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1. 发明申请

US20050066585A1 High-rate barrier polishing composition 有权
标题翻译：高阻挡抛光组合物
公开(公告)号：US20050066585A1
公开(公告)日：2005-03-31
申请号：US10670534
申请日：2003-09-25
申请人： Jinru Bian , Kai Hu , Hugh Li , Zhendong Liu , John Quanci , Matthew VanHanehem
发明人： Jinru Bian , Kai Hu , Hugh Li , Zhendong Liu , John Quanci , Matthew VanHanehem
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/3105 , H01L21/321 , B24D3/02
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.
摘要翻译：该解决方案可用于从半导体衬底去除阻挡材料。该溶液包含0.01-25重量％的氧化剂，0至15的有色金属抑制剂，0至15份磨料，0至20种有色金属络合剂，0.01至12种屏障去除剂和余量水。屏障去除剂选自亚胺衍生物化合物，肼衍生物化合物及其混合物。

2. 发明授权

US07300480B2 High-rate barrier polishing composition 有权
标题翻译：高阻挡抛光组合物
公开(公告)号：US07300480B2
公开(公告)日：2007-11-27
申请号：US10670534
申请日：2003-09-25
申请人： Jinru Bian , Kai Hu , Hugh Li , Zhendong Liu , John Quanci , Matthew R. VanHanehem
发明人： Jinru Bian , Kai Hu , Hugh Li , Zhendong Liu , John Quanci , Matthew R. VanHanehem
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053
摘要： The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.
摘要翻译：该解决方案可用于从半导体衬底去除阻挡材料。该溶液包含0.01-25重量％的氧化剂，0至15的有色金属抑制剂，0至15份磨料，0至20种有色金属络合剂，0.01至12种屏障去除剂和余量水。屏障去除剂选自亚胺衍生物化合物，肼衍生物化合物及其混合物。

3. 发明申请

US20050282390A1 Polishing composition for semiconductor wafers 有权
公开(公告)号：US20050282390A1
公开(公告)日：2005-12-22
申请号：US11199639
申请日：2005-08-09
申请人： Jinru Bian , John Quanci , Matthew VanHanehem
发明人： Jinru Bian , John Quanci , Matthew VanHanehem
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/302
CPC分类号： C09G1/02
摘要： An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride removal rate at least 100 angstroms per minute greater than its decrease in silicon nitride removal rate as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of 13.8 kPa.

4. 发明申请

US20050056810A1 Polishing composition for semiconductor wafers 审中-公开
标题翻译：半导体晶圆抛光组合物
公开(公告)号：US20050056810A1
公开(公告)日：2005-03-17
申请号：US10664722
申请日：2003-09-17
申请人： Jinru Bian , John Quanci , Matthew VanHanehem
发明人： Jinru Bian , John Quanci , Matthew VanHanehem
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , C09K13/00
CPC分类号： C09G1/02
摘要： An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride removal rate at least 100 angstroms per minute greater than its decrease in silicon nitride removal rate as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of 13.8 kPa.
摘要翻译：水性组合物可用于研磨半导体晶片。该组合物包含抑制碳化硅 - 氮化物去除率并具有亲水基团和疏水基团的非离子表面活性剂。疏水基团的碳链长度大于3。并且非离子表面活性剂抑制碳化硅 - 氮化物去除速率至少比其氮化硅去除速率降低大100埃，其用与13.8kPa的晶片垂直测量的微孔聚氨酯抛光垫压力测量。

5. 发明授权

US07842192B2 Multi-component barrier polishing solution 有权
标题翻译：多组分屏障抛光液
公开(公告)号：US07842192B2
公开(公告)日：2010-11-30
申请号：US11349863
申请日：2006-02-08
申请人： Jinru Bian , Zhendong Liu
发明人： Jinru Bian , Zhendong Liu
IPC分类号： C09K13/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quanternary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.
摘要翻译：在至少一种具有有限的电介质腐蚀的有色互连金属的存在下，抛光溶液可用于去除阻挡材料。该溶液含有0至20重量百分比的氧化剂，至少0.001重量％的用于降低有色互连金属去除速率的抑制剂，1ppm至4重量％的由铵季铵结构形成的含铵阳离子盐，1ppm至4重量％阴离子表面活性剂，阴离子表面活性剂具有4至25个碳原子，铵阳离子盐加阴离子表面活性剂的总碳原子数为6至40个碳原子，0至50重量％的研磨剂和余量的水; 并且该溶液的pH值小于7。

