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1. 发明申请

US20070148933A1 Nonvolatile memory device and method of fabricating the same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20070148933A1
公开(公告)日：2007-06-28
申请号：US11512658
申请日：2006-08-30
申请人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Ran-Ju Jung , Sang-Yeol Kang , Young-Lim Park
发明人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Ran-Ju Jung , Sang-Yeol Kang , Young-Lim Park
IPC分类号： H01L21/20
CPC分类号： H01L21/32051 , H01L21/28562 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A method of fabricating a phase-change random-access memory (RAM) device includes forming a chalcogenide material on a substrate. A bottom contact is formed under the chalcogenide material, the bottom contact comprising TiAlN. Forming the bottom contact includes performing an atomic layer deposition (ALD) process, the ALD process including introducing an NH3 source gas into a chamber in which the ALD process is being carried out, a flow amount of the NH3 gas being such that the resulting bottom contact has a chlorine content of less than 1 at %. The bottom contact can include TiAlN having a crystallinity in terms of full-width half-maximum (FWHM) of less than about 0.65 degree.
摘要翻译：制造相变随机存取存储器（RAM）器件的方法包括在衬底上形成硫族化物材料。在硫族化物材料下形成底部接触，底部接触包含TiAlN。形成底部接触包括执行原子层沉积（ALD）工艺，ALD工艺包括将NH 3源气体引入到其中进行ALD工艺的室中，流动量为 NH 3气体使得所得底部接触物的氯含量小于1原子％。底部接触可以包括具有小于约0.65度的全宽度半最大值（FWHM）的结晶度的TiAlN。

2. 发明授权

US07569417B2 Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device 有权
标题翻译：形成相变材料层的方法，相变存储单元的制造方法以及相变半导体存储器件的制造方法
公开(公告)号：US07569417B2
公开(公告)日：2009-08-04
申请号：US11353129
申请日：2006-02-14
申请人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Young-Lim Park
发明人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Young-Lim Park
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/144 , H01L45/1616 , H01L45/1675 , H01L45/1683
摘要： A phase changeable material layer usable in a semiconductor memory device and a method of forming the same are disclosed. The method includes forming a plasma in a chamber having a substrate disposed therein, providing a first source gas including a germanium based material to form a first layer including the germanium based material on the substrate while maintaining the plasma in the chamber, providing a second source gas including a tellurium based material to react with the first layer to form a first composite material layer including a germanium-tellurium composite material on the substrate while maintaining the plasma in the chamber, providing a third source gas including an antimony based material to form a second layer including the antimony based material on the first composite material layer while maintaining the plasma in the chamber, and providing a fourth source gas including tellurium based material to react with the second layer including antimony based material to form a second composite material layer including an antimony-tellurium composite material on the first composite material layer. Accordingly, the phase changeable material layer may be formed at a low temperature and power to have desirable electrical characteristics.
摘要翻译：公开了可用于半导体存储器件的相变材料层及其形成方法。该方法包括在具有设置在其中的基板的腔室中形成等离子体，提供包括锗基材料的第一源气体，以在将等离子体保持在腔室中的同时在基板上形成包括基于锗的材料的第一层，从而提供第二源气体，其包括与第一层反应的碲基材料，以在衬底上形成包含锗 - 碲复合材料的第一复合材料层，同时将等离子体保持在室中，提供包括锑基材料的第三源气体，以形成第二层，包括在第一复合材料层上的锑基材料，同时将等离子体保持在室中，并且提供包括碲基材料的第四源气体，以与包含锑基材料的第二层反应以形成第二复合材料层，锑 - 碲复合材料在第一层复合材料上的铺设 r。因此，可以在低温和功率下形成相变材料层以具有期望的电特性。

3. 发明授权

US08034683B2 Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed 有权
标题翻译：形成相变材料层的方法，使用其形成相变存储器件的方法，以及如此形成的相变存储器件
公开(公告)号：US08034683B2
公开(公告)日：2011-10-11
申请号：US11785807
申请日：2007-04-20
申请人： Sung-Lae Cho , Choong-Man Lee , Jin-Il Lee , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
发明人： Sung-Lae Cho , Choong-Man Lee , Jin-Il Lee , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
IPC分类号： H01L21/44
CPC分类号： H01L45/1233 , C23C16/305 , C23C16/45523 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.
摘要翻译：形成相变材料层的方法包括制备具有绝缘体和导体的衬底，将衬底装载到工艺外壳中，将沉积气体注入工艺外壳中，以选择性地在所述工艺外壳的暴露表面上形成相变材料层导体，以及从工艺外壳卸载衬底，其中工艺外壳中的沉积气体的寿命短于沉积气体通过热能反应的时间。

