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1. 发明授权

US5552373A Josephson junction device comprising high critical temperature crystalline copper superconductive layers 失效
标题翻译：约瑟夫逊结器件包括高临界温度的结晶铜超导层
公开(公告)号：US5552373A
公开(公告)日：1996-09-03
申请号：US867063
申请日：1992-04-10
申请人： John A. Agostinelli , Jose M. Mir , Gerrit Lubberts , Samuel Chen
发明人： John A. Agostinelli , Jose M. Mir , Gerrit Lubberts , Samuel Chen
IPC分类号： H01L39/22 , H01L39/24 , H01L29/06
CPC分类号： H01L39/2496 , H01L39/225
摘要： A Josephson junction device is disclosed having a substrate upon which are located overlying and underlying high critical temperature crystalline oxide superconductive layers separated by an interposed impedance controlling layer. The underlying superconductive layer is limited to a selected area of the substrate while the overlying and interposed layers overlie only a portion of the underlying superconductive layer. Nonsuperconducting oxide layer portions laterally abut the superconductive and interposed layers. A first electrical conductor is attached to the underlying superconductive layer at a location free of overlying oxide layers, and a second electrical conductor contacts the overlying superconductive layer and extends laterally over the adjacent laterally abutting nonsuperconductive layer portion. A process is disclosed for preparing the Josephson junction device in which a Josephson junction layer sequence is deposited on a substrate, a portion of the Josephson junction layer sequence laterally abutting a selected area is converted to a nonsuperconducting form, within the selected area overlying layers are removed from the superconducting layer nearer the substrate, and an electrical conductor extends laterally from the superconducting layer farther removed from the substrate to the laterally abutting nonsuperconducting layer.
摘要翻译：公开了一种约瑟夫逊结器件，其具有衬底，位于其上并且位于由插入的阻抗控制层分开的高临界温度结晶氧化物超导层之下。底层的超导层限于衬底的选定区域，而覆盖和插入的层仅覆盖下面的超导层的一部分。非导电氧化物层部分横向邻接超导和插入的层。第一电导体在没有覆盖氧化物层的位置处附接到下面的超导层，并且第二电导体接触上覆的超导层并横向延伸在相邻的横向邻接的非超导电导层部分上。公开了一种制备约瑟夫逊结结器件的方法，其中约瑟夫逊结层序列沉积在衬底上，约束结层序列横向邻接所选区域的部分被转换为非超导形式，在覆盖层的选定区域内从超导层离开更靠近衬底的电导体，并且电导体从更远离衬底的超导层横向延伸到横向邻接的非超导层。

2. 发明授权

US5453325A Nonlinear optical waveguide multilayer structure 失效
标题翻译：非线性光波导多层结构
公开(公告)号：US5453325A
公开(公告)日：1995-09-26
申请号：US164244
申请日：1993-12-09
申请人： Liang-Sun Hung , John A. Agostinelli , Jose M. Mir , Dilip K. Chatterjee
发明人： Liang-Sun Hung , John A. Agostinelli , Jose M. Mir , Dilip K. Chatterjee
IPC分类号： G02B6/132 , G02F1/035 , G02F1/355 , B32B15/04
CPC分类号： G02F1/035 , G02B6/132 , G02F1/3558 , Y10S428/913
摘要： A multilayer structure has an a nonlinear optical film epitaxially grown on an underlying buffer layer of substantially lower refractive index. The buffer layer itself is epitaxially grown on a single crystal substrate with an intermediate epitaxial electrode.
摘要翻译：多层结构具有在基本上较低折射率的下面缓冲层上外延生长的非线性光学膜。缓冲层本身在具有中间外延电极的单晶衬底上外延生长。

