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1. 发明授权

US5355969A Composite polycrystalline cutting element with improved fracture and delamination resistance 失效
$Composite polycrystalline cutting element with improved fracture and delamination resistance$
标题翻译：复合多晶切割元件具有改善的断裂和抗分层性能
公开(公告)号：US5355969A
公开(公告)日：1994-10-18
申请号：US36540
申请日：1993-03-22
申请人： John W. Hardy , Bill J. Pope , Kevin G. Graham , Robert J. Farr
发明人： John W. Hardy , Bill J. Pope , Kevin G. Graham , Robert J. Farr
IPC分类号： B23B27/14 , B23P15/28 , E21B10/56 , E21B10/573 , E21B10/46
CPC分类号： E21B10/5735 , B23B27/146 , B23P15/28 , B23B2222/28 , B23B2226/125 , B23B2226/315
摘要： A cutting implement formed from a substrate of carbide, or other hard substance, bonded to a polycrystalline layer which serves as the cutting portion of the implement. The interface between the substrate and polycrystalline layer is defined by surface topography with radially spaced-apart protuberances and depressions forming smooth transitional surfaces.
摘要翻译：一种由碳化物或其它硬质材料的基材形成的切割工具，其结合到用作工具的切割部分的多晶层。衬底和多晶层之间的界面由具有径向间隔开的突起和凹陷形成平滑过渡表面的表面形貌限定。

2. 发明授权

US06534367B2 Trench-gate semiconductor devices and their manufacture 有权
公开(公告)号：US06534367B2
公开(公告)日：2003-03-18
申请号：US10134213
申请日：2002-04-26
申请人： Steven T. Peake , Georgios Petkos , Robert J. Farr , Christopher M. Rogers , Raymond J. Grover , Peter J. Forbes
发明人： Steven T. Peake , Georgios Petkos , Robert J. Farr , Christopher M. Rogers , Raymond J. Grover , Peter J. Forbes
IPC分类号： H01L21336
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/41766 , H01L29/42368 , H01L29/6634 , H01L29/66348 , H01L29/66727 , H01L29/66848
摘要： Compact trench-gate semiconductor devices, for example a cellular power MOSFET with sub-micron pitch (Yc), are manufactured with self-aligned techniques that use sidewall spacers (52) in different ways. The trench-gate (11) is accommodated in a narrow trench (20) that is etched via a narrow window (52b) defined by the spacers (52) at sidewalls of a wider window (51a) of a mask (51) at the body surface (10a). The spacers (52) permit a source region (13) adjacent to the trench-gate (11) and an insulating overlayer (18) over the trench-gate (11) to be self-aligned to this narrow trench (20). The overlayer (18), which defines a contact window (18a) for a source electrode (33), is provided in a simple but reproducible manner by deposition and etch-back, after removing the spacers (52). Its overlap (y4, y4′) with the body surface (10a) is well-defined, so reducing a short-circuit risk between the source electrode (33) and the trench-gate (11). Furthermore, implantation of the source region (13) is facilitated, and a channel-accommodating region (15) can also be provided using a high energy implant (61) after providing the insulating overlayer (18).

3. 发明授权

US06660591B2 Trench-gate semiconductor devices having a channel-accommodating region and their methods of manufacture 失效
标题翻译：具有通道容纳区域的沟槽栅半导体器件及其制造方法
公开(公告)号：US06660591B2
公开(公告)日：2003-12-09
申请号：US10134209
申请日：2002-04-26
申请人： Steven T. Peake , Georgios Petkos , Robert J. Farr , Christopher M. Rogers , Raymond J. Grover , Peter J. Forbes
发明人： Steven T. Peake , Georgios Petkos , Robert J. Farr , Christopher M. Rogers , Raymond J. Grover , Peter J. Forbes
IPC分类号： H01L21336
CPC分类号： H01L29/66348 , H01L29/42368
摘要： Compact trench-gate semiconductor devices, for example a cellular power MOSFET with sub-micron pitch (Yc), are manufactured with self-aligned techniques that use sidewall spacers (52) in different ways. Thereby, the source region (13) and a contact window (18a) for a source electrode (33) can be self-aligned to a narrow trench (20) containing the trench-gate (11). Thereby, the channel-accommodating region (15) can also be provided after forming the trench-gate (11), and with very good control of its doping concentration (Na; p) adjacent to the trench (20). To achieve this control, its dopant is provided after removing the spacers (52) from the mask (51) so as to form a doping window (51b), which may also be used for the source dopant, adjacent to the trench-gate (11). A high energy dopant implant (61) or other doping process provides this channel dopant adjacent to the trench (20) and extending laterally below the mask (51,51n). A remarkably uniform doping profile can be achieved beneath the doping window (51b) and beneath the mask (51,51n). By using a high ion energy and high dose, the dopant ions (61) at the doping window (51b) can be laterally scattered below the mask (51) while those at the mask (51) penetrate there-through to be implanted in the underlying portion of the body (100).
摘要翻译：紧凑型沟槽栅极半导体器件（例如具有亚微米间距（Yc）的蜂窝功率MOSFET）以具有以不同方式使用侧壁间隔物（52）的自对准技术制造。因此，用于源电极（33）的源区（13）和接触窗（18a）可以与包含沟槽栅极（11）的窄沟槽（20）自对准。由此，也可以在形成沟槽栅极（11）之后提供沟道容纳区域（15），并且非常好地控制与沟槽（20）相邻的掺杂浓度（Na; p）。为了实现该控制，在从掩模（51）去除间隔物（52）之后提供其掺杂剂，以形成邻近沟槽栅极（也可用于源极掺杂剂）的掺杂窗口（51b） 11）。高能量掺杂剂注入（61）或其它掺杂工艺提供了与沟槽（20）相邻并且在掩模（51,51n）下方横向延伸的该沟道掺杂剂。在掺杂窗口（51b）下面和掩模（51,51n）下面可以实现非常均匀的掺杂分布。通过使用高离子能量和高剂量，掺杂窗口（51b）处的掺杂剂离子（61）可以横向散布在掩模（51）下方，而掩模（51）处的掺杂离子（61）穿过其中，以便被植入到身体（100）的下部。

