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    • 4. 发明申请
    • CMOS IMAGE SENSOR
    • CMOS图像传感器
    • US20110194007A1
    • 2011-08-11
    • US12781739
    • 2010-05-17
    • Byung Hoon KIMJinwook BurmWon Tae Choi
    • Byung Hoon KIMJinwook BurmWon Tae Choi
    • H04N5/335
    • H04N5/3575H04N5/3745H04N5/378
    • Disclosed herein is a Complementary Metal-Oxide Semiconductor (CMOS) image sensor. The CMOS image sensor includes a pixel array, a frame memory, and an analog-to-digital converter. The pixel array includes N unit pixels for converting optical signals, caused by light, into electric signals. The frame memory eliminates offset voltage included in reset voltage and signal voltage transmitted from the pixel array and internal offset voltage, and performs Correlated Double Sampling (CDS) on the reset voltage and the signal voltage. The analog-to-digital converter converts an analog signal, transmitted from the frame memory, into a digital signal.
    • 本文公开了互补金属氧化物半导体(CMOS)图像传感器。 CMOS图像传感器包括像素阵列,帧存储器和模数转换器。 像素阵列包括用于将由光引起的光信号转换为电信号的N个单位像素。 帧存储器消除复位电压中包含的偏移电压和从像素阵列传输的信号电压和内部偏移电压,并对复位电压和信号电压执行相关双采样(CDS)。 模数转换器将从帧存储器发送的模拟信号转换为数字信号。