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1. 发明授权

US08645790B2 Data processing device and method using error detection code, method of compensating for data skew, and semiconductor device having the data processing device 有权
标题翻译：使用错误检测码的数据处理装置和方法，补偿数据偏移的方法，以及具有数据处理装置的半导体装置
公开(公告)号：US08645790B2
公开(公告)日：2014-02-04
申请号：US13239156
申请日：2011-09-21
申请人： Jin-il Lee , Dong-min Kim , Young-soo Sohn , Kwang-il Park
发明人： Jin-il Lee , Dong-min Kim , Young-soo Sohn , Kwang-il Park
IPC分类号： H03M13/00
CPC分类号： H03M13/09 , H04L1/0061
摘要： A data processing device for transmitting a first data includes a data generator configured to provide the first data, a cyclic redundancy check (CRC) generator configured to generate a CRC information having at least one bit whose binary value is modified in response to a toggle information, and a data transmitter configured to combine the CRC information and the first data as a combined data and output the combined data in serial. A data processing method for transmitting a first data includes a step of generating a first data, a step of generating cyclic redundancy check (CRC) information having at least one bit whose binary value is modified in response to a toggle information, and a step of generating a combined data by combining the generated CRC information and the first data as a combined data and outputting the combined data in serial.
摘要翻译：一种用于发送第一数据的数据处理装置包括被配置为提供第一数据的数据生成器，循环冗余校验（CRC）发生器，被配置为生成具有响应于切换信息修改其二进制值的至少一个比特的至少一个比特的CRC信息以及数据发送器，被配置为组合CRC信息和第一数据作为组合数据，并串行输出组合数据。用于发送第一数据的数据处理方法包括产生第一数据的步骤，产生具有响应于切换信息修改其二进制值的至少一个比特的循环冗余校验（CRC）信息的步骤，以及步骤通过组合生成的CRC信息和第一数据作为组合数据来生成组合数据，并串行输出组合数据。

2. 发明申请

US20120117443A1 DATA PROCESSING DEVICE AND METHOD USING ERROR DETECTION CODE, METHOD OF COMPENSATING FOR DATA SKEW, AND SEMICONDUCTOR DEVICE HAVING THE DATA PROCESSING DEVICE 有权
标题翻译：数据处理装置和使用错误检测码的方法，数据处理装置的补偿方法和具有数据处理装置的半导体装置
公开(公告)号：US20120117443A1
公开(公告)日：2012-05-10
申请号：US13239156
申请日：2011-09-21
申请人： Jin-il Lee , Dong-min Kim , Young-soo Sohn , Kwang-il Park
发明人： Jin-il Lee , Dong-min Kim , Young-soo Sohn , Kwang-il Park
IPC分类号： G06F11/08
CPC分类号： H03M13/09 , H04L1/0061
摘要： A data processing device for transmitting a first data includes a data generator configured to provide the first data, a cyclic redundancy check (CRC) generator configured to generate a CRC information having at least one bit whose binary value is modified in response to a toggle information, and a data transmitter configured to combine the CRC information and the first data as a combined data and output the combined data in serial.A data processing method for transmitting a first data includes a step of generating a first data, a step of generating cyclic redundancy check (CRC) information having at least one bit whose binary value is modified in response to a toggle information, and a step of generating a combined data by combining the generated CRC information and the first data as a combined data and outputting the combined data in serial.
摘要翻译：一种用于发送第一数据的数据处理装置包括被配置为提供第一数据的数据生成器，循环冗余校验（CRC）发生器，被配置为生成具有响应于切换信息修改其二进制值的至少一个比特的至少一个比特的CRC信息以及数据发送器，被配置为组合CRC信息和第一数据作为组合数据，并串行输出组合数据。用于发送第一数据的数据处理方法包括产生第一数据的步骤，产生具有响应于切换信息修改其二进制值的至少一个比特的循环冗余校验（CRC）信息的步骤，以及步骤通过组合生成的CRC信息和第一数据作为组合数据来生成组合数据，并串行输出组合数据。

3. 发明授权

US08703237B2 Methods of forming a material layer and methods of fabricating a memory device 有权
标题翻译：形成材料层的方法和制造存储器件的方法
公开(公告)号：US08703237B2
公开(公告)日：2014-04-22
申请号：US12465975
申请日：2009-05-14
申请人： Hye-young Park , Sung-lae Cho , Jin-il Lee , Do-hyung Kim , Dong-hyun Im
发明人： Hye-young Park , Sung-lae Cho , Jin-il Lee , Do-hyung Kim , Dong-hyun Im
IPC分类号： C23C16/00 , B05D5/12
CPC分类号： C23C16/305 , C23C16/16 , C23C16/18 , C23C16/45531
摘要： Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.
摘要翻译：提供了通过化学吸附金属原子到其表面上形成有阴离子的基板来形成材料层的方法，以及通过使用材料层形成方法制造存储器件的方法。因此，具有小直径的通孔可以填充材料层而不形成空隙或接缝。因此，可以获得可靠的存储器件。

