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1. 发明授权

US5363550A Method of Fabricating a micro-coaxial wiring structure 失效
标题翻译：制造微同轴布线结构的方法
公开(公告)号：US5363550A
公开(公告)日：1994-11-15
申请号：US996210
申请日：1992-12-23
申请人： John M. Aitken , Shahzad Akbar , Billy L. Crowder , Asif Iqbal , Perwaiz Nihal
发明人： John M. Aitken , Shahzad Akbar , Billy L. Crowder , Asif Iqbal , Perwaiz Nihal
IPC分类号： H01P3/06 , H01B13/20
CPC分类号： H01P3/06 , Y10T29/49123 , Y10T29/49155 , Y10T29/49165
摘要： A method of fabricating a micro-coaxial wiring structure comprises forming a first insulation layer and patterning a trench therein. A first conductive layer is formed on the first insulation layer and having a shape conforming to the insulation layer and lining the trench. A second insulation layer is formed on the first conductive layer within the trench and having a shape conforming to the first conductive layer lining the trench. A conductive signal line having a predetermined aspect ratio for providing a desired value of resistance per unit length is formed on the second insulation layer within the trench. A third insulation layer is then formed. Lastly, a conductive shielding line is formed upon the third insulation layer, the conductive shielding line being aligned with the conductive signal line.
摘要翻译：制造微同轴布线结构的方法包括形成第一绝缘层并在其中图案化沟槽。第一导电层形成在第一绝缘层上并且具有与绝缘层一致的形状并衬在沟槽上。第二绝缘层形成在沟槽内的第一导电层上，并且具有与衬套在沟槽上的第一导电层一致的形状。在沟槽内的第二绝缘层上形成具有用于提供每单位长度的电阻值的预定宽高比的导电信号线。然后形成第三绝缘层。最后，在第三绝缘层上形成导电屏蔽线，导电屏蔽线与导电信号线对齐。

2. 发明授权

US06803156B2 Electrostatic damage (ESD) protected photomask 失效
标题翻译：静电损伤（ESD）保护光掩模
公开(公告)号：US06803156B2
公开(公告)日：2004-10-12
申请号：US09920504
申请日：2001-08-01
申请人： Shahzad Akbar
发明人： Shahzad Akbar
IPC分类号： G03F900
CPC分类号： G03F1/40
摘要： A photomask (8) protected against electrostatic damage and a method of manufacturing such a photomask is disclosed. The photomask (8) comprises a transparent substrate (10) on which is deposited an opaque pattern such as lines (12), (14), (16) and (18). A transparent conductive film (30) is deposited over the substrate (10) and pattern such that the various portions of the pattern (lines (12), (14), (16) and (18)) are all maintained at the same electrical potential thereby preventing damage due to an electrostatic discharge.
摘要翻译：公开了防止静电损伤的光掩模（8）和制造这种光掩模的方法。光掩模（8）包括透明基板（10），在其上沉积不透明图案，例如线（12），（14），（16）和（18）。在衬底（10）上沉积透明导电膜（30）并且使图案（线（12），（14），（16）和（18））的各个部分全部保持在相同的电从而防止由静电放电引起的损坏。

3. 发明授权

US5259918A Heteroepitaxial growth of germanium on silicon by UHV/CVD 失效
标题翻译：通过UHV / CVD在硅上进行异质外延生长
公开(公告)号：US5259918A
公开(公告)日：1993-11-09
申请号：US714297
申请日：1991-06-12
申请人： Shahzad Akbar , Jack O. Chu , Brian Cunningham
发明人： Shahzad Akbar , Jack O. Chu , Brian Cunningham
IPC分类号： C23C16/02 , C23C16/28 , C30B25/02 , H01L21/205 , C30B25/12
CPC分类号： C23C16/28 , C23C16/0227 , C30B25/02 , C30B29/08
摘要： A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-9 Torr; heating the substrate to 300-375 degrees C; and providing a 10% GeH4, 90% He mixture of gas with a GeH.sub.4 partial pressure of 1-5 mTorr.

