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1. 发明申请

US20050066585A1 High-rate barrier polishing composition 有权
标题翻译：高阻挡抛光组合物
公开(公告)号：US20050066585A1
公开(公告)日：2005-03-31
申请号：US10670534
申请日：2003-09-25
申请人： Jinru Bian , Kai Hu , Hugh Li , Zhendong Liu , John Quanci , Matthew VanHanehem
发明人： Jinru Bian , Kai Hu , Hugh Li , Zhendong Liu , John Quanci , Matthew VanHanehem
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/3105 , H01L21/321 , B24D3/02
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.
摘要翻译：该解决方案可用于从半导体衬底去除阻挡材料。该溶液包含0.01-25重量％的氧化剂，0至15的有色金属抑制剂，0至15份磨料，0至20种有色金属络合剂，0.01至12种屏障去除剂和余量水。屏障去除剂选自亚胺衍生物化合物，肼衍生物化合物及其混合物。

2. 发明授权

US07300480B2 High-rate barrier polishing composition 有权
标题翻译：高阻挡抛光组合物
公开(公告)号：US07300480B2
公开(公告)日：2007-11-27
申请号：US10670534
申请日：2003-09-25
申请人： Jinru Bian , Kai Hu , Hugh Li , Zhendong Liu , John Quanci , Matthew R. VanHanehem
发明人： Jinru Bian , Kai Hu , Hugh Li , Zhendong Liu , John Quanci , Matthew R. VanHanehem
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.
摘要翻译：该解决方案可用于从半导体衬底去除阻挡材料。该溶液包含0.01-25重量％的氧化剂，0至15的有色金属抑制剂，0至15份磨料，0至20种有色金属络合剂，0.01至12种屏障去除剂和余量水。屏障去除剂选自亚胺衍生物化合物，肼衍生物化合物及其混合物。

3. 发明授权

US07842192B2 Multi-component barrier polishing solution 有权
标题翻译：多组分屏障抛光液
公开(公告)号：US07842192B2
公开(公告)日：2010-11-30
申请号：US11349863
申请日：2006-02-08
申请人： Jinru Bian , Zhendong Liu
发明人： Jinru Bian , Zhendong Liu
IPC分类号： C09K13/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quanternary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.
摘要翻译：在至少一种具有有限的电介质腐蚀的有色互连金属的存在下，抛光溶液可用于去除阻挡材料。该溶液含有0至20重量百分比的氧化剂，至少0.001重量％的用于降低有色互连金属去除速率的抑制剂，1ppm至4重量％的由铵季铵结构形成的含铵阳离子盐，1ppm至4重量％阴离子表面活性剂，阴离子表面活性剂具有4至25个碳原子，铵阳离子盐加阴离子表面活性剂的总碳原子数为6至40个碳原子，0至50重量％的研磨剂和余量的水; 并且该溶液的pH值小于7。

4. 发明申请

US20070184661A1 Multi-component barrier polishing solution 有权
标题翻译：多组分屏障抛光液
公开(公告)号：US20070184661A1
公开(公告)日：2007-08-09
申请号：US11349863
申请日：2006-02-08
申请人： Jinru Bian , Zhendong Liu
发明人： Jinru Bian , Zhendong Liu
IPC分类号： C09K13/00 , H01L21/461 , B44C1/22
CPC分类号： H01L21/3212 , C09G1/02
摘要： The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quantenary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.
摘要翻译：在至少一种具有有限的电介质腐蚀的有色互连金属的存在下，抛光溶液可用于去除阻挡材料。该溶液含有0至20重量百分比的氧化剂，至少0.001重量％的用于降低有色互连金属去除速率的抑制剂，1ppm至4重量％的有机铵阳离子盐，其形成量为1ppm至4重量％阴离子表面活性剂，阴离子表面活性剂具有4至25个碳原子，铵阳离子盐加阴离子表面活性剂的总碳原子数为6至40个碳原子，0至50重量％的研磨剂和余量的水; 并且该溶液的pH值小于7。

5. 发明授权

US06971945B2 Multi-step polishing solution for chemical mechanical planarization 失效
标题翻译：用于化学机械平面化的多步抛光溶液
公开(公告)号：US06971945B2
公开(公告)日：2005-12-06
申请号：US10785362
申请日：2004-02-23
申请人： Zhendong Liu , John Quanci , Robert E. Schmidt , Terence M. Thomas
发明人： Zhendong Liu , John Quanci , Robert E. Schmidt , Terence M. Thomas
IPC分类号： B24B37/00 , B24B1/00 , B44C1/22 , C09K3/14 , C23F1/00 , H01L21/304
CPC分类号： C23F3/06 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： The present invention provides a multi-step aqueous composition useful for polishing a tantalum barrier material and copper from a semiconductor wafer, comprising by weight percent 0.1 to 30 oxidizer, 0.01 to 3 inorganic salt or acid, 0.01 to 4 inhibitor, 0.1 to 30 abrasive, 0 to 15 complexing agent and balance water, wherein the aqueous composition has a pH between 1.5 to 6.
摘要翻译：本发明提供了一种用于从半导体晶片抛光钽阻挡材料和铜的多步水性组合物，其包含重量百分比为0.1至30的氧化剂，0.01至3种无机盐或酸，0.01至4种抑制剂，0.1至30种研磨剂 0〜15络合剂和余量水，其中，所述水性组合物的pH为1.5〜6。