4. 发明授权

US07049232B2 Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same 有权
公开(公告)号：US07049232B2
公开(公告)日：2006-05-23
申请号：US10657596
申请日：2003-09-08
申请人： Kwang-hee Lee , Cha-young Yoo , Han-jin Lim , Sung-tae Kim , Suk-jin Chung , Wan-don Kim , Jung-hee Chung , Jin-il Lee
发明人： Kwang-hee Lee , Cha-young Yoo , Han-jin Lim , Sung-tae Kim , Suk-jin Chung , Wan-don Kim , Jung-hee Chung , Jin-il Lee
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , H01L21/28556 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/65
摘要： Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2–1 ccm and oxygen at a flow rate of 20–60 sccm, and depositing the ruthenium film at a temperature of 330–430° C. under a pressure of 0.5–5 Torr using chemical vapor deposition (CVD).

5. 发明授权

US08142846B2 Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device 有权
标题翻译：使用Ge（II）源形成相变材料层的方法和相变存储器件的制造方法
公开(公告)号：US08142846B2
公开(公告)日：2012-03-27
申请号：US12248964
申请日：2008-10-10
申请人： Byoung-jae Bae , Sung-lae Cho , Jin-il Lee , Hye-young Park , Do-hyung Kim
发明人： Byoung-jae Bae , Sung-lae Cho , Jin-il Lee , Hye-young Park , Do-hyung Kim
IPC分类号： C23C16/30 , H01L21/71
CPC分类号： H01L45/06 , C23C16/305 , C23C16/45534 , G11C13/0004 , H01L27/2436 , H01L45/1233 , H01L45/124 , H01L45/144 , H01L45/148 , H01L45/1616 , H01L45/1683 , H01L45/1691
摘要： In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
摘要翻译：一方面，提供了形成相变材料层的方法。该方法包括将包含式1的组合物的反应气体供应到反应室中，将包含Ge（II）的第一源供应到反应室中，并将第二源供应到反应室中。式1是NR1R2R3，其中R1，R2和R3各自独立地选自H，CH3，C2H5，C3H7，C4H9，Si（CH3）3，NH2，NH（CH3），N（CH3） 2，NH（C 2 H 5）和N（C 2 H 5）2。

6. 发明申请

US20080108174A1 METAL PRECURSORS FOR LOW TEMPERATURE DEPOSITION AND METHODS OF FORMING A METAL THIN LAYER AND MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE METAL PRECURSORS 有权
标题翻译：用于低温沉积的金属前驱体和形成金属薄层的方法和使用金属前驱体制造相变存储器件
公开(公告)号：US20080108174A1
公开(公告)日：2008-05-08
申请号：US11772494
申请日：2007-07-02
申请人： Hye-young Park , Sung-Iae Cho , Byoung-jae Bae , Jin-il Lee , Ji-eun Lim , Young-lim Park
发明人： Hye-young Park , Sung-Iae Cho , Byoung-jae Bae , Jin-il Lee , Ji-eun Lim , Young-lim Park
IPC分类号： H01L21/06 , B32B15/04 , C07C395/00 , C07F7/30 , H01L21/44 , C07F9/90 , C23C16/00
CPC分类号： H01L45/1233 , C07F7/30 , C23C16/18 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/144 , H01L45/1616 , H01L45/1683 , Y10T428/31678
摘要： The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.
摘要翻译：本发明提供用于低温沉积的金属前体。金属前体包括金属环化合物，其包含至少一种金属作为形成环的多个元素之一。还提供了形成金属薄层的方法和制造包括使用金属前体的相变存储器件。