4. 发明授权

US5656845A EEPROM on insulator 失效
标题翻译：绝缘体上的EEPROM
公开(公告)号：US5656845A
公开(公告)日：1997-08-12
申请号：US400613
申请日：1995-03-08
申请人： Shahzad Akbar
发明人： Shahzad Akbar
IPC分类号： H01L27/115 , H01L27/01 , H01L27/12 , H01L29/788 , H01L31/0392
CPC分类号： H01L27/115
摘要： A nonvolatile memory cell such as an EPROM or EEPROM formed with a silicon on insulator technology has immunity to latchup and punchthrough and increased transconductance. A floating gate is formed atop a thin active layer of silicon containing source, drain and channel regions, the active layer lying atop an insulative layer that shields the active layer from an underlying silicon substrate. In a preferred embodiment, a stripe-shaped split gate extends over the floating gate and a portion of the channel, the split gate employed both to control charging and discharging of the floating gate and to sense whether charge is stored on the floating gate, while occupying a smaller memory cell area.
摘要翻译：形成有绝缘体上硅技术的诸如EPROM或EEPROM的非易失性存储单元具有闭锁和穿通以及增加的跨导的抗扰度。浮置栅极形成在含硅的源极，漏极和沟道区域的薄的有源层的顶上，有源层位于绝缘层的顶部，该有源层屏蔽有源层与下面的硅衬底。在优选实施例中，条形分裂栅极在浮动栅极和沟道的一部分上延伸，分裂栅极用于控制浮置栅极的充电和放电并且感测是否将电荷存储在浮动栅极上，同时占用较小的存储单元区域。

5. 发明授权

US5286334A Nonselective germanium deposition by UHV/CVD 失效
标题翻译：通过UHV / CVD进行无反射的锗沉积
公开(公告)号：US5286334A
公开(公告)日：1994-02-15
申请号：US779677
申请日：1991-10-21
申请人： Shahzad Akbar , Jack O. Chu , Brian Cunningham , Gregory Fitzgibbon , Somnuk Ratanaphanyarat
发明人： Shahzad Akbar , Jack O. Chu , Brian Cunningham , Gregory Fitzgibbon , Somnuk Ratanaphanyarat
IPC分类号： H01L21/205 , C30B25/02 , C30B25/00
CPC分类号： C30B25/02 , C30B29/08
摘要： A method of depositing Ge on a Si substrate in a reaction chamber includes the steps of: precleaning the substrate; evacuating the chamber to a pressure below 10.sup.-7 Torr; heating the substrate to 300.degree.-600.degree. C.; and providing a GeH.sub.4 /B.sub.2 H.sub.6 /He mixture of gas with a GeH.sub.4 partial pressure of 2-50 mTorr and a B.sub.2 H.sub.6 partial pressure of 0.08 to 2 mTorr.
摘要翻译：在反应室中在Si衬底上沉积Ge的方法包括以下步骤：预清洗衬底; 将室排空至低于10-7乇的压力; 将基板加热至300度至600度; 并提供GeH4 / B2H6 / He混合气体，GeH4分压为2-50mTorr，B2H6分压为0.08〜2mTorr。

6. 发明授权

US07928471B2 Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor 有权
标题翻译：硅或硅锗衬底上的III族氮化物生长及其方法和装置
公开(公告)号：US07928471B2
公开(公告)日：2011-04-19
申请号：US11566288
申请日：2006-12-04
申请人： Michael A. Mastro , Charles R. Eddy, Jr. , Shahzad Akbar
发明人： Michael A. Mastro , Charles R. Eddy, Jr. , Shahzad Akbar
IPC分类号： H01L31/102 , H01L33/00 , H01S5/00
CPC分类号： H01L31/078 , H01L31/1812 , H01L31/184 , Y02E10/544
摘要： A structure including a Si1-xGex substrate and a distributed Bragg reflector layer disposed directly onto the substrate. The distributed Bragg reflector layer includes a repeating pattern that includes at least one aluminum nitride layer and a second layer having the general formula AlyGa1-yN. Another aspect of the present invention is various devices including this structure. Another aspect of the present invention is directed to a method of forming such a structure comprising providing a Si1-xGex substrate and depositing a distributed Bragg reflector layer directly onto the substrate. Another aspect of the present invention is directed to a photodetector or photovoltaic cell device, including a Si1-xGex substrate device, a group III-nitride device and contacts to provide a conductive path for a current generated across at least one of the Si1-xGex substrate device and the group III-nitride device upon incident light.
摘要翻译：包括Si1-xGex衬底和直接设置在衬底上的分布式布拉格反射层的结构。分布布拉格反射层包括重复图案，其包括至少一个氮化铝层和具有通式AllyGa1-yN的第二层。本发明的另一方面是包括该结构的各种装置。本发明的另一方面涉及一种形成这种结构的方法，包括提供Si 1-x Ge x衬底并将分布式布拉格反射层直接沉积到衬底上。本发明的另一方面涉及一种光电检测器或光伏电池器件，其包括Si1-xGex衬底器件，III族氮化物器件和触点，以提供穿过Si1-xGex中的至少一个产生的电流的导电路径衬底器件和III族氮化物器件。

