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1. 发明授权

US4498953A Etching techniques 失效
标题翻译：蚀刻技术
公开(公告)号：US4498953A
公开(公告)日：1985-02-12
申请号：US517754
申请日：1983-07-27
申请人： Joel M. Cook , Vincent M. Donnelly , Daniel L. Flamm , Dale E. Ibbotson , John A. Mucha
发明人： Joel M. Cook , Vincent M. Donnelly , Daniel L. Flamm , Dale E. Ibbotson , John A. Mucha
IPC分类号： H01L21/302 , C04B41/53 , C09K13/08 , C23C16/44 , C23F1/12 , H01L21/3065 , H01L21/311 , H01L21/3213 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： C04B41/5346 , C09K13/08 , C23C16/4405 , C23F1/12 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137 , Y10S148/105
摘要： A highly selective--greater than 100 to 1--etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching.
摘要翻译：通过使用多原子卤素氟化物可实现对硅，钽，硅化钽和氮化钽的高选择性 - 大于100至1蚀刻。无需使用等离子体或湿蚀刻即可实现选择性。

2. 发明授权

US4397711A Crystallographic etching of III-V semiconductor materials 失效
标题翻译： III-V半导体材料的晶体刻蚀
公开(公告)号：US4397711A
公开(公告)日：1983-08-09
申请号：US432317
申请日：1982-10-01
申请人： Vincent M. Donnelly , Daniel L. Flamm , Dale E. Ibbotson
发明人： Vincent M. Donnelly , Daniel L. Flamm , Dale E. Ibbotson
IPC分类号： H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/30621 , H01L21/30617 , Y10S438/978
摘要： Crystallographic etching in III-V semiconductor materials such as GaAs is achieved, for example, by utilizing a suitable halogen containing entity such as chlorine, bromine and iodine. This crystallographic etching yields in one embodiment essentially vertical surfaces of optical quality. Therefore, the procedure is useful in fabricating integrated circuits and in producing optical devices.
摘要翻译： III-V族半导体材料（如GaAs）中的晶体刻蚀可通过例如利用合适的含卤素的实体如氯，溴和碘来实现。该晶体蚀刻在一个实施例中产生基本垂直的光学质量表面。因此，该程序在制造集成电路和制造光学器件中是有用的。

3. 发明授权

US4394237A Spectroscopic monitoring of gas-solid processes 失效
标题翻译：气固过程的光谱监测
公开(公告)号：US4394237A
公开(公告)日：1983-07-19
申请号：US284468
申请日：1981-07-17
申请人： Vincent M. Donnelly , Daniel L. Flamm , Robert F. Karlicek, Jr.
发明人： Vincent M. Donnelly , Daniel L. Flamm , Robert F. Karlicek, Jr.
IPC分类号： H01L21/302 , C23C16/52 , C23F4/00 , G01N21/64 , H01L21/205 , H01L21/3065 , H01L21/31 , C23C15/00
CPC分类号： G01N21/6402 , C23C16/52 , C23F4/00
摘要： A method for accurately monitoring and adjusting gas phase processes such as gas etching and chemical vapor deposition has been found. This method relies on the use of induced fluorescence. The gaseous phase used in the process to be monitored is probed by excitation with a suitable energy source. The emission from the gas phase induced through this excitation is then monitored and yields an accurate measure of concentration of the active species present. In turn the conditions of the fabrication process are adjusted based on these discerned concentrations.
摘要翻译：已经发现了用于精确地监测和调节诸如气体蚀刻和化学气相沉积的气相过程的方法。该方法依赖于诱导荧光的使用。用于监测过程中所用的气相通过用合适的能量源进行激发来探测。然后监测通过该激发诱导的气相的排放，并产生存在的活性物质的浓度的精确测量。反过来，基于这些识别的浓度调整制造过程的条件。

4. 发明授权

US4377436A Plasma-assisted etch process with endpoint detection 失效
标题翻译：等离子辅助蚀刻工艺与端点检测
公开(公告)号：US4377436A
公开(公告)日：1983-03-22
申请号：US318329
申请日：1981-11-05
申请人： Vincent M. Donnelly , Daniel L. Flamm
发明人： Vincent M. Donnelly , Daniel L. Flamm
IPC分类号： G01N21/76 , H01J37/32 , H01L21/306 , C23C15/00
CPC分类号： H01J37/32935 , G01N21/76
摘要： Endpoint detection during plasma-assisted etching is signalled by cessation or onset of spatially confined luminescence resulting from an etch reaction product. Sensitivity of the system is aided by an optically focused detector which selectively detects such fluorescence as associated with one or a small number of lithographic features.
摘要翻译：在等离子体辅助蚀刻期间的端点检测通过由蚀刻反应产物产生的空间限制的发光的停止或起始发出。通过选择性地检测与一个或少量光刻特征相关的这种荧光的光学聚焦检测器来辅助系统的灵敏度。