4. 发明申请

US20070246743A1 Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed 有权
标题翻译：形成相变材料层的方法，使用其形成相变存储器件的方法，以及如此形成的相变存储器件
公开(公告)号：US20070246743A1
公开(公告)日：2007-10-25
申请号：US11785807
申请日：2007-04-20
申请人： Sung-Lae Cho , Choong-Man Lee , Jin- Il Lee , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
发明人： Sung-Lae Cho , Choong-Man Lee , Jin- Il Lee , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
IPC分类号： H01L27/10
CPC分类号： H01L45/1233 , C23C16/305 , C23C16/45523 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.
摘要翻译：形成相变材料层的方法包括制备具有绝缘体和导体的衬底，将衬底装载到工艺外壳中，将沉积气体注入工艺外壳中，以选择性地在所述工艺外壳的暴露表面上形成相变材料层导体，以及从工艺外壳卸载衬底，其中工艺外壳中的沉积气体的寿命短于沉积气体通过热能反应的时间。

5. 发明授权

US07855145B2 Gap filling method and method for forming semiconductor memory device using the same 失效
标题翻译：用于形成半导体存储器件的间隙填充方法和方法
公开(公告)号：US07855145B2
公开(公告)日：2010-12-21
申请号：US11783975
申请日：2007-04-13
申请人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
发明人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
IPC分类号： H01L21/44
CPC分类号： C23C16/045 , C23C16/45523 , C23C16/5096 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.
摘要翻译：一种间隙填充方法和一种形成存储器件的方法，包括在衬底上形成绝缘层，在绝缘层中形成间隙区域，并重复形成相变材料层，并蚀刻相变材料层以形成相在间隙区域中改变材料层图案。

6. 发明申请

US20070246439A1 Gap filling method, method for forming semiconductor memory device using the same, and semiconductor device having a filled gap 失效
标题翻译：间隙填充方法，使用其的半导体存储器件的形成方法以及具有填充间隙的半导体器件
公开(公告)号：US20070246439A1
公开(公告)日：2007-10-25
申请号：US11783975
申请日：2007-04-13
申请人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
发明人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Sang-Wook Lim , Hye-Young Park , Young-Lim Park
IPC分类号： B44C1/22 , C03C25/68 , C23F1/00
CPC分类号： C23C16/045 , C23C16/45523 , C23C16/5096 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.
摘要翻译：一种间隙填充方法和一种形成存储器件的方法，包括在衬底上形成绝缘层，在绝缘层中形成间隙区域，并重复形成相变材料层，并蚀刻相变材料层以形成相在间隙区域中改变材料层图案。

7. 发明申请

US20070054475A1 Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device 有权
标题翻译：形成相变材料层的方法，相变存储单元的制造方法以及相变半导体存储器件的制造方法
公开(公告)号：US20070054475A1
公开(公告)日：2007-03-08
申请号：US11353129
申请日：2006-02-14
申请人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Young-Lim Park
发明人： Jin-Il Lee , Choong-Man Lee , Sung-Lae Cho , Young-Lim Park
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： H01L45/1233 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/144 , H01L45/1616 , H01L45/1675 , H01L45/1683
摘要： A phase changeable material layer usable in a semiconductor memory device and a method of forming the same are disclosed. The method includes forming a plasma in a chamber having a substrate disposed therein, providing a first source gas including a germanium based material to form a first layer including the germanium based material on the substrate while maintaining the plasma in the chamber, providing a second source gas including a tellurium based material to react with the first layer to form a first composite material layer including a germanium-tellurium composite material on the substrate while maintaining the plasma in the chamber, providing a third source gas including an antimony based material to form a second layer including the antimony based material on the first composite material layer while maintaining the plasma in the chamber, and providing a fourth source gas including tellurium based material to react with the second layer including antimony based material to form a second composite material layer including an antimony-tellurium composite material on the first composite material layer. Accordingly, the phase changeable material layer may be formed at a low temperature and power to have desirable electrical characteristics.
摘要翻译：公开了可用于半导体存储器件的相变材料层及其形成方法。该方法包括在具有设置在其中的基板的腔室中形成等离子体，提供包括锗基材料的第一源气体，以在将等离子体保持在腔室中的同时在基板上形成包括基于锗的材料的第一层，从而提供第二源气体，其包括与第一层反应的碲基材料，以在衬底上形成包含锗 - 碲复合材料的第一复合材料层，同时将等离子体保持在室中，提供包括锑基材料的第三源气体，以形成第二层，包括在第一复合材料层上的锑基材料，同时将等离子体保持在室中，并且提供包括碲基材料的第四源气体，以与包含锑基材料的第二层反应以形成第二复合材料层，锑 - 碲复合材料在第一层复合材料上的铺设 r。因此，可以在低温和功率下形成相变材料层以具有期望的电特性。

