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1. 发明授权

US5552373A Josephson junction device comprising high critical temperature crystalline copper superconductive layers 失效
标题翻译：约瑟夫逊结器件包括高临界温度的结晶铜超导层
公开(公告)号：US5552373A
公开(公告)日：1996-09-03
申请号：US867063
申请日：1992-04-10
申请人： John A. Agostinelli , Jose M. Mir , Gerrit Lubberts , Samuel Chen
发明人： John A. Agostinelli , Jose M. Mir , Gerrit Lubberts , Samuel Chen
IPC分类号： H01L39/22 , H01L39/24 , H01L29/06
CPC分类号： H01L39/2496 , H01L39/225
摘要： A Josephson junction device is disclosed having a substrate upon which are located overlying and underlying high critical temperature crystalline oxide superconductive layers separated by an interposed impedance controlling layer. The underlying superconductive layer is limited to a selected area of the substrate while the overlying and interposed layers overlie only a portion of the underlying superconductive layer. Nonsuperconducting oxide layer portions laterally abut the superconductive and interposed layers. A first electrical conductor is attached to the underlying superconductive layer at a location free of overlying oxide layers, and a second electrical conductor contacts the overlying superconductive layer and extends laterally over the adjacent laterally abutting nonsuperconductive layer portion. A process is disclosed for preparing the Josephson junction device in which a Josephson junction layer sequence is deposited on a substrate, a portion of the Josephson junction layer sequence laterally abutting a selected area is converted to a nonsuperconducting form, within the selected area overlying layers are removed from the superconducting layer nearer the substrate, and an electrical conductor extends laterally from the superconducting layer farther removed from the substrate to the laterally abutting nonsuperconducting layer.
摘要翻译：公开了一种约瑟夫逊结器件，其具有衬底，位于其上并且位于由插入的阻抗控制层分开的高临界温度结晶氧化物超导层之下。底层的超导层限于衬底的选定区域，而覆盖和插入的层仅覆盖下面的超导层的一部分。非导电氧化物层部分横向邻接超导和插入的层。第一电导体在没有覆盖氧化物层的位置处附接到下面的超导层，并且第二电导体接触上覆的超导层并横向延伸在相邻的横向邻接的非超导电导层部分上。公开了一种制备约瑟夫逊结结器件的方法，其中约瑟夫逊结层序列沉积在衬底上，约束结层序列横向邻接所选区域的部分被转换为非超导形式，在覆盖层的选定区域内从超导层离开更靠近衬底的电导体，并且电导体从更远离衬底的超导层横向延伸到横向邻接的非超导层。

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