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1. 发明授权

US08026543B2 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same 有权
标题翻译：具有相变存储单元的半导体器件，使用该半导体器件的电子系统及其制造方法
公开(公告)号：US08026543B2
公开(公告)日：2011-09-27
申请号：US12338814
申请日：2008-12-18
申请人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
发明人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
IPC分类号： H01L27/108 , H01L47/00
CPC分类号： H01L29/7843 , H01L27/2436 , H01L29/665 , H01L29/7833 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666 , H01L45/1675
摘要： A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation. In one embodiment, a semiconductor memory device includes a molding layer disposed over semiconductor substrate, a phase-changeable material pattern, and an oxidation barrier of electrically insulative material. The molding layer has a protrusion at its upper portion. One portion of the phase-changeable material pattern overlies the protrusion of the molding layer, and another portion of the phase-changeable material pattern extends through the protrusion. The electrically insulative material of the oxidation barrier may cover the phase-changeable material pattern and/or extend along and cover the entire area at which the protrusion of the molding layer and the portion of the phase-change material pattern disposed on the protrusion adjoin.
摘要翻译：相变存储器件具有氧化阻挡层以防止存储器细胞污染或氧化。在一个实施例中，半导体存储器件包括设置在半导体衬底上的成型层，相变材料图案和电绝缘材料的氧化屏障。成型层在其上部具有突出部。可相变材料图案的一部分覆盖模制层的突起，并且相变材料图案的另一部分延伸穿过突出部。氧化屏障的电绝缘材料可以覆盖相变材料图案和/或延伸并且覆盖模制层的突起和设置在突起上的相变材料图案的部分邻接的整个区域。

2. 发明申请

US20090101881A1 SEMICONDUCTOR DEVICES HAVING PHASE CHANGE MEMORY CELLS, ELECTRONIC SYSTEMS EMPLOYING THE SAME AND METHODS OF FABRICATING THE SAME 有权
标题翻译：具有相变记忆体的半导体器件，使用其的电子系统及其制造方法
公开(公告)号：US20090101881A1
公开(公告)日：2009-04-23
申请号：US12338814
申请日：2008-12-18
申请人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
发明人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
IPC分类号： H01L45/00
CPC分类号： H01L29/7843 , H01L27/2436 , H01L29/665 , H01L29/7833 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666 , H01L45/1675
摘要： In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
摘要翻译：在一个实施例中，相变存储器件具有防止存储器单元污染或氧化的氧化阻挡层及其制造方法。在一个实施例中，半导体存储器件包括覆盖半导体衬底的成型层。模制层具有从其顶表面垂直延伸的突出部分。该装置还包括与突出部分相邻的相变材料图案和与相变材料图案电连接的下部电极。

3. 发明申请

US20050263829A1 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same 有权
标题翻译：具有相变存储单元的半导体器件，使用该半导体器件的电子系统及其制造方法
公开(公告)号：US20050263829A1
公开(公告)日：2005-12-01
申请号：US11139283
申请日：2005-05-27
申请人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
发明人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
IPC分类号： H01L21/00 , H01L21/336 , H01L27/24 , H01L29/00 , H01L29/78
CPC分类号： H01L29/7843 , H01L27/2436 , H01L29/665 , H01L29/7833 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666 , H01L45/1675
摘要： In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
摘要翻译：在一个实施例中，相变存储器件具有防止存储器单元污染或氧化的氧化阻挡层及其制造方法。在一个实施例中，半导体存储器件包括覆盖半导体衬底的成型层。模制层具有从其顶表面垂直延伸的突出部分。该装置还包括与突出部分相邻的相变材料图案和与相变材料图案电连接的下部电极。

4. 发明授权

US07482616B2 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same 有权
标题翻译：具有相变存储单元的半导体器件，使用该半导体器件的电子系统及其制造方法
公开(公告)号：US07482616B2
公开(公告)日：2009-01-27
申请号：US11139283
申请日：2005-05-27
申请人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
发明人： Yoon-Jong Song , Young-Nam Hwang , Sang-Don Nam , Sung-Lae Cho , Gwan-Hyeob Koh , Choong-Man Lee , Bong-Jin Kuh , Yong-Ho Ha , Su-Youn Lee , Chang-Wook Jeong , Ji-Hye Yi , Kyung-Chang Ryoo , Se-Ho Lee , Su-Jin Ahn , Soon-Oh Park , Jang-Eun Lee
IPC分类号： H01L29/02
CPC分类号： H01L29/7843 , H01L27/2436 , H01L29/665 , H01L29/7833 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666 , H01L45/1675
摘要： In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
摘要翻译：在一个实施例中，相变存储器件具有防止存储器单元污染或氧化的氧化阻挡层及其制造方法。在一个实施例中，半导体存储器件包括覆盖半导体衬底的成型层。模制层具有从其顶表面垂直延伸的突出部分。该装置还包括与突出部分相邻的相变材料图案和与相变材料图案电连接的下部电极。

