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    • 1. 发明授权
    • Generation of ionized air for semiconductor chips
    • 生成半导体芯片的电离空气
    • US5316970A
    • 1994-05-31
    • US895181
    • 1992-06-05
    • John S. BatchelderVaughn P. GrossRobert A. GruverPhilip C. D. HobbsKenneth D. Murray
    • John S. BatchelderVaughn P. GrossRobert A. GruverPhilip C. D. HobbsKenneth D. Murray
    • B01J19/00B01J19/12H01L21/00H01L21/304H05F3/06
    • H01L21/67028H05F3/06Y10S430/138Y10S438/909
    • Ionization of air without the use of corona discharge tips, thereby to avoid the generation of particulates from corrosion of the corona tips, is accomplished by use of a laser beam focussed to a small focal volume of intense electric field adjacent a semiconductor chip. The electric field is sufficiently intense to ionize air. In the manufacture of a semiconductor circuit chip, during those steps which are conducted in an air environment, opportunity exists to remove from a surface of a chip, or wafer, charge acquired during the manufacturing process. The ionized air is passed along the chip surface. Ions in the air discharge local regions of the chip surface which have become charged by steps of a manufacturing process. By way of further embodiment of the invention, the ionization may be produced by injection of molecules of water into the air, which molecules are subsequently ionized by a laser beam and directed toward the chip via a light shield with the aid of a magnetic field.
    • 通过使用聚焦于与半导体芯片相邻的强电场的小焦点体积的激光束来实现空气的离子化,而不使用电晕放电尖端,从而避免由于电晕尖端的腐蚀而产生微粒。 电场足够强以使空气电离。 在半导体电路芯片的制造中,在空气环境中进行的那些步骤中,存在从制造过程中获取的芯片或晶片的表面去除电荷的机会。 电离空气沿芯片表面通过。 芯片表面的空气放电局部区域中的离子通过制造过程的步骤而被充电。 通过本发明的进一步的实施方式,电离可以通过将水分子注入到空气中来产生,该分子随后通过激光束被电离,并借助于磁场通过光屏指向芯片。
    • 2. 发明授权
    • Generation of ionized air for semiconductor chips
    • 生成半导体芯片的电离空气
    • US5432670A
    • 1995-07-11
    • US166509
    • 1993-12-13
    • John S. BatchelderVaughn P. GrossRobert A. GruverPhilip C. D. HobbsKenneth D. Murray
    • John S. BatchelderVaughn P. GrossRobert A. GruverPhilip C. D. HobbsKenneth D. Murray
    • B01J19/00B01J19/12H01L21/00H01L21/304H05F3/06
    • H01L21/67028H05F3/06Y10S430/138Y10S438/909
    • Ionization of air without the use of corona discharge tips, thereby to avoid the generation of particulates from corrosion of the corona tips, is accomplished by use of a laser beam focussed to a small focal volume of intense electric field adjacent a semiconductor chip. The electric field is sufficiently intense to ionize air. In the manufacture of a semiconductor circuit chip, during those steps which are conducted in an air environment, opportunity exists to remove from a surface of a chip, or wafer, charge acquired during the manufacturing process. The ionized air is passed along the chip surface. Ions in the air discharge local regions of the chip surface which have become charged by steps of a manufacturing process. By way of further embodiment of the invention, the ionization may be produced by injection of molecules of water into the air, which molecules are subsequently ionized by a laser beam and directed toward the chip via a light shield with the aid of a magnetic field.