5. 发明授权

US4359485A Radiation induced deposition of metal on semiconductor surfaces 失效
标题翻译：辐射诱导金属在半导体表面上的沉积
公开(公告)号：US4359485A
公开(公告)日：1982-11-16
申请号：US259428
申请日：1981-05-01
申请人： Vincent M. Donnelly , Robert F. Karlicek, Jr.
发明人： Vincent M. Donnelly , Robert F. Karlicek, Jr.
IPC分类号： H01L21/285 , C23C18/14 , H01L21/268 , H01L21/288 , B05D1/18 , B05D3/06
CPC分类号： H01L21/288 , C23C18/14 , Y10S148/094 , Y10S148/14
摘要： A metal layer is formed on a surface of a Group III-V compound semiconductor by placing the surface in contact with a metal-containing solution and directing laser radiation through the solution. The radiation has a wavelength which is absorbed in the surface, thereby thermally inducing a chemical reaction between the surface and the solution and causing metal from the solution to be deposited on the surface. Specific examples of the deposition of Pt, Au and Zn on InP and GaAs are described.
摘要翻译：通过将表面与含金属溶液接触并引导激光辐射通过溶液，在III-V族化合物半导体的表面上形成金属层。辐射具有在表面中被吸收的波长，从而在表面和溶液之间引起化学反应，并导致来自溶液的金属沉积在表面上。描述了在InP和GaAs上沉积Pt，Au和Zn的具体实例。

6. 发明授权

US07638759B2 Hyperthermal neutral beam source and method of operating 失效
标题翻译：超热中性束源及其操作方法
公开(公告)号：US07638759B2
公开(公告)日：2009-12-29
申请号：US12032865
申请日：2008-02-18
申请人： Demetre J. Economou , Lee Chen , Vincent M. Donnelly
发明人： Demetre J. Economou , Lee Chen , Vincent M. Donnelly
IPC分类号： H05H3/00
CPC分类号： H05H3/02 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.
摘要翻译：描述了用于泵送超热中性束源的方法和系统。泵送系统能够使用超热中性束源用于半导体处理应用，例如蚀刻工艺。描述了具有通过中和网格耦合到处理室的中性束源的实施例。通过分别泵送中性束源和处理室来提供控制。

7. 发明申请

US20080135742A1 HYPERTHERMAL NEUTRAL BEAM SOURCE AND METHOD OF OPERATING 失效
标题翻译：超中性光束源和操作方法
公开(公告)号：US20080135742A1
公开(公告)日：2008-06-12
申请号：US12032865
申请日：2008-02-18
申请人： Demetre J. Economou , Lee Chen , Vincent M. Donnelly
发明人： Demetre J. Economou , Lee Chen , Vincent M. Donnelly
IPC分类号： H05H3/00 , H01J37/04
CPC分类号： H05H3/02 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.
摘要翻译：描述了用于泵送超热中性束源的方法和系统。泵送系统能够使用超热中性束源用于半导体处理应用，例如蚀刻工艺。描述了具有通过中和网格耦合到处理室的中性束源的实施例。通过分别泵送中性束源和处理室来提供控制。

8. 发明授权

US08968588B2 Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatus 有权
标题翻译：低电子温度微波表面波等离子体（SWP）处理方法及装置
公开(公告)号：US08968588B2
公开(公告)日：2015-03-03
申请号：US13436458
申请日：2012-03-30
申请人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
发明人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32293 , H05H1/46 , H05H2001/4615 , H05H2001/463
摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.
摘要翻译：表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

9. 发明申请

US20130256272A1 LOW ELECTRON TEMPERATURE MICROWAVE SURFACE-WAVE PLASMA (SWP) PROCESSING METHOD AND APPARATUS 有权
标题翻译：低电子温度微波表面波等离子体（SWP）处理方法和装置
公开(公告)号：US20130256272A1
公开(公告)日：2013-10-03
申请号：US13436458
申请日：2012-03-30
申请人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
发明人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
IPC分类号： H05H1/24 , B44C1/22 , C23C16/511 , C23C16/52
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32293 , H05H1/46 , H05H2001/4615 , H05H2001/463
摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.
摘要翻译：表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

10. 发明授权

US08030620B2 System and method for nano-pantography 有权
标题翻译：纳米抄本的系统和方法
公开(公告)号：US08030620B2
公开(公告)日：2011-10-04
申请号：US12435545
申请日：2009-05-05
申请人： Vincent M. Donnelly , Demetre J. Economou , Paul Ruchhoeft , Lin Xu , Sri Charan Vemula , Manish Kumar Jain
发明人： Vincent M. Donnelly , Demetre J. Economou , Paul Ruchhoeft , Lin Xu , Sri Charan Vemula , Manish Kumar Jain
IPC分类号： H01J3/26 , G21K1/08
CPC分类号： B29D11/00365 , B82Y30/00
摘要： A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e.g., a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.
摘要翻译：提供了一种用于以基本上平行的方式产生多个基本均匀的纳米尺度特征的方法，其中微透镜阵列位于基底的表面上，其中每个微透镜包括孔，使得底部孔对应于基板表面的一部分。带电粒子的通量，例如所选元素的正离子束，被施加到微透镜阵列。带电粒子的通量被聚焦在微透镜阵列的孔的底部的基底表面上的选定的焦点处。衬底以一个或多个选定的角度倾斜，以便将焦点的位置移动穿过衬底表面。通过沉积材料或蚀刻衬底的表面，可以以基本上平行的方式在衬底表面上的每个孔中快速产生几个基本均匀的纳米尺寸的特征。

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