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1. 发明授权

US4675467A Directed energy conversion of semiconductor materials 失效
标题翻译：半导体材料的定向能量转换
公开(公告)号：US4675467A
公开(公告)日：1987-06-23
申请号：US859505
申请日：1986-04-05
申请人： John E. Van Dine , Herbert A. Weakliem , Zoltan Kiss , Alan E. Delahoy
发明人： John E. Van Dine , Herbert A. Weakliem , Zoltan Kiss , Alan E. Delahoy
IPC分类号： H01L21/768 , H01L27/142 , H01L31/20 , H01L27/14 , H01L31/18
CPC分类号： H01L21/76894 , H01L21/76888 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： Directed energy conversion of semiconductors by the directed energy fusion of a selective region of a semiconductor layer to provide a conductive path through the layer. A conductive path is formed through a semiconductive layer through opposed electrodes by conversion of the semiconductive region, for example, by laser energy applied to change the structure in the region extending between the electrodes. The change in conductivity of the path is monitored and used to control the formation of the conductive path by controlling the directed energy source.
摘要翻译：通过半导体层的选择性区域的定向能量融合来提供半导体的导电能量转换以提供通过该层的导电路径。通过半导体区域的转换，例如通过施加激光能量来改变在电极之间延伸的区域中的结构，通过相对电极形成导电路径。监测路径的电导率变化，并通过控制定向能源来控制导电路径的形成。

2. 发明授权

US4873119A Catalytic deposition of semiconductors 失效
标题翻译：催化沉积半导体
公开(公告)号：US4873119A
公开(公告)日：1989-10-10
申请号：US937032
申请日：1987-01-28
申请人： Masud Akhtar , Herbert A. Weakliem
发明人： Masud Akhtar , Herbert A. Weakliem
IPC分类号： C23C16/452
CPC分类号： C23C16/452 , Y10S438/903
摘要： The invention provides a method for preparing amorphous semiconductors by (a) activating a semiconductane gas using a activator to produce mononuclear, reactive fragments or gaseous condensation products which serve as precursors for the deposition of an amorphous semiconductor; and (b) controlling the temperature of the activator and the flow rate and temperature of the semiconductane gas so that it does not completely decompose upon the activator.
摘要翻译：本发明提供了一种通过（a）使用活化剂活化半导体气体以制备用作沉积非晶半导体的前体的单核，反应性碎片或气态缩合产物来制备非晶半导体的方法; 和（b）控制活化剂的温度和半导体气体的流速和温度，使得其不会在活化剂上完全分解。

3. 发明授权

US4450787A Glow discharge plasma deposition of thin films 失效
标题翻译：辉光放电等离子体沉积薄膜
公开(公告)号：US4450787A
公开(公告)日：1984-05-29
申请号：US386686
申请日：1984-05-29
申请人： Herbert A. Weakliem , John L. Vossen, Jr.
发明人： Herbert A. Weakliem , John L. Vossen, Jr.
IPC分类号： C23C16/503 , H01J37/32 , H01J37/34 , C23C13/08
CPC分类号： H01J37/32623 , C23C16/503 , H01J37/3408
摘要： A glow discharge plasma reactor for deposition of thin films from a reactive RF glow discharge is provided with a screen positioned between the walls of the chamber and the cathode to confine the glow discharge region to within the region defined by the screen and the cathode. A substrate for receiving deposition material from a reactive gas is positioned outside the screened region. The screen is electrically connected to the system ground to thereby serve as the anode of the system. The energy of the reactive gas species is reduced as they diffuse through the screen to the substrate. Reactive gas is conducted directly into the glow discharge region through a centrally positioned distribution head to reduce contamination effects otherwise caused by secondary reaction products and impurities deposited on the reactor walls.
摘要翻译：用于从反应性RF辉光放电沉积薄膜的辉光放电等离子体反应器设置有位于室的壁和阴极之间的屏幕，以将辉光放电区域限制在由屏幕和阴极限定的区域内。用于从反应性气体接收沉积材料的基板位于筛选区域的外部。屏幕电连接到系统接地，从而用作系统的阳极。当反应气体物质通过筛网扩散到基底时，能量减小。反应气体通过中心定位的分配头直接进入辉光放电区域，以减少否则由二次反应产物和沉积在反应器壁上的杂质引起的污染。

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