7. 发明授权

US07034350B2 Capacitors including a cavity containing a buried layer 有权
标题翻译：电容器包括一个包含掩埋层的空腔
公开(公告)号：US07034350B2
公开(公告)日：2006-04-25
申请号：US10795020
申请日：2004-03-05
申请人： Suk-jin Chung , Wan-don Kim , Cha-young Yoo , Kwang-hee Lee , Han-jin Lim , Jin-il Lee
发明人： Suk-jin Chung , Wan-don Kim , Cha-young Yoo , Kwang-hee Lee , Han-jin Lim , Jin-il Lee
IPC分类号： H01L27/108
CPC分类号： H01L28/65 , H01L27/10852 , H01L28/91
摘要： Capacitors include an integrated circuit (semiconductor) substrate and an interlayer dielectric disposed on the integrated circuit substrate and including a metal plug therein. A lower electrode is disposed on the interlayer dielectric and contacting the metal plug. The lower electrode includes a cavity therein and a buried layer in the cavity. The buried layer is an oxygen absorbing material. A dielectric layer disposed on the lower electrode and an upper electrode is disposed on the dielectric layer. The lower electrode may be a noble metal layer. The buried layer may fill in the cavity and may not contain oxygen (O2) when initially formed.
摘要翻译：电容器包括集成电路（半导体）基板和布置在集成电路基板上并且在其中包括金属插塞的层间电介质。下部电极设置在层间电介质上并接触金属插塞。下电极在其中包括空腔，并且在腔中包括掩埋层。掩埋层是吸氧材料。设置在下电极上的电介质层和上电极设置在电介质层上。下电极可以是贵金属层。当初始形成时，掩埋层可以填充空腔并且可以不含有氧（O 2 2 N）。

8. 发明授权

US07867880B2 Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors 有权
标题翻译：用于低温沉积的金属前体和形成金属薄层的方法，以及使用金属前体制造相变存储器件
公开(公告)号：US07867880B2
公开(公告)日：2011-01-11
申请号：US11772494
申请日：2007-07-02
申请人： Hye-young Park , Sung-lae Cho , Byoung-jae Bae , Jin-il Lee , Ji-eun Lim , Young-lim Park
发明人： Hye-young Park , Sung-lae Cho , Byoung-jae Bae , Jin-il Lee , Ji-eun Lim , Young-lim Park
IPC分类号： H01L21/205
CPC分类号： H01L45/1233 , C07F7/30 , C23C16/18 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/144 , H01L45/1616 , H01L45/1683 , Y10T428/31678
摘要： The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.
摘要翻译：本发明提供用于低温沉积的金属前体。金属前体包括金属环化合物，其包含至少一种金属作为形成环的多个元素之一。还提供了形成金属薄层的方法和制造包括使用金属前体的相变存储器件。

9. 发明申请

US20090285986A1 METHODS OF FORMING A MATERIAL LAYER AND METHODS OF FABRICATING A MEMORY DEVICE 有权
标题翻译：形成材料层的方法和制造存储器件的方法
公开(公告)号：US20090285986A1
公开(公告)日：2009-11-19
申请号：US12465975
申请日：2009-05-14
申请人： Hye-young Park , Sung-Iae Cho , Jin-il Lee , Do-hyung Kim , Dong-hyun Im
发明人： Hye-young Park , Sung-Iae Cho , Jin-il Lee , Do-hyung Kim , Dong-hyun Im
IPC分类号： C23C16/22
CPC分类号： C23C16/305 , C23C16/16 , C23C16/18 , C23C16/45531
摘要： Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.
摘要翻译：提供了通过化学吸附金属原子到其表面上形成有阴离子的基板来形成材料层的方法，以及通过使用材料层形成方法制造存储器件的方法。因此，具有小直径的通孔可以填充材料层而不形成空隙或接缝。因此，可以获得可靠的存储器件。

10. 发明申请

US20090097305A1 METHOD OF FORMING PHASE CHANGE MATERIAL LAYER USING GE(II) SOURCE, AND METHOD OF FABRICATING PHASE CHANGE MEMORY DEVICE 有权
标题翻译：使用GE（II）源形成相变材料层的方法和制备相变存储器件的方法
公开(公告)号：US20090097305A1
公开(公告)日：2009-04-16
申请号：US12248964
申请日：2008-10-10
申请人： Byoung-jae Bae , Sung-lae Cho , Jin-il Lee , Hye-young Park , Do-hyung Kim
发明人： Byoung-jae Bae , Sung-lae Cho , Jin-il Lee , Hye-young Park , Do-hyung Kim
IPC分类号： G11C11/00 , H01L51/40
CPC分类号： H01L45/06 , C23C16/305 , C23C16/45534 , G11C13/0004 , H01L27/2436 , H01L45/1233 , H01L45/124 , H01L45/144 , H01L45/148 , H01L45/1616 , H01L45/1683 , H01L45/1691
摘要： In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
摘要翻译：一方面，提供了形成相变材料层的方法。该方法包括将包含式1的组合物的反应气体供应到反应室中，将包含Ge（II）的第一源供应到反应室中，并将第二源供应到反应室中。式1是NR1R2R3，其中R1，R2和R3各自独立地选自H，CH3，C2H5，C3H7，C4H9，Si（CH3）3，NH2，NH（CH3），N（CH3） 2，NH（C 2 H 5）和N（C 2 H 5）2。

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