8. 发明授权

US07482616B2 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same 有权
标题翻译：具有相变存储单元的半导体器件，使用该半导体器件的电子系统及其制造方法
公开(公告)号：US07482616B2
公开(公告)日：2009-01-27
申请号：US11139283
申请日：2005-05-27
申请人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
发明人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
IPC分类号： H01L29/02
CPC分类号： H01L29/7843 , H01L27/2436 , H01L29/665 , H01L29/7833 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666 , H01L45/1675
摘要： In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
摘要翻译：在一个实施例中，相变存储器件具有防止存储器单元污染或氧化的氧化阻挡层及其制造方法。在一个实施例中，半导体存储器件包括覆盖半导体衬底的成型层。模制层具有从其顶表面垂直延伸的突出部分。该装置还包括与突出部分相邻的相变材料图案和与相变材料图案电连接的下部电极。

9. 发明授权

US08026543B2 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same 有权
标题翻译：具有相变存储单元的半导体器件，使用该半导体器件的电子系统及其制造方法
公开(公告)号：US08026543B2
公开(公告)日：2011-09-27
申请号：US12338814
申请日：2008-12-18
申请人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
发明人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
IPC分类号： H01L27/108 , H01L47/00
CPC分类号： H01L29/7843 , H01L27/2436 , H01L29/665 , H01L29/7833 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666 , H01L45/1675
摘要： A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation. In one embodiment, a semiconductor memory device includes a molding layer disposed over semiconductor substrate, a phase-changeable material pattern, and an oxidation barrier of electrically insulative material. The molding layer has a protrusion at its upper portion. One portion of the phase-changeable material pattern overlies the protrusion of the molding layer, and another portion of the phase-changeable material pattern extends through the protrusion. The electrically insulative material of the oxidation barrier may cover the phase-changeable material pattern and/or extend along and cover the entire area at which the protrusion of the molding layer and the portion of the phase-change material pattern disposed on the protrusion adjoin.
摘要翻译：相变存储器件具有氧化阻挡层以防止存储器细胞污染或氧化。在一个实施例中，半导体存储器件包括设置在半导体衬底上的成型层，相变材料图案和电绝缘材料的氧化屏障。成型层在其上部具有突出部。可相变材料图案的一部分覆盖模制层的突起，并且相变材料图案的另一部分延伸穿过突出部。氧化屏障的电绝缘材料可以覆盖相变材料图案和/或延伸并且覆盖模制层的突起和设置在突起上的相变材料图案的部分邻接的整个区域。

10. 发明申请

US20090101881A1 SEMICONDUCTOR DEVICES HAVING PHASE CHANGE MEMORY CELLS, ELECTRONIC SYSTEMS EMPLOYING THE SAME AND METHODS OF FABRICATING THE SAME 有权
标题翻译：具有相变记忆体的半导体器件，使用其的电子系统及其制造方法
公开(公告)号：US20090101881A1
公开(公告)日：2009-04-23
申请号：US12338814
申请日：2008-12-18
申请人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
发明人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
IPC分类号： H01L45/00
CPC分类号： H01L29/7843 , H01L27/2436 , H01L29/665 , H01L29/7833 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666 , H01L45/1675
摘要： In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
摘要翻译：在一个实施例中，相变存储器件具有防止存储器单元污染或氧化的氧化阻挡层及其制造方法。在一个实施例中，半导体存储器件包括覆盖半导体衬底的成型层。模制层具有从其顶表面垂直延伸的突出部分。该装置还包括与突出部分相邻的相变材料图案和与相变材料图案电连接的下部电极。

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