3. 发明授权

US5017551A Barrier layer containing conductive articles 失效
标题翻译：包含导电制品的阻挡层
公开(公告)号：US5017551A
公开(公告)日：1991-05-21
申请号：US330409
申请日：1989-03-30
申请人： John A. Agostinelli , Jose M. Mir , Gustavo R. Paz-Pujalt , Mark Lelental , Ralph A. Nicholas, III
发明人： John A. Agostinelli , Jose M. Mir , Gustavo R. Paz-Pujalt , Mark Lelental , Ralph A. Nicholas, III
IPC分类号： B32B18/00 , C03C17/23 , C04B35/45 , C04B41/50 , C04B41/87 , C23C2/26 , C23C26/00 , H01L39/14 , H01L39/24
CPC分类号： C04B41/5025 , C03C17/23 , C04B35/4504 , C04B41/87 , C23C2/26 , C23C26/00 , H01L39/143 , H01L39/2461 , H01L39/248 , C03C2217/23 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： A circuit element is disclosed comprised of a substrate and an electrically conductive layer located on the substrate. The electrically conductive layer is comprised of a crystalline rare earth alkaline earth copper oxide. The substrate is formed of a material which increases the electrical resistance of the conductive layer when in contact with the rare earth alkaline earth copper oxide during crystallization of the latter to an electrically conductive form. A barrier layer is interposed between the electrically conductive layer and the substrate. The barrier layer contains magnesium, a group IVA metal, or a platinum group metal, either in an elemental state or in the form of an oxide or silicide. The circuit element is produced by first forming the barrier layer on the substrate followed by coating conductor precursor metal-ligand compounds of each of rare earth, alkaline earth, and copper containing at least one thermally volatilizable ligand and heating the precursor metal-ligand compounds in the presence of oxygen to produce a crystalline rare earth alkaline earth copper oxide electrically conductive layer.
摘要翻译：公开了一种电路元件，其包括衬底和位于衬底上的导电层。导电层由结晶稀土类碱土金属氧化铜构成。基板由在将其结晶化成导电形式时与稀土类碱土铜氧化物接触时增加导电层的电阻的材料形成。阻挡层介于导电层和基底之间。阻挡层含有元素状态或氧化物或硅化物形式的镁，ⅣA族金属或铂族金属。电路元件通过首先在衬底上形成阻挡层，然后涂覆含有至少一种可热挥发的配体的稀土，碱土金属和铜的每个的导体前体金属 - 配体化合物并加热前体金属 - 配体化合物氧气的存在产生结晶稀土碱土金属氧化铜导电层。

4. 发明授权

US4801194A Multiplexed array exposing system having equi-angular scan exposure regions 失效
标题翻译：具有等角度扫描曝光区域的多路阵列曝光系统
公开(公告)号：US4801194A
公开(公告)日：1989-01-31
申请号：US100059
申请日：1987-09-23
申请人： John A. Agostinelli , Jose M. Mir
发明人： John A. Agostinelli , Jose M. Mir
IPC分类号： B41J2/445 , G02F1/055 , G06K15/12 , H04N1/04 , H04N1/192 , H04N1/23 , H04N1/387 , H04N1/40 , G02F1/03 , G02F1/01
CPC分类号： H04N1/192 , G06K15/1252
摘要： A construction for reducing image artifacts in electro-optic imaging apparatus of the kind having (i) a linear array of spaced, selectively activatible, light valve elements having generally equal element widths, (ii), an optical system for forming an image of the light valve at a linear image zone and (iii) a mirror for scan-indexing the array image along said image zone. The spacings between array elements increase progressively from the center to the ends of the array to obviate under or over scan of adjacent image regions.
摘要翻译：一种用于减少电光成像设备中的图像伪像的结构，其具有（i）具有大致相同的元件宽度的间隔开的，选择性地激活的光阀元件的线性阵列，（ii）用于形成光阀在线性图像区域和（iii）用于沿着所述图像区域对阵列图像进行扫描索引的反射镜。阵列元件之间的间距从阵列的中心向端部逐渐增加，以消除邻近图像区域的下或下扫描。