5. 发明申请

US20050263823A1 Phase-change memory device having a barrier layer and manufacturing method 有权
标题翻译：具有阻挡层的相变存储器件和制造方法
公开(公告)号：US20050263823A1
公开(公告)日：2005-12-01
申请号：US11027255
申请日：2004-12-30
申请人： Young-Nam Hwang , Gwan-Hyeob Koh , Su-Jin Ahn , Sung-Lae Cho , Se-Ho Lee , Kyung-Chang Ryoo , Chang-Wook Jeong , Su-Youn Lee , Bong-Jin Kuh
发明人： Young-Nam Hwang , Gwan-Hyeob Koh , Su-Jin Ahn , Sung-Lae Cho , Se-Ho Lee , Kyung-Chang Ryoo , Chang-Wook Jeong , Su-Youn Lee , Bong-Jin Kuh
IPC分类号： H01L27/108 , H01L27/24 , H01L45/00
CPC分类号： H01L29/7843 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666
摘要： A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
摘要翻译：相变存储器件具有防止存储器单元污染或氧化的氧化阻挡层及其制造方法。在一个实施例中，半导体存储器件包括覆盖半导体衬底的成型层。模制层具有从其顶表面垂直延伸的突出部分。该装置还包括与突出部分相邻的相变材料图案和与相变材料图案电连接的下部电极。

6. 发明授权

US07411208B2 Phase-change memory device having a barrier layer and manufacturing method 有权
标题翻译：具有阻挡层的相变存储器件和制造方法
公开(公告)号：US07411208B2
公开(公告)日：2008-08-12
申请号：US11027255
申请日：2004-12-30
申请人： Young-Nam Hwang , Gwan-Hyeob Koh , Su-Jin Ahn , Sung-Lae Cho , Se-Ho Lee , Kyung-Chang Ryoo , Chang-Wook Jeong , Su-Youn Lee , Bong-Jin Kuh
发明人： Young-Nam Hwang , Gwan-Hyeob Koh , Su-Jin Ahn , Sung-Lae Cho , Se-Ho Lee , Kyung-Chang Ryoo , Chang-Wook Jeong , Su-Youn Lee , Bong-Jin Kuh
IPC分类号： H01L45/00
CPC分类号： H01L29/7843 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1666
摘要： A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
摘要翻译：相变存储器件具有防止存储器单元污染或氧化的氧化阻挡层及其制造方法。在一个实施例中，半导体存储器件包括覆盖半导体衬底的成型层。模制层具有从其顶表面垂直延伸的突出部分。该装置还包括与突出部分相邻的相变材料图案和与相变材料图案电连接的下部电极。

7. 发明申请

US20050285094A1 Phase-Changeable Memory Devices 有权
标题翻译：相变存储器件
公开(公告)号：US20050285094A1
公开(公告)日：2005-12-29
申请号：US11145154
申请日：2005-06-03
申请人： Su-Youn Lee , Su-Jin Ahn , Chang-Wook Jeong
发明人： Su-Youn Lee , Su-Jin Ahn , Chang-Wook Jeong
IPC分类号： H01L21/336 , H01L27/108 , H01L27/24 , H01L29/02 , H01L29/76 , H01L29/94 , H01L31/119 , H01L47/00
CPC分类号： H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： Phase-changeable memory devices include non-volatile memory cells. Each of these non-volatile memory cells may include a phase-changeable diode on a semiconductor substrate and a phase-changeable memory element having a first terminal electrically coupled to a terminal of the phase-changeable diode. This phase-changeable diode may include a lower electrode pattern on the semiconductor substrate, a first phase-changeable pattern on the lower electrode pattern and a gate switching layer pattern on the first phase-changeable pattern. The phase-changeable memory element includes a second phase-changeable pattern electrically coupled to the terminal of the phase-changeable diode and a memory switching layer pattern on the second phase-changeable pattern. The memory switching layer pattern may include a composite of a titanium layer pattern contacting the phase-changeable memory element and a titanium nitride layer pattern contacting the titanium layer pattern.
摘要翻译：可变相存储器件包括非易失性存储器单元。这些非易失性存储器单元中的每一个可以包括半导体衬底上的相位可变二极管和具有电耦合到相位可变二极管的端子的第一端子的可相位改变的存储元件。该相变二极管可以包括半导体衬底上的下电极图案，下电极图案上的第一相变图案和第一相位可变图案上的栅极切换层图案。相位可变存储元件包括电耦合到相变二极管的端子的第二相位变化图案和第二相位可变图案上的存储器切换层图案。存储器切换层图案可以包括与相变存储元件接触的钛层图案与接触钛层图案的氮化钛层图案的复合物。