6. 发明申请

US20050031789A1 Composition for polishing semiconductor layers 有权
标题翻译：用于研磨半导体层的组合物
公开(公告)号：US20050031789A1
公开(公告)日：2005-02-10
申请号：US10634437
申请日：2003-08-05
申请人： Zhendong Liu , John Quanci
发明人： Zhendong Liu , John Quanci
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/3105 , H01L21/321 , B05D3/04 , B05D3/10
CPC分类号： C09G1/02 , H01L21/31053 , H01L21/3212
摘要： An aqueous polishing composition comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH. The composition includes an organic-containing ammonium salt formed with R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of 2 to 15 carbon atoms. The organic-containing ammonium salt has a concentration that accelerates TEOS removal and decreases removal of at least one coating selected from the group consisting of SiC, SiCN, Si3N4 and SiCO.
摘要翻译：水性抛光组合物包含用于限制去除具有酸性pH的互连金属的腐蚀抑制剂。该组合物包括由R 1，R 2，R 3和R 4形成的含有机铵铵盐为自由基，R 1具有2至15个碳原子的碳链长度。含有机铵盐具有加速TEOS去除并降低从SiC，SiCN，Si 3 N 4和SiCO组成的组中选择的至少一种涂层的去除的浓度。

7. 发明申请

US20060110923A1 Barrier polishing solution 审中-公开
标题翻译：阻隔抛光液
公开(公告)号：US20060110923A1
公开(公告)日：2006-05-25
申请号：US10996684
申请日：2004-11-24
申请人： Zhendong Liu , John Quanci , Robert Schmidt
发明人： Zhendong Liu , John Quanci , Robert Schmidt
IPC分类号： C09K13/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/3212 , C09G1/02
摘要： The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, inhibitor for reducing removal rate of the nonferrous interconnect metals, ammonium salt, 0.1 to 50 weight percent silica containing 0.001 to 1 ppm sodium and 0.001 to 1 ppm potassium, and balance water; and the solution having a pH of less than 3 with an inorganic acid used as a titrant.
摘要翻译：在有侵蚀电介质的有色互连金属的存在下，抛光溶液可用于优先除去阻挡材料。抛光液含有0-20％（重量）的氧化剂，用于降低有色互连金属的去除率的抑制剂，铵盐，含有0.001至1ppm的钠和0.001至1ppm的钾的0.1至50重量％的二氧化硅和余量的水; 并且使用无机酸作为滴定剂的pH小于3的溶液。

8. 发明授权

US07018560B2 Composition for polishing semiconductor layers 有权
标题翻译：用于研磨半导体层的组合物
公开(公告)号：US07018560B2
公开(公告)日：2006-03-28
申请号：US10634437
申请日：2003-08-05
申请人： Zhendong Liu , John Quanci
发明人： Zhendong Liu , John Quanci
IPC分类号： C09K13/06
CPC分类号： C09G1/02 , H01L21/31053 , H01L21/3212
摘要： An aqueous polishing composition comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH. The composition includes an organic-containing ammonium salt formed with R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of 2 to 15 carbon atoms. The organic-containing ammonium salt has a concentration that accelerates TEOS removal and decreases removal of at least one coating selected from the group consisting of SiC, SiCN, Si3N4 and SiCO.
摘要翻译：水性抛光组合物包含用于限制去除具有酸性pH的互连金属的腐蚀抑制剂。该组合物包括由R 1，R 2，R 3和R 4形成的含有机铵盐，是基团，R 1具有2至15个碳原子的碳链长度。含有机铵铵盐具有加速TEOS去除并降低至少一种选自由SiC，SiCN，Si 3 N 4 N和S 3组成的组中的至少一种涂层的去除的浓度， SiCO。

9. 发明授权

US07253111B2 Barrier polishing solution 有权
标题翻译：阻隔抛光液
公开(公告)号：US07253111B2
公开(公告)日：2007-08-07
申请号：US10830268
申请日：2004-04-21
申请人： Zhendong Liu , John Quanci , Robert E. Schmidt , Terence M. Thomas
发明人： Zhendong Liu , John Quanci , Robert E. Schmidt , Terence M. Thomas
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 10 ppb to 4 weight percent complexing agent, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.
摘要翻译：在有侵蚀电介质的有色互连金属的存在下，抛光溶液可用于优先除去阻挡材料。抛光溶液包含0至20重量％的氧化剂，至少0.001重量％的抑制剂，用于降低有色互连金属的去除速率，10ppb至4重量％的络合剂，0至50重量％的研磨剂和余量的水; 并且该溶液的pH值小于7。

10. 发明申请

US20050194357A1 MULTI-STEP POLISHING SOLUTION FOR CHEMICAL MECHANICAL PLANARIZATION 失效
标题翻译：用于化学机械平面化的多步抛光解决方案
公开(公告)号：US20050194357A1
公开(公告)日：2005-09-08
申请号：US10785362
申请日：2004-02-23
申请人： Zhendong Liu , John Quanci , Robert Schmidt , Terence Thomas
发明人： Zhendong Liu , John Quanci , Robert Schmidt , Terence Thomas
IPC分类号： B24B37/00 , B24B1/00 , B44C1/22 , C09K3/14 , C23F1/00 , H01L21/304
CPC分类号： C23F3/06 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： The present invention provides a multi-step aqueous composition useful for polishing a tantalum barrier material and copper from a semiconductor wafer, comprising by weight percent 0.1 to 30 oxidizer, 0.01 to 3 inorganic salt or acid, 0.01 to 4 inhibitor, 0.1 to 30 abrasive, 0 to 15 complexing agent and balance water, wherein the aqueous composition has a pH between 1.5 to 6.
摘要翻译：本发明提供了一种用于从半导体晶片抛光钽阻挡材料和铜的多步水性组合物，其包含重量百分比为0.1至30的氧化剂，0.01至3种无机盐或酸，0.01至4种抑制剂，0.1至30种研磨剂 0〜15络合剂和余量水，其中，所述水性组合物的pH为1.5〜6。

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