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    • 4. 发明申请
    • SEMICONDUCTOR DEVICES INCLUDING WORD LINE INTERCONNECTING STRUCTURES
    • 包括字线互连结构的半导体器件
    • US20140306279A1
    • 2014-10-16
    • US14191542
    • 2014-02-27
    • Jintaek ParkYoungwoo ParkJaeduk Lee
    • Jintaek ParkYoungwoo ParkJaeduk Lee
    • H01L23/00H01L27/115
    • H01L27/11556H01L27/11582H01L29/7889H01L29/7926
    • A semiconductor memory device includes a substrate including a cell region and an interconnection region, adjacent first and second rows of vertical channels extending vertically from the substrate in the cell region, and layers of word lines stacked on the substrate. Each layer includes a first word line through which the first row of vertical channels passes and a second word line through which the second row of vertical channels passes, and the word lines include respective word line pads extending into the interconnection region. An isolation pattern separates the first and second word lines in the cell region and the interconnection region. First and second pluralities of contact plugs are disposed on opposite sides of the isolation pattern in the interconnection region and contact the word line pads.
    • 半导体存储器件包括:衬底,其包括单元区域和互连区域;相邻的从单元区域中的衬底垂直延伸的第一和第二排垂直沟道以及堆叠在衬底上的字线层。 每层包括第一行垂直通道通过的第一字线和第二行垂直通道通过的第二字线,并且字线包括延伸到互连区域中的相应字线焊盘。 隔离图案分离单元区域和互连区域中的第一和第二字线。 第一和第二多个接触插塞设置在互连区域中的隔离图案的相对侧上,并与字线焊盘接触。
    • 5. 发明申请
    • NONVOLATILE MEMORY INCLUDING MEMORY CELL ARRAY HAVING THREE-DIMENSIONAL STRUCTURE
    • 非易失性存储器,包括具有三维结构的存储器单元阵列
    • US20140151783A1
    • 2014-06-05
    • US14080823
    • 2013-11-15
    • Jintaek ParkYoungwoo Park
    • Jintaek ParkYoungwoo Park
    • H01L27/115
    • H01L27/11578H01L27/11551H01L27/2481H01L29/4234H01L29/792
    • A nonvolatile memory is provided which includes a plurality of channel layers and a plurality of insulation layers alternately stacked on a substrate in a direction perpendicular to the substrate, each of the plurality of channel layers including a plurality of channel films extending along a first direction on a plane parallel with the substrate; a plurality of conductive materials extending from a top of the channel layers and the insulation layers up to a portion adjacent to the substrate in a direction perpendicular to the substrate through areas among channel films of each channel layer; a plurality of information storage films provided between the channel films of the channel layers and the conductive materials; and a plurality of bit lines connected to the channel layers, respectively, wherein the conductive materials, the information storage films, and the channel films of the channel layers form a three-dimensional memory cell array, wherein the conductive materials form a plurality of groups, and wherein a distance between the groups is longer than a distance between conductive materials in each other.
    • 提供了一种非易失性存储器,其包括多个通道层和多个绝缘层,所述多个绝缘层沿垂直于所述衬底的方向交替堆叠在衬底上,所述多个沟道层中的每一个包括沿着第一方向延伸的多个沟道膜 与基板平行的平面; 多个导电材料,其从沟道层的顶部和绝缘层延伸到与基板垂直的方向上的与衬底相邻的部分,通过每个沟道层的沟道膜之间的区域; 设置在沟道层的沟道膜和导电材料之间的多个信息存储膜; 以及分别连接到沟道层的多个位线,其中沟道层的导电材料,信息存储膜和沟道膜形成三维存储单元阵列,其中导电材料形成多个组 并且其中所述组之间的距离长于彼此之间的导电材料之间的距离。
    • 7. 发明授权
    • Nonvolatile memory including memory cell array having three-dimensional structure
    • 包括具有三维结构的存储单元阵列的非易失性存储器
    • US08987832B2
    • 2015-03-24
    • US14080823
    • 2013-11-15
    • Jintaek ParkYoungwoo Park
    • Jintaek ParkYoungwoo Park
    • H01L27/088H01L27/115H01L27/24H01L29/423H01L29/792
    • H01L27/11578H01L27/11551H01L27/2481H01L29/4234H01L29/792
    • A nonvolatile memory is provided which includes a plurality of channel layers and a plurality of insulation layers alternately stacked on a substrate in a direction perpendicular to the substrate, each of the plurality of channel layers including a plurality of channel films extending along a first direction on a plane parallel with the substrate; a plurality of conductive materials extending from a top of the channel layers and the insulation layers up to a portion adjacent to the substrate in a direction perpendicular to the substrate through areas among channel films of each channel layer; a plurality of information storage films provided between the channel films of the channel layers and the conductive materials; and a plurality of bit lines connected to the channel layers, respectively, wherein the conductive materials, the information storage films, and the channel films of the channel layers form a three-dimensional memory cell array, wherein the conductive materials form a plurality of groups, and wherein a distance between the groups is longer than a distance between conductive materials in each other.
    • 提供了一种非易失性存储器,其包括多个通道层和多个绝缘层,所述多个绝缘层沿垂直于所述衬底的方向交替堆叠在衬底上,所述多个沟道层中的每一个包括沿着第一方向延伸的多个沟道膜 与基板平行的平面; 多个导电材料,其从沟道层的顶部和绝缘层延伸到与基板垂直的方向上的与衬底相邻的部分,通过每个沟道层的沟道膜之间的区域; 设置在沟道层的沟道膜和导电材料之间的多个信息存储膜; 以及分别连接到沟道层的多个位线,其中沟道层的导电材料,信息存储膜和沟道膜形成三维存储单元阵列,其中导电材料形成多个组 并且其中所述组之间的距离长于彼此之间的导电材料之间的距离。