8. 发明申请

US20060270180A1 Methods of Forming Phase-Changeable Memory Devices 有权
标题翻译：形成相变存储器件的方法
公开(公告)号：US20060270180A1
公开(公告)日：2006-11-30
申请号：US11462443
申请日：2006-08-04
申请人： Su-Youn Lee , Su-Jin Ahn , Chang-Wook Jeong
发明人： Su-Youn Lee , Su-Jin Ahn , Chang-Wook Jeong
IPC分类号： H01L21/76
CPC分类号： H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： Phase-changeable memory devices include non-volatile memory cells. Each of these non-volatile memory cells may include a phase-changeable diode on a semiconductor substrate and a phase-changeable memory element having a first terminal electrically coupled to a terminal of the phase-changeable diode. This phase-changeable diode may include a lower electrode pattern on the semiconductor substrate, a first phase-changeable pattern on the lower electrode pattern and a gate switching layer pattern on the first phase-changeable pattern. The phase-changeable memory element includes a second phase-changeable pattern electrically coupled to the terminal of the phase-changeable diode and a memory switching layer pattern on the second phase-changeable pattern. The memory switching layer pattern may include a composite of a titanium layer pattern contacting the phase-changeable memory element and a titanium nitride layer pattern contacting the titanium layer pattern.
摘要翻译：可变相存储器件包括非易失性存储器单元。这些非易失性存储器单元中的每一个可以包括半导体衬底上的相位可变二极管和具有电耦合到相位可变二极管的端子的第一端子的可相位改变的存储元件。该相变二极管可以包括半导体衬底上的下电极图案，下电极图案上的第一相变图案和第一相位可变图案上的栅极切换层图案。相位可变存储元件包括电耦合到相变二极管的端子的第二相位变化图案和第二相位可变图案上的存储器切换层图案。存储器切换层图案可以包括与相变存储元件接触的钛层图案与接触钛层图案的氮化钛层图案的复合物。

9. 发明授权

US07521281B2 Methods of forming phase-changeable memory devices 有权
标题翻译：形成相变存储器件的方法
公开(公告)号：US07521281B2
公开(公告)日：2009-04-21
申请号：US11462443
申请日：2006-08-04
申请人： Su-Youn Lee , Su-Jin Ahn , Chang-Wook Jeong
发明人： Su-Youn Lee , Su-Jin Ahn , Chang-Wook Jeong
IPC分类号： H01L21/00
CPC分类号： H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： Phase-changeable memory devices include non-volatile memory cells. Each of these non-volatile memory cells may include a phase-changeable diode on a semiconductor substrate and a phase-changeable memory element having a first terminal electrically coupled to a terminal of the phase-changeable diode. This phase-changeable diode may include a lower electrode pattern on the semiconductor substrate, a first phase-changeable pattern on the lower electrode pattern and a gate switching layer pattern on the first phase-changeable pattern. The phase-changeable memory element includes a second phase-changeable pattern electrically coupled to the terminal of the phase-changeable diode and a memory switching layer pattern on the second phase-changeable pattern. The memory switching layer pattern may include a composite of a titanium layer pattern contacting the phase-changeable memory element and a titanium nitride layer pattern contacting the titanium layer pattern.
摘要翻译：可变相存储器件包括非易失性存储器单元。这些非易失性存储器单元中的每一个可以包括半导体衬底上的相位可变二极管和具有电耦合到相位可变二极管的端子的第一端子的可相位改变的存储元件。该相变二极管可以包括半导体衬底上的下电极图案，下电极图案上的第一相变图案和第一相位可变图案上的栅极切换层图案。相位可变存储元件包括电耦合到相变二极管的端子的第二相位变化图案和第二相位可变图案上的存储器切换层图案。存储器切换层图案可以包括与相变存储元件接触的钛层图案与接触钛层图案的氮化钛层图案的复合物。

10. 发明授权

US07105870B2 Phase-changeable memory devices 有权
标题翻译：相变存储器件
公开(公告)号：US07105870B2
公开(公告)日：2006-09-12
申请号：US11145154
申请日：2005-06-03
申请人： Su-Youn Lee , Su-Jin Ahn , Chang-Wook Jeong
发明人： Su-Youn Lee , Su-Jin Ahn , Chang-Wook Jeong
IPC分类号： H01L31/0328
CPC分类号： H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： Phase-changeable memory devices include non-volatile memory cells. Each of these non-volatile memory cells may include a phase-changeable diode on a semiconductor substrate and a phase-changeable memory element having a first terminal electrically coupled to a terminal of the phase-changeable diode. This phase-changeable diode may include a lower electrode pattern on the semiconductor substrate, a first phase-changeable pattern on the lower electrode pattern and a gate switching layer pattern on the first phase-changeable pattern. The phase-changeable memory element includes a second phase-changeable pattern electrically coupled to the terminal of the phase-changeable diode and a memory switching layer pattern on the second phase-changeable pattern. The memory switching layer pattern may include a composite of a titanium layer pattern contacting the phase-changeable memory element and a titanium nitride layer pattern contacting the titanium layer pattern.
摘要翻译：可变相存储器件包括非易失性存储器单元。这些非易失性存储器单元中的每一个可以包括半导体衬底上的相位可变二极管和具有电耦合到相位可变二极管的端子的第一端子的相位可变存储元件。该相变二极管可以包括半导体衬底上的下电极图案，下电极图案上的第一相变图案和第一相位可变图案上的栅极切换层图案。相位可变存储元件包括电耦合到相变二极管的端子的第二相位变化图案和第二相位可变图案上的存储器切换层图案。存储器切换层图案可以包括与相变存储元件接触的钛层图案与接触钛层图案的氮化钛层图案的复合物。

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