6. 发明申请

US20060135045A1 Polishing compositions for reducing erosion in semiconductor wafers 审中-公开
标题翻译：用于减少半导体晶片侵蚀的抛光组合物
公开(公告)号：US20060135045A1
公开(公告)日：2006-06-22
申请号：US11015528
申请日：2004-12-17
申请人： Jinru Bian , Raymond Lavoie , John Quanci , Qianqiu Ye
发明人： Jinru Bian , Raymond Lavoie , John Quanci , Qianqiu Ye
IPC分类号： B24B1/00 , C09K3/14
CPC分类号： C09G1/02 , H01L21/31053 , H01L21/3212
摘要： The aqueous polishing composition is useful for polishing semiconductor substrates. The polishing solution comprises 0.001 to 2 wt % of a polyvinylalcohol copolymer, the polyvinylalcohol copolymer having a first component, a second component and a weight average molecular weight of 1,000 to 1,000,000 grams/mole, and the first component being 50 to 95 mole percent vinyl alcohol and the second component being more hydrophobic than the vinyl alcohol and 0.05 to 50 wt % silica abrasive particles; and the composition having a pH of 8 to 12.
摘要翻译：水性抛光组合物可用于研磨半导体衬底。抛光液含有0.001〜2重量％的聚乙烯醇共聚物，该聚乙烯醇共聚物具有第一成分，第二成分，重均分子量为1,000〜1,000,000克/摩尔，第一成分为50〜95摩尔％乙烯基醇和第二组分比乙烯醇更憎水和0.05至50重量％的二氧化硅磨料颗粒; 该组合物的pH为8〜12。

7. 发明授权

US07056829B2 Polishing composition for semiconductor wafers 有权
标题翻译：半导体晶圆抛光组合物
公开(公告)号：US07056829B2
公开(公告)日：2006-06-06
申请号：US11199639
申请日：2005-08-09
申请人： Jinru Bian , John Quanci , Matthew R. VanHanehem
发明人： Jinru Bian , John Quanci , Matthew R. VanHanehem
IPC分类号： H01L21/302 , C09K13/00
CPC分类号： C09G1/02
摘要： An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride removal rate at least 100 angstroms per minute greater than its decrease in silicon nitride removal rate as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of 13.8 kPa.
摘要翻译：水性组合物可用于研磨半导体晶片。该组合物包含抑制碳化硅 - 氮化物去除率并具有亲水基团和疏水基团的非离子表面活性剂。疏水基团的碳链长度大于3。并且非离子表面活性剂抑制碳化硅 - 氮化物去除速率至少比其氮化硅去除速率降低大100埃，其用与13.8kPa的晶片垂直测量的微孔聚氨酯抛光垫压力测量。

8. 发明申请

US20070184661A1 Multi-component barrier polishing solution 有权
标题翻译：多组分屏障抛光液
公开(公告)号：US20070184661A1
公开(公告)日：2007-08-09
申请号：US11349863
申请日：2006-02-08
申请人： Jinru Bian , Zhendong Liu
发明人： Jinru Bian , Zhendong Liu
IPC分类号： C09K13/00 , H01L21/461 , B44C1/22
CPC分类号： H01L21/3212 , C09G1/02
摘要： The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quantenary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.
摘要翻译：在至少一种具有有限的电介质腐蚀的有色互连金属的存在下，抛光溶液可用于去除阻挡材料。该溶液含有0至20重量百分比的氧化剂，至少0.001重量％的用于降低有色互连金属去除速率的抑制剂，1ppm至4重量％的有机铵阳离子盐，其形成量为1ppm至4重量％阴离子表面活性剂，阴离子表面活性剂具有4至25个碳原子，铵阳离子盐加阴离子表面活性剂的总碳原子数为6至40个碳原子，0至50重量％的研磨剂和余量的水; 并且该溶液的pH值小于7。

9. 发明授权

US07790618B2 Selective slurry for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的选择性浆料
公开(公告)号：US07790618B2
公开(公告)日：2010-09-07
申请号：US11019882
申请日：2004-12-22
申请人： Jinru Bian
发明人： Jinru Bian
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , H01L21/31053 , H01L21/3212
摘要： An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms; 0 to 15 inhibitor for a nonferrous metal; 0 to 50 abrasive; 0 to 20 complexing agent for a nonferrous metal; and water.
摘要翻译：水溶液可用于在低k电介质存在下的选择性去除。该水溶液包含0至25重量％的氧化剂; 0.00002〜5的多组分表面活性剂，具有疏水性尾部的多组分表面活性剂，非离子亲水部分和阴离子亲水部分，所述疏水性尾部具有6〜30个碳原子，所述非离子亲水部分具有10〜300个碳原子; 0〜15有色金属抑制剂; 0至50磨料; 0〜20有色金属络合剂; 和水。

10. 发明申请

US20050070211A1 Barrier polishing fluid 有权
标题翻译：阻隔抛光液
公开(公告)号：US20050070211A1
公开(公告)日：2005-03-31
申请号：US10670587
申请日：2003-09-25
申请人： Jinru Bian
发明人： Jinru Bian
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/321 , B24B1/00 , B24C1/00
CPC分类号： C09G1/02 , H01L21/3212
摘要： The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.
摘要翻译：抛光液可用于研磨半导体衬底的含钽阻挡材料。抛光液包括含有至少两个含有亚胺化合物和肼化合物的氮原子的含氮化合物。含氮化合物不含吸电子取代基; 并且抛光液能够从磨料的表面除去含钽阻挡材料。

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