a vehicle-mounted electronic device by fixing a vehicle-mounted electronic device to a vehicle, fixing a cluster panel to the vehicle in such a manner as to pass the vehicle-mounted electronic device therethrough, and fixing a panel wider than the opening in the cluster panel to the vehicle-mounted electronic device in such a manner as to place it over the cluster panel, a sub-bracket is attached to the lateral surface of the electronic device main body in such a manner that its position can be adjusted, and an attaching metal element is fastened to the sub-bracket so as to fasten the attaching metal element to the vehicle.
摘要翻译：本发明提供了一种用于安装车载电子设备的主体和部件的结构，其能够增加操作面板的尺寸和用于存储在车载电子设备存储部分中的电子设备的监视器。在本发明的第一阶段中，在通过将车载电子设备固定到车辆来安装车载电子设备的结构中，将集群面板固定在车辆上以使车载电子装置穿过其中，并将面板比面板上的开口更宽的面板固定在车载电子设备上，以将其放置在群集面板上，将副托架安装在电子设备主体的侧表面上本体可以调整其位置，并且将附接金属元件紧固到副支架上，以将附接金属元件紧固到车辆上。

6. 发明授权

US06333528B1 Semiconductor device having a capacitor exhibiting improved moisture resistance 失效
标题翻译：具有显示改善的耐湿性的电容器的半导体装置
公开(公告)号：US06333528B1
公开(公告)日：2001-12-25
申请号：US09071795
申请日：1998-05-04
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

7. 发明授权

US06126752A Semiconductor device having capacitor and manufacturing apparatus thereof 失效
标题翻译：具有电容器的半导体器件及其制造装置
公开(公告)号：US06126752A
公开(公告)日：2000-10-03
申请号：US947712
申请日：1997-10-09
申请人： Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Shinitirou Hayashi , Tooru Nasu , Koichi Arita , Atsuo Inoue , Akihiro Matsuda , Masaki Kibe , Tatsuo Ootsuki
发明人： Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Shinitirou Hayashi , Tooru Nasu , Koichi Arita , Atsuo Inoue , Akihiro Matsuda , Masaki Kibe , Tatsuo Ootsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/06 , H01L27/115 , H01L29/92 , B05B5/057
CPC分类号： H01L27/11502 , H01L27/0629 , H01L27/0688 , H01L27/1085 , H01L27/11507 , H01L28/40 , H01L28/55
摘要： A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.
摘要翻译：一种包括集成电路和电容器的半导体器件。在该电容器中，在层间绝缘膜上形成独立于集成电路的底电极，电介质膜和顶电极，并且顶电极和底电极通过在保护膜中开口的接触孔与金属互连连接用于保护电容器的表面。在这种结构中，顶部电极或底部电极与集成电路的偏置线连接，另一个连接到接地线，使得可以减少外部发射而不必将电容器连接到外部。

8. 发明授权

US6015987A Semiconductor device having capacitor exhibiting improved mositure resistance and manufacturing method thereof 失效
标题翻译：具有显示出改善的耐电阻性的电容器的半导体器件及其制造方法
公开(公告)号：US6015987A
公开(公告)日：2000-01-18
申请号：US71122
申请日：1998-05-04
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L27/108 , H01L29/00 , H01L29/76 , H01L29/94
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

9. 发明授权

US5717233A Semiconductor device having capacitior and manufacturing method thereof 失效
标题翻译：具有电容的半导体器件及其制造方法
公开(公告)号：US5717233A
公开(公告)日：1998-02-10
申请号：US778953
申请日：1997-01-06
申请人： Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Shinitirou Hayashi , Tooru Nasu , Koichi Arita , Atsuo Inoue , Akihiro Matsuda , Masaki Kibe , Tatsuo Ootsuki
发明人： Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Shinitirou Hayashi , Tooru Nasu , Koichi Arita , Atsuo Inoue , Akihiro Matsuda , Masaki Kibe , Tatsuo Ootsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/06 , H01L27/115 , H01L29/92 , H01L29/76
CPC分类号： H01L27/11502 , H01L27/0629 , H01L27/0688 , H01L27/1085 , H01L27/11507 , H01L28/40 , H01L28/55
摘要： A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.
摘要翻译：一种包括集成电路和电容器的半导体器件。在该电容器中，在层间绝缘膜上形成独立于集成电路的底电极，电介质膜和顶电极，并且顶电极和底电极通过在保护膜中开口的接触孔与金属互连连接用于保护电容器的表面。在这种结构中，顶部电极或底部电极与集成电路的偏置线连接，另一个连接到接地线，使得可以减少外部发射而不必将电容器连接到外部。

10. 发明授权

US5644158A Semiconductor memory device reducing hydrogen content 失效
标题翻译：半导体存储器件具有降低的氢含量
公开(公告)号：US5644158A
公开(公告)日：1997-07-01
申请号：US492690
申请日：1995-06-20
申请人： Eiji Fujii , Atsuo Inoue , Koji Arita , Toru Nasu , Akihiro Matsuda
发明人： Eiji Fujii , Atsuo Inoue , Koji Arita , Toru Nasu , Akihiro Matsuda
IPC分类号： H01L27/04 , H01L21/02 , H01L21/3105 , H01L21/324 , H01L21/768 , H01L21/822 , H01L27/10 , H01L21/3205
CPC分类号： H01L28/40 , H01L21/3105 , H01L21/76828
摘要： A semiconductor device comprising: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer formed on the semiconductor device and having first contact holes which lead to the integrated circuit, (c) a capacitance element formed on the first insulating layer, (d) a second insulating layer formed on the first insulating layer to cover the capacitance element, and having second contact holes which lead to an upper and a lower electrodes of the capacitance element respectively, and (e) interconnections which are connected to the integrated circuit and the capacitance element respectively through the first and second contact holes. The hydrogen density of this semiconductor device is 10.sup.11 atoms/cm.sup.2 or less.
摘要翻译：一种半导体器件，包括：（a）在其表面上形成集成电路的半导体衬底，（b）形成在半导体器件上并具有通向集成电路的第一接触孔的第一绝缘层，（c）电容元件形成在所述第一绝缘层上，（d）形成在所述第一绝缘层上以覆盖所述电容元件的第二绝缘层，以及具有分别通向所述电容元件的上下电极的第二接触孔，以及（e）互连通过第一和第二接触孔分别连接到集成电路和电容元件。该半导体器件的氢密度为1011原子/ cm 2以下。

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