5. 发明授权

US4614408A Electrooptic device for scanning and information modulating a plurality of light beams 失效
标题翻译：用于扫描和信息调制多个光束的电光装置
公开(公告)号：US4614408A
公开(公告)日：1986-09-30
申请号：US644301
申请日：1984-08-27
申请人： Jose M. Mir , John A. Agostinelli
发明人： Jose M. Mir , John A. Agostinelli
IPC分类号： G02F1/03 , G02F1/055 , G02F1/29 , G06K15/12 , H04N1/036 , H04N1/113 , H04N1/192
CPC分类号： H04N1/036 , G02F1/0551 , G02F1/0556 , G02F1/292 , G06K15/1257 , H04N1/192
摘要： An electrooptic device for scanning and information modulating a plurality of light beams across an image zone is disclosed. The device includes a substrate formed of electrooptic material that changes its birefringence in response to an electric field established therein. A time-varying electric field is established in a portion of the substrate which varies the substrate refractive index so as to deflect an incident linear light beam. The device includes a lens arrangement which forms the deflected light beam into a plurality of beams focused at the image zone, and a light valve array which has a pixel portion for each focused light beam. Voltage signals applied to selected ones of a plurality of modulating electrodes of the light valve array cause selected ones of the array pixel portions to change their birefringence and change the polarization vector of their focused light beams as the beams are scanned across the image zone.
摘要翻译：公开了一种用于扫描和信息调制跨越图像区域的多个光束的电光装置。该装置包括由电光材料形成的基板，其响应于其中建立的电场而改变其双折射。在衬底的一部分中建立时变电场，其改变衬底折射率以使入射的线性光束偏转。该装置包括将偏转光束形成为聚焦在图像区域的多个光束的透镜装置，以及具有用于每个聚焦光束的像素部分的光阀阵列。施加到光阀阵列的多个调制电极中的选定的电压信号的电压信号使得所选择的阵列像素部分中的一个改变其双折射并且在横跨图像区域扫描光束时改变其聚焦光束的偏振矢量。

6. 发明授权

US5082688A Processes of forming Ag doped conductive crystalline bismuth mixed alkaline earth copper oxide films 失效
标题翻译：形成Ag掺杂导电晶体铋混合碱土金属氧化铜薄膜的工艺
公开(公告)号：US5082688A
公开(公告)日：1992-01-21
申请号：US347607
申请日：1989-05-04
申请人： John A. Agostinelli , Liang-sun Hung , Jose M. Mir
发明人： John A. Agostinelli , Liang-sun Hung , Jose M. Mir
IPC分类号： C04B35/45 , H01L39/12 , H01L39/24
CPC分类号： H01L39/2451 , C04B35/4521 , C04B35/4525 , H01L39/126 , Y10S505/731 , Y10S505/732 , Y10S505/734
摘要： A process is disclosed of promoting the growth of crystalline bismuth mixed alkaline earth copper oxide grains in forming a conductive film by incorporating silver in the bismuth mixed alkaline earth copper oxide prior to sintering.
摘要翻译：公开了在烧结之前通过在铋混合碱土金属氧化铜中引入银而促进结晶铋混合碱土金属氧化铜颗粒在形成导电膜中的生长的方法。

7. 发明授权

US5295218A Frequency conversion in inorganic thin film waveguides by quasi-phase-matching 失效
标题翻译：无机薄膜波导通过准相位匹配进行变频
公开(公告)号：US5295218A
公开(公告)日：1994-03-15
申请号：US953926
申请日：1992-09-29
申请人： John A. Agostinelli , Mool C. Gupta , Jose M. Mir
发明人： John A. Agostinelli , Mool C. Gupta , Jose M. Mir
IPC分类号： G02F1/377 , G02B6/10 , G02F2/02
CPC分类号： G02F1/3775
摘要： A frequency converter/mixer has a crystalline substrate which supports an inorganic, crystalline, nonlinear optical thin film having a higher index of refraction than the substrate, to form an optical waveguide. Input radiation of frequency .omega..sub.1 which enters the waveguide propagates through the waveguide and exits as radiation having a different frequency .omega..sub.2. The frequency conversion of the input radiation is accomplished by first-order quasi-phase-matching the input and output signals as a result of the periodicity of the sign-alternating nonlinear dielectric susceptibility coefficient of the optical thin film over an active region of the waveguide. A method of first-order quasi-phase-matching is also disclosed.
摘要翻译：变频器/混频器具有支撑具有比衬底更高折射率的无机，结晶非线性光学薄膜的结晶衬底，以形成光波导。进入波导的频率（ω）1的输入辐射通过波导传播并作为具有不同频率（ω）2的辐射而离开。输入辐射的频率转换是通过对波导的有源区域上的光学薄膜的符号交替非线性介电磁化率系数的周期性的一阶准相位匹配来实现的。。还公开了一阶准相位匹配的方法。

8. 发明授权

US5118662A Article comprising conductive film of crystalline bismuth mixed alkaline earth oxide containing silver 失效
标题翻译：文章包含含银结晶铋混合碱土金属氧化物的导电膜
公开(公告)号：US5118662A
公开(公告)日：1992-06-02
申请号：US711778
申请日：1991-07-17
申请人： John A. Agostinelli , Liang-sun Hung , Jose M. Mir
发明人： John A. Agostinelli , Liang-sun Hung , Jose M. Mir
IPC分类号： C04B35/45 , H01L39/12 , H01L39/24
CPC分类号： C04B35/4525 , C04B35/4521 , H01L39/126 , H01L39/2451 , Y10S428/93 , Y10S505/781 , Y10S505/782
摘要： A conductive film of crystalline bismuth mixed alkaline earth oxide containing silver is disclosed. A process for promoting the growth of crystalline bismuth mixed alkaline earth oxide grains by incorporating silver prior to sintering is also disclosed.
摘要翻译：公开了含有银的结晶铋混合碱土金属氧化物的导电膜。还公开了通过在烧结之前引入银而促进结晶铋混合碱土金属氧化物颗粒的生长的方法。

9. 发明授权

US5070072A Conductive articles and processes for their preparation 失效
标题翻译：导电制品及其制备方法
公开(公告)号：US5070072A
公开(公告)日：1991-12-03
申请号：US329049
申请日：1989-03-27
申请人： Jose M. Mir , John A. Agostinelli , David L. Peterson , Gustavo R. Paz-Pujalt , Brian J. Higberg , Gopalan Rajeswaran
发明人： Jose M. Mir , John A. Agostinelli , David L. Peterson , Gustavo R. Paz-Pujalt , Brian J. Higberg , Gopalan Rajeswaran
IPC分类号： B32B18/00 , C03C17/23 , C04B35/45 , C04B41/50 , C04B41/87 , C23C2/26 , C23C26/00 , H01L39/24
CPC分类号： C04B41/5025 , C03C17/23 , C04B35/4504 , C04B41/87 , C23C2/26 , C23C26/00 , H01L39/248 , C03C2217/23 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T428/24917
摘要： Articles are disclosed in which an electrically conductive layer on a substrate exhibits a superconducting transition temperature in excess of 30.degree. K. Conductive layers are disclosed comprised of a crystalline rare earth alkaline earth copper oxide. Processes of preparing these articles are disclosed in which a mixed metal oxide precursor composition is coated and heated to its thermal decomposition temperature to create an amorphous mixed metal oxide layer. The amorphous layer is then heated to its crystallization temperature.
摘要翻译：公开了其中衬底上的导电层表现出超过30℃的超导转变温度的制品。公开了由结晶稀土类碱土铜氧化物组成的导电层。公开了制备这些制品的方法，其中将复合金属氧化物前体组合物涂覆并加热至其热分解温度以产生无定形混合金属氧化物层。然后将非晶层加热至其结晶温度。

10. 发明授权

US4880770A Metalorganic deposition process for preparing superconducting oxide films 失效
标题翻译：制备超导氧化膜的金属有机沉积工艺
公开(公告)号：US4880770A
公开(公告)日：1989-11-14
申请号：US46593
申请日：1987-05-04
申请人： Jose M. Mir , John A. Agostinelli , David L. Peterson , Gustavo R. Paz-Pujalt , Brian J. Higberg , Gopalan Rajeswaran
发明人： Jose M. Mir , John A. Agostinelli , David L. Peterson , Gustavo R. Paz-Pujalt , Brian J. Higberg , Gopalan Rajeswaran
IPC分类号： B32B18/00 , C01G1/00 , C03C17/23 , C04B35/45 , C04B41/50 , C04B41/87 , C23C2/26 , C23C26/00 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24
CPC分类号： C04B41/009 , C03C17/23 , C04B35/4504 , C04B41/5025 , C04B41/87 , C23C2/26 , C23C26/00 , H01L39/248 , C03C2217/23 , C04B2111/00844
摘要： A metalorganic deposition method is disclosed for manufacturing a superconducting oxide film on a substrate, in which a mixed metalorganic precursor is coated and heated to its thermal decomposition temperature to create an amorphous mixed metal oxide layer. The amorphous layer is then converted to a crystalline coating by further heating followed by cooling in the presence of O.sub.2 atmosphere.

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