4. 发明授权

US6098730A Earth-boring bit with super-hard cutting elements 失效
标题翻译：地球钻头与超硬切割元素
公开(公告)号：US6098730A
公开(公告)日：2000-08-08
申请号：US74260
申请日：1998-05-07
申请人： Danny E. Scott , Rudolf C. O. Pessier , Robert J. Farr , Stephen R. Jurewicz , Kenneth M. Jensen , Paul D. Jones
发明人： Danny E. Scott , Rudolf C. O. Pessier , Robert J. Farr , Stephen R. Jurewicz , Kenneth M. Jensen , Paul D. Jones
IPC分类号： E21B10/16 , E21B10/46 , E21B10/52 , E21B10/56 , E21B10/567
CPC分类号： E21B10/5673 , E21B10/16 , E21B10/52
摘要： An earth-boring bit has a bit body and at least one cantilevered bearing shaft depending inwardly and downwardly from the bit body. A cutter is mounted for rotation on the bearing shaft and includes a plurality of cutting elements. At least one of the cutting elements has a generally cylindrical body formed of hard metal with a convex cutting end. A plurality of substantially recesses are formed on the cutting end of the body. The recesses are configured such that a line parallel to the longitudinal axis of the body may extend from any point of each of the recess without touching any other point on the same recess. This enables the cutting element body and the recess to be formed simultaneously by conventional powder metallurgical techniques. A layer of super-hard material is formed on the cutting end of the body and overlays the recesses formed thereon.
摘要翻译：钻头具有一定体积，至少有一个悬臂轴承轴从钻头体向内和向下偏移。安装刀具用于在轴承轴上旋转并且包括多个切割元件。至少一个切割元件具有由具有凸形切割端的硬质金属形成的大致圆柱形的主体。在主体的切割端部上形成有多个基本凹部。凹部被构造成使得平行于主体的纵向轴线的线可以从每个凹部的任何点延伸，而不会碰到相同凹部上的任何其它点。这使得切割元件主体和凹部能够通过常规的粉末冶金技术同时形成。在本体的切割端上形成一层超硬材料，并覆盖其上形成的凹部。

5. 发明授权

US5758733A Earth-boring bit with super-hard cutting elements 失效
标题翻译：地球钻头与超硬切割元素
公开(公告)号：US5758733A
公开(公告)日：1998-06-02
申请号：US633983
申请日：1996-04-17
申请人： Danny E. Scott , Rudolf Carl Otto Pessier , Robert J. Farr , Stephen R. Jurewicz , Kenneth M. Jensen , Paul D. Jones
发明人： Danny E. Scott , Rudolf Carl Otto Pessier , Robert J. Farr , Stephen R. Jurewicz , Kenneth M. Jensen , Paul D. Jones
IPC分类号： E21B10/16 , E21B10/46 , E21B10/52 , E21B10/56 , E21B10/567
CPC分类号： E21B10/5673 , E21B10/16 , E21B10/52
摘要： An earth-boring bit has a bit body and at least one cantilevered bearing shaft depending inwardly and downwardly from the bit body. A cutter is mounted for rotation on the bearing shaft and includes a plurality of cutting elements. At least one of the cutting elements has a generally cylindrical body formed of hard metal with a convex cutting end. A plurality of substantially linear, parallel lands are formed on the cutting end of the body. The lands have arcuate top surfaces and define grooves between the land having arcuate bottom surfaces. A layer of super-hard material is formed on the cutting end of the body and engages the lands and grooves formed thereon.
摘要翻译：钻头具有一定体积，至少有一个悬臂轴承轴从钻头体向内和向下偏移。安装刀具用于在轴承轴上旋转并且包括多个切割元件。至少一个切割元件具有由具有凸形切割端的硬质金属形成的大致圆柱形的主体。在主体的切割端上形成有多个基本上线性的平行的平台。土地具有弧形的顶部表面并且在具有弓形底部表面的区域之间限定凹槽。一层超硬材料形成在主体的切割端上并与其上形成的凸台和凹槽接合。

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