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1. 发明授权

US5679963A Semiconductor tunnel junction with enhancement layer 失效
标题翻译：半导体隧道结与增强层
公开(公告)号：US5679963A
公开(公告)日：1997-10-21
申请号：US567678
申请日：1995-12-05
申请人： John F. Klem , John C. Zolper
发明人： John F. Klem , John C. Zolper
IPC分类号： H01L29/205 , H01L29/88 , H01L31/06 , H01L31/0693 , H01L31/0735 , H01L33/00 , H01L29/40 , H01L31/0328
CPC分类号： H01L31/0693 , H01L29/205 , H01L29/88 , H01L31/06 , H01L31/0735 , H01L33/0016 , H01L33/0025 , H01S5/3095 , Y02E10/544
摘要： The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.
摘要翻译：在通孔二极管结构中掺入假晶GaAsSb层，为p-n结器件互连设计漏极结提供了新的自由度。以前只有掺杂水平可以变化来控制隧道性质。本发明使用GaAsSb相对于周围材料的价带对准带来大大地缓解了隧道掺杂的要求。

2. 发明授权

US5866925A Gallium nitride junction field-effect transistor 失效
标题翻译：氮化镓结场效应晶体管
公开(公告)号：US5866925A
公开(公告)日：1999-02-02
申请号：US781068
申请日：1997-01-09
申请人： John C. Zolper , Randy J. Shul
发明人： John C. Zolper , Randy J. Shul
IPC分类号： H01L21/265 , H01L21/337 , H01L29/10 , H01L29/20 , H01L29/808 , H01L29/80
CPC分类号： H01L29/66924 , H01L21/2656 , H01L29/1075 , H01L29/20 , H01L29/808
摘要： An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.
摘要翻译：全离子注入氮化镓（GaN）结场效应晶体管（JFET）及其制造方法。还公开了在选定的III-V半导体材料中的各种离子植入物，包括n型和p型，以及磷共注入。

3. 发明授权

US6083781A Method for manufacturing compound semiconductor field-effect transistors with improved DC and high frequency performance 失效
标题翻译：具有改善的直流和高频性能的化合物半导体场效应晶体管的制造方法
公开(公告)号：US6083781A
公开(公告)日：2000-07-04
申请号：US941264
申请日：1997-10-01
申请人： John C. Zolper , Marc E. Sherwin , Albert G. Baca
发明人： John C. Zolper , Marc E. Sherwin , Albert G. Baca
IPC分类号： H01L21/265 , H01L21/338
CPC分类号： H01L29/66863 , H01L21/26546
摘要： A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.
摘要翻译：公开了一种用于制造包括使用p型掺杂剂的化合物半导体器件的方法，其中在形成n沟道时，掺杂剂与n型供体物质共注入，然后在中等温度下进行单次退火执行。还公开了使用该方法制造的装置。在优选实施例中，使用在GaAs中共同注入Si原子的C离子来制造n-MESFET和其它类似的场效应晶体管器件，以形成n沟道。 C在本发明的上下文中表现出独特的特征，因为它表现出作为p型掺杂剂的低活化效率（通常为50％或更少），因此，其作用是通过补偿Si供体来锐化Si n通道在Si通道尾部的区域中，但是对掩埋p区的受主浓度没有显着贡献。结果，本发明提供了具有增强的直流和高频性能的改进的场效应半导体和相关器件。

4. 发明授权

US5998781A Apparatus for millimeter-wave signal generation 失效
标题翻译：毫米波信号产生装置
公开(公告)号：US5998781A
公开(公告)日：1999-12-07
申请号：US846370
申请日：1997-04-30
申请人： G. Allen Vawter , Vincent M. Hietala , John C. Zolper , Alan Mar , John P. Hohimer
发明人： G. Allen Vawter , Vincent M. Hietala , John C. Zolper , Alan Mar , John P. Hohimer
IPC分类号： H03C1/34 , G01J1/04
CPC分类号： H03C1/34
摘要： An opto-electronic integrated circuit (OEIC) apparatus is disclosed for generating an electrical signal at a frequency .gtoreq.10 GHz. The apparatus, formed on a single substrate, includes a semiconductor ring laser for generating a continuous train of mode-locked lasing pulses and a high-speed photodetector for detecting the train of lasing pulses and generating the electrical signal therefrom. Embodiments of the invention are disclosed with an active waveguide amplifier coupling the semiconductor ring laser and the high-speed photodetector. The invention has applications for use in OEICs and millimeter-wave monolithic integrated circuits (MMICs).
摘要翻译：公开了一种用于产生频率≥10GHz的电信号的光电集成电路（OEIC）装置。形成在单个基板上的装置包括用于产生连续的锁模激光脉冲序列的半导体环形激光器和用于检测激光脉冲串并从其产生电信号的高速光电探测器。公开了耦合半导体环形激光器和高速光电检测器的有源波导放大器的本发明的实施例。本发明适用于OEIC和毫米波单片集成电路（MMIC）。

5. 发明授权

US4876210A Solution growth of lattice mismatched and solubility mismatched heterostructures 失效
标题翻译：晶格失配和溶解度错配异质结构的溶液生长
公开(公告)号：US4876210A
公开(公告)日：1989-10-24
申请号：US163897
申请日：1988-03-04
申请人： Allen M. Barnett , John C. Zolper
发明人： Allen M. Barnett , John C. Zolper
IPC分类号： H01L21/20 , H01L31/0693 , H01L31/18 , H01L33/00
CPC分类号： H01L33/0066 , H01L21/02381 , H01L21/0245 , H01L21/02463 , H01L21/02546 , H01L21/02628 , H01L21/02639 , H01L31/0693 , H01L31/1852 , Y02E10/544 , Y10S148/059 , Y10S148/066 , Y10S438/902 , Y10S438/933 , Y10S438/955 , Y10S438/974
摘要： The effects of excessive lattice mismatch in solution grown heterostructures are reduced by incorporating a lattice graded interface layer between the substrate and the heteroepitaxial layer. The effects of lattice mismatch are also reduced by reducing the contact area with a selective growth mask which controls where growth initiates on the substrate. The effect of mismatched solubility is reduced by double saturation of the solvent and selective supersaturation of the solvent.
摘要翻译：通过在衬底和异质外延层之间并入晶格梯度界面层来减少溶液生长的异质结构中过度晶格失配的影响。通过用选择性生长掩模减少接触面积来控制晶格失配的影响，该生长掩模控制衬底上生长起始的位置。通过溶剂的双重饱和和溶剂的选择性过饱和度降低了溶解度失配的影响。

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