    • 通过使用聚焦于与半导体芯片相邻的强电场的小焦点体积的激光束来实现空气的离子化,而不使用电晕放电尖端,从而避免由于电晕尖端的腐蚀而产生微粒。 电场足够强以使空气电离。 在半导体电路芯片的制造中,在空气环境中进行的那些步骤中,存在从制造过程中获取的芯片或晶片的表面去除电荷的机会。 电离空气沿芯片表面通过。 芯片表面的空气放电局部区域中的离子通过制造过程的步骤而被充电。 通过本发明的进一步的实施方式,电离可以通过将水分子注入到空气中来产生,该分子随后通过激光束被电离,并借助于磁场通过光屏指向芯片。
    • 8. 发明授权
    • Particle path determination system
    • 粒径测定系统
    • US5133602A
    • 1992-07-28
    • US682752
    • 1991-04-08
    • John S. BatchelderDonald M. DeCainPhilip C. D. HobbsMarc A. Taubenblatt
    • John S. BatchelderDonald M. DeCainPhilip C. D. HobbsMarc A. Taubenblatt
    • G01N15/14G01N15/02G01N21/21G01P11/00
    • G01N15/0205G01N2015/0238G01N2021/1759G01N2021/4792
    • A bright-field, particle position determining optical system is disclosed that uses both phase shift and extinction signals to determine particle trajectories. In a first embodiment, a pair of orthogonally polarized beams are positioned along an axis that intersects a particle's flow path at an acute angle. An optical system recombines the beams after they exit the flow path, the combined beams manifesting an elliptical polarization if a particle intersects one of the beams. Bright field detectors detect polarization components of the combined beam, provide a phase shift signal between the beam's orthogonal components and provide corresponding signals to a processor. The processor determines a signal asymmetry from the phase shift signal that is indicative of a particle's position in the flow path. Another embodiment of the invention examines a signal resulting from the beam's phase shift and determines a correction factor that is dependent upon the distance of the particle from the focal plane of the beams. Another embodiment employs a dithering system for cyclically moving one or more optical beams across a particle to further enable its trajectory or position to be determined.
    • 公开了使用相移和消光信号来确定粒子轨迹的明场,粒子位置确定光学系统。 在第一实施例中,一对正交偏振光束沿着与颗粒的流动通道以锐角相交的轴线定位。 光束在离开流路之后将光束重新组合,如果粒子与光束之一相交,那么组合光束表现出椭圆极化。 光场检测器检测组合光束的偏振分量,在光束的正交分量之间提供相移信号,并向处理器提供相应的信号。 处理器确定来自指示颗粒在流动路径中的位置的相移信号的信号不对称性。 本发明的另一个实施例检查由光束的相移产生的信号,并确定取决于粒子与光束的焦平面的距离的校正因子。 另一个实施例采用抖动系统来循环移动一个或多个光束穿过颗粒,以进一步确定其轨迹或位置。
    • 10. 发明授权
    • Dark field imaging defect inspection system for repetitive pattern
integrated circuits
    • 用于重复图案集成电路的暗场成像缺陷检查系统
    • US5177559A
    • 1993-01-05
    • US701936
    • 1991-05-17
    • John S. BatchelderMarc A. Taubenblatt
    • John S. BatchelderMarc A. Taubenblatt
    • G01B11/24G01N21/88G01N21/94G01N21/956H01L21/66
    • G02B21/10G01N21/95623G01N2021/8822
    • An optical inspection system for patterned semiconductor wafers generates a dark field image of the wafer by applying a collimated beam of monochrome light at an incident angle with respect to the surface of the wafer of between 8.degree. and a maximum angle defined by the numerical aperture of the imaging system and collecting the light which is scattered at angles approximately normal to the surface of the wafer and within the numerical aperture of the imaging system. In addition, the incident light is at an angle of 45.degree. in the surface plane of the wafer with respect to the rectangular lines which predominate in the pattern. Before forming the dark field image, the collected light is passed through a Fourier transform filter which substantially attenuates spatial frequency components corresponding to the pattern. In the resultant dark field image, defects in the pattern and contaminating particles are accentuated relative to the pattern features.
    • 用于图案化半导体晶片的光学检查系统通过以相对于晶片表面的入射角施加8°的准直光束和由数字孔径的数值孔径限定的最大角度来施加晶片的暗视场图像 成像系统并收集以大致垂直于晶片表面并且在成像系统的数值孔径内散射的光。 此外,入射光在晶片的表面平面上相对于以图案为主的矩形线成45度的角度。 在形成暗场图像之前,所收集的光通过傅里叶变换滤波器,该滤波器基本上衰减对应于图案的空间频率分量。 在所得到的暗场图像中,图案和污染颗粒中的缺陷相对于图案特征被加强。