7. 发明申请

US20080128745A1 GROUP III-NITRIDE GROWTH ON SILICON OR SILICON GERMANIUM SUBSTRATES AND METHOD AND DEVICES THEREFOR 有权
标题翻译：硅或硅锗基体上的III族氮化物生长及其方法和装置
公开(公告)号：US20080128745A1
公开(公告)日：2008-06-05
申请号：US11566288
申请日：2006-12-04
申请人： Michael A. Mastro , Charles R. Eddy , Shahzad Akbar
发明人： Michael A. Mastro , Charles R. Eddy , Shahzad Akbar
IPC分类号： H01L31/0336 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/078 , H01L31/1812 , H01L31/184 , Y02E10/544
摘要： A structure including a Si1-xGex substrate and a distributed Bragg reflector layer disposed directly onto the substrate. The distributed Bragg reflector layer includes a repeating pattern that includes at least one aluminum nitride layer and a second layer having the general formula AlyGa1-yN. Another aspect of the present invention is various devices including this structure. Another aspect of the present invention is directed to a method of forming such a structure comprising providing a Si1-xGex substrate and depositing a distributed Bragg reflector layer directly onto the substrate. Another aspect of the present invention is directed to a photodetector or photovoltaic cell device, including a Si1-xGex substrate device, a group III-nitride device and contacts to provide a conductive path for a current generated across at least one of the Si1-xGex substrate device and the group III-nitride device upon incident light.
摘要翻译：包括Si 1-x N x N x N基底的结构和直接设置在基底上的分布式布拉格反射层。分布式布拉格反射器层包括重复图案，其包括至少一个氮化铝层和具有通式Al x Ga 1-y N的第二层。本发明的另一方面是包括该结构的各种装置。本发明的另一方面涉及一种形成这种结构的方法，其包括提供Si 1-x N x N x N基底并将分布式布拉格反射层直接沉积到基质。本发明的另一方面涉及一种光电检测器或光伏电池器件，其包括Si 1-x N x N x N x衬底器件，III族氮化物器件和与为入射光中的Si 1-x N x N x衬底器件和III族氮化物器件中的至少一个产生的电流提供导电路径。

8. 发明申请

US20070148558A1 Double metal collimated photo masks, diffraction gratings, optics system, and method related thereto 审中-公开
$Double metal collimated photo masks, diffraction gratings, optics system, and method related thereto$
标题翻译：双金属准直光掩膜，衍射光栅，光学系统及其相关方法
公开(公告)号：US20070148558A1
公开(公告)日：2007-06-28
申请号：US11318712
申请日：2005-12-27
申请人： Shahzad Akbar
发明人： Shahzad Akbar
IPC分类号： G03F9/00 , G03F1/00
CPC分类号： G03F7/70325 , G03F1/50 , G03F1/60 , G03F7/70283 , Y10T428/24802
摘要： A photo mask having at least 2 mask pattern layers disposed to collimate light patterns passing through the mask. An improved optical photo lithographic system utilizing light collimating photo masks to improve resolution, depth of focus and field size. A method of manufacturing integrated circuit chips utilizing light collimating photo mask technology.
摘要翻译：具有至少2个掩模图案层的光掩模，其设置成准直通过掩模的光图案。改进的光学光刻系统利用光准直光掩模来提高分辨率，焦深和场尺寸。利用光准直光掩模技术制造集成电路